Untitled
Abstract: No abstract text available
Text: ECH-12.288M EC H -12.288M Series Resistance Welded HC-49/U Crystal Nominal Frequency 12.288MHz Frequency Tolerance/Stability ±15ppm at 25°C, ±30ppm over -40°C to +85°C Load Capacitance 18pF Parallel Resonant Mode of Operation AT-Cut Fundamental ELECTRICAL SPECIFICATIONS
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ECH-12
HC-49/U
288MHz
15ppm
30ppm
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ech4
Abstract: equivalente
Text: ECH 4 ECH 4 max36t Triode-heptode De ECH 4 is een triode-heptode, w aarvan de electrische gegevens overeenkomen m et die v an de sleutelbuis ECH 21. Bij de ECH 4 zijn het heptode- en h et triodegedeelte eveneens afzonderlijk n a ar buiten gevoerd, zoodat de system en elk voor een afzonderlijk doel kunnen worden geb ruikt.
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advantages automatic phase changer
Abstract: ebl21 ECH21 automatic phase changer file uch21 automatic phase changer circuit diagram of FTA receiver UBL21 triode push-pull circuit 3 phase automatic phase changer
Text: ECH 21 ECH ‘2 t Irio ile Iiep to d e The ECH 21 is a variable-mu triode-heptode intended for A.C. supply. The two electrode systems employ a common cathode, consuming approximately 2.1 W. Fig. 1 Four stages in assembly of the triode-heptode all-glass valve ECH 21.
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ech valve
Abstract: ech4 VALVE ECH21 triode push-pull circuit Scans-0017854
Text: EC H 4 ECH 4 T riode—heptode The ECH 4 is a triode-heptode of which the electrical characteristics max X. are similar to those of the “all-glass” valve ECH 21. The triode and heptode units both have their own separate external connections and can therefore be used for individual purposes.
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YJ1200
Abstract: ech3b 200T potential divider
Text: ECH 3 msx35 1 1 ECH 5 Triode hexode max 95 The ECH 3 is a variable-m u frequency-changer, constructed on the principle of the triode-hexode and th u s consisting o f a hexode — the frequency-changer proper — a n d a triode to function as oscillator. B oth units are m ounted round a common cathode, of
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oszillator
Abstract: S276 UV 471 ech3b ABB CT
Text: ECH 3 ECH 3 Triode-Hexode max 36 Die R öhre E C H 3 is t eine M ischröhre m it v e rän d e rlic h er S te ilh e it n a c h dem P rin z ip d e r T riode-H exode. Sie b e ste h t m ith in aus der K o m b in atio n einer H exode als d e r eigentlichen M ischröhre u n d einer
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EChs Series
Abstract: 1H104 1H224 1H473 1H474 S1H102 1H153 1H152
Text: Film Capacitors PPS Type ECH-S Series Suitable for circuits requiring high heat resistance and tight tolerance. Non-inductive wound using polyphenylene sulfide film which has high heat resistance and excellent electrical characteristics. Features • • •
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-100PPM/
EChs Series
1H104
1H224
1H473
1H474
S1H102
1H153
1H152
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Untitled
Abstract: No abstract text available
Text: R ev: 00 ISSUE NO : ELECTR O -M ECH A N ICS D A T E O F IS S U E : 2007. 08. 21 SPECIFICATION MODEL : SLHNNWH629T0 HIGH POW ER LED PKG -SUNNIX CUSTOMER :_ SAMSUNG ELECTRO-MECHANICS DRAWN CHECH ED APPROVED linary lim Pre CUSTOMER CHECKED CHECKED
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SLHNNWH629T0
SLHNNWH629T0
SLHNNWH629TO
SLHNNWH629T0)
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2491e
Abstract: 6SMP proner comatel P80100 comatel
Text: I I E n c o m b r e m e n t c o u v e r c l e f e r mé I II II I Ech I L <o Ech 1 C O 0~> □ X □ Cou l e u r du boi f i e r uO' N a t u r e l le CO Ma t i è re Références S MP 1 17 P 80 100 84 872 S MP 1 3 6 P 80 100 86 872 SMP 117 P80 100 84 872 02
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TIC 33 LCD
Abstract: No abstract text available
Text: The In form ation d is c lo s e d heroin w ac aHglno"teDl by and Is t h e p r o p e r t y o f L em sltro n T ech n o lo gies. D e n s ltro n T ech n o lo g ie s r e s e r v e s a ll pa-terrt, p r o p r ie t a r y , d rslgn ^w sej s a l e , m a n u fa c tu rin g and
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DG-870-
DG-870-XP-W
0WS52
TIC 33 LCD
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2N5590
Abstract: 2n5591 2N559 2N5589 SD1216 transistor 2N5589 SD1214 2n558 2N556 M135
Text: Microsemi P rog resa P o w e re d b y T ech no log y Montgomeryville, PA 18936 Tel: 215 631-9840 2N5589 2N5590/2N5591 RF & MICROWAVE TRANSISTORS 130.230MHZ FM MOBILE APPLICATIONS FREQUENCY 175MHz VOLTAGE 13.6 V POWER OUT 8 TO 25W HIGH POWER GAIN HIGH EFFICIENCY
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2N5589
2N5590/2N5591
230MHz
175MHz
SD1212-02
SD1214-12
2N5590
SD1216
2N5591
2N5590
2n5591
2N559
2N5589
transistor 2N5589
SD1214
2n558
2N556
M135
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4863-2
Abstract: l 4863-2 C107 MS21 cathode ray schiebe
Text: R E C TANGULAR TELEVISION CATHODE RAY TUBE with metal cone, ion trap and filterglass. TUBE A RAYONS CATHODIQUES DE ^TELEVISION RECTANGULAIR avec cône métallique» trappe a ions et verre filtre. R ECH T ECKIGE FERNSEHKATHODENSTRAHLROHRE mit Metallkonus, Ionenfalle und Filterglas.
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MW43-43/02
4863-2
l 4863-2
C107
MS21
cathode ray
schiebe
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DP-45
Abstract: pv41
Text: PRELIMINARY IDT7MPV4170 IDT7MPV4171 IDT7MPV4172A IDT7MPV4173 64K/128K/256K/512K x 36 SYNCHRONOUSSRAM MODULE FAMILY In tegrated D e v ice T ech n olo gy , l i e . FEATURES: DESCRIPTION: • Pin compatible flow-through synchronous SRAM module family • 168 position angled DIMM Connector,
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64K/128K/256K/512K
IDT7MPV4170
IDT7MPV4171
IDT7MPV4172A
IDT7MPV4173
PV4170
7MPV4171
PV4172
PV4172A
PV4173
DP-45
pv41
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Untitled
Abstract: No abstract text available
Text: A4491091 21.5 NOTES: ELECTRICAL: 1. 2. 3. 4. VOLTAGE RATING; 125 VAC RMS. CURRENT RATING; 1.5 AMP. CONTACT RESISTANCE: 35 MILLIOHMS MAX. INSULATION RESISTANCE: 1000 MEGOHMS MIN 5Q D VDC. 5. DIELECTRIC STRENGTH: 1000 VAC RMS 60Hz, 1MIN. M ECH AN ICA L: 1. HOUSING MATERIAL; GLASS FILLED POLYESTER UL 9 4 V -0 .
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A4491091
-l-85
GE593B2CI
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Untitled
Abstract: No abstract text available
Text: Integrated D evice T ech no logy, Inc. HIGH-SPEED 2K x 9 DUAL-PORT STATIC RAM PRELIMINARY IDT7012 FEATURES: DESCRIPTION: • High-speed access - Military: 35/45/55/70ns max. - Commercial: 25/35/45/55ns (max.) • Low-power operation - IDT7012S Active: 400mW (typ.)
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IDT7012
35/45/55/70ns
25/35/45/55ns
IDT7012S
400mW
IDT70121Active:
MIL-STD-883,
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S0242
Abstract: No abstract text available
Text: HIGH-PERFORMANCE CMOS BUS INTERFACE REGISTERS IDT54/74FCT821AT/BT/CT IDT54/74FCT823AT/BT/CT/DT IDT54/74FCT825AT/BT/CT Hhtegiated D ev ize T ech n ology, l i e . FEATURES: DESCRIPTION: • Common features: The FCT82xT series is built using an advanced dual metal
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IDT54/74FCT821AT/BT/CT
IDT54/74FCT823AT/BT/CT/DT
IDT54/74FCT825AT/BT/CT
IL-STD-883,
IDT54/74FCT821AT/BT/CT,
823/825AT/BT/CT/DT
MIL-STD-883,
10-Bit
823AT
825AT
S0242
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Untitled
Abstract: No abstract text available
Text: life Integrated D e v jc e T ech n ology, i i c . 3.3V CMOS 1-BITTO 4-BIT IDT74ALVCH16832 ADDRESS REGISTER/DRIVER ADVANCE INFORMATION WITH 3-STATE OUTPUTS AND BUS-HOLD FEATURES: - DESCRIPTION: 0.5 MICRON CMOS Technology Typical tsK o (Output Skew) < 250ps
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IDT74ALVCH16832
ALVCH16832
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Untitled
Abstract: No abstract text available
Text: Hhtegiated D ev ize T ech n ology, l i e . FAST CMOS 18-BIT UNI VERSAL BUS TRANSCEIVER WITH 3-STATE OUTPUTS IDT74FCT16601AT/CT/ET IDT74FCT162601 AT/CT/ET FEATURES: DESCRIPTION: • Common features: The FC T 16601T and FC T162601T 18-bit registered trans
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18-BIT
IDT74FCT16601AT/CT/ET
IDT74FCT162601
16601T
T162601T
IDT74FCT16601AT/CT/ET,
162601AT/CT/ET
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Untitled
Abstract: No abstract text available
Text: FAST CMOS 16-BIT BUS IDT54/74FCT16652T/AT/CT/ET IDT54/74FCT162652T/AT/CT/ET TRANSCEIVER/ REGISTERS Integrated D e v r e T ech n ology, Inc. FEATURES: • Common features: - 0.5 MICRON CM O S Technology - High-speed, low-power CMOS replacement for ABT functions
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16-BIT
IDT54/74FCT16652T/AT/CT/ET
IDT54/74FCT162652T/AT/CT/ET
250ps
IL-STD-883,
200pF,
IDT54/74FCT16652T/AT/CT/ET,
FCT162652T/AT/CT/ET
16652T
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Untitled
Abstract: No abstract text available
Text: life 3.3V CMOS 16-BIT BUS BUSTRANSCEIVER WITH 3-STATE OUTPUTS IDT74ALVC162245 Integrated D e v i e T ech n o lo gy, l i e . DESCRIPTION: FEATURES: - 0.5 MICRON CMOS Technology Typical tsK o (Output Skew) < 250ps ESD > 2000V per MIL-STD-883, Method 3015;
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16-BIT
IDT74ALVC162245
250ps
MIL-STD-883,
200pF,
635mm
IDT74ALVC162245
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Untitled
Abstract: No abstract text available
Text: DRAWING NO C - 21079+ 0 32.9 REF. 10000000090000 ooooooooooooo 0000000000090 ooooo ooooo oooo oooo oooo ooo ooo ooo ooo ooo oooo oooo ooooo ooooo ooooooooooooo 2.54 REF. 0 0.48 REF. 0000000000000 00000000000001 133 positions Ech. 1:1 4- 4- 4- 4- 4- 4- OOO 4 - 4 - 4 - 4 - 4 - 4 - 4 - - I OOOO + + + + 4- 4- 4OOOO
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Q25/jm
EWOO-0024-97
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s0249
Abstract: S0242 IC 3201-c 8 pin
Text: IDT74FST6800 PRELIMINARY 10-BIT BUS SWITCH WITH PRECHARGE Hhtegiated D ev ize T ech n ology, l i e . while providing a low resistance path for an external driver. These devices connect input and output ports through an nchannel FET. When the gate-to-source junction of this FETis
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10-BIT
IDT74FST6800
MIL-STD-883,
200pF,
P24-1)
S024-2)
S024-8)
S024-9)
s0249
S0242
IC 3201-c 8 pin
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74FCT16500AT
Abstract: No abstract text available
Text: ¡I jd t FAST CMOS 18-BIT REGISTERED TRANSCEIVER IDT54/74FCT16500AT/CT/ET IDT54/74FCT162500AT/CT/ET Untegiated D ev ize T ech n ology, l i e . bit registered transceivers are built using advanced dual metal CMOS technology. These high-speed, low -pow er 18-bit reg
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18-BIT
IDT54/74FCT16500AT/CT/ET
IDT54/74FCT162500AT/CT/ET
250ps
IDT54/74FCT16500AT/CT/ET,
162500AT/CT/ET
S056-1)
S056-2)
74FCT16500AT
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H683
Abstract: 1H104 1H822JB5 1h181 1H822 1h153j 1H473J 1C153 1H472JB5 1h104j
Text: Film Capacitors Chip Type ECH-U B /ECW-U(B) Series Uses simple moldless construction and advanced manufacturing techniques, as well as well-established stacking technology. * Features • • ♦ Small size (minimum size 2.0 x 1.25 mm) High moisture resistance (85 °C, 86 %RH, W. V x 1.0
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3000M
H683
1H104
1H822JB5
1h181
1H822
1h153j
1H473J
1C153
1H472JB5
1h104j
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