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Excelics Semiconductor Inc EFC240B Electronic Component
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ComSIT USA	EFC240B		100			1 - 10 - 100 - 1000 - 10000 -	Get Quote

EFC240B Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
EFC240B		Excelics Semiconductor	10-14V low distortion GaAs power FET		Original	PDF
EFC240B-100F		Excelics Semiconductor	10-14V low distortion GaAs power FET		Original	PDF

EFC240B Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
EFC240B Abstract: No abstract text available Text: EFC240B Low Distortion GaAs Power FET FEATURES • • • • • • • 960 50 +31.0dBm TYPICAL OUTPUT POWER 8.5dB TYPICAL POWER GAIN AT 12GHz HIGH BVgd FOR 10V BIAS 0.3 X 2400 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE	Original	PDF	EFC240B 12GHz 18GHz EFC240B
EFC240B Abstract: No abstract text available Text: Excelics EFC240B PRELIMINARY DATA SHEET Low Distortion GaAs Power FET • • • • • • • +31.0dBm TYPICAL OUTPUT POWER 8.5dB TYPICAL POWER GAIN AT 12GHz HIGH BVgd FOR 10V BIAS 0.3 X 2400 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE	Original	PDF	EFC240B 12GHz 18GHz EFC240B
EFC240B-100F Abstract: No abstract text available Text: Excelics EFC240B-100F DATA SHEET Low Distortion GaAs Power FET • • • • • • • 63 Dia. P1dB 24 256 TYP. G1dB PAE PARAMETERS/TEST CONDITIONS Output Power at 1dB Compression Vds=10V, Ids=50% Idss Gain at 1dB Compression Vds=10V, Ids=50% Idss Power Added Efficiency at 1dB Compression	Original	PDF	EFC240B-100F 100mil EFC240B-100F
180MIL Abstract: No abstract text available Text: EFC240B-180F Low Distortion GaAs Power FET ISSUED 10/04/2006 FEATURES • • • • • • NON-HERMETIC 180MIL METAL FLANGE PACKAGE +31.0 dBm TYPICAL OUTPUT POWER 16.5 dB TYPICAL POWER GAIN AT 2GHz 0.3 x 2400 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION	Original	PDF	EFC240B-180F 180MIL 29dBm 175oC -65/175oC
Untitled Abstract: No abstract text available Text: EFC240B-100P Low Distortion GaAs Power FET UPDATED 10/04/2006 • • • • • • NON-HERMETIC 100MIL METAL FLANGE PACKAGE +31.0dBm TYPICAL OUTPUT POWER 8dB TYPICAL POWER GAIN AT 12GHz 0.3 X 2400 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE	Original	PDF	EFC240B-100P 100MIL 12GHz 18GHz 175oC -65/175oC
EPA080A-100P Abstract: EPA060B-70 EPA240BV EPA018A EIC7179-4 Microwave GaAs FET catalogue EMP108-P1 EPA160AV EPA120EV EPA480C Text: Summer 2009 1 Excelics SEMICONDUCTOR Excelics Semiconductor, Inc. is an integrated device manufacturing company founded in March 1995. Corporate headquarters and manufacturing are located in Silicon Valley, approximately 50 miles south of San Francisco, California.	Original	PDF
transistor C55 7B Abstract: AT90USB1286-16MU SSL8000000 transistor C55 7c EPM570T100C5 SSL800 SSL8000000E18FAE C1005C0G1H101J C1005C0G1H151J MAX6126 Text: 19-4147; Rev 1; 9/08 MAX11014 Evaluation Kit The MAX11014 evaluation kit EV kit provides a proven design to evaluate the MAX11014 automatic RF MESFET amplifier drain-current controller using an Altera complex programmable logic device (CPLD) containing the	Original	PDF	MAX11014 2000/XP/Vista MAX11014. 32-Bit MAX11014 transistor C55 7B AT90USB1286-16MU SSL8000000 transistor C55 7c EPM570T100C5 SSL800 SSL8000000E18FAE C1005C0G1H101J C1005C0G1H151J MAX6126