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    R5F10PBDYNA#W5 Renesas Electronics Corporation Microcontrollers with Low Consumption Current for Automotive Applications Visit Renesas Electronics Corporation
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    R5F10ABDYNA#G5 Renesas Electronics Corporation Microcontrollers with Low Consumption Current for Automotive Applications Visit Renesas Electronics Corporation
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    TDK Corporation CC45SL3JD050DYNNA

    Ceramic Disc Capacitors D: 7.5mm 6kV 5pF SL 0.50pF LS:7.5mm
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    Mouser Electronics CC45SL3JD050DYNNA 5,370
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    ifm efector inc KT5002 (ALTERNATE: KTRBFNUKBPKG/0.3M/DYN/AM)

    Touch sensor, dynamic evaluation, 3-wire DC, PNP, N.O, 0.3M M8 pigtail | ifm efector KT5002
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    RS KT5002 (ALTERNATE: KTRBFNUKBPKG/0.3M/DYN/AM) Bulk 3 1
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    ifm efector inc KT5001 (ALTERNATE: KTRBFNUKBPKG/2M/DYN/AM)

    Touch sensor, dynamic evaluation, 3-wire DC, PNP, N.O, 2M PUR cable | ifm efector KT5001
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    RS KT5001 (ALTERNATE: KTRBFNUKBPKG/2M/DYN/AM) Bulk 1 1
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    ifm efector inc KT5009 (ALTERNATE: KTRBFNUKBPKG/2M/DYN/AM)

    Touch sensor, dynamic evaluation, 3-wire DC, PNP, N.O, 2M PUR cable | ifm efector KT5009
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    RS KT5009 (ALTERNATE: KTRBFNUKBPKG/2M/DYN/AM) Bulk 3 Weeks 1
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    TE Connectivity 1-178128-2

    Headers & Wire Housings HSG REC 1X02C F/H
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    DYNA Datasheets (277)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1410 Dynamic Measurements SAMPLE AND HOLD AMPLIFIERS Scan PDF
    1410 Dynamic Measurements Very High Speed Sample and Hold Amplifiers Scan PDF
    1411 Dynamic Measurements Very High Speed Sample and Hold Amplifiers Scan PDF
    1411 Dynamic Measurements SAMPLE AND HOLD AMPLIFIERS Scan PDF
    1810 Dynamic Measurements HIGH VOLTAGE HIGH SPEED FET OPERATIONAL AMPLIFIERS Scan PDF
    1810 Dynamic Measurements High Voltage High Speed FET Operational Amplifiers Scan PDF
    1811 Dynamic Measurements HIGH VOLTAGE HIGH SPEED FET OPERATIONAL AMPLIFIERS Scan PDF
    1811 Dynamic Measurements High Voltage High Speed FET Operational Amplifiers Scan PDF
    2470 Dynamic Measurements 14-Bit D/A Converters Scan PDF
    2470 Dynamic Measurements DIGITAL TO ANALOG CONVERTERS Scan PDF
    2471 Dynamic Measurements 14-Bit D/A Converters Scan PDF
    2471 Dynamic Measurements DIGITAL TO ANALOG CONVERTERS Scan PDF
    2800 Dynamic Measurements ANALOG TO DIGITAL CONVERTERS Scan PDF
    2801 Dynamic Measurements ANALOG TO DIGITAL CONVERTERS Scan PDF
    2802 Dynamic Measurements ANALOG TO DIGITAL CONVERTERS Scan PDF
    2803 Dynamic Measurements ANALOG TO DIGITAL CONVERTERS Scan PDF
    2804 Dynamic Measurements ANALOG TO DIGITAL CONVERTERS Scan PDF
    2805 Dynamic Measurements ANALOG TO DIGITAL CONVERTERS Scan PDF
    2806 Dynamic Measurements ANALOG TO DIGITAL CONVERTERS Scan PDF
    2807 Dynamic Measurements ANALOG TO DIGITAL CONVERTERS Scan PDF
    ...

    DYNA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    UM5583

    Abstract: UM55 SPKP rs 355 integrated circuits 5583H
    Text: UMC UM5583 3 Sec Recording / Playback 1C Features • "BEEP" sound indicates to start recording and memory full for manual playback ■ Built-In AGC Automatic Gain Control to enlarge input dynamic range ■ Built-in low pass filter ■ Built-in microphone amplifier


    OCR Scan     		PDF UM5583 UM5583 UM5583H UM55 SPKP rs 355 integrated circuits 5583H

    TMS4116

    Abstract: TMS4132
    Text: MOS LSI TMS 4132 JDL 32,768-BIT DYNAMIC RANDOM-ACCESS MEMORY NOVEMBER 1979 32,768 «AX SUPPLY 1 X 1 Organization 10% Tolerance on All Supplies • All Inputs Including Clocks TTL-Compatible


    OCR Scan     		PDF 768-BIT 18-PIN 200ACCESS 4132JD TMS4116 TMS4132

    A9RV

    Abstract: 5s a315 A327
    Text: TOSHIBA TC514900AJLL-70/80 524,288 WORD X 9 BIT DYNAMIC RAM DESCRIPTION The TC514900AJLL is the new generation dynamic RAM organized 524,288 word by 9 bit. The TC514900AJLL utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit


    OCR Scan     		PDF TC514900AJLL-70/80 TC514900AJLL TC514900AJLI/70/80 TC514900AJLL70/80 A9RV 5s a315 A327

    tms4256

    Abstract: TMS4266
    Text: INSTR TM4256EL9, TM4256GU9 262,144 BY 9-BIT DYNAMIC BAM MODULES 7“-ifc-23-/7 25E D SEPTEMBER 1986 — REVISED M ARCH 1968 A SIC /MEMORY 262,144 x 9 Organization TM4266EL9 . . . L SMQLE-IN-UNE PACKAGE (TOP VIEWl_ Slngla 5-V Supply (10% Tolerance)


    OCR Scan     		PDF U17ES 077GC TM4256EL9, TM4256GU9 -ifc-23-/7 TM4266EL9 30-Pln TM4256EL9) TM4266GU9) tms4256 TMS4266

    4A04I

    Abstract: tc514100a
    Text: TC51441OAP/AJ/ASJ/AZ—70, TC51441OAP/AJ/ASJ/AZ-80 TC51441OAP/AJ/ASJ/AZ-10 PRELIMINARY 1,048,576 W ORD x 4 BIT DYNAMIC RAM DESCRIPTION The TC51441 OAP/AJ/ASJ/AZ is the new generation dynamic RAM organized 1,048,576 words by 4 bits. The TC514410AP/AJ/ASJ/AZ utilizes TOSHIBA’S CMOS Silicon gate process technology as well as


    OCR Scan     		PDF TC51441OAP/AJ/ASJ/AZ-- TC51441OAP/AJ/ASJ/AZ-80 TC51441OAP/AJ/ASJ/AZ-10 TC51441 TC514410AP/AJ/ASJ/AZ 350mil) TC514100AP/AJ/ASJ/AZ. TC5141OOAP/AJ/ASJ/AZ-60 4A04I tc514100a

    cq837

    Abstract: No abstract text available
    Text: 4J« *- »t TOSHIBA HYBRID D IG ITA L INTcGRATED CIRCUIT INTEGRATED CIRCUIT TO SHIBA THM 364080AS THM 364080ASG TECHNICAL DATA - 60. 70. 80, 10 - 60, 70, 80. 10 TENTATIVE DATA 4*194,304 W O R D S X 36 BIT D YN AM IC RA M MODULE DESCRIPTION The THM364080AS/ASG is a 4,194,304 words by 36 bits dynamic RA M module which assembled 36


    OCR Scan     		PDF 364080AS 364080ASG THM364080AS/ASG TC514100ASJ 364080ASG A0-A10 THM36408QAS THM364080AS THM364080ASG cq837

    BE423

    Abstract: No abstract text available
    Text: TOSHIBA TC5118325BJ/BFT-70 PRELIMINARY 524,288 WORD X 32 BIT EDO DYNAMIC RAM Description The TC5118325BJ/BFT is the Hyper Page Mode (EDO) dynamic RAM organized 524,288 words by 32 bits. The TC5118325BJ/BFT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to pro­


    OCR Scan     		PDF TC5118325BJ/BFT-70 TC5118325BJ/BFT TC5118325BJ/ 400mil) I/024 I/025 I/032 BE423

    TC514170BJ-80

    Abstract: tc514170 TC514170BJ80
    Text: TOSHIBA TC514170BJ-70/80 262,144 WORD X 16 BIT DYNAMIC RAM DESCRIPTION The TC514170BJ is the new generation dynam ic RAM organized 262,144 word by 16 bit. The TC514170BJ utilizes T oshiba’s CM OS silicon gate process technology as well as advanced circuit techniques


    OCR Scan     		PDF TC514170BJ-70/80 TC514170BJ TC514170BJ-80 tc514170 TC514170BJ80

    TM4SN64EPN10

    Abstract: TM2SN64EPN-10 TM48N64EPN TM4SN64EPN-10 TMS626812
    Text: TM2SN64EPN 2097152 BY 64-BIT TM4SN64EPN 4194304 BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULES _ SYNCHRONOUS CLOCK CYCLE TIME *CK3 , {CL = 3 t ACCESS TIME CLOCK TO OUTPUT >CK2 CL = 2) *CK3 (CL = 3) *CK2 (CL = 2) • • • • • • • •


    OCR Scan     		PDF TM2SN64EPN 64-BIT TM4SN64EPN SMMS696 TM2SN64EPN. TM4SN64EPN 66-MHz 168-Pin TM4SN64EPN10 TM2SN64EPN-10 TM48N64EPN TM4SN64EPN-10 TMS626812

    Untitled

    Abstract: No abstract text available
    Text: TM4164EC4 65,536 BY 4-BIT DYNAMIC RAM MODULE NOVEMBER 1983 - REVISED NOVEMBER 1985 SINGLE-IN-UNE PACKAGE 6 5 ,5 3 6 X 4 Organization TOP VIEW Single 5-V Supply (10% Tolerance) 22-Pin Single-in-Line Package (SIP) Utilizes Four 64K Dynamic RAMs in Plastic


    OCR Scan     		PDF TM4164EC4 22-Pin

    wc 2c

    Abstract: No abstract text available
    Text: SMJ4416 16.384-WORD BY 4-BIT DYNAMIC RAM AUGUST 1980 JO PACKAGE 1 6 ,3 8 4 x 4 O rg anizatio n TO P V IE W S ingle 5 -V S u p p ly ( ± 1 0 % T olerance) g P erfo rm a nce Ranges ACCESS T IM E • DQ1 C C2 DQ 2C Ul8 Dvss 17 3 D Q 4 3 16 4 15 "2C A S "2D Q 3


    OCR Scan     		PDF SMJ4416 384-WORD J4416 wc 2c

    TC5117445CSJ

    Abstract: No abstract text available
    Text: TO SHIBA_ TC5117445CSJ-40,-50,-60 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORD BY 4-BIT EDO HYPER PAGE DYNAMIC RAM DESCRIPTION The TC5117445CSJ is an EDO (Hyper Page) dynamic RAM organized as 4,194,304 words by 4 bits. The


    OCR Scan     		PDF TC5117445CSJ-40 304-WORD TC5117445CSJ 28-pin 17445CSJ-40 TC5117445CSJ SOJ28

    44c256

    Abstract: 3034C
    Text: SMJ44C256 262144 BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORY _ SGMS034C - MAY 1989 - B E V ILO JUNE 1965 Organization. . . 262144 Words x 4 Bits Single 5-V Supply 10% Tolerance Processed to MIL-STD-833, Class B Performance Ranges: 3-State Unlatched Output


    OCR Scan     		PDF SMJ44C256 SGMS034C MIL-STD-833, SMJ44C256-80 SMJ44C256-10 SMJ44C256-12 SMJ44C256-15 20-Pin 300-Mil 20-Lead 44c256 3034C

    TC51V18160

    Abstract: No abstract text available
    Text: INTEGRATED TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT CIRCUIT TC51V18160 C S / CFTS - 60 TOSHIBA TECHNICAL DATA SILICON GATE CMOS TENTATIVE DATA 1,048,576 WORD x16 BIT FAST PAGE DYNAMIC RAM DESCRIPTION The TC51V1S160CJS-CFTS is the fast page dynamic R A M organized 1,048,576 words by 16 bits.


    OCR Scan     		PDF TC51V18160 TC51V1S160CJS-CFTS TC51V18160CJS TC51V18160CJS/CFTS 73MAX TSOP50-P-400) 875TYP 35MAX TC51V18160CJS/CFT>

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA THMY644071EG-10 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 4,194,304-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY644071EG is a 4,194,304-word by 64-bit synchronous dynamic RAM module consisting of four TC59S6416FT DRAMs and an unbuffer on a printed circuit board.


    OCR Scan     		PDF THMY644071EG-10 304-WORD 64-BIT THMY644071EG TC59S6416FT THMY644071

    TC528257

    Abstract: n724
    Text: TOSHIBA SILICON GATE CMOS TC528257 t a r g e t s p e c 262,144WORDS X 8BITS MULTIPORT DRAM DESCRIPTION The TC528257 is a 2M bit CM OS multiport m em ory equipped with a 262,144-w ords by 8 -bits dynam ic random access m em ory RAM port and a 512-words by 8 -bits static serial access m emory (SA M ) port. The


    OCR Scan     		PDF TC528257 144WORDS TC528257 144-w 512-words TC528257J/SZ/nVTR1017240 TC528257J/SZ/FT/TR-70 TC528257J/SZ/FT/TR-80 n724

    Untitled

    Abstract: No abstract text available
    Text: h- .5 0 -H .2 5 0 r 1 .075 — .19 7 .0 5 5 I F □ □ □ .031 — r Î •lo .38 I HIGH DYNAMIC RANGE DOUBLE BALANCED MIXER h-— -19 MAX —- - T .3 5 1 TRAK MICROWAVE RF MIXER $ M X R /3 C F -0 2 H D SPECIFICATIONS: IF OPERATING FREQUENCY


    OCR Scan     		PDF MXR/3CF-02HD

    Untitled

    Abstract: No abstract text available
    Text: TM4EP72BPB, TM4EP72BJB, 4194304 BY 72-BIT TM4EP72CPB, TM4EP72CJB 4194304 BY 72-BIT EXTENDED-DATA-OUT BUFFERED DYNAMIC RAM MODULES _ _ • • • • Long Refresh Periods: - TM4EP72CxB: 64 ms 4096 Cycles


    OCR Scan     		PDF TM4EP72BPB, TM4EP72BJB, 72-BIT TM4EP72CPB, TM4EP72CJB SMMS886-AUGUST TM4EP72BxB 32M-byte, 168-pin,

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY 4,194,304 WORD x 1 BIT DYNAMIC RAM DESCRIPTION The TC514101AP/AJ/ASJ/AZ is the new generation dynamic RAM organized 4,194,304 words by 1 bit. The TC514101AP/AJ/ASJ/AZ utilizes TOSHIBA’S CMOS Silicon gate process technology as well as advanced circuit techniques to provide wide operating m argins, both internally and to the system user.


    OCR Scan     		PDF TC514101AP/AJ/ASJ/AZ 300/350mil) TC514101AP/ASJ/AZ. TC514101AP/AJ/ASJ/A2-70, TC514101AP/AJ/ASJ/AZ-80 TC514101AP/AJ/ASJ/AZ-10

    Untitled

    Abstract: No abstract text available
    Text: h- .5 0 - - .2 5 0 |.0 7 5 — .19 r t 1 t 1 RF□ 0 5 5 -1 r .031 — c ri T -lo .38 T - .35 1 I IF MATERIAL El STANDARD □ SPECIAL ° BASE o COVER ° MARKING » FINISH F R -4 VECTRA LASER SOLDER TIN HIGH DYNAMIC RANGE DOUBLE BALANCED MIXER MAX


    OCR Scan     		PDF MXR/6EF-02HD

    EN 1452-3

    Abstract: J416
    Text: SMJ4164 65.536-BIT DYNAMIC RANDOM-ACCESS MEMORY JU LY 1985 - J D PA C K A G E 6 5 ,5 3 6 x 1 Organization TO P V IEW Single 5-V Supply (± 1 0% Tolerance) w Ç AOQ A2C A1 C VddC 8 Long Refresh Period . . . 4 ms FG PA C K A G E Low Refresh Overhead Time . .


    OCR Scan     		PDF SMJ4164 536-BIT EN 1452-3 J416

    TC514265DJ

    Abstract: TC514265D TC514265 SOJ40-P-400
    Text: TOSHIBA TC514265DJ/DFT-50/60/70 PRELIMINARY 262,144 WORD X 16 BIT EDO HYPER PAGE DYNAMIC RAM Description TheTC514265DJ/DFT is an EDO (hyper page) dynamic RAM organized as 262,144 words by 16 bits. TheTC514265DJ/ DFT utilizes Toshiba's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide oper­


    OCR Scan     		PDF TC514265DJ/DFT-50/60/70 TheTC514265DJ/DFT TheTC514265DJ/ TC514265DJ/DFT TC514265D J/DFT-50/60/70 DR04041293 TC514265DJ TC514265 SOJ40-P-400

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC514800AJ/AZ/AFT-70/80 524,288 WORD X 8 BIT DYNAMIC RAM DESCRIPTION The TC514800AJ/AZ/AFT is the new generation dynam ic RAM organized 524,288 word by 8 bit. The TC514800A J/AZ/AFT utilizes T oshiba’s CM OS silicon gate process technology as w ell as advanced circuit


    OCR Scan     		PDF TC514800AJ/AZ/AFT-70/80 TC514800AJ/AZ/AFT TC514800A

    TC5117405

    Abstract: No abstract text available
    Text: TOSHIBA THM328025BS/BS&60/70 PRELIMINARY 8,388,608 WORDS X 32 BIT EDO DYNAMIC RAM MODULE Description The THM328025BS/BSG is a 8,388,608 words by 32 bits Hyper Page Mode (EDO) dynamic RAM module which assembled 16 pcs of TC5117405BSJ on the printed circuit board. This module is optimized for application to the systems which are


    OCR Scan     		PDF THM328025BS/BS THM328025BS/BSG TC5117405BSJ 704mW THMxxxxxx-60) 074mW THMxxxxxx-70) DM32020695 M328025BS/BSG THM328025BS/BSG-6Q/70 TC5117405