Untitled
Abstract: No abstract text available
Text: SANKEN ELECTRIC CO., LTD. SJPZ-E33 1. Scope The present specifications shall apply to an SJPZ-E33. 2. Outline Type Silicon Diode Structure Resin Molded Applications Over Voltage Absorption 3. Flammability UL94V-0 Equivalent 060508 1／4 SANKEN ELECTRIC CO., LTD.
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SJPZ-E33.
SJPZ-E33
UL94V-0
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5se2
Abstract: vde 0636/23 358 ez 802 SIEMENS 5SB1 51 DZ SIEMENS 5SB1 61 IEC 60269 SIBA siemens 5SD4 vde 0636/23 gr siemens fuse disconnectors SIBA 50 A Ultra Rapid 50 201 06
Text: D & D0 L O W V O L T A G E F U S E S Y S T E M NH FUSE SYSTEM LOW VOLTAGE FUSE LINKS CIRCUIT PROTECTION SOLUTIONS Bussmann are one of the world’s leading suppliers of fuses and fusible protection systems. Provider of the world’s first truly NH FUSE SYSTEM
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S6025
Abstract: S51212 top marking S1 S101 S102 S111 S112 S201 S202 S501
Text: C&K S Series Slide Switches Features/Benefits S S S S 6 to 15 AMPS Models Available Enclosed housing PC and Snap-in panel mounting Reversing option Typical Applications S S S Portable tools Small appliances Floor care products Build-A-Switch Our easy Build-A-Switch concept allows you to mix and match options to create the switch you need. Below is a complete
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S511
Abstract: SPDT Slide Switch SS 6 S712 S101 S102 S111 S112 S201 S202 S501
Text: S Series Slide Switches Features/Benefits S S S S 6 to 15 AMPS Models Available Enclosed housing PC and Snap-in panel mounting Reversing option Typical Applications S S S Portable tools Small appliances Floor care products Build-A-Switch Our easy Build-A-Switch concept allows you to mix and match options to create the switch you need. Below is a complete
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E43 marking
Abstract: No abstract text available
Text: INCH-POUND MIL-M-38510/131A 21 October 2003 SUPERSEDING MIL-M-38510/131 15 July 1982 MILITARY SPECIFICATION MICROCIRCUITS, LINEAR, LOW NOISE OPERATIONAL AMPLIFIERS, MONOLITHIC SILICON This specification is approved for use by all Departments and Agencies of the Department of Defense.
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MIL-M-38510/131A
MIL-M-38510/131
MIL-PRF-38535.
MIL-M38510
MIL-M-38510
E43 marking
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD44164084, 44164184, 44164364 18M-BIT DDRII SRAM 4-WORD BURST OPERATION Description The µPD44164084 is a 2,097,152-word by 8-bit, the µPD44164184 is a 1,048,576-word by 18-bit and the µPD44164364 is a 524,288-word by 36-bit synchronous double data rate static RAM fabricated with advanced CMOS technology using
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PD44164084,
18M-BIT
PD44164084
152-word
PD44164184
576-word
18-bit
PD44164364
288-word
36-bit
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transistor marking E39
Abstract: E43 marking 425V03 transistor MARKING K4 qml38535
Text: INCH-POUND MIL-M-38510/117C 11 August 2005 SUPERSEDING MIL-M-38510/117B 10 February 2004 MILITARY SPECIFICATION MICROCIRCUITS, LINEAR, ADJUSTABLE, POSITIVE, VOLTAGE REGULATORS, MONOLITHIC SILICON This specification is approved for use by all Departments and Agencies of the Department of Defense.
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MIL-M-38510/117C
MIL-M-38510/117B
MIL-PRF-38535
LM117H
LM117K
LM150K
LM138K
transistor marking E39
E43 marking
425V03
transistor MARKING K4
qml38535
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STF-01-FS
Abstract: SCF-154426-02-MA
Text: SEAF to SEAM CUSTOM ISSUE FOR REVIEW. SCF-154426-02-MA RELEASE FOR LIMITED PRODUCTION TOP LAYER C1 C2 UPDATE ITEM NUMBERS IN BOM ASP`S ARE REVERSED ; UPDATE C4 FROM .34 TO .40 10.000 PINOUT TABLE J1 9.3994 J2 K1 A1 LAYER STACKUP C8 SEAM SEAF C3 C9 K40 SCF-154426-02-MA
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SCF-154426-02-MA
FR0100)
LEX\SCF\154000\154426-02\SCF-154426-02-MA
ASP-134486-01
ASP-134488-01
STF-01-FS
STF-02-NS
SUB-SCF-154426-02-MA
STF-01-FS
SCF-154426-02-MA
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FR0100
Abstract: ASP-134486-01 UL796 ASP-134488-01 STF-02-NS NA-FL-WI-2003-M STF-01-FS FR8525 IPC-6013 NA-FL-WI-1026-M
Text: SEAF to SEAM CUSTOM RELEASED FOR LIMITED PRODUCTION SCF-154426-03-MA UPDATE CONNECTOR HEIGHTS IN SIDE VIEW. TOP LAYER 5.000 C1 PINOUT TABLE C2 J1 4.3994 UPDATE ITEM NUMBERS IN BOM. SIGNAL J2 A1 RELEASE FOR PRODUCTION;ADD COVERFILM OPENINGS UNDER CONNECTOR STANDOFFS
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SCF-154426-03-MA
FR0120
FR8525
LEX\SCF\154000\154426-03\SCF-154426-03-MA
ASP-134486-01
ASP-134488-01
STF-01-FS
STF-02-NS
SUB-SCF-154426-03-MA
FR0100
UL796
NA-FL-WI-2003-M
FR8525
IPC-6013
NA-FL-WI-1026-M
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD44164085, 44164185, 44164365 18M-BIT DDRII SRAM SEPARATE I/O 2-WORD BURST OPERATION Description The µPD44164085 is a 2,097,152-word by 8-bit, the µPD44164185 is a 1,048,576-word by 18-bit and the µPD44164365
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PD44164085,
18M-BIT
PD44164085
152-word
PD44164185
576-word
18-bit
PD44164365
288-word
36-bit
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M15821EJ2V0DS
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD44164082, 44164182, 44164362 18M-BIT DDRII SRAM 2-WORD BURST OPERATION Description The µPD44164082 is a 2,097,152-word by 8-bit, the µPD44164182 is a 1,048,576-word by 18-bit and the µPD44164362 is a 524,288-word by 36-bit synchronous double data rate static RAM fabricated with advanced CMOS technology using
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PD44164082,
18M-BIT
PD44164082
152-word
PD44164182
576-word
18-bit
PD44164362
288-word
36-bit
M15821EJ2V0DS
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uPD44165084
Abstract: uPD44165084F5-E30-EQ1 uPD44165084F5-E33-EQ1 uPD44165084F5-E40-EQ1 D18 D16 family nec
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD44165084, 44165184, 44165364 18M-BIT QDRTMII SRAM 4-WORD BURST OPERATION Description The µPD44165084 is a 2,097,152-word by 8-bit, the µPD44165184 is a 1,048,576-word by 18-bit and the µPD44165364 is a 524,288-word by 36-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full
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PD44165084,
18M-BIT
PD44165084
152-word
PD44165184
576-word
18-bit
PD44165364
288-word
36-bit
uPD44165084
uPD44165084F5-E30-EQ1
uPD44165084F5-E33-EQ1
uPD44165084F5-E40-EQ1
D18 D16 family nec
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XC601B
Abstract: marking 601b fet e22 diode zener ZD 103 diode marking e41
Text: XC601B Series Lithium Secondary Battery Charge / Discharge Protection IC u u u u u CMOS, Low power consumption Single cell Lithium Ion secondary battery use Over-charge detection : 4.05V to 4.45V ± 1.0% Over-discharge detection : 2.1V to 2.9V ± 3.0% Short circuit protection : 0.05V to 0.2V
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XC601B
XC601BN105
XC601BN110
XC601BN205
XC601BN210
XC601BN305
XC601BN310
XC601BN405
XC601BN410
marking 601b
fet e22
diode zener ZD 103
diode marking e41
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corrosion
Abstract: Mecatraction JUPITER e series connector MS JUPITER e series connector E44-E43 CM-501-MS MSH Connectors MSH 14 Connectors burndy GROUNDING CONNECTORS RG302
Text: MSH/MPH series Connectors Connectors for for navy navy applications applications and and heavy heavy duty duty industries industries MSH/MPH series Connectors and interconnect systems for harsh environments The company designs, manufactures and markets high performance interconnect solutions for severe environments
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2006E
corrosion
Mecatraction
JUPITER e series connector MS
JUPITER e series connector
E44-E43
CM-501-MS
MSH Connectors
MSH 14 Connectors
burndy GROUNDING CONNECTORS
RG302
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25LB10-Q-Z
Abstract: 25LB10-Q
Text: Mechanical Encoders SERIES 25L Hex, Gray and Quadrature Code FEATURES • Price Competitive to Similar Designs • Quality Construction and Contact Materials • Multiple Code and Indexing Choices DIMENSIONS • 100,000 Life Cycles • Less than 1.0" Square
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25LB10-Q-Z
25LB10-Q-Z
25LB10-Q
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UCD224
Abstract: transistor 309 JCD222 PMBFJ308 PMBFJ309 PMBFJ310 MCD217 TIL 309
Text: GOEHOST Philips Sem iconductors E33 IAPX N-channel silicon field-effect transistors N a piE R Prelim inary specification PM B FJ308/309/310 P H IL IP S /D IS C R E T E b7E PIN CONFIGURATION FEATURES • Low noise • Interchangeability of drain and source connections
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FJ308/309/310
PMBFJ308:
PMBFJ309:
PMBFJ310:
PMBFJ308/309/310
PMBFJ308,
UCD224
transistor 309
JCD222
PMBFJ308
PMBFJ309
PMBFJ310
MCD217
TIL 309
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HN3C02F
Abstract: toshiba voltage tuner BL00
Text: TOSHIBA HN3C02F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N3C02F Unit in mm TV TUNER, UHF OSCILLATOR APPLICATION. TV TUNER, UHF CONVERTER APPLICATION. • • +0.2 2.8 - 0.3 +0.2 1.6 -0 .1 Including Two Devices in SM6 Super Mini Type with 6Leads
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HN3C02F
N3C02F
2400MHz
HN3C02F
toshiba voltage tuner
BL00
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Untitled
Abstract: No abstract text available
Text: TOSHIBA HN3C02F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N3C02F Unit in mm TV TUNER, UHF OSCILLATOR APPLICATION. TV TUNER, UHF CONVERTER APPLICATION. • • +0.2 2.8 - 0.3 +0.2 1.6 -0 .1 Including Two Devices in SM6 Super Mini Type with 6Leads
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HN3C02F
N3C02F
2400MHz
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Untitled
Abstract: No abstract text available
Text: SILICON NPN EPITAXIAL TYPE SW ITCHING, INVERTER CIRCUIT, INTERFACE RN1607-RN1609 CIRCUIT AND Unit in mm DRIVER + 0.2 2.8 - n.3 CIRCUIT APPLICATIONS. + 0.2 • • • • • 1.6 - 0.1 Including Two Devices in SM6 Super Mini Type with 6 leads W ith Built-in Bias Resistors
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RN1607-RN1609
RN2607
RN2609
RN1607
RN1608
RN1609
RN1608
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Untitled
Abstract: No abstract text available
Text: RN4605 SILICON PNP EPITAXIAL PLANAR TYPE SILIC0N NPN EPITAXIAL PLANAR TYPE SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AN D DRIVER CIRCUIT APPLICATIONS. 2 .8 U nit in mm +02 0.3 - + 0.2 1. 6 - 0.1 • Including Two Devices in SM6 Super Mini Type with 6 leads
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RN4605
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e33b
Abstract: tuner uhf Ghz HN3C03F hn3c03
Text: TOSHIBA HN3C03F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N3C03F Unit in mm TV TUNER, UHF OSCILLATOR APPLICATION. TV TUNER, UHF CONVERTER APPLICATION. • • +0.2 2.8 - 0.3 +0.2 1.6 -0 .1 Including Two Devices in SM6 Super Mini Type with 6Leads
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HN3C03F
N3C03F
e33b
tuner uhf Ghz
HN3C03F
hn3c03
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HN3C01F
Abstract: No abstract text available
Text: TOSHIBA HN3C01F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C01F TV TUNER, VHF CONVERTER APPLICATION. TV VHF RF AMPLIFIER APPLICATION. Unit in mm + 2.8 - • Including Two Devices in SM6 Super Mini Type with 6Leads • Low Reverse Transfer Capacitance : Cre = 0.38pF (Typ.)
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HN3C01F
N3C01F
1400MHz
HN3C01F
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td 1603
Abstract: 1606 B 1603CR
Text: RN1601, 1602,1603 RN1604, 1605,1606 RN160I SW ITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT A N D U nit in mm DRIVER + 0.2 CIRCUIT APPLICATIONS. 2 ji-n .3 + 0.2 Î.6-0.1 ET Including Two Devices in SM6 (Super Mini Type with 6 leads) W ith Built-in Bias Resistors
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RN1601,
RN1604,
RN160I)
RN2601
RN2606
RN1601
RN1602
RN1603
RN1604
RN1605
td 1603
1606 B
1603CR
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TOSHIBA Marking r2
Abstract: No abstract text available
Text: SILICON PNP EPITAXIAL PLANAR TYPE SILICON NPN EPITAXIAL PLANAR TYPE RN4608 U nit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT + 0.2 AN D DRIVER CIRCUIT APPLICATIONS. 2.8 -0 .3 + 0.2 1.6-0.1 • • • • Including Two Devices in SM6 Super Mini Type with 6 leads
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RN4608
47kil
TOSHIBA Marking r2
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