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    DUAL GATE N-CHANNEL MOSFET TRANSISTOR Search Results

    DUAL GATE N-CHANNEL MOSFET TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    DUAL GATE N-CHANNEL MOSFET TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    95160

    Abstract: MOSFET 9935 003 SOT363 Dual Gate MOSFET graphs TMF3201J Dual-Gate Mosfet 9935 mosfet 95160 3
    Text: Preliminary Specification TMF3201J Dual N-Channel Dual-Gate MOSFET □ Description SOT363 Unit in mm The TMF3201J is an N-channel enhancement type, dual-insulated gate, field-effect transistor that utilizes MOS construction. It is consists of two equal dual gate MOSFET amplifiers with


    Original     		PDF TMF3201J OT363 TMF3201J OT363 95160 MOSFET 9935 003 SOT363 Dual Gate MOSFET graphs Dual-Gate Mosfet 9935 mosfet 95160 3

    3N200 MOSFET

    Abstract: 3N200
    Text: 3N200 N-Channel; Dual-Gate Tetrode MOSFET 5.63 Transistors MOSFETs and TempF. Page 1 of 1 Enter Your Part # Home Part Number: 3N200 Online Store 3N200 Diodes N-Channel; Dual -Gate Tetrode MOSFET Transistors Integrated Circuits checkout.* Optoelectronics


    Original     		PDF 3N200 3N200 com/3n200 3N200 MOSFET

    3N141

    Abstract: tetrode
    Text: 3N141 N-Channel; Dual-Gate Tetrode MOSFET 5.63 Transistors MOSFETs and TempF. Page 1 of 1 Enter Your Part # Home Part Number: 3N141 Online Store 3N141 Diodes N-Channel; Dual -Gate Tetrode MOSFET Transistors Integrated Circuits checkout.* Optoelectronics


    Original     		PDF 3N141 3N141 com/3n141 tetrode

    transistors mos

    Abstract: No abstract text available
    Text: 3N212 Dual Gate Mosfet VHF Amplifier N-Channel - Depletion 26.98 Transistors MOS. Page 1 of 1 Enter Your Part # Home Part Number: 3N212 Online Store 3N212 Diodes Dual Gate Mosfet VHF Amplifier(N -Channel - Depletion) Transistors Integrated Circuits Optoelectronics


    Original     		PDF 3N212 3N212 com/3n212 transistors mos

    3N211

    Abstract: Depletion
    Text: 3N211 Dual Gate Mosfet VHF Amplifier N-Channel - Depletion 8.59 Transistors MOSF. Page 1 of 1 Enter Your Part # Home Part Number: 3N211 Online Store 3N211 Diodes Dual Gate Mosfet VHF Amplifier(N -Channel - Depletion) Transistors Integrated Circuits Optoelectronics


    Original     		PDF 3N211 3N211 com/3n211 Depletion

    3n159

    Abstract: dual-gate
    Text: 3N159 N-Channel; Dual-Gate Tetrode MOSFET 6.38 Transistors MOSFETs and TempF. Page 1 of 1 Enter Your Part # Home Part Number: 3N159 Online Store 3N159 Diodes N-Channel; Dual-Gate Tetrode MOSFET Transistors Enter code INTER3 at checkout.* Integrated Circuits


    Original     		PDF 3N159 3N159 com/3n159 dual-gate

    Untitled

    Abstract: No abstract text available
    Text: TMF3201J Semiconductor Dual Gate MOSFET □ Description SOT-363 Unit in mm The TMF3201J is an N-channel enhancement type, dual-insulated gate, field-effect transistor that utilizes MOS construction. It consists of two equal dual gate MOSFET amplifiers with shared


    Original     		PDF TMF3201J OT-363 TMF3201J OT-363

    bv42 transistor

    Abstract: bv42 27e5 LM324 FDSS2407 injector driver 33E10 marking n9 8-pin PIN diode Pspice model
    Text: FDSS2407 N-Channel Dual MOSFET 62V, 3.3A, 132mΩ Features General Description „ 62V, 132mΩ, 5V Logic Level Gate Dual MOSFET in SO-8 This dual N-Channel MOSFET provides added functions as compared to a conventional Power MOSFET. These are: 1. A drain to source voltage feedback signal and 2. A gate


    Original     		PDF FDSS2407 FDSS2407 bv42 transistor bv42 27e5 LM324 injector driver 33E10 marking n9 8-pin PIN diode Pspice model

    TC227

    Abstract: No abstract text available
    Text: FDSS2407 N-Channel Dual MOSFET 62V, 3.3A, 132mΩ Features General Description ̈ 62V, 132mΩ, 5V Logic Level Gate Dual MOSFET in SO-8 This dual N-Channel MOSFET provides added functions as compared to a conventional Power MOSFET. These are: 1. A drain to source voltage feedback signal and 2. A gate


    Original     		PDF FDSS2407 FDSS2407 TC227

    MARKING CODE Zi sot363

    Abstract: TMF3201J ZI Marking Code transistor MOSFET 9935
    Text: TMF3201J Semiconductor Dual Gate MOSFET □ Description The TMF3201J is an N-channel enhancement type, dual- SOT-363 insulated gate, field-effect transistor that utilizes MOS Unit in mm construction. It consists of two equal dual gate MOSFET amplifiers with shared source and gate2 leads. The source


    Original     		PDF TMF3201J TMF3201J OT-363 OT-363 KSD-A5S001-000 MARKING CODE Zi sot363 ZI Marking Code transistor MOSFET 9935

    K 2611 MOSFET

    Abstract: mosFET K 2611 m4t made K 2611 MOSFET VOLTAGE RATING BF1215 N-CHANNEL dual gate ultra low noise vhf LOW NOISE AMPLIFIER
    Text: BF1215 Dual N-channel dual gate MOSFET Rev. 01 — 6 May 2010 Product data sheet 1. Product profile 1.1 General description The BF1215 is a combination of two dual gate MOSFET amplifiers with shared source lead, shared gate2 lead and an integrated switch.


    Original     		PDF BF1215 BF1215 OT363 K 2611 MOSFET mosFET K 2611 m4t made K 2611 MOSFET VOLTAGE RATING N-CHANNEL dual gate ultra low noise vhf LOW NOISE AMPLIFIER

    Untitled

    Abstract: No abstract text available
    Text: BF1215 Dual N-channel dual gate MOSFET Rev. 01 — 6 May 2010 Product data sheet 1. Product profile 1.1 General description The BF1215 is a combination of two dual gate MOSFET amplifiers with shared source lead, shared gate2 lead and an integrated switch.


    Original     		PDF BF1215 BF1215 OT363

    IRFZ44 equivalent

    Abstract: H-bridge irlZ44 IRLR034 1155I DIODE 1N4148 .07V ttl to cmos converter 24v rectifier j8 gate drive for mosfet irfz44 IRFZ44 mosfet LTC1155
    Text: LTC1155 Dual High Side Micropower MOSFET Driver U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ The LTC 1155 dual high side gate driver allows using low cost N-channel FETs for high side switching applications. An internal charge pump boosts the gate above the positive rail, fully enhancing an N-channel MOSFET with no


    Original     		PDF LTC1155 LTC1255 LTC1477 LTC1623 LTC1710 4/300mA 1155fa IRFZ44 equivalent H-bridge irlZ44 IRLR034 1155I DIODE 1N4148 .07V ttl to cmos converter 24v rectifier j8 gate drive for mosfet irfz44 IRFZ44 mosfet LTC1155

    Untitled

    Abstract: No abstract text available
    Text: LTC1155 Dual High Side Micropower MOSFET Driver DESCRIPTIO U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ The LTC 1155 dual high side gate driver allows using low cost N-channel FETs for high side switching applications. An internal charge pump boosts the gate above the positive rail, fully enhancing an N-channel MOSFET with no


    Original     		PDF LTC1155 LTC1255 LTC1477 LTC1623 LTC1710 /300mA 1155fa

    br 8764

    Abstract: 13-AMPLIFIER BF1210
    Text: BF1210 Dual N-channel dual gate MOSFET Rev. 01 — 25 October 2006 Product data sheet 1. Product profile 1.1 General description The BF1210 is a combination of two dual gate MOSFET amplifiers with shared source and gate2 leads. The source and substrate are interconnected. Internal bias circuits enable


    Original     		PDF BF1210 BF1210 OT363 br 8764 13-AMPLIFIER

    transistor k72

    Abstract: No abstract text available
    Text: NEW PRODUCT 2N7002DW DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR POWER SEMICONDUCTOR Features • • • • • • • Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage


    Original     		PDF 2N7002DW OT-363 OT-363, MIL-STD-202, 500mA DS30120 transistor k72

    k7k transistor

    Abstract: transistor k7k marking K7K transistor marking code k7k transistor
    Text: DMN601DMK DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT Features • • • • • • • • • • Mechanical Data • • Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed


    Original     		PDF DMN601DMK OT-26 OT-26 J-STD-020C MIL-STD-202, DS30657 k7k transistor transistor k7k marking K7K transistor marking code k7k transistor

    br 8764

    Abstract: marking 822 sot363 6710 mosfet sp 9753 BF1214 sc 6700 N-CHANNEL dual gate ultra low noise vhf AMPLIFIER
    Text: BF1214 Dual N-channel dual gate MOSFET Rev. 01 — 30 October 2007 Product data sheet 1. Product profile 1.1 General description The BF1214 is a combination of two dual gate MOSFET amplifiers with shared source and gate2 leads. The source and substrate are interconnected. Internal bias circuits enable


    Original     		PDF BF1214 BF1214 OT363 br 8764 marking 822 sot363 6710 mosfet sp 9753 sc 6700 N-CHANNEL dual gate ultra low noise vhf AMPLIFIER

    Untitled

    Abstract: No abstract text available
    Text: DMN601DWK DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT Features • • • • • • • • • • Mechanical Data • • Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed


    Original     		PDF DMN601DWK OT-363 J-STD-020C MIL-STD-202, DS30656

    SOT363 D2

    Abstract: DMN5L06DW DMN5L06DW-7
    Text: DMN5L06DW DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT Features • • • • • • • • • Mechanical Data • • Dual N-Channel MOSFET Low On-Resistance Very Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed


    Original     		PDF DMN5L06DW OT-363 J-STD-020C MIL-STD-202, DS30751 SOT363 D2 DMN5L06DW DMN5L06DW-7

    Untitled

    Abstract: No abstract text available
    Text: DMN66D0LDW DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT Features • • • • • • • • • Mechanical Data • • Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed


    Original     		PDF DMN66D0LDW AEC-Q101 OT-363 J-STD-020C MIL-STD-202, DS31232

    Untitled

    Abstract: No abstract text available
    Text: NEW PRODUCT SPICE MODEL: DMN5L06VK DMN5L06VAK DMN5010VAK DMN5L06VK DMN5L06VAK DMN5010VAK DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • • • • • • • • • • Dual N-Channel MOSFET Low On-Resistance Very Low Gate Threshold Voltage, 1.0V max


    Original     		PDF DMN5L06VK DMN5L06VAK DMN5010VAK OT-563 DS30769

    DMN5L06DMK-7

    Abstract: DMN5L06DMK
    Text: SPICE MODEL: DMN5L06DMK DMN5L06DMK NEW PRODUCT DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • • • • • • • • • • • Dual N-Channel MOSFET Low On-Resistance Very Low Gate Threshold Voltage 1.0V max Low Input Capacitance


    Original     		PDF DMN5L06DMK AEC-Q101 OT-26 DS30927 DMN5L06DMK-7 DMN5L06DMK

    Untitled

    Abstract: No abstract text available
    Text: 2N7002DW DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package SOT-363 H A h


    OCR Scan     		PDF 2N7002DW OT-363 OT-363, MIL-STD-202, DS30120