TSM 30 CK 1200
Abstract: I25237
Text: Bulletin I25237 10/06 ST303CLPbF SERIES INVERTER GRADE THYRISTORS Hockey Puk Version Features Metal case with ceramic insulator International standard case TO-200AC B-PUK All diffused design Center amplifying gate Guaranteed high dV/dt 515A Guaranteed high dI/dt
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I25237
ST303CLPbF
O-200AC
ST303C.
TSM 30 CK 1200
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T303C
Abstract: SW2800
Text: Bulletin I25236 10/06 ST303CPbF SERIES INVERTER GRADE THYRISTORS Puk Version Features Metal case with ceramic insulator International standard case TO-200AB E-PUK All diffused design Center amplifying gate Guaranteed high dV/dt Guaranteed high dI/dt 620A
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I25236
ST303CPbF
O-200AB
ST303C.
T303C
SW2800
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Irf 1540 N
Abstract: RC snubber thyristor design Irf 1540 G ST303C.C Series 200AB ST303C
Text: Bulletin I25172 rev. A 05/94 ST303C.C SERIES INVERTER GRADE THYRISTORS Puk Version Features Metal case with ceramic insulator International standard case TO-200AB E-PUK 620A All diffused design Center amplifying gate Guaranteed high dV/dt Guaranteed high dI/dt
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I25172
ST303C.
O-200AB
10ohm
10ohm
Irf 1540 N
RC snubber thyristor design
Irf 1540 G
ST303C.C Series
200AB
ST303C
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ST303S
Abstract: W08K
Text: Bulletin I25173 rev. B 03/94 ST303S SERIES Stud Version INVERTER GRADE THYRISTORS Features 300A All diffused design Center amplifying gate Guaranteed high dv/dt Guaranteed high di/dt High surge current capability Low thermal impedance High speed performance
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I25173
ST303S
ST303S
O-209AE
10ohms;
10ohms
W08K
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ST083S
Abstract: CS 15 thyristor EK 1E1
Text: Bulletin I25185 rev. B 03/94 ST083S SERIES Stud Version INVERTER GRADE THYRISTORS Features 85A All diffused design Center amplifying gate Guaranteed high dv/dt Guaranteed high di/dt High surge current capability Low thermal impedance High speed performance
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I25185
ST083S
ST083S
O-209AC
10ohms;
10ohms
CS 15 thyristor
EK 1E1
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AL 2450 dv
Abstract: ST083S thyristor cp 04 95
Text: Previous Datasheet Index Next Data Sheet Bulletin I25185/B ST083S SERIES Stud Version INVERTER GRADE THYRISTORS Features 85A All diffused design Center amplifying gate Guaranteed high dv/dt Guaranteed high di/dt High surge current capability Low thermal impedance
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I25185/B
ST083S
ST083S
10ohm
T083S
AL 2450 dv
thyristor cp 04 95
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Irf 1540 G
Abstract: Irf 1540 N RC snubber thyristor design ST303C
Text: Bulletin I25186 rev. A 05/94 ST303C.L SERIES INVERTER GRADE THYRISTORS Hockey Puk Version Features Metal case with ceramic insulator International standard case TO-200AC B-PUK 515A All diffused design Center amplifying gate Guaranteed high dV/dt Guaranteed high dI/dt
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I25186
ST303C.
O-200AC
ST303C
10ohm
Irf 1540 G
Irf 1540 N
RC snubber thyristor design
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303CL
Abstract: modified sine wave power inverter 303C ST303C 1e4d
Text: ST303CLPbF Series Vishay High Power Products Inverter Grade Thyristors Hockey PUK Version , 515 A FEATURES • • • • • • • • • • • TO-200AC (B-PUK) PRODUCT SUMMARY IT(AV) Metal case with ceramic insulator All diffused design Center amplifying gate
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ST303CLPbF
O-200AC
18-Jul-08
303CL
modified sine wave power inverter
303C
ST303C
1e4d
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Untitled
Abstract: No abstract text available
Text: PD - 95229B IRGB6B60KDPbF IRGS6B60KDPbF IRGSL6B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10 s Short Circuit Capability. • Square RBSOA.
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95229B
IRGB6B60KDPbF
IRGS6B60KDPbF
IRGSL6B60KDPbF
O-220AB
O-262
IRGB6B60KDPbF
IRGS6B60KDPbF
O-220AB
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IRF530S
Abstract: IRGB6B60KD IRGS6B60KD IRGSL6B60KD C-150
Text: PD - 94381E IRGB6B60KD IRGS6B60KD IRGSL6B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
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94381E
IRGB6B60KD
IRGS6B60KD
IRGSL6B60KD
O-220AB
O-262
AN-994.
IRF530S
IRGB6B60KD
IRGS6B60KD
IRGSL6B60KD
C-150
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303CL
Abstract: 60598-1 I25237 TSM 30 CK 1200
Text: Bulletin I25237 10/06 ST303CLPbF SERIES INVERTER GRADE THYRISTORS Hockey Puk Version Features Metal case with ceramic insulator International standard case TO-200AC B-PUK All diffused design Center amplifying gate Guaranteed high dV/dt 515A Guaranteed high dI/dt
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I25237
ST303CLPbF
O-200AC
ST303C.
12-Mar-07
303CL
60598-1
TSM 30 CK 1200
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Untitled
Abstract: No abstract text available
Text: PD - 95229B IRGB6B60KDPbF IRGS6B60KDPbF IRGSL6B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10 s Short Circuit Capability. • Square RBSOA.
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95229B
IRGB6B60KDPbF
IRGS6B60KDPbF
IRGSL6B60KDPbF
O-220AB
O-262
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Untitled
Abstract: No abstract text available
Text: ST303CLPbF Series Vishay High Power Products Inverter Grade Thyristors Hockey PUK Version , 515 A FEATURES • • • • • • • • • • • TO-200AC (B-PUK) PRODUCT SUMMARY IT(AV) Metal case with ceramic insulator All diffused design Center amplifying gate
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ST303CLPbF
O-200AC
795any
18-Jul-08
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AN-994
Abstract: C-150 IRF530S IRGS6B60KD IRGSL6B60KD
Text: PD - 95229 IRGB6B60KDPbF IRGS6B60KD IRGSL6B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
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IRGB6B60KDPbF
IRGS6B60KD
IRGSL6B60KD
O-220
O-220AB
O-262
IRGB6B60KDPbF
IRGS6B60KD
AN-994.
AN-994
C-150
IRF530S
IRGSL6B60KD
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C-150
Abstract: IRF530S IRGB6B60KD IRGS6B60KD IRGSL6B60KD transistor* igbt 70A 300 V
Text: PD - 94381E IRGB6B60KD IRGS6B60KD IRGSL6B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
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94381E
IRGB6B60KD
IRGS6B60KD
IRGSL6B60KD
O-220AB
O-262
AN-994.
C-150
IRF530S
IRGB6B60KD
IRGS6B60KD
IRGSL6B60KD
transistor* igbt 70A 300 V
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Untitled
Abstract: No abstract text available
Text: PD - 95229C IRGB6B60KDPbF IRGS6B60KDPbF IRGSL6B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10 s Short Circuit Capability. • Square RBSOA.
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95229C
IRGB6B60KDPbF
IRGS6B60KDPbF
IRGSL6B60KDPbF
O-220AB
O-262
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A12Q
Abstract: No abstract text available
Text: PD - 95229B IRGB6B60KDPbF IRGS6B60KDPbF IRGSL6B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10 s Short Circuit Capability. • Square RBSOA.
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95229B
IRGB6B60KDPbF
IRGS6B60KDPbF
IRGSL6B60KDPbF
O-220AB
O-262
A12Q
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Untitled
Abstract: No abstract text available
Text: PD - 94381E IRGB6B60KD IRGS6B60KD IRGSL6B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
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94381E
IRGB6B60KD
IRGS6B60KD
IRGSL6B60KD
O-220AB
O-262
AN-994.
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IRGB6B60KDPBF
Abstract: AN-994 C-150 IRF530S IRGB6B60KD IRGS6B60KD IRGSL6B60KD IRF53
Text: PD - 95229A IRGB6B60KDPbF IRGS6B60KDPbF IRGSL6B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA.
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5229A
IRGB6B60KDPbF
IRGS6B60KDPbF
IRGSL6B60KDPbF
O-220AB
IRGB6B60KD
O-262
IRGS6B60KD
IRGSL6B60KD
AN-994.
IRGB6B60KDPBF
AN-994
C-150
IRF530S
IRGB6B60KD
IRGSL6B60KD
IRF53
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E78996 scr
Abstract: p402w
Text: • International Ek>r]Rectifier 4Ô5S4SE GDlbS3T 'ÎÔT ■ INR INTERNATIONAL RECTIFIER bSE » SERIES P400 PASSIVATED ASSEMBLED CIRCUIT ELEMENTS Features ■ Glass passivated junctions for greater reliability ■ Electrically isolated base plate ■ Available up to 1200 V RRM, V DRM
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E78996
E78996 scr
p402w
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thyristor dk
Abstract: No abstract text available
Text: Bulletin 125185/B International S R ectifier ST083S SERIES Stud Version INVERTER GRADE THYRISTORS Features • All diffused design ■ C en ter am plifying gate ■ G u a ra n te e d high dv/dt ■ G u a ra n te e d high di/dt ■ High surge cu rren t capability
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125185/B
ST083S
ST083S
D-437
D-438
D-439
thyristor dk
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TSM 30 CK 1200
Abstract: No abstract text available
Text: Bulletin 125172/A International B Rectifier ST303C.C s e r ie s INVERTER GRADE THYRISTORS Puk Version Features • M etal case w ith ceram ic insulator ■ International standard case T 0 -2 0 0 A B E-PUK 620A ■ All diffused design ■ Center am plifying gate
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125172/A
ST303C.
-200A
D-588
D-589
TSM 30 CK 1200
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thyristor dk
Abstract: No abstract text available
Text: Bulletin 125172/A International SRectifier ST303C.C s e rie s INVERTER GRADE THYRISTORS Puk Version Features • Metal case with ceramic insulator ■ International standard case TO-200AB E-PUK ■ All diffused design ■ Center amplifying gate ■ Guaranteed high dV/dt
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OCR Scan
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PDF
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125172/A
ST303C.
O-200AB
D-588
D-589
thyristor dk
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Untitled
Abstract: No abstract text available
Text: Bulletin 125173/B International S R ectifier ST303S S E R IE S Stud Version INVERTER GRADE THYRISTORS Features • A ll d iffu s e d d e s ig n ■ C e n te r a m p lify in g g a te ■ G u a ra n te e d h ig h d v /d t ■ G u a ra n te e d h ig h d i/d t
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125173/B
ST303S
ST303S
D-498
4A554S2
D-499
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