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hb2 dc12v
Abstract: HB2-0 E53-CN03N
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H301-E3-1
hb2 dc12v
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LS74
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Text: '$7$ 6+ 7 $35,/ ìääç 5HYLVLRQ íïí /;3çìí /RZð-LWWHU 0XOWLð5DWH &ORFN $GDSWHU õ&/$'ô *HQHUDO 'HVFULSWLRQ ì HDWXUHV 7KH /;3çìí 0XOWLð5DWH &ORFN $GDSWHU õ&/$'ô RIIHUV SLQðVHOHFWDEOH IUHTXHQF\ FRQYHUVLRQ EHWZHHQ 7ì DQG (ì UDWHV DV ZHOO DV å DGGLWLRQDO UDWHV IURP ìïèéé 0+] WR
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6044ST
Abstract: d2222 dpsol E4343
Text: ! 600 nA, Rail-to-Rail Input/Output Op Amps HDWXUHV 'HVFULSWLRQ 7KH 0&3 IDPLO\ RI RSHUDWLRQDO DPSOLILHUV IURP 0LFURFKLS 7HFKQRORJ\ ,QF RSHUDWH ZLWK D VLQJOH VXSSO\ YROWDJH DV ORZ DV 9 ZKLOH GUDZLQJ OHVV WKDQ
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63B50
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Text: #22.+%#6+10 016' /76+0 6*' 8 $#%- %*#00'. &'5+)0 # *#. &72.': 8 /1&'/ 9+6* << +0641&7%6+10 7KH EDFN FKDQQHO ESV LQ WKH ,78 9 UHFRPPHQGDWLRQ LV VSHFLILHG DV RSWLRQDO 7KH =LORJ == GDWD SXPSV SURYLGH WKH EDFN FKDQQHO DV WKH GHIDXOW FRQGLWLRQ 7KH
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C2099
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Text: Single Hole Fixing Receptacles 8:$# 95*%08:$# BS9522 - F0017 - C2099 6LQJOH#KROH#PRXQWLQJ#ZLWK#SODLQ#VKHOO#IRU# GLUHFW#ZLULQJ#WR#H[SRVHG#VROGHU#EXFNHWV1# +DV#SDQHO#*2*#ULQJ#VHDO1# Shell Size A max 08 0.978 24.84 0.978 24.84 0.978 24.84 0.978 24.84 0.978 24.84
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30DQ
Abstract: AE 706 HGSR
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Abstract: No abstract text available
Text: VKM 60-01P1 HiPerFETTM Power MOSFET ID25 = 75 A VDSS = 100 V Ω RDSon = 25 mΩ H-Bridge Topology in ECO-PAC 2 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family trr < 200 ns L4 L6 A1 K 12 E10 P 18 R 18 NTC Preliminary data sheet L9 K 13 F10 X 15
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60-01P1
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Text: VKM 60-01P1 HiPerFETTM Power MOSFET H-Bridge Topology in ECO-PAC 2 ID25 = 75 A VDSS = 100 V Ω RDSon = 25 mΩ N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family trr < 200 ns L4 L6 K 12 A1 L9 E10 P 18 R 18 NTC K 13 F10 X 15 K10 T 18 V 18 X 18
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60-01P1
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60-01P1
Abstract: eco-pac
Text: VKM 60-01P1 HiPerFETTM Power MOSFET H-Bridge Topology in ECO-PAC 2 ID25 = 75 A VDSS = 100 V Ω RDSon = 25 mΩ N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family trr < 200 ns L4 L6 A1 K 12 L9 E10 P 18 R 18 NTC K 13 F10 X 15 K10 T 18 V 18 X 18
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60-01P1
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mlt 22
Abstract: MCT thyristor k 3918 regulator Dual supply voltage regulator for 30vpp HIP2030 igbt subcircuit MOS Controlled Thyristor AN9408 HIP2030EVAL TLP2601
Text: No. AN9408.2 Intersil Intelligent Power November 1994 The HIP2030 MCT/IGBT Gate Driver Provides Isolated Control Signals To Switch Power Devices Author: J. K. Azotea Introduction The Intersil Fiber-Optic Isolated Gate Driver HFOIGD is designed to operate reliably at high isolation voltages, dv/dt’s,
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AN9408
HIP2030
mlt 22
MCT thyristor
k 3918 regulator
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MOS Controlled Thyristor
HIP2030EVAL
TLP2601
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E3X-CN22
Abstract: E3X-DA44V E3X-DA14V E3X-DA8
Text: 'LJLWDO LEHU2SWLF $PSOLILHU ;'$1 $PSOLILHUV :LWK 'LJLWDO 'LVSOD\ 2IIHU 5HPRWH 7HDFKLQJ DQG (DV\WR5HSHDW 6HWWLQJV • ■ ■ ■ ■ ■ ■ /DUJH HDV\WRUHDG GLJLWDO GLVSOD\ HQDEOHV HDV\ VHWWLQJ DQG UHDOWLPH PRQLWRULQJ 7KUHH ¦)LEHU 1HWZRUN &RPPXQLFDWLRQV 8QLWV§
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4R3TI30Y-080
Abstract: T151 u1490
Text: 4R3TI30Y-080 S ± / ' 9 - je ^ zl- ; p DIODE and TYRISTOR MODULE •¡KfJa : Features • Glass Passivation Chip • f i g E a s y Connection • Insulated Type • di/dt W S * V '^: # I ' Large di/dt • dv/dt l i £u Large dv/dt : Applications • • '< "j f- U —
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Untitled
Abstract: No abstract text available
Text: Data Sheet No. PDh5.022A International I R Rectifier IR2130D 3-PHASE BRIDGE Features •Hermetic ■Floatingchanneldesignedforbootstrap operation Fully operational to +400V Tolerant to negative transient voltage dV/dt immune ■ Gate drive supply range from 10 to 20V
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IR2130D
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16TTS12
Abstract: No abstract text available
Text: International IQR Rectifier 5 Phase Control SCR •’.NNiVïuy.utr VKRM/ Part Humber •tsm VDRM ■RMS V (A) *T(AV) @ Ï£ (A) (■) (A) (°q (b) (A) VGT (V) 1GT % (A) Fax Case on Demand Outline (A) (V/Ais) (°C/W) Noteî Number Key @*TM dv/dt RQIC(DC)
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25TTS12S
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til 31a
Abstract: h196 H199 IRHM7130 IRHM8130 EO 28b H202
Text: Data Sheet No. PD-9.707A INTERNATIONAL RECTIFIER REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS IRHM7130 o r IRHM8130 N-CHANNEL MEGA RAD HARD 100 Volt, 0.18Q, MEGA RAD HARD HEXFET Product Summary International Rectifier’s MEGA RAD HARD Technology HEXFETs
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IRHM7130
IRHM8130
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h196
H199
IRHM7130
IRHM8130
EO 28b
H202
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2N7236 JANTX
Abstract: 2N7236 mosfet K 1377
Text: Data Sheet No. PD-9.495D INTERNATIONAL RECTIFIER IO R REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR IRFM914Q 2N 7236 JANS2N7236 JANTX2N7236 JANTXV2N7236 [REF: M IL-S-1S500/5S5] -100 Volt, 0.20 Ohm HEXFET Product Summary The HEXFET® technology is the key to International
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IRFM914Q
JANS2N7236
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2N7236
mosfet K 1377
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