Optical Detector
Abstract: EG*G Heimann Optoelectronics GmbH EG*G Optoelectronics Heimann electron Detector 42 1E-18 CHV30P C1300 transistor c900 C900
Text: Lighting Imaging Telecom Sensors Channel Photomultipliers Channel Photomultipliers Overview and Specifications . P H O T O M U L T I P L I E R C P M C H A N N E L Description PerkinElmer Optoelectronics, formerly EG&G Optoelectronics, is pleased to introduce the Channel
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DS-291
Optical Detector
EG*G Heimann Optoelectronics GmbH
EG*G Optoelectronics
Heimann
electron Detector 42
1E-18
CHV30P
C1300
transistor c900
C900
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HS-DDC-H24-0003
Abstract: No abstract text available
Text: Page # : 1 of 1 Date : 22/09/98 ISSUED BY : Joan Low Poh Chee Rev Date : Index #: DEVICE NAME : EG 4764 Mechanical Data : Dimension mm e l 63 ± 1 r 101 ± 1 g d 7 ± 0.5 dia x Polarity : Without Colour Corrective Coating : Remarks: 1. Envelope material : Q1, Q2 or Q3
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1x10p7
HS-DDC-H24-0003
HS-DDC-H24-0003
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ZS 1052
Abstract: CB-480
Text: Page # : 1 of 1 Date : 07/09/98 ISSUED BY : Joan Low Poh Chee Rev Date : Index #: DEVICE NAME : EG 9902-1 Mechanical Data : Dimension mm e l 312 ± 3 r a y 392 ± 3 g 14.5 ± 0.5 (2x) 115 ± 5 (2x) m 15 ± 0.5 dia (2x) d 10 ± 1 dia x 120 ± 5 k 16 ± 0.5 dia (2x)
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HS-DDC-H24-0003
ZS 1052
CB-480
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HS-DDC-H24-0003
Abstract: No abstract text available
Text: Page # : 1 of 1 Date : 22/09/98 ISSUED BY : Joan Low Poh Chee Rev Date : Index #: DEVICE NAME : EG 3770 Mechanical Data : Dimension mm e l 68 ± 1.5 r a 117 ± 2 g 8 approx (2x) d 7 ± 0.5 dia x b 15 approx (2x) n 8 approx dia (2x) m 6 approx dia (2x) Polarity : Red dot at anode
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HS-DDC-H24-0003
HS-DDC-H24-0003
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DG3157
Abstract: INTERSIL Cross Reference Search dg403bdy DG211BDJ MAX32xx MAX333ACWP ADG201ABQ semiconductors cross reference DG442LDY DG303bdy
Text: CROSS-REFERENCE A nalog IC Pro duc ts w w w. v i s h a y. c o m I N T EG R AT E D C I R C U I T S V I S H AY I N T E R T E C H N O L O G Y, I N C . SEMICONDUCTORS RECTIFIERS Schottky single, Dual Standard, Fast, and Ultra-Fast Recovery (single, Dual) Bridge
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VMN-MS6328-0911
DG3157
INTERSIL Cross Reference Search
dg403bdy
DG211BDJ
MAX32xx
MAX333ACWP
ADG201ABQ
semiconductors cross reference
DG442LDY
DG303bdy
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SIECOR Fiber Optic cable
Abstract: No abstract text available
Text: E G & G/CANADA/OPTOELEK ^ M7E D • 3ü3DblG OGDOE^ EGzG OPTOELECTRONICS h ■ CANA C86075E& C86082E Series - n v / ' O i C86082E Series C86075E Series The EG&G series of 1300 nm LEDs are edge emitting InGaAsP
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C86075E&
C86082E
C86075E
ED-0050/12/90
SIECOR Fiber Optic cable
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Untitled
Abstract: No abstract text available
Text: C-O EG&G OPTOELECTRONICS GROUP E G S G/HEIMANN OPTOELE tSE D • t-ttSfVIMIHM -otoeiectrcmcs 1003350 0000073 b35 ■ LAE - LARGE AREA ELECTRONICS POSITION SENSING DETECTORS - PSD Description The one- and tw o dimensionai Position Sensing Detectors PSD in Amorphous
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T0033H0
0Q0D075
LP20100
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Photodiode vactec
Abstract: S1723-04 "CT scan" VTH209XDS QQQ112M VTH2090 VTH2091
Text: 3D3übüT SbE ÜG Ü1 1 23 IVCT SSG J^EG&G VACTEC T ^ l- 5 3 VTH209XDS Rev. E LARGE AREA PIN PHOTODIODE VTH2090, 2091 OPTOELECTRONICS S1723-04, 06 INDUSTRY EQUIVALENT E G & G VACTEC -PRODUCT DESCRIPTIO N This PIN photodiode consists of a chip with a
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VTH209XDS
VTH2090,
S1723-04,
Photodiode vactec
S1723-04
"CT scan"
QQQ112M
VTH2090
VTH2091
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SIECOR Fiber Optic cable
Abstract: Siecor 62.5
Text: E G & G/CANADA/OPTOELEK ^ *4?E I> • 3G3GblD 00002=17 EB kO OPTOELECTRONICS C86081E Series I ■ H The EG&G series of 1300 nm LEDs are edge emitting InGaAsP diodes made by vapor phase epitaxy to give high optical power at 65°C. The design utilizes advanced geometries to prevent
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C86081E
C30616E,
C30617E
C30986E
ED-0051/12/90
SIECOR Fiber Optic cable
Siecor 62.5
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Untitled
Abstract: No abstract text available
Text: 5bE 3030^0^ D 0001113 n EG kG v a c t e c bQl G 8, G - 4 1-55 VTB9610DS Rev, B PHOTODIODE ARRAY 24 ELEMENT VTB9610 OPTOELECTRONICS E IVCT VACTEC PRODUCT DESCRIPTION FEATURES This is a 24 element photodiode array specifically designed for use in the photovoltaic mode. The anode of each
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VTB9610DS
VTB9610
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MANI3110C
Abstract: MANI3410C MANI3210C
Text: [*Q OPTOELECTRONICS NUMERIC S EG M EN TE D DISPLAYS 0 .3 ” S in g le D ig it D is p la y 1 3 .2 D e g r e e S e a tin g P la te Wave 13.0 - " 13.2P _L L ttttt n- 300 .53! (? 62> (13.5) Part length Segm ent F a ce Num ber D escription \(nm) C olor C o lo r
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MANI3110C
MANI3210C
MANI3410C
MSD314C
MSD315C
MSD344C
MSD345C
MSD394C
MSD395C
MANI3110C
MANI3410C
MANI3210C
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SIECOR Fiber Optic cable
Abstract: EG*G Optoelectronics 2sa 1300 equivalent c30617e Siecor C860XXE-12 C30654 C30617 Siecor 62.5 SIECOR Fiber Optics
Text: E G & 6 /CANADA/ OPTOELEK 47E » • 303DblG 00002=13 h ■ E O S iG CANA C86075E & OPTOELECTRONICS C86082E Series T - v t - e i C86082E Series C86075E Series HI“ - Dual-in-Line Package with Single or
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303Dbl0
C86075E
C86082E
C86075E
C30616E,
C30617E
C30654
ED-0050/12/90
SIECOR Fiber Optic cable
EG*G Optoelectronics
2sa 1300 equivalent
Siecor
C860XXE-12
C30617
Siecor 62.5
SIECOR Fiber Optics
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SIECOR Fiber Optic cable
Abstract: siecor C30617E EG*G Optoelectronics Siecor 62.5 C30986E C86081E-13 C86081E-14 1300 nm LEDs SIECOR Fiber Optics
Text: E fi 8. G / C A N A D A / O P T O E L E K 4?E T> 3030bl0 OODOET? 3 I CANA t-fl-O l OPTOELECTRONICS C86081E Series Our 100% quality screening tests include a stabilization bake at 85°C for a minimum of 10 hours, burn-in and thermal shock: 5 cycles, -20 to +70°C.
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3030bl0
ff-07
C86081E
C30616E
C30617E
C30986E
ED-0051/12/90
SIECOR Fiber Optic cable
siecor
EG*G Optoelectronics
Siecor 62.5
C86081E-13
C86081E-14
1300 nm LEDs
SIECOR Fiber Optics
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Untitled
Abstract: No abstract text available
Text: E G & G/CANADA/OPTOELEK Il 47E D • 3D3DblO ■_< — GODDPòfl 2 ■ CANA 1550nm High Power Pulsed Laser C Ij K IJ OPTOELECTRONICS C86091E T-y -cs ■ ■ ■ ■ H T he C 86091E is a high pow er single elem ent pulsed laser diode. W avelength is centered at 1550 nm to take advantage
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1550nm
C86091E
86091E
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EG*G Optoelectronics
Abstract: C30724 C30724P EG&G VS289 MIL-Q-9858A Si apd photodiode 800 nm EG&G optoelectronics apd bias 200v eg&g HUV-1100
Text: J^E G S G CANADA AN OPTOELECTRONICS GROUP COMPANY SÌ APD Package 04-22-97) C30724P Features: 3.25/3.17 ( 0 . 1 2 8 ) / ( 0 .125) 3_ 1 .0 2 (0.040) CATHODE cxzzr 3 t = I J . 2.54 ( 0 . 100 ) ANODE 0 .4 6 -c
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C30724P
900nm
C30724P
EG*G Optoelectronics
C30724
EG&G
VS289
MIL-Q-9858A
Si apd photodiode 800 nm
EG&G optoelectronics
apd bias 200v
eg&g HUV-1100
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OP845
Abstract: 2SC141 OP843 OP130 2SC 141 AN 0P845 0P844 0P842
Text: OPTEK TECHNOLOGY INC ObE D | bT^flSfiO OOOOiat =1 | g Optoelectronics Division TRW Electronic Components Group Product Bulletin 6144 January 1985 U m W NPiy Silicon Phototransistors Types 0P841, 0P842, 0P843, QP844, 0P845 Features i • Collector currents are binned to minimums only
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0P841,
0P842,
0P843,
QP844,
0P845
0P841
0P845
X-875
OP845
2SC141
OP843
OP130
2SC 141 AN
0P844
0P842
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0P604
Abstract: OP601 OP64 OP600 OP640
Text: OPTEK TECHNOLOGY INC OLE D | LTTBSflO DD0017S T | Optoelectronics- Division T R W Electronic Com ponents Group T Product Bulletin 5131 January 1965 t R m w - m -io i NPN Silicon Phototransistors Types OP600 0P604, QP640-OP644 Features • Miniature hermetically sealed package
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C00017E
OP600
0P604,
QP640-OP644
boards/11
0P604
OP640
0P644
X-875
OP601
OP64
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Untitled
Abstract: No abstract text available
Text: OPTEK TECHNOLOGY INC ObE D | L71flSflQ 0000146 1 | Optoelectronics Division - b T RW Electronic Components Group Product Bulletin 5097 January 1965 'R Y w NPN Silicon Phototransistors Types 0P5Q1, 0P5Q1SLD, 0P501SLC, 0P5Q1SLB, 0P5Q1SLA Features • 0 .1 0 0 " 12.54 mm} lead spacing
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L71flSflQ
0P501SLC,
OP501
501SLD
OP500
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Untitled
Abstract: No abstract text available
Text: STANDARD LAMP OPTOELECTRONICS lighting:theway VAOL-3HAE4 Feature Package D im ension • Low Power Consumption ■ I.C. compatible .1 18 “ 3.0 A pplications ■ ■ ■ ■ Commercial Outdoor Sign Board Front Panel Indicator Dot-Matrix Module LED Bulb D escription
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Untitled
Abstract: No abstract text available
Text: 0603 SMD TYPE LED OPTOELECTRONICS lighting:theway VAOL-S6SB4 Features • Fit automatic placement equipment. • Fit Compatible with infrared and vapor phase reflow solder process. • Pb-free. • RoHS compliant. Descriptions • • • • • For higher packing density .
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Untitled
Abstract: No abstract text available
Text: SUPERBRIGHT LED LAMP OPTOELECTRONICS lighting:theway VAOL-3GSBY4 Package Dimension Feature • ■ ■ Low Power Consumption High Intensity I.C. compatible .209 5.3 ' Applications ■ ■ ■ ■ 0.1 Commercial Outdoor Sign Board Front Panel Indicator Dot-Matrix Module
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Untitled
Abstract: No abstract text available
Text: STANDARD OPTOELECTRONICS lighting:theway LAMP VAOL-3GCE4 Feature Package Dimension • Low Power Consumption ■ I.C. compatible Applications ■ ■ ■ ■ Commercial Outdoor Sign Board Front Panel Indicator Dot-Matrix Module LED Bulb Description ■ These LEDs are Based on GaAsP/GaP
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Untitled
Abstract: No abstract text available
Text: TIED56 Avalanche Photodiode Texas Optoelectronics, Inc. OPTIMIZED FOR HIGH-SPEED DETECTION OF NEAR-INFRARED RADIANT ENERGY DESCRIPTION FEATURES The TIED56 is a high-speed, high-resistivity photodiode. It is designed to operate in the reverse-voltage avalanche region just below the
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TIED56
TIED56
Equi1218)
9L53PL375)
5J7I023S
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PDF
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Untitled
Abstract: No abstract text available
Text: SUPERBRIGHT LED LAMP OPTOELECTRONICS lighting:theway VA0L-3LSBY1 Feature • ■ ■ Package Dimension Low Power Consumption High Intensity I.C. compatible Applications ■ ■ ■ ■ Commercial Outdoor Sign Board Front Panel Indicator Dot-Matrix Module LED Bulb
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