tda120XX
Abstract: sdc 7500 pwm control PHILIPS UOC tv kit service code with data TDA12000H1 tda 8823 equivalent tda 8823 samsung colour tv kit circuit diagram schematic diagram TCON lcd samsung sony x35 lcd smd transistor marking HT1
Text: N U N U N U N U N U C C C C C O O O O O TR O TR O TR O TR LL LL LL LL ED ED ED ED C PY PY PY P O O O O C C C U U U N N O O O C C C Product data sheet N N N Rev. 3.6 — 26 April 2006 O TR N N N N N Versatile signal processor for low- and mid-range TV applications
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-TDA110XX/N1F
-TDA120XX/N1F
UOCIII-TDA110XX-120XX/N1F
tda120XX
sdc 7500 pwm control
PHILIPS UOC tv kit service code with data
TDA12000H1
tda 8823 equivalent
tda 8823
samsung colour tv kit circuit diagram
schematic diagram TCON lcd samsung
sony x35 lcd
smd transistor marking HT1
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vt1631
Abstract: IT8888G vt8237 via vt8237R Plus chipset south bridge ESM-CN700 it8888 VT1636 VT8237R PLUS VT1622A VT8237R
Text: ESM-CN700 Series Onboard VIA Eden V4 1 GHz SOM-ETX CPU Module User’s Manual 1st Ed – 26 October 2006 Part No. 2047274100R ESM-CN700 Series FCC Statement THIS DEVICE COMPLIES WITH PART 15 FCC RULES. OPERATION IS SUBJECT TO THE FOLLOWING TWO CONDITIONS:
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ESM-CN700
2047274100R
vt1631
IT8888G
vt8237
via vt8237R Plus chipset south bridge
it8888
VT1636
VT8237R PLUS
VT1622A
VT8237R
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ED-96
Abstract: DC600V Ed96
Text: 6100096681 TO 41749 SEGEA F’RO!I61O25 0 2 07/26/’96 12:10 07,’26 SPEC. Ny,. s~ l?:i? P,02,’14 ED-96028 ‘“w PAGE -.> .— ELECTRONIC COMPO~NTS REPwSEWAlh GROUP SHARP CORPOWTION OPTO-ELECTRONIC DEVICES DIV. SPECIFICATION I DEVICE SPECIFICATION POR
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I61O25
ED-96028
ED-9602$
ED-96
DC600V
Ed96
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X9522
Abstract: X9522V20I-A X9522V20I-B X9522V20IZ-A X9522V20IZ-B
Text: I GNS DE S W E T OR N DUC ED F TE PRO 9520 D N TITU 2329, X MME ECO E SUBS ISData L2 Sheet R T 26, NO I BL 3 S 2 S 2 PO SL 20, I X958 X9522 Laser Diode Control for Fiber Optic Modules January 3, 2006 FN8208.1 DESCRIPTION Triple DCP, Dual Voltage Monitors
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X9520
L22329
X9522
FN8208
X9522
X9522V20I-A
X9522V20I-B
X9522V20IZ-A
X9522V20IZ-B
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115-230V
Abstract: ac dC converter circuit diagram ac to dc converter module LC03-6 IOM2 80912
Text: Ha rd wa re U se r ’s M an ual , DS 2, J un e 2 00 1 Q-SMINT O Evaluation Board SIPB 80912 Version 1.1 Wi r ed Communications N e v e r s t o p t h i n k i n g . Edition 2001-06-26 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München, Germany
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D-81541
115-230V
ac dC converter circuit diagram
ac to dc converter module
LC03-6
IOM2
80912
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W65C816
Abstract: A06 diode RWB 252 diode A23 dba1 62C256 27C256 XC9572 a03p a023
Text: 6 5 4 3 2 1 R E V I SION RECORD L TR E C O NO: A P P R O V ED: D ATE: VCC_ARROW C6 C7 C8 C9 C10 C11 C12 C C C C C C C GND J8 D D GND VCC_ARROW 4 2 4 2 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 OCSE VCC_ARROW 1 21 22 23 24 25 26 27 28 29 30 31 32 J P1
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W65C2
W65C816DB
WD8318
W65C816
A06 diode
RWB 252
diode A23
dba1
62C256
27C256
XC9572
a03p
a023
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PEF 4265 T V2.1
Abstract: PEF4265 PG-VQFN-48-15 PEF 4265 PEF4265T GEMINAX MAX d PEB 4265 V1.2 peb 4365 V2.1 GEMINAX - GEMINAX FAMILY vinetic
Text: O c t o b e r 2 00 6 S LIC -E / TS LIC -E S ub s c ri be r L in e I n t e rf a c e C i rc u it E nh an c ed F ea t ur e S et S LI C - E P E F 42 65 , V er s io n 2 . 1 S LI C - E 2 (P E F 4 26 5- 2) , V e rs i on 2. 1 T S L I C - E ( P E F 4 36 5) , V er s i o n 2 . 1
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PG-DSO-36-15
PEF 4265 T V2.1
PEF4265
PG-VQFN-48-15
PEF 4265
PEF4265T
GEMINAX MAX d
PEB 4265 V1.2
peb 4365 V2.1
GEMINAX - GEMINAX FAMILY
vinetic
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17800
Abstract: 5SDD If 8000 Vrrm 8000 11350
Text: VRRM = 400 V IFAVM = 11350 A IFRMS = 17800 A IFSM = 85000 A VF0 = 0.74 V rF = 0.018 mΩ Rectifier Diode 5SDD 0120C0400 Doc. No. 5SYA1159-01 Oct.00 • Optimized for high current rectifiers • Very low on-state voltage • Very low thermal resistance Blocking
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0120C0400
5SYA1159-01
CH-5600
17800
5SDD If 8000 Vrrm 8000
11350
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Untitled
Abstract: No abstract text available
Text: VRRM = 200 V IFAVM = 11000 A IFRMS = 17300 A IFSM = 85000 A VF0 = 0.75 V rF = 0.020 mΩ Rectifier Diode 5SDD 0120C0200 Doc. No. 5SYA1157-01 Oct.00 • Optimized for high current rectifiers • Very low on-state voltage • Very low thermal resistance Blocking
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0120C0200
5SYA1157-01
CH-5600
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17300A
Abstract: No abstract text available
Text: VRRM = 200 V IFAVM = 11000 A IFRMS = 17300 A IFSM = 85000 A VF0 = 0.75 V rF = 0.020 mΩ Ω Rectifier Diode 5SDD 0120C0200 Doc. No. 5SYA1157-01 Oct.00 • Optimized for high current rectifiers • Very low on-state voltage • Very low thermal resistance
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0120C0200
5SYA1157-01
Surfac200
CH-5600
17300A
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17800
Abstract: DIODE ED 26 5SDD If 8000 Vrrm 8000
Text: VRRM = 400 V IFAVM = 11350 A IFRMS = 17800 A IFSM = 85000 A VF0 = 0.74 V rF = 0.018 mΩ Ω Rectifier Diode 5SDD 0120C0400 Doc. No. 5SYA1159-01 Oct.00 • Optimized for high current rectifiers • Very low on-state voltage • Very low thermal resistance
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0120C0400
5SYA1159-01
CH-5600
17800
DIODE ED 26
5SDD If 8000 Vrrm 8000
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DIODE ED 26
Abstract: 40170 5SDD If 8000 Vrrm 8000
Text: VRRM = 200 V IFAVM = 11000 A IFRMS = 17300 A IFSM = 85000 A VF0 = 0.75 V rF = 0.020 mΩ Rectifier Diode 5SDD 0120C0200 Doc. No. 5SYA1157-01 July 06 • Optimized for high current rectifiers • Very low on-state voltage • Very low thermal resistance Blocking
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0120C0200
5SYA1157-01
CH-5600
DIODE ED 26
40170
5SDD If 8000 Vrrm 8000
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DIODE ED 26
Abstract: 40170 5SDD If 8000 Vrrm 8000
Text: VRRM = 400 V IFAVM = 11350 A IFRMS = 17800 A IFSM = 85000 A VF0 = 0.74 V rF = 0.018 mΩ Rectifier Diode 5SDD 0120C0400 Doc. No. 5SYA1159-01 July 06 • Optimized for high current rectifiers • Very low on-state voltage • Very low thermal resistance Blocking
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0120C0400
5SYA1159-01
CH-5600
DIODE ED 26
40170
5SDD If 8000 Vrrm 8000
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LT028
Abstract: LT022MC LT022PD LT027 LASER LT024MD LT022MC laser diode LT025 lt027 LT015MF LT022
Text: Laser Diode Quick Guides~ypicaI Characteristics x x x x x x x x x x x x x I x x x x x x Quick Guide I [ Model No. ~- - . -n .,. x ., Conformable to No.84zuud/ 01 FUA u >.A .- Wavelength (rim) 750 LT030 series LT021 series LT022 series ~“-: LT023 series
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84zuud/
LT030
LT021
LT022
LT023
LT024
-LT024
LT025
LT026
LT027
LT028
LT022MC
LT022PD
LT027 LASER
LT024MD
LT022MC laser diode
LT015MF
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ED 05 Diode
Abstract: ED 03 Diode
Text: MITSUBISHI FAST RECOVERY DIODE MODULES RM50HG-12S HIGH SPEED SWITCHING USE NON-INSULATED TYPE ed RM50HG-12S DC current . 50A Repetitive peak reverse voltage . 600V • trr Reverse recovery time . 0.2µs
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RM50HG-12S
20MIN.
ED 05 Diode
ED 03 Diode
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1N4775
Abstract: 1N4775A 1N4776 1N4776A 1N4777 1N4777A 1N4778 1N4778A 1N4779 1N4784A
Text: • 8.5 VOLT NOMINAL ZENER VOLTAGE + 5% • TEMPERATURE COMPENSATED ZENER REFERENCE DIODES 1N4775 thru 1N4784A • LOW CURRENT RANGE: 0.5 AND 1.0 mA • METALLURGICALLY BONDED • DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS Operating Temperature: -65°C to +175°C
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1N4775
1N4784A
500mW
1N4775
1N4775A
1N4776
1N4776A
1N4777
1N4777A
1N4778
1N4778A
1N4779
1N4784A
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DIODE ED 26
Abstract: No abstract text available
Text: SKKD 75F power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter brückengleichrichter 4*5 (445 2645* 7 ""# & & & &% ( ( 26( 7 8/ % "9#: /# $-: ; 7 // <
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1N3154
Abstract: 1N3157A ZENER C 3V 1N3156 1N3157-1 1N3157A-1 1N3154-1 1N3154A 1N3155 1N3155A
Text: • 1N3154-1 THRU 1N3157-1 AVAILABLE IN JAN, JANTX, JANTXV 1N3154 thru 1N3157A and AND JANS PER MIL-PRF-19500/158 • 8.4 V0LT NOMINAL ZENER VOLTAGE 1N3154-1 thru 1N3157A-1 • TEMPERATURE COMPENSATED ZENER REFERENCE DIODES • METALLURGICALLY BONDED MAXIMUM RATINGS
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1N3154-1
1N3157-1
1N3154
1N3157A
MIL-PRF-19500/158
1N3157A-1
500mW
1N3154
1N3157A
ZENER C 3V
1N3156
1N3157A-1
1N3154A
1N3155
1N3155A
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Untitled
Abstract: No abstract text available
Text: • 1N3154-1 THRU 1N3157-1 AVAILABLE IN JAN, JANTX, JANTXV 1N3154 thru 1N3157A and AND JANS PER MIL-PRF-19500/158 • 8.4 V0LT NOMINAL ZENER VOLTAGE 1N3154-1 thru 1N3157A-1 • TEMPERATURE COMPENSATED ZENER REFERENCE DIODES • METALLURGICALLY BONDED MAXIMUM RATINGS
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1N3154-1
1N3157-1
1N3154
1N3157A
MIL-PRF-19500/158
1N3157A-1
500mW
1N3154
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hb5-132
Abstract: S370 S370 UDT
Text: VISIB LE LIG HT PRODUCTS Light Emitting Diode REV:B DATE:2005/4/26 iDEVICE NO:HB5-132 (H i-R ed ) iLE N S COLOR: V colored diffusion white diffusion colored transparent water clear iPACKAGE DIMENSIONS: NOTE: 1 .All dimensions are In millimeter. 2 .Lead spacing In measured where the
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HB5-132
hb5-132
S370
S370 UDT
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54LS590
Abstract: 1N3064 1N916 SNJ54LS590J 5962-87517
Text: I 1 LTR REVIS IO NS DATE D ESC R IPTIO N APPROVED REV PA G E REV STATUS OF PAGES REV PAGES Defense Electronics Supply Center Dayton, Ohio Original date of drawing: 26 JANUARY 1988 AMSC N/A 1 2 3 4 PR EPA R ED 5 6 7 8 9 10 BY- 11 12 13 MILITARY DRAWING This drawing is available for use by
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5962-E231
5962-8751701EX
SNJ54LS590J
5962-8751701FX
SNJ54LS590W
5962-87517012X
SNJ54LS590FK
54LS590
1N3064
1N916
SNJ54LS590J
5962-87517
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BH45-704A
Abstract: BH 27 701A facon bd BH22-601A bl 44 704 facon facon bh 27 701 GB 44-706 facon bf facon VX230
Text: FACON 45E D • 345b503 OOOOOlù 5 « F C N FACON SEMICONDUCTEURS/SEMICONDUCTORS T-23-0\ m ouldings m ou lages Vr r m Types V V RMS re c o m m en d ed m ax (V) ■d on re sistive load s u r c h arg e résis tive *d s m / *fsm Ip per diode @ VR U se
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345b503
T-230\
CB-356
C8-350
345b2D3
CB-349
CB-350
BH45-704A
BH 27 701A
facon bd
BH22-601A
bl 44 704 facon
facon bh 27 701
GB 44-706
facon bf
facon
VX230
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1N4474
Abstract: 4661N 1N1492 1N44B 1N4460 1N4471 1N4479
Text: 1N 4460 thru 1N4496 and 1N6485 thru 1N6491 Microisemi Corp. $ The diQite SC O TTSD A LE , A Z ☆JANS* 1.5 WATT G LASS ZEN ER DIODES FEATURES • Microminiature package. • High perform ance characteristics. • Stable operation at temperatures to 200°C.
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1N4496
1N6485
1N6491
MIL-S-19500/406.
1N4460
1N4474
4661N
1N1492
1N44B
1N4471
1N4479
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MLL5523B-1
Abstract: JANTX1N6318US JANTXV1N6317 SP6317 SP6318US
Text: Zener Regulator Diodes Micmsemi . Part Number ZEN 1 MLL4624 MLL4624-1 1N6317 1N6317US JAN1N6317 JAN1N6317US JANTX1N6317 JANTX1N6317US JANTXV1N6317 JANTXV1N6317US SP6317 SP6317US 1N5231A 1N5231A D 07 1N5231B 1N5231B (D07J MLL5231B MLL5231B-1 MLL5523B MLL5523B-1
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ZEN-46
MLL5523B-1
JANTX1N6318US
JANTXV1N6317
SP6317
SP6318US
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