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    EDO RAM 4MX16 Search Results

    EDO RAM 4MX16 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MD2114A/BVA Rochester Electronics LLC STATIC RAM; 1K X 4 Visit Rochester Electronics LLC Buy
    27S13A/BEA Rochester Electronics LLC 27S13A - 2048-Bit (512X4) Bipolar RAM Visit Rochester Electronics LLC Buy
    CY7C09389V-9AXI Rochester Electronics CY7C09389 - 3.3 V 64 K X 18 Synchronous Dual-Port Static RAM, Industrial Temp Visit Rochester Electronics Buy
    CDP1824CD/B Rochester Electronics LLC CDP1824C - 32-Word x 8-Bit Static RAM Visit Rochester Electronics LLC Buy
    MC68A02CL Rochester Electronics LLC MC68A02 - Microprocessor With Clock and Oprtional RAM Visit Rochester Electronics LLC Buy

    EDO RAM 4MX16 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    EDI4164MEV50SM

    Abstract: EDI4164MEV-RP EDI4164MEV60SM EDI4164MEV70SM 4mx16 edo EDI4164MEV50SI
    Text: EDI4164MEV-RP HI-RELIABILITY PRODUCT 4Mx16 EDO Extended Data Out Dynamic RAM 3.3V FEATURES • 4 Meg x 16 bit CMOS Dynamic RAM ■ RAS - Only, CAS-before-RAS, and HIDDEN refresh capability ■ Package: ■ Low Operating Power Dissipation ■ Access Time: 50, 60 and 70ns


    Original     		PDF EDI4164MEV-RP 4Mx16 EDI4164MEV50SM EDI4164MEV60SM EDI4164MEV70SM EDI4164MEV50SI EDI4164MEV60SI EDI4164MEV70SI EDI4164MEV50SM EDI4164MEV-RP EDI4164MEV60SM EDI4164MEV70SM 4mx16 edo EDI4164MEV50SI

    KM416V4104BS

    Abstract: No abstract text available
    Text: DRAM MODULE KMM374F404BS KMM374F404BS EDO Mode without buffer 4M x 72 DRAM DIMM with ECC Using 4Mx16 & 4Mx4, 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM374F404BS is a 4Mx72bits Dynamic RAM high density memory module. The Samsung KMM374F404BS


    Original     		PDF KMM374F404BS KMM374F404BS 4Mx16 4Mx72bits 4Mx16bits 300mil 168-pin KM416V4104BS

    KMM374F804BS

    Abstract: No abstract text available
    Text: DRAM MODULE KMM374F804BS KMM374F804BS Fast EDO Mode without buffer 8M x 72 DRAM DIMM with ECC Using 4Mx16 & 4Mx4, 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM374F804BS is a 8Mx72bits Dynamic RAM high density memory module. The Samsung KMM374F804BS


    Original     		PDF KMM374F804BS KMM374F804BS 4Mx16 8Mx72bits 4Mx16bits 400mil 300mil 168-pin

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM466F804BS1-L KMM466F804BS1-L EDO Mode 8M x 64 DRAM SODIMM Using 4Mx16, 4K Refresh 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung KMM466F804BS1-L is a 8Mx64bits Dynamic • Part Identification RAM high density memory module.


    Original     		PDF KMM466F804BS1-L KMM466F804BS1-L 4Mx16, 8Mx64bits cycles/128ms, 4Mx16bits 400mil

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM466F804CS1-L KMM466F804CS1-L EDO Mode 8M x 64 DRAM SODIMM Using 4Mx16, 4K Refresh 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung KMM466F804CS1-L is a 8Mx64bits Dynamic RAM high density memory module. The • Part Identification


    Original     		PDF KMM466F804CS1-L KMM466F804CS1-L 4Mx16, 8Mx64bits cycles/128ms, 4Mx16bits 400mil

    Untitled

    Abstract: No abstract text available
    Text: September 1996 Revision 1.0 DATA SHEET EDC4UV644 2/4 -(60/70)(J/T)G-S 32MByte (4M x 64) CMOS EDO DRAM Module - 3.3V General Description The EDC4UV644(2/4)-(60/70)(J/T)G-S is a high performance, EDO (Extended Data Out) 32-megabyte dynamic RAM module organized as 4M words by 64 bits, in a 168-pins, dual-in-line (DIMM) memory modules.


    Original     		PDF EDC4UV644 32MByte 32-megabyte 168-pins, MB81V1 32MBom MP-DRAMM-DS-20389-9/96

    tsop 138

    Abstract: No abstract text available
    Text: DRAM MODULE M374F0805DT1-C M374F0805DT1-C Fast EDO Mode without buffer 8M x 72 DRAM DIMM with ECC Using 4Mx16 & 4Mx4, 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung M374F0805DT1-C is a 8Mx72bits Dynamic RAM high density memory module. The Samsung


    Original     		PDF M374F0805DT1-C M374F0805DT1-C 4Mx16 8Mx72bits 4Mx16bits 400mil 300mil 168-pin tsop 138

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE M466F0404DT2-L M466F0404DT2-L EDO Mode 4M x 64 DRAM SODIMM Using 4Mx16, 4K Refresh 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung M466F0404DT2-L is a 4Mx64bits Dynamic RAM high density memory module. The • Part Identification


    Original     		PDF M466F0404DT2-L M466F0404DT2-L 4Mx16, 4Mx64bits cycles/128ms, 4Mx16bits 400mil

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM466F404BS2-L KMM466F404BS2-L EDO Mode 4M x 64 DRAM SODIMM Using 4Mx16, 4K Refresh 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung KMM466F404BS2-L is a 4Mx64bits Dynamic RAM high density memory module. The • Part Identification


    Original     		PDF KMM466F404BS2-L KMM466F404BS2-L 4Mx16, 4Mx64bits cycles/128ms, 4Mx16bits 400mil

    KMM466F404CS2-L

    Abstract: No abstract text available
    Text: DRAM MODULE KMM466F404CS2-L KMM466F404CS2-L EDO Mode 4M x 64 DRAM SODIMM Using 4Mx16, 4K Refresh 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung KMM466F404CS2-L is a 4Mx64bits Dynamic RAM high density memory module. The • Part Identification


    Original     		PDF KMM466F404CS2-L KMM466F404CS2-L 4Mx16, 4Mx64bits cycles/128ms, 4Mx16bits 400mil

    M466F0804DT1-L

    Abstract: No abstract text available
    Text: DRAM MODULE M466F0804DT1-L M466F0804DT1-L EDO Mode 8M x 64 DRAM SODIMM Using 4Mx16, 4K Refresh 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung M466F0804DT1-L is a 8Mx64bits Dynamic RAM high density memory module. The • Part Identification


    Original     		PDF M466F0804DT1-L M466F0804DT1-L 4Mx16, 8Mx64bits cycles/128ms, 4Mx16bits 400mil

    K4E641612D-T

    Abstract: No abstract text available
    Text: M372F0805DT0-C DRAM MODULE M372F0805DT0-C EDO Mode 8M x 72 DRAM DIMM with ECC Using 4Mx16 & 4Mx4, 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung M372F0805DT0-C is a 8Mx72bits Dynamic RAM high density memory module. The Samsung M372F0805DT0-C consists of eight


    Original     		PDF M372F0805DT0-C M372F0805DT0-C 4Mx16 8Mx72bits 4Mx16bits 400mil 168-pin K4E641612D-T

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM374F804CS1 KMM374F804CS1 Fast EDO Mode without buffer 8M x 72 DRAM DIMM with ECC Using 4Mx16 & 4Mx4, 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM374F804CS1 is a 8Mx72bits Dynamic RAM high density memory module. The Samsung KMM374F804CS1 consists of eight CMOS 4Mx16bits


    Original     		PDF KMM374F804CS1 KMM374F804CS1 4Mx16 8Mx72bits 4Mx16bits 400mil 300mil 168-pin

    4MX16

    Abstract: No abstract text available
    Text: 64MB 144 PIN SO-DIMM With 4Mx16 EDO DRAM 3.3VOLT TS8MES64V6EZ Pin Identification Description The TS8MES64V6EZ is an 8M x 64-bit dynamic Symbol Function RAM high-density memory module. It consists of A0~A11 Address inputs 8pcs of 4Mx16 DRAMs assembled on the printed


    Original     		PDF 4Mx16 TS8MES64V6EZ TS8MES64V6EZ 64-bit TS8MES64V6EV

    KMM5324004BSW

    Abstract: KMM5324004BSWG
    Text: DRAM MODULE KMM5324004BSW/BSWG KMM5324004BSW/BSWG EDO Mode 4M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5324004B is a 4Mx32bits Dynamic RAM high density memory module. The Samsung KMM5324004B consists of two CMOS 4Mx16bits DRAMs in TSOP packages


    Original     		PDF KMM5324004BSW/BSWG KMM5324004BSW/BSWG 4Mx16, KMM5324004B 4Mx32bits KMM5324004B 4Mx16bits 72-pin KMM5324004BSW KMM5324004BSWG

    Untitled

    Abstract: No abstract text available
    Text: September 1996 Revision 1.0 FUJITSU DATA SHEET - EDC4U V644 2/4 -(60/70)(J/T)G-S 32MByte (4Mx 64) CMOS EDO DRAM Module -3.3V General Description The EDG4UV644(2/4)-(60/70)(J/T)G-S is a high performance, EDO (Extended Data Out) 32-megabyte dynamic RAM module


    OCR Scan     		PDF 32MByte EDG4UV644 32-megabyte 168-pins, MB81V1

    KM416C4104AS

    Abstract: kmm5328004asw km416c4104a
    Text: Preliminary KMM5328004ASW/ASWG DRAM MODULE KMM5328004ASW/ASWG EDO Mode 8M X 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5328004A is a 8Mx32bits Dynamic RAM - Part Identification high density memory module. The Samsung KMM5328004A


    OCR Scan     		PDF KMM5328004ASW/ASWG 4Mx16, KMM5328004A 8Mx32bits 4Mx16bits 72-pin KMM5328004ASW/ASWG KMM5328004ASW KM416C4104AS km416c4104a

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM374F804BS KMM374F804BS Fast EDO Mode without buffer 8M X 72 DRAM DIMM with ECC Using 4Mx16 & 4Mx4, 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM374F804BS is a 8Mx72bits Dynamic RAM high density memory module. The Samsung KMM374F804BS


    OCR Scan     		PDF KMM374F804BS KMM374F804BS 4Mx16 8Mx72bits 4Mx16bits 400mil 300mil 168-pin

    KMM5324

    Abstract: No abstract text available
    Text: Preliminary DRAM MODULE KMM5324004ASW/ASWG KMM5324004ASW/ASWG EDO Mode 4M X 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KM M 5324004A is a 4Mx32bits Dynamic RAM Part Identification high density memory module. The Samsung KM M 5324004A


    OCR Scan     		PDF KMM5324004ASW/ASWG 4Mx16, 324004A 4Mx32bits 4Mx16bits 72-pin KMM5324004ASW/ASWG 5324004ASW KMM5324

    KM416C4104AS

    Abstract: KM416C4104a KM44C4005BS
    Text: Preliminary KMM5364005ASW/ASWG DRAM MODULE KMM5364005ASW/ASWG EDO Mode 4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5364005A is a 4Mx36bits Dynamic RAM - Part Identification high density memory module. The Samsung KMM5364005A


    OCR Scan     		PDF KMM5364005ASW/ASWG KMM5364005ASW/ASWG 4Mx16 KMM5364005A 4Mx36bits 4Mx16bits 72-pin KMM5364005ASW KM416C4104AS KM416C4104a KM44C4005BS

    KM416V4104AS-L

    Abstract: No abstract text available
    Text: DRAM MODULE KMM332F404AS/AZ-L KMM332F404AS/AZ-L EDO Mode 4M x 32 DRAM SODIMM Using 4MX16, 4K Refresh, 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung KMM332F404A is a 8Mx32bits Dynamic RAM Part Identification high density memory module. The Samsung KMM332F404A


    OCR Scan     		PDF KMM332F404AS/AZ-L KMM332F404AS/AZ-L 4MX16, KMM332F404A 8Mx32bits 4Mx16bits 72-pin KM416V4104AS-L

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM372E404BS KMM372E404BK/BS EDO Mode 4M x 72 DRAM DIMM Using 4Mx16 & 4Mx4, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM372E404B is a 4Mx72bits Dynamic RAM high density memory module. The Samsung KMM372E404B consists of four 4Mx16bits & two 4Mx4bits CMOS DRAM in


    OCR Scan     		PDF KMM372E404BK/BS 4Mx16 KMM372E404B 4Mx72bits 4Mx16bits 400mil 168-pin KMM372E404BS

    Untitled

    Abstract: No abstract text available
    Text: Preliminary KMM466F404AS-L DRAM MODULE KMM466F404AS-L EDO Mode without buffer 4Mx64 based on 4Mx16, 4K Refresh, 3.3V, Low power/Self-Refresh G ENERAL DESCRIPTIO N FEATURES The Samsung KMM466F404AS-L is a 4M bit x 64 Dynamic RAM high density memory module. The


    OCR Scan     		PDF KMM466F404AS-L KMM466F404AS-L 4Mx64 4Mx16, 466F404AS-L cycles/128ms, 1000mil) DDBE733

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM332F804AS/AZ-L KMM332F804AS/AZ-L EDO Mode 8M x 32 DRAM SODIMM Using 4MX16, 4K Refresh, 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung KMM332F804A is a 8Mx32bits Dynamic RAM Part Identification high density memory module. The Samsung KMM332F804A


    OCR Scan     		PDF KMM332F804AS/AZ-L KMM332F804AS/AZ-L 4MX16, KMM332F804A 8Mx32bits 4Mx16bits 72-pin