E15343 Search Results

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Festo QSKL-1/4-8 (ALTERNATE: 153433) Fitting, PBT, air, 360 deg rotate, L, R1/4 male thrd, 8mm conn \| Festo QSKL-1/4-8
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	QSKL-1/4-8 (ALTERNATE: 153433)	Bulk			1	1 $8.07 10 $8.07 100 $8.07 1000 $8.07 10000 $8.07	Get Quote
Festo QSKL-1/8-8 (ALTERNATE: 153432) Fitting, PBT, air, 360 deg rotate, L, R1/8 male thrd, 8mm conn \| Festo QSKL-1/8-8
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	QSKL-1/8-8 (ALTERNATE: 153432)	Bulk			1	1 $7.86 10 $7.86 100 $7.86 1000 $7.86 10000 $7.86	Get Quote
Festo QSKL-3/8-8 (ALTERNATE: 153434) Fitting, PBT, air, 360 deg rotate, L, R3/8 male thrd, 8mm conn \| Festo QSKL-3/8-8
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	QSKL-3/8-8 (ALTERNATE: 153434)	Bulk			1	1 $9.31 10 $9.31 100 $9.31 1000 $9.31 10000 $9.31	Get Quote
Festo QSKL-1/2-12 (ALTERNATE: 153438) Fitting, PBT, air, 360 deg rotate, L, R1/2 male thrd, 12mm conn \| Festo QSKL-1/2-12
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	QSKL-1/2-12 (ALTERNATE: 153438)	Bulk			1	1 $14.8 10 $14.8 100 $14.8 1000 $14.8 10000 $14.8	Get Quote
Festo QSKL-1/4-10 (ALTERNATE: 153435) Fitting, PBT, air, 360 deg rotate, L, R1/4 male thrd, 10mm conn \| Festo QSKL-1/4-10
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	QSKL-1/4-10 (ALTERNATE: 153435)	Bulk			1	1 $10.45 10 $10.45 100 $10.45 1000 $10.45 10000 $10.45	Get Quote

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E15343 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
35N120D1 Abstract: D-68623 IXER 35N120D1 Text: IXER 35N120D1 NPT3 IGBT with Diode IC25 = 50 A = 1200 V VCES VCE sat typ. = 2.2 V in ISOPLUS 247TM ISOPLUS 247TM E153432 C G G C E Isolated Backside* E G = Gate C = Collector E = Emitter *Patent pending Features IGBT Symbol Conditions VCES TVJ = 25°C to 150°C	Original	35N120D1 247TM E153432 35N120D1 D-68623 IXER 35N120D1	PDF
TO247AD Abstract: TO247AD package 40n60c CoolMOS Power Transistor ISOPLUS247 Text: IXKR 40N60C CoolMOS Power MOSFET in ISOPLUS247TM Package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base VDSS ID25 RDS on 600 V 38 A Ω 70 mΩ D G Preliminary data S ISOPLUS 247TM E153432 MOSFET Conditions	Original	40N60C ISOPLUS247TM 247TM E153432 TO247AD TO247AD package 40n60c CoolMOS Power Transistor ISOPLUS247	PDF
DSEC29 Abstract: DSEC 29 DSEC Text: HiPerFREDTM Epitaxial Diode DSEA 59-06BC DSEC 59-06BC = 2x30 A = 600 V = 35 ns IFAV VRRM trr ISOPLUS220TM Electrically Isolated Back Surface DSEA Preliminary Data Sheet VRSM VRRM V V 600 600 ISOPLUS220TM E153432 Type 1 DSEC 2 3 2 3 DSEA 59-06BC DSEC 59-06BC	Original	59-06BC ISOPLUS220TM E153432 29-06B DS98817A DSEC29 DSEC 29 DSEC	PDF
IXGN400N60B3 Abstract: No abstract text available Text: Preliminary Technical Information IXGN400N60B3 GenX3TM 600V IGBT VCES = 600V IC25 = 430A VCE sat ≤ 1.40V Medium-Speed Low-Vsat PT IGBT for 5-40 kHz Switching E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600	Original	IXGN400N60B3 OT-227B, E153432 IC110 400N60B3 IXGN400N60B3	PDF
Mosfet 75V 120A Abstract: Power Mosfet 75V 120A IXFN240N15T2 Text: Advance Technical Information IXFN240N15T2 GigaMOSTM TrenchT2 HiperFETTM Power MOSFET VDSS ID25 = = 150V 240A Ω 5.2mΩ 140ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 E153432 S G Symbol Test Conditions	Original	IXFN240N15T2 140ns OT-227 E153432 240N15T2 Mosfet 75V 120A Power Mosfet 75V 120A IXFN240N15T2	PDF
IXFN520N075T2 Abstract: No abstract text available Text: Preliminary Technical Information IXFN520N075T2 TrenchT2TM GigaMOSTM HiperFETTM Power MOSFET VDSS ID25 75V 480A Ω 1.9mΩ RDS on ≤ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 E153432 S Symbol Test Conditions VDSS TJ = 25°C to 175°C	Original	IXFN520N075T2 OT-227 E153432 520N075T2 IXFN520N075T2	PDF
IXGN320N60A3 Abstract: No abstract text available Text: IXGN320N60A3 GenX3TM 600V IGBT VCES = 600V IC25 = 320A VCE sat ≤ 1.25V Ultra-Low-Vsat PT IGBT for up to 5kHz Switching E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ	Original	IXGN320N60A3 OT-227B, E153432 IC110 320N60A3 3-08-A IXGN320N60A3	PDF
IXFN320N17T2 Abstract: ixfn320n 320N17T2 Text: Advance Technical Information IXFN320N17T2 GigaMOSTM TrenchT2 HiperFETTM Power MOSFET VDSS ID25 = = 170V 260A Ω 5.2mΩ 150ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 E153432 S G Symbol Test Conditions	Original	IXFN320N17T2 150ns OT-227 E153432 320N17T2 IXFN320N17T2 ixfn320n	PDF
ixfn420n10t Abstract: 420N10T 420N1 MOSFET 60V 210A F420 IXFN SOT227 DS100199 123B16 Text: Advance Technical Information IXFN420N10T GigaMOSTM Trench HiperFETTM Power MOSFET VDSS ID25 = = 100V 420A Ω 2.3mΩ 140ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 E153432 S G Symbol Test Conditions	Original	IXFN420N10T 140ns OT-227 E153432 420N10T ixfn420n10t 420N10T 420N1 MOSFET 60V 210A F420 IXFN SOT227 DS100199 123B16	PDF
IXGN200N60B3 Abstract: 9V DC INPUT and gate ic 200N60B3 IGBT 100V 100A igbt 100a 150v SOT227B 123B16 Text: IXGN200N60B3 GenX3TM 600V IGBT VCES = 600V IC110 = 200A VCE sat ≤ 1.50V Medium-Speed Low-Vsat PT IGBT for 5-40kHz Switching SOT-227B, miniBLOC E153432 Ec Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ	Original	IXGN200N60B3 IC110 5-40kHz OT-227B, E153432 200N60B3 8-08-A IXGN200N60B3 9V DC INPUT and gate ic IGBT 100V 100A igbt 100a 150v SOT227B 123B16	PDF
IXGJ50N60C4D1 Abstract: G50N60 Text: Preliminary Technical Information High-Gain IGBT w/ Diode IXGJ50N60C4D1 VCES = 600V IC110 = 21A VCE sat ≤ 2.50V (Electrically Isolated Tab) High-Speed PT Trench IGBT ISO TO-247TM E153432 Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C	Original	IXGJ50N60C4D1 IC110 O-247TM E153432 IC110 IF110 50N60C4 0-06-11-A IXGJ50N60C4D1 G50N60	PDF
IXTN17N120L Abstract: No abstract text available Text: Advance Technical Information Linear Power MOSFET With Extended FBSOA IXTN17N120L VDSS ID25 D N-Channel Enhancement Mode Avalanche Rated = 1200V = 17A Ω ≤ 990mΩ RDS on G S S miniBLOC, SOT-227 B (IXTN) E153432 Symbol Test Conditions VDSS TJ = 25°C to 150°C	Original	IXTN17N120L OT-227 E153432 17N120L IXTN17N120L	PDF
Untitled Abstract: No abstract text available Text: Preliminary Technical Information GenX3TM 600V IGBT IXGN120N60A3 IXGN120N60A3D1 VCES = 600V IC110 = 120A VCE sat ≤ 1.35V Ultra-low Vsat PT IGBTs for up to 5kHz switching D1 E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C	Original	IXGN120N60A3 IXGN120N60A3D1 IC110 OT-227B, E153432 IF110 2x61-06A	PDF
94N50 Abstract: No abstract text available Text: Advance Technical Information IXFN94N50P2 PolarP2TM HiPerFETTM Power MOSFET VDSS ID25 = = 500V 68A  55m 250ns RDS on   trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC E153432 S Symbol Test Conditions Maximum Ratings	Original	IXFN94N50P2 250ns E153432 100ms 94N50P2 9-13-A 94N50	PDF

Untitled Abstract: No abstract text available Text: XPTTM 650V GenX4TM w/ Sonic Diode IXXN110N65B4H1 Extreme Light Punch Through IGBT for 10-30kHz Switching VCES = IC110 = VCE sat  tfi(typ) = 650V 110A 2.1V 85ns E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C	Original	IXXN110N65B4H1 10-30kHz IC110 OT-227B, E153432 IF110 110N65B4H1 02-04-13-B	PDF
Untitled Abstract: No abstract text available Text: Advance Technical Information IXFN520N075T2 TrenchT2TM GigaMOSTM HiperFETTM Power MOSFET VDSS ID25 75V 455A Ω 1.65mΩ RDS on ≤ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 E153432 S Symbol Test Conditions VDSS TJ = 25°C to 175°C	Original	IXFN520N075T2 OT-227 E153432 520N075T2	PDF
80N60 Abstract: No abstract text available Text: Advance Technical Information IXFR80N60P3 Polar3TM HiPerFETTM Power MOSFET VDSS ID25 RDS on trr N-Channel Enhancement Mode Fast Intrinsic Rectifier = = ≤ ≤ 600V 48A Ω 76mΩ 250ns ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	IXFR80N60P3 250ns ISOPLUS247 E153432 80N60P3 80N60	PDF
IXFN44N80Q3 Abstract: No abstract text available Text: Preliminary Technical Information IXFN44N80Q3 HiperFETTM Power MOSFET Q3-Class VDSS ID25 RDS on trr N-Channel Enhancement Mode Fast Intrinsic Rectifier Avalanche Rated = = ≤ ≤ 800V 37A Ω 190mΩ 300ns miniBLOC E153432 S Symbol Test Conditions Maximum Ratings	Original	IXFN44N80Q3 300ns E153432 44N80Q3 IXFN44N80Q3	PDF
IXXN100N60B3H1 Abstract: No abstract text available Text: Advance Technical Information IXXN100N60B3H1 XPTTM 600V GenX3TM w/ Diode VCES IC90 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 10-30kHz Switching = = ≤ = 600V 100A 1.80V 150ns E SOT-227B, miniBLOC E153432 Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C	Original	10-30kHz IXXN100N60B3H1 150ns IF110 100N60B3 12-01-11-B IXXN100N60B3H1	PDF
Untitled Abstract: No abstract text available Text: Advance Technical Information IXTJ6N150 High Voltage Power MOSFET VDSS ID25 = = 1500V 3A 3.85Ω RDS on ≤ (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode ISO TO-247TM E153432 Symbol Test Conditions Maximum Ratings	Original	IXTJ6N150 O-247TM E153432 100ms 6N150	PDF
IXFN62N80Q3 Abstract: sot 123 Text: Advance Technical Information IXFN62N80Q3 HiperFETTM Power MOSFET Q3-Class VDSS ID25 RDS on trr = = ≤ ≤ 800V 49A Ω 140mΩ 300ns N-Channel Enhancement Mode Fast Intrinsic Rectifier miniBLOC E153432 S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	IXFN62N80Q3 300ns E153432 62N80Q3 IXFN62N80Q3 sot 123	PDF
Untitled Abstract: No abstract text available Text: HiPerFETTM Power MOSFET IXFN 70N60Q2 VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr = 600 V = 70 A ≤ 80 mΩ Ω ≤ 250 ns miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions Maximum Ratings	Original	70N60Q2 OT-227 E153432	PDF
Untitled Abstract: No abstract text available Text: Advance Technical Information IXFN44N80Q3 HiperFETTM Power MOSFET Q3-Class VDSS ID25 RDS on trr = = ≤ ≤ 800V 37A Ω 190mΩ 300ns N-Channel Enhancement Mode Fast Intrinsic Rectifier miniBLOC E153432 S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	IXFN44N80Q3 300ns E153432 44N80Q3	PDF
IXTR68P20T Abstract: DS100375 DS-100-375 Text: Advance Technical Information IXTR68P20T TrenchPTM Power MOSFET VDSS ID25 RDS on = = ≤ - 200V - 44A Ω 64mΩ P-Channel Enhancement Mode Avalanche Rated ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	IXTR68P20T ISOPLUS247 E153432 68P20T IXTR68P20T DS100375 DS-100-375	PDF

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E15343 Search Results

E15343 Price and Stock

Festo QSKL-1/4-8 (ALTERNATE: 153433)

Festo QSKL-1/8-8 (ALTERNATE: 153432)

Festo QSKL-3/8-8 (ALTERNATE: 153434)

Festo QSKL-1/2-12 (ALTERNATE: 153438)

Festo QSKL-1/4-10 (ALTERNATE: 153435)

E15343 Datasheets Context Search

35N120D1

TO247AD

DSEC29

IXGN400N60B3

Mosfet 75V 120A

IXFN520N075T2

IXGN320N60A3

IXFN320N17T2

ixfn420n10t

IXGN200N60B3

IXGJ50N60C4D1

IXTN17N120L

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94N50

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80N60

IXFN44N80Q3

IXXN100N60B3H1

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IXFN62N80Q3

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IXTR68P20T