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    ECB TRANSISTORS Search Results

    ECB TRANSISTORS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    ECB TRANSISTORS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2n2712 data sheet

    Abstract: 2N3711 equivalent 2N3904 2n4058 2N2926 2N3393 2N3859A equivalent to PNP 2N2712 2N2714 2N2923
    Text: Small Signal Transistors TO-92 Case TYPE NO. DESCRIPTION LEAD VCBO VCEO VEBO CODE V (V) ICBO @ VCB (nA) (V) MAX 5.0 *ICES *ICEV MAX 500 18 hFE @ VCE @ IC (V) (mA) NF toff 2N2712 NPN AMPL/SWITCH ECB MIN 18 - - - - 2N2714 NPN AMPL/SWITCH ECB 18 18 5.0


    Original     		PDF 2N2712 2N2714 2N2923 2N2924 2N2925 2N4289 2N4400 2n2712 data sheet 2N3711 equivalent 2N3904 2n4058 2N2926 2N3393 2N3859A equivalent to PNP 2N2712 2N2714 2N2923

    bd679 PNP transistor

    Abstract: BD679 BD680
    Text: Power Transistors www.jmnic.com BD680 Silicon PNP Transistors Features ECB With TO-126 package In monolithic Darlington configuration This transistor is intended for use in medium power linar and switching applications Complement to type BD679 Absolute Maximum Ratings Tc=25


    Original     		PDF BD680 O-126 BD679 O-126 bd679 PNP transistor BD679 BD680

    2sa1249

    Abstract: 2SC3117
    Text: Power Transistors INCHANGE 2SC3117 Silicon NPN Transistors ‹ Features ECB ﹒ With TO-126 package ﹒ Complement to type 2SA1249 ﹒ Color TV sound output,conveters inverters ‹ Absolute Maximum Ratings Tc=25℃ SYMBOL RATING UNIT VCBO Collector to base voltage


    Original     		PDF 2SC3117 O-126 2SA1249 O-126 2sa1249 2SC3117

    2N3906 EBC

    Abstract: 2N5381 2N4125 EBC mps8097 2N3906 PNP PNP 2N3906 2N5551 circuit 2n2712 data sheet 2N3707 2N3711 equivalent
    Text: Small Signal Transistors TO-92 Case TYPE NO. DESCRIPTION LEAD VCBO VCEO VEBO CODE V (V) ICBO @ VCB (nA) (V) MIN 5.0 *ICES *ICEV MAX 500 18 hFE @ VCE @ IC (V) MIN 75 *hFE (1kHZ) MAX 250 (mA) VCE (SAT) @ IC Cob (V) (mA) fT NF toff 2N2712 NPN AMPL/SWITCH ECB


    Original     		PDF 2N2712 2N2714 2N2923 2N2924 PN5828 PN5910 PN6010 2N3906 EBC 2N5381 2N4125 EBC mps8097 2N3906 PNP PNP 2N3906 2N5551 circuit 2n2712 data sheet 2N3707 2N3711 equivalent

    2N5381

    Abstract: 2N2926 transistors TO-92 case 2N3707
    Text: Small Signal Transistors TO-92 Case TYPE NO. DESCRIPTION LEAD VCBO VCEO VEBO CODE V ECB MIN 18 (V) *VCES MIN 18 (V) ICBO @ VCB (nA) (V) MAX 5.0 *ICES *ICEV MAX 500 18 hFE @ VCE @ IC (V) MIN 75 *hFE (1kHZ) MAX 250 (mA) VCE (SAT) @ IC Cob (V) (mA) fT NF toff


    Original     		PDF

    2N4058

    Abstract: 2N2712 2N2714 2N2923 2N2924 2N2925 2N2926 2N3391A 2N3392 2N3393
    Text: Small Signal Transistors TO-92 Case TYPE NO. DESCRIPTION LEAD VCBO VCEO VEBO CODE V ECB MIN 18 (V) *VCES MIN 18 (V) ICBO @ VCB (nA) (V) MAX 5.0 *ICES *ICEV MAX 500 18 hFE @ VCE @ IC (V) MIN 75 *hFE (1kHZ) MAX 250 (mA) VCE (SAT) @ IC Cob (V) (mA) fT NF toff


    Original     		PDF 2N2712 2N2714 2N2923 2N2924 2N4264 2N4287 2N4289 2N4400 2N4058 2N2712 2N2714 2N2923 2N2924 2N2925 2N2926 2N3391A 2N3392 2N3393

    MPSW93

    Abstract: MPSW92 BDC06 MPSW43 BDC05 BDC07 BDC08 MPSW13 MPSW42 T092
    Text: SMALL-SIGNAL TRANSISTORS — PLASTIC continued High Voltage T092 1 WATT DEVICE BDC05 BDC06 BDC07 BDC08 HFE ICBO EUROPEAN VERSION IC Max (A) max (nA) VCB min PIN OUT PO LA BVCEO (V) ECB ECB ECB ECB N P N P 300 300 250 250 0.5 0.5 0.5 0.5 10 10 10 10 200 200


    OCR Scan     		PDF BDC05 BDC06 BDC07 BDC08 MPSW42 MPSW92 MPSW43 MPSW93 10W42 MPSW13 T092

    2n3904 TO-92

    Abstract: No abstract text available
    Text: Transistors TO-92 JEDEC Standards Numbers •N P N Transistors General purpose small signal amplifiers Package B V cbo Min. BV ceo Min. 2N2925 TO -92 (ECB) 25V 25V 2N3711 MPS3711 TO -92 (ECB) CEBC) 30V 2N3860 TO -92 (ECB) 2N5088 BVEBo Min. hFE Vce (sat)


    OCR Scan     		PDF 100nA 160MHz 2N2925 2N3711 MPS3711 2N3860 4pF-92 100mA 2n3904 TO-92

    z10m

    Abstract: psa56
    Text: Transistors TO-92 JEDEC Standards Numbers #N PN Transistors General purpose small signal amplifiers P a ckage BV qbo Min. BV ceo Min. 2N2925 TO -92 (ECB) 25V 25V 2N3711 MPS3711 TO -92 (ECB) (EBC) 30V 2N3860 TO -92 (ECB) 2N5088 BV ebo Min. hFE Min . Max.


    OCR Scan     		PDF 100nA 160MHz 2N2925 2N3711 MPS3711 2N3860 100nA V100m PS-A63 z10m psa56

    TO92 30v 800ma

    Abstract: 180NS
    Text: MOE T> " imiiirr i i V- n‘ T flS flW QQ032fil 3 BERHM ~~ ~F27-0 • P N P Transistors T O -92) General Purpose Small Signal Amplifiers Package BVceo (Fig. 1)' Min. TO-92 2N3702 (ECB) 40V MPS3702 (EBC) TO-92 2N3703 (ECB) 50V MPS3703 (EBC) TO-92 2N3058


    OCR Scan     		PDF QQ032fil 2N3702 MPS3702 2N3703 MPS3703 2N3058 RN4058 2N40S9 RN4059 2N4060 TO92 30v 800ma 180NS

    2SD471

    Abstract: 2SB564 BO9477
    Text: 2SD471 SILICON TRANSISTORS TO-92 The 2SB564 PNP and 2SD471 (NPN) are designed for use in driver and output stages of audio frequency amplifiers. ABSOLUTE MAXIMUM RATINGS ECB 30V Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO 25V Emitter-Base Voltage


    OCR Scan     		PDF 2SD471 2SB564 100nA 100mA 2SD471 2SB564 BO9477

    2SB621A

    Abstract: 2SB621 2SD592 2SD592A
    Text: 2SD592,A SILICON TRANSISTORS TO-92 2SB621,A P N P & 2SD592,A (NPN) are complementary silicon planar epitaxial transistors designed for AF output amplifiers. •»I ECB ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage Collector-Emitter Voltage Emittter-Base Voltage


    OCR Scan     		PDF 2SD592 2SB621 2SD592A 2SB621A 750mW /2SD592 2SB621A

    100ria

    Abstract: 25V6K RN5305 2N4494
    Text: H T ransisto rs •Transistors • NPN Transistors TO-92 General Purpose Small Signal Amplifiers Type 2N3707 MPS3707 2N3708 MPS3708 2N3709 MPS3709 2N3701 MPS3710 2N3711 MPS3711 2N3900A 2N4409 2N4494 2N4495 2N5088 Package BV. „ (Fig. 1) Mm TO-92 (ECB) 30V


    OCR Scan     		PDF 2N3707 MPS3707 2N3708 MPS3708 2N3709 MPS3709 2N3701 MPS3710 2N3711 MPS3711 100ria 25V6K RN5305 2N4494

    2SA673A

    Abstract: 2SC1213A ic100na NPN transistor ECB TO-92
    Text: 2SA673A 2SC1213A SILICON TRANSISTOR 2SA673A PNP and 2SC1213A TO-92 (NPN) are silicon epitaxial transistors designed for medium power amplifiers and switching applications. (PNP) is complementary to 2SC1213A 2SA673A (NPN). ECB ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage


    OCR Scan     		PDF 2SA673A 2SC1213A 2SA673A 2SC1213A 500mA 400mW 100mA ic100na NPN transistor ECB TO-92

    Q321

    Abstract: No abstract text available
    Text: MICRO BC368,9 XXÍA l TO-92B BC 368 NPN and BC 369 (PNP) are complementary silicon epitaxial transistors for audio frequency application. ABSOLUTE MAXIMUM RATINGS • ecb' Collector Current-Continuous — — 1A ._ Collector-Emitter Voltage VCE0 20V Emitter-Base Voltage


    OCR Scan     		PDF BC368 O-92B 500mA 20MHz Q321

    BVCE0-20V

    Abstract: No abstract text available
    Text: MICRO BC368,9 I K ‘ At. 'R. TO-92B BC 368 NPN and BC 369 (PNP) are complementary silicon epitaxial transistors for audio frequency application. ABSOLUTE MAXIMUM RATINGS ECB Collector Current-Continuous 1A CEO 20V Emitter-Base Voltage VEBO 5V Total Power Dissipation


    OCR Scan     		PDF O-92B 500mA 20MHz 300jiS, BVCE0-20V

    2sb564

    Abstract: 2SD471
    Text: W& 2SB564 2SD471 • t t v SILICON TRANSISTORS TO-92 The 2SB564 PNP and 2SD471 (NPN) are designed for use in driver and output stages of audio frequency amplifiers. ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage Collector-Emitter Voltage ECB VCBO VCEO VEBO


    OCR Scan     		PDF 2SB564 2SD471 2SB564 100nA 100mA 2SD471

    Untitled

    Abstract: No abstract text available
    Text: CRO DESCRIPTION BC560LB is PNP silicon planar epitaxial transistors for use in AF small signal amplifier stages and direct coupled circuits. BC560LB PNP SILICON TRANSISTOR TO-92B ECB 45V 50V 5V 100mA 360mW -55 to + 150°C VCEO VCBO VEBO IC Pd Tj,Tstg II •f5


    OCR Scan     		PDF BC560LB BC560LB O-92B 100mA 360mW 300/xS,

    Untitled

    Abstract: No abstract text available
    Text: J M mm ¡¡¡f ! 2SB621.A 2SD592,A rB Hl I SILICON TRANSISTORS T O -9 2 2SB621,A PNP & 2SD592,A (NPN) are complementary silicon planar epitaxial transistors designed for AF output amplifiers. ECB ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage Collector-Emitter Voltage


    OCR Scan     		PDF 2SB621 2SD592 /2SD592 2SB621A/2SD592A

    2N5308

    Abstract: 2N5306 631 TO92 transistor 7k
    Text: Datasheet 2IM5306 2N5308 Central NPN SILICON DARLINGTON TRANSISTOR Semiconductor Corp. 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JED EC TO-92 CASE (ECB) Manufacturers of World Class Discrete Semiconductors DESCRIPTION


    OCR Scan     		PDF 2im5306 2n5308 to-92 2N5306, 2N5308 2N5306 100nA 631 TO92 transistor 7k

    IC 368

    Abstract: No abstract text available
    Text: ¡ E P I T A X I A L TO-92B BC 368 NPN and BC 369 (PNP) are complementary silicon epitaxial transistors for audio frequency application. ABSOLUTE MAXIMUM RATINGS ECB 1A Collector Current-Continuous CEO 20V Emitter-Base Voltage VEBO 5V Total Power Dissipation


    OCR Scan     		PDF 500mA 20MHz 300jiS, IC 368

    2n 2222A 3904

    Abstract: No abstract text available
    Text: DGG7423 ^ 2 •RHU TO-92 JEDEC Standards Numbers • N P N Transistors General purpose small signal amplifiers B V Ebo Min. ICBO Vbe (sat) Max. Cob Max. fr Min. @ Ic 10pF 160MHz Typ. B V qbo Min. BV ceo Min. 2N 2925 TO-92 (ECB) 25V 25V 5V 100nA 25V 235 470


    OCR Scan     		PDF DGG7423 160MHz 100nA 2N3711 MPS3711 90MHz MPS-A65 100nA 2n 2222A 3904

    Untitled

    Abstract: No abstract text available
    Text: CRO BC560LB PNP SILICON TRANSISTOR TO-92B DESCRIPTION BC560LB is PNP silicon planar epitaxial transistors for use in AF small signal amplifier stages and direct coupled circuits. ECB 45V 50V 5V 100mA 360mW -55 to + 150°C VCEO VCBO VEBO IC Pd Tj,Tstg * Pulse test : pulse width <300/xS, duty cycle < 2 % .


    OCR Scan     		PDF BC560LB O-92B BC560LB 100mA 360mW 300/xS, 10jiA 100mA

    BDB04

    Abstract: BDB04 MOTOROLA BDC02A BDB01A BDB01B BDB028 BDB02A BDC01A BDC01B BDC01C
    Text: SMALL SIGNAL TRANSISTORS — PLASTIC continued High-Current T092 1 WATT EUROPEAN VERSION PIN OUT ECB PNP / NPN EBC ICBO BVCEO HFE (V) IC Max (A) max (nA) VCB min max VCEsat IC(mA) VCE (V) max V ICmA IB (mA) min MHz IC (mA) B D C 01 A B D C 02 A BDB01A BDB02A


    OCR Scan     		PDF BDC01A BDC02A BDB01A BDB02A BDC01B BDC02B BDB01B BDB028 BDC01C BDC02C BDB04 BDB04 MOTOROLA