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    EKZE101

    Abstract: No abstract text available
    Text: EGN21C210I2D GaN-HEMT 210W High Voltage - High Power GaN-HEMT FEATURES -High Voltage Operation : VDS=50V -High Power : 53.0dBm typ. @ Psat -High Efficiency: 68%(typ.) @ Psat -Power Gain : 18dB(typ.) @ f=2.14GHz -Proven Reliability DESCRIPTION Eudyna's GaN-HEMT offers high efficiency, ease of matching, greater


    Original
    14GHz EGN21C210I2D /-10MHz 48dBm /-10MHz EKZE101 PDF

    Untitled

    Abstract: No abstract text available
    Text: EGN21C210I2D High Voltage - High Power GaN-HEMT FEATURES -High Voltage Operation : VDS=50V -High Power : 53.0dBm typ. @ Psat -High Efficiency: 68%(typ.) @ Psat -Power Gain : 18dB(typ.) @ f=2.14GHz -Proven Reliability DESCRIPTION SEI's GaN-HEMT offers high efficiency, ease of matching, greater


    Original
    EGN21C210I2D 14GHz 14GHz 25deg /-10MHz PDF

    mar 827

    Abstract: 210w AF Power Amplifier CS3376C ATC100B JESD22-A114 TZY2Z010A001 MURATA GRM55ER72A475K
    Text: EGN21C210I2D GaN-HEMT 210W High Voltage - High Power GaN-HEMT FEATURES -High Voltage Operation : VDS=50V -High Power : 53.0dBm typ. @ Psat -High Efficiency: 68%(typ.) @ Psat -Power Gain : 18dB(typ.) @ f=2.14GHz -Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater


    Original
    EGN21C210I2D 14GHz 14GHz /-10MHz mar 827 210w AF Power Amplifier CS3376C ATC100B JESD22-A114 TZY2Z010A001 MURATA GRM55ER72A475K PDF