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    2.2GHz

    Abstract: EGN21C160I2D GaN amplifier
    Text: EGN21C160I2D GaN-HEMT 160W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 52.5dBm typ. @ Psat ・High Efficiency: 68%(typ.) @ Psat ・Power Gain : 18dB(typ.) @ f=2.14GHz ・Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater


    Original     		PDF EGN21C160I2D 14GHz 600mA 135GHz, 145GHz, 2.2GHz EGN21C160I2D GaN amplifier

    Untitled

    Abstract: No abstract text available
    Text: EGN21C160I2D GaN-HEMT 160W High Voltage - High Power GaN-HEMT FEATURES High Voltage Operation : VDS=50V High Power : 52.5dBm typ. @ Psat High Efficiency: 68%(typ.) @ Psat Power Gain : 18dB(typ.) @ f=2.14GHz Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater


    Original     		PDF EGN21C160I2D 14GHz 25deg /-10MHz

    Untitled

    Abstract: No abstract text available
    Text: EGN21C160I2D GaN-HEMT 160W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 52.5dBm typ. @ Psat ・High Efficiency: 68%(typ.) @ Psat ・Power Gain : 18dB(typ.) @ f=2.14GHz ・Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater


    Original     		PDF EGN21C160I2D 14GHz 600mA 135GHz, 145GHz,