Untitled
Abstract: No abstract text available
Text: Ultra Low Capacitance 4 -Line ESD Protection Array Product Description Features The GSE6V8UW is 4-channel very low capacitance ESD transient voltage suppressor which provides a very high level of protection for sensitive electronic components that may be subjected to electrostatic discharge. It is
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OT-363
Lane11
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Digital transistors Features 1 Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors see equivalent circuit). 2)The bias resistors consist of thinfilm resistors with complete isolation to allow negative biasing of the
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LDTB114ELT1G
LDTB114ELT1G
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Digital transistors Features 1 Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors see equivalent circuit). 2)The bias resistors consist of thinfilm resistors with complete isolation to allow negative biasing of the
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LDTD123ELT1G
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MSB709
Abstract: SC-75 SOT-353 b1
Text: MSB709 PNP General Purpose Transistors 3 P b Lead Pb -Free 1 2 SOT-23 MAXIMUM RATINGS(Ta=25°C) Symbol Value Unit Collector-Emitter Voltage VCEO -45 V Collector-Base Voltage VCBO -60 V Emitter-Base Voltage VEBO -7.0 V Collector Current - Continuous IC -100
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MSB709
OT-23
MSB709
18-Sep-06
SC-75
SOT-353 b1
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sot363 voltage controller
Abstract: WE05-2RT3 100watts ups circuit diagram Wayon WE05 SOT-363 A1 marking codes
Text: Document: W0301121, Rev: A WE05-2RT3 Transient Voltage Suppressor Features 100Watts Peak Power per Line tp = 8/20 s Protects two I/O lines Low operating voltage: 5V Ultra Low capacitance(<1.0pF) for high-speed interfaces Solid-state technology
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W0301121,
WE05-2RT3
100Watts
8/20s)
EN61000-4)
5/50ns)
OT-363
sot363 voltage controller
WE05-2RT3
100watts ups circuit diagram
Wayon
WE05
SOT-363 A1 marking codes
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Medium Power Transistor 32V, 0.8A L2SD1781KXLT1G L2SD1781KXLT1G 3 FFeatures 1) Very low VCE(sat). VCE(sat) t 0.4 V (Typ.) (IC / IB = 500mA / 50mA) 2) High current capacity in compact package. 3) Complements the L2SB1197KXLT1G 1
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L2SD1781KXLT1G
500mA
L2SB1197KXLT1G
OT-23
/TO-236AB
L2SD1781KQLT1G
L2SD1781KQLT3G
L2SD1781KRLT1G
L2SD1781KRLT3G
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MSD601
Abstract: Marking yr sot-23 Marking c0 SC-75 sot-23 Marking yr EIA-481 SOT363 SOT-353 b1
Text: MSD601 NPN General Purpose Transistors 3 P b Lead Pb -Free 1 2 SOT-23 MAXIMUM RATINGS(Ta=25°C) Symbol Value Unit Collector-Emitter Voltage VCEO 50 V Collector-Base Voltage VCBO 60 V Emitter-Base Voltage VEBO 7.0 V Collector Current - Continuous IC 100 mA
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MSD601
OT-23
18-Sep-06
MSD601
Marking yr
sot-23 Marking c0
SC-75
sot-23 Marking yr
EIA-481 SOT363
SOT-353 b1
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier Transistor L2SC3837LT1G z Features 1.High transition frequency. Typ.fT=1.5GHz 2.Small rbb`Cc and high gain.(Typ.6ps) 3 3.Small NF. 4. Pb-Free Package is Available. 1 2 MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
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L2SC3837LT1G
L2SC3837LT1G
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. SCHOTTKY BARRIER DIODE LRB521S-30T1 zApplictions Low current rectification and high speed switching zFeatures 1 Extremelysmall surface mounting type. SC-79/SOD523 IO=200mA guaranteed despite the size. Low VF.(V F=0.40V Typ. At 200mA)
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LRB521S-30T1
SC-79/SOD523)
200mA
200mA)
OD523/SC-79
LRB521S-30T1
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TRANSISTOR SMD MARKING CODE A45
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. PNP General Purpose Amplifier Transistor Surface Mount LMSB709LT1G FEATURE ƽSmall plastic SMD package. 3 ƽGeneral purpose amplification. ƽPb-Free Package is available. 2 DEVICE MARKING AND ORDERING INFORMATION 1 Device LMSB709LT1G
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LMSB709LT1G
LMSB709LT3G
3000/Tape
10000/Tape
OT-23
TRANSISTOR SMD MARKING CODE A45
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Band Switching Diode z Applications L1SS356T1G High frequency switching z Features 1 Small surface mounting type. 2) High reliability. 1 3) Pb-Free Package is Available. z Construction Silicon epitaxial planar 2 1 CATHODE SOD– 323
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L1SS356T1G
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier Transistor Pb-Free package is available L2SC4083PWT1G 3 COLLECTOR z 3 1 BASE 1 2 EMITTER 2 SC-70/SOT-323 Absolute maximum ratings Ta=25 oC Symbol VCBO VCEO Parameter Collector-base voltage Collector-emitter voltage
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L2SC4083PWT1G
SC-70/SOT-323
L2SC4083PWT1G
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Surface Mount Schotty Diode z Applications LRB501V-40T1G Low current rectification z Features 1 1 Small surface mounting type. 2) High reliability. 3) Pb-Free package is available. 2 z Construction SOD-323 Silicon epitaxial planar
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LRB501V-40T1G
OD-323
3000/Tape
LRB501V-40T3G
10000/Tape
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ahr 49 transistor
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Low Frequency Transistor L2SB1197KXLT1G PNP Silicon 3 FEATURE ƽHigh current capacity in compact package. IC = í0.8A. 1 ƽEpitaxial planar type. 2 ƽNPN complement: L2SD1781K ƽPb-Free Package is available. SOT– 23 TO–236AB
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L2SB1197KXLT1G
L2SD1781K
236AB)
L2SB1197KQLT1G
3000/Tape
L2SB1197KQLT3G
10000/Tape
L2SB1197KRLT1G
L2SB1197KRLT3G
ahr 49 transistor
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Schottky barrier diode LRB551V-30T1GG LRB551V-30T1G 1 zApplications High-frequency rectification Switching regulators 2 zFeatures 1 Small surface mounting type. CASE 477– 02, STYLE 1 SOD– 323 2) Ultra low VF VF=0.45V Typ. at 0.5A)
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LRB551V-30T1GG
LRB551V-30T1G
3000/Tape
LRB551V-30T3G
10000/Tape
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marking 13Q SOT-23
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L9013XLT1G FEATURE Pb-Free Package is available. 3 Ordering Information 1 Device Package Shipping L9013XLT1G SOT-23 3000/Tape&Reel L9013XLT3G SOT-23 10000/Tape&Reel 2 SOT-23 TO-236AB MAXIMUM RATINGS
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L9013XLT1G
OT-23
3000/Tape
L9013XLT3G
10000/Tape
O-236AB)
marking 13Q SOT-23
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476A diode
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Common Cathode Silicon Dual Switching Diode This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC–89 package which is designed for low
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LDAN222T1
SC-89
476A diode
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Silicon Pin Diode LMVL3401T1G This device is designed primarily for VHF band switching applications but is also suitable for use in general–purpose switching circuits. Supplied in a Surface Mount package. • Rugged PIN Structure Coupled with Wirebond Construction
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LMVL3401T1G
OD-323
3000/Tape
LMVL3401T3G
10000/Tape
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LBA277AT1
Abstract: LBA277AT3 SC-75 sod523 dimension marking pl SOD-323 diode T3 Marking SOT-353 marking code b1 512 SOT23-8
Text: LESHAN RADIO COMPANY, LTD. Band Switching Diode z Applications LBA277AT1 High frequency switching z Features 1 Small surface mounting type. 2) High reliability. 1 3) Pb-Free Package is Available. z Construction Silicon epitaxial planar 2 SOD–523 1 CATHODE
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LBA277AT1
Capac330mm
360mm
LBA277AT1
LBA277AT3
SC-75
sod523 dimension
marking pl SOD-323
diode T3 Marking
SOT-353 marking code b1
512 SOT23-8
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Surface Mount Schotty Diode LRB500V-40T1G zApplications Low current rectification 1 zFeatures 1 Small surface mounting type. 2) Low IR. IR=70nA Typ.) 3) High reliability. 4) Pb-Free package is available. 2 SOD-323 zConstruction
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LRB500V-40T1G
OD-323
3000/Tape
LRB500V-40T3G
10000/Tape
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. SCHOTTKY BARRIER DIODE LRB521S-30T1 zApplictions Low current rectification and high speed switching zFeatures 1 Extremelysmall surface mounting type. SC-79/SOD523 IO=200mA guaranteed despite the size. Low VF.(V F=0.40V Typ. At 200mA)
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LRB521S-30T1
SC-79/SOD523)
200mA
200mA)
OD523/SC-79
LRB521S-30T1
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SOT 363 marking CODE 039
Abstract: LRB520S-30T1 LRB520S-30T3 marking code 4 SC-79 SOT-353 marking code b1
Text: LESHAN RADIO COMPANY, LTD. SCHOTTKY BARRIER DIODE LRB520S-30T1 zApplications Low current rectification and high speed switching zFeatures 1 Extremelysmall surface mounting type. SC-79/SOD523 Low IR.(IR=0.1mA Typ.) High reliability. 2 Pb-Free package is available.
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LRB520S-30T1
SC-79/SOD523)
OD523/SC-79
LRB520S-30T3
3000/Tape
10000/Tape
1330mm
360mm
SOT 363 marking CODE 039
LRB520S-30T1
LRB520S-30T3
marking code 4 SC-79
SOT-353 marking code b1
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Silicon PNP Epitaxial Planer Transistor L4401DW1T1G z Pb-Free Package is Available. MAXIMUM RATINGS Symbol Ratings Unit Collector-Emitter Voltage Parameter VCEO -50 V Collector-Base Voltage VCBO -60 V Emitter-Base Voltage VEBO -6
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L4401DW1T1G
L4401DW1T1G
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EIA 481 SOT363
Abstract: EIA-481 SOT363
Text: G en era l v 7 S e m ic o n d u c t o r GMF05C TVS Diode Array For ESD & Latch-Up Protection SOT-363 Pin Configuration Top View R f*l. mUTB Mounting Pad Layout Features •Transient protection for data lines as per IEC 1000-4-2 (ESD) 15kV (air), 8kV (contact)
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GMF05C
OT-363
OT-363
5/50ns)
8/20us)
EIA 481 SOT363
EIA-481 SOT363
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