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    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI DIODE MODULES RM75TC-M,-H,-24,-2H MEDIUM POWER GENERAL USE INSULATED TYPE RM75TC-M,-H,-24,-2H DC output current. 150A Repetitive peak reverse voltage 400/800/1200/1600V • 3 phase bridge • Insulated Type • UL Recognized


    OCR Scan     		PDF RM75TC-M 400/800/1200/1600V E8Q276 E80271 -24f-2H

    a2hb transistor

    Abstract: 1000A diode Transistor AC 188 A2HB 20/a2hb transistor
    Text: MITSUBISHI TRANSISTOR MODULES QM 1000H A-2HB HIGH POWER SWITCHING USE INSULATED TYPE | QM1000HA-2HB • Ic Collector current. • V C EX Collector-emitter voltage. • hFE DC current gain. 10 00A 1000V


    OCR Scan     		PDF 1000H QM1000HA-2HB E8Q276 E80271 a2hb transistor 1000A diode Transistor AC 188 A2HB 20/a2hb transistor

    QM75DY-24B

    Abstract: transistor de 1200v 5a
    Text: MITSUBISHI TRANSISTOR MODULES QM75DY-24B HIGH POWER SWITCHING USE INSULATED TYPE Q M 75DY-24B • • • • • tc Collector current. 75A Vcex Collector-emitter voltage.1200V hra DC current gain . 750 Insulated Type


    OCR Scan     		PDF QM75DY-24B 75DY-24B E8Q276 E80271 QM75DY-24B transistor de 1200v 5a