EKZE101
Abstract: No abstract text available
Text: EGN21C210I2D GaN-HEMT 210W High Voltage - High Power GaN-HEMT FEATURES -High Voltage Operation : VDS=50V -High Power : 53.0dBm typ. @ Psat -High Efficiency: 68%(typ.) @ Psat -Power Gain : 18dB(typ.) @ f=2.14GHz -Proven Reliability DESCRIPTION Eudyna's GaN-HEMT offers high efficiency, ease of matching, greater
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14GHz
EGN21C210I2D
/-10MHz
48dBm
/-10MHz
EKZE101
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Untitled
Abstract: No abstract text available
Text: EGN21C210I2D High Voltage - High Power GaN-HEMT FEATURES -High Voltage Operation : VDS=50V -High Power : 53.0dBm typ. @ Psat -High Efficiency: 68%(typ.) @ Psat -Power Gain : 18dB(typ.) @ f=2.14GHz -Proven Reliability DESCRIPTION SEI's GaN-HEMT offers high efficiency, ease of matching, greater
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EGN21C210I2D
14GHz
14GHz
25deg
/-10MHz
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mar 827
Abstract: 210w AF Power Amplifier CS3376C ATC100B JESD22-A114 TZY2Z010A001 MURATA GRM55ER72A475K
Text: EGN21C210I2D GaN-HEMT 210W High Voltage - High Power GaN-HEMT FEATURES -High Voltage Operation : VDS=50V -High Power : 53.0dBm typ. @ Psat -High Efficiency: 68%(typ.) @ Psat -Power Gain : 18dB(typ.) @ f=2.14GHz -Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater
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EGN21C210I2D
14GHz
14GHz
/-10MHz
mar 827
210w AF Power Amplifier
CS3376C
ATC100B
JESD22-A114
TZY2Z010A001
MURATA GRM55ER72A475K
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