D06E60
Abstract: PG-TO252-3 IDD06E60 D06E6 marking diode 6a
Text: IDD06E60 Fast Switching EmCon Diode Product Summary Feature VRRM • 600 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge 600 V IF 6 A VF 1.5 V T jmax 175 °C • Low forward voltage • 175°C operating temperature • Easy paralleling
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IDD06E60
IDD06E60
PG-TO252-3-1
D06E60
726-IDD06E60
D06E60
PG-TO252-3
D06E6
marking diode 6a
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diode 1700v
Abstract: eupec igbt DIODE i2t DD400S17K6CB2 b2 diode DIODE B2 igbtmodules emcon diode
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules DD 400 S 17 K6C B2 1700V Dual Dioden Modul mit softer EmCon Diode 1700V Dual Diode Module with soft EmCon Diode Höchstzulässige Werte / Maximum rated values Periodische Spitzensperrspannung
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SIDC56D120E
Abstract: 2000A power diode
Text: Preliminary SIDC56D120E Fast switching diode chip in EMCON-Technology FEATURES: • 1200V EMCON technology 130 µm chip • soft , fast switching • low reverse recovery charge • small temperature coefficient Chip Type VCE SIDC56D120E 1200V ICn 75A A This chip is used for:
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SIDC56D120E
50mm2
C67047-A4686
165pes
4222E,
SIDC56D120E
2000A power diode
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4344
Abstract: SIDC06D60F
Text: Preliminary SIDC06D60F Fast switching diode chip in EMCON-Technology FEATURES: • 600V EMCON technology 70 µm chip • soft , fast switching • low reverse recovery charge • small temperature coefficient Chip Type VCE SIDC06D60F 600V ICn 15A A This chip is used for:
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SIDC06D60F
Q67050-A4038A001
4344E,
4344
SIDC06D60F
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a2206
Abstract: SIDC30D120E
Text: Preliminary SIDC30D120E Fast switching diode chip in EMCON-Technology FEATURES: • 1200V EMCON technology 130 µm chip • soft , fast switching • low reverse recovery charge • small temperature coefficient Chip Type VCE SIDC30D120E 1200V ICn 35A A This chip is used for:
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SIDC30D120E
C67047-A2206E001
4182E,
a2206
SIDC30D120E
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SIDC03D120H
Abstract: 4372H
Text: Preliminary SIDC03D120H Fast switching diode chip in EMCON-Technology FEATURES: • 1200V EMCON technology 120 µm chip • soft , fast switching • low reverse recovery charge • small temperature coefficient Chip Type VCE SIDC03D120H 1200V ICn 4A A This chip is used for:
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SIDC03D120H
85mm2
Q67050-A4111A001
4372H,
SIDC03D120H
4372H
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IDB30E120
Abstract: IDP30E120
Text: IDB30E120 Target IDP30E120 Fast Switching EmCon Diode A • 1200V EmCon technology • fast recovery • soft switching • low reverse recovery charge • low forward voltage ® C C C A C A TO 263 Type IDB30E120 VRRM IF VF Tj 1200V 30A 1.8 V 150°C IDP30E120
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IDB30E120
IDP30E120
Jan-01
IDB30E120
IDP30E120
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IDB09E060
Abstract: IDD09E060 IDP09E060
Text: IDD09E060 Target IDB09E060 IDP09E060 Fast Switching EmCon Diode A • 600V EmCon technology • fast recovery • soft switching • low reverse recovery charge • low forward voltage ® C C C C A TO 252 Type VRRM IF VF Tj IDD09E060 600V 9A 1.8 V 150°C
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IDD09E060
IDB09E060
IDP09E060
Jan-01
IDB09E060
IDD09E060
IDP09E060
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IDB04E120
Abstract: IDP04E120
Text: IDB04E120 Target IDP04E120 Fast Switching EmCon Diode A • 1200V EmCon technology • fast recovery • soft switching • low reverse recovery charge • low forward voltage ® C C C A C A TO 263 Type IDB04E120 VRRM IF VF Tj 1200V 4A 1.65 V 150°C IDP04E120
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IDB04E120
IDP04E120
Jan-01
IDB04E120
IDP04E120
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30u60
Abstract: ixys dsei 8-06 ixys dsei STTH 3060 MUR 8120 ixys dsei 12-12 10U60 RHRG 8120 40U60 ixys dsei 60-06
Text: Cross Reference List EmCon Diodes Product Name Company VRRM [V] Package IF @ [A] 125°C Typ VF [V] 25°C di/dt=-200A/µs VR=200V Typ Typ tRR [ns] Qrr [nC] 25°C 25°C 40 28 40 28 Special features Closest Infineon Equivalent IR IR HFA 04 HFA 04 TB60S TB60 600
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-200A/
TB60S
TA60CS
TA60C
04E120
09E120
30u60
ixys dsei 8-06
ixys dsei
STTH 3060
MUR 8120
ixys dsei 12-12
10U60
RHRG 8120
40U60
ixys dsei 60-06
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FD400R12KE3
Abstract: No abstract text available
Text: Technische Information / technical information FD400R12KE3 IGBT-Module IGBT-modules 62mm C-Serien Modul mit Trench/Feldstop IGBT3 und EmCon High Efficiency Diode 62mm C-series module with trench/fieldstop IGBT3 and EmCon High Efficiency diode IGBT-Wechselrichter / IGBT-inverter
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FD400R12KE3
FD400R12KE3
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k06t60
Abstract: igbt k06t60 IKA06N60T PG-TO220-3-31 Wr1c
Text: IKA06N60T TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop ® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode Features • Very low VCE sat 1.5 V (typ.) • Maximum Junction Temperature 175 °C • Short circuit withstand time – 5µs
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IKA06N60T
PG-TO-220-3-31
k06t60
igbt k06t60
IKA06N60T
PG-TO220-3-31
Wr1c
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FZ300R12KE3G
Abstract: No abstract text available
Text: Technische Information / technical information FZ300R12KE3G IGBT-Module IGBT-modules 62mm C-Serien Modul mit Trench/Feldstop IGBT3 und Emcon High Efficiency Diode 62mm C-series module with the trench/fieldstop IGBT3 and Emcon High Efficiency diode IGBT-Wechselrichter / IGBT-inverter
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FZ300R12KE3G
FZ300R12KE3G
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FS100R12KT3
Abstract: No abstract text available
Text: Technische Information / technical information FS100R12KT3 IGBT-Module IGBT-modules EconoPACK 3 Modul mit schnellem Trench/Feldstop IGBT3 und High Efficiency Diode EconoPACK™3 with fast trench/fieldstop IGBT3 and EmCon High Efficiency diode IGBT-Wechselrichter / IGBT-inverter
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FS100R12KT3
FS100R12KT3
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SIDC14D60F
Abstract: No abstract text available
Text: Preliminary SIDC14D60F Fast switching diode chip in EMCON-Technology FEATURES: • 600V EMCON technology 70 µm chip • soft , fast switching • low reverse recovery charge • small temperature coefficient Chip Type VCE SIDC14D60F 600V ICn 45A A This chip is used for:
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SIDC14D60F
4174E,
SIDC14D60F
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L4241M
Abstract: No abstract text available
Text: Preliminary SIDC42D170E6 Fast switching diode chip in EMCON-Technology FEATURES: • 1700V EMCON technology 200 µm chip • soft , fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC42D170E6 1700V IF 50A A This chip is used for:
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SIDC42D170E6
Q67050-A4119sawn
L4241M,
L4241M
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Emcon
Abstract: SIDC78D170H
Text: SIDC78D170H Fast switching diode chip in EMCON 3 -Technology FEATURES: • 1700V EMCON 3 technology 200 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR IF SIDC78D170H 1700V 150A This chip is used for:
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SIDC78D170H
Q67050-A4177A001
Emcon
SIDC78D170H
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SIDC161D170H
Abstract: No abstract text available
Text: SIDC161D170H Fast switching diode chip in EMCON 3 -Technology FEATURES: • 1700V EMCON 3 technology 200 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR IF SIDC161D170H 1700V 300A A This chip is used for:
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SIDC161D170H
Q67050-A4180A001
SIDC161D170H
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SIDC07D60F6
Abstract: No abstract text available
Text: Preliminary SIDC07D60F6 Fast switching diode chip in EMCON-Technology FEATURES: • 600V EMCON technology 70 µm chip • soft , fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR IF SIDC07D60F6 600V 22.5A A This chip is used for:
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SIDC07D60F6
Q67050-A4039A001
4364M,
SIDC07D60F6
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SIDC14D60E6
Abstract: No abstract text available
Text: Preliminary SIDC14D60E6 Fast switching diode chip in EMCON-Technology FEATURES: • 600V EMCON technology 70 µm chip • soft , fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC14D60E6 600V IF 30A A This chip is used for:
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SIDC14D60E6
C67047-A4678A001
4173M,
SIDC14D60E6
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diode Vr 1200v
Abstract: a4100 Q67050-A4100 SIDC53D120H6
Text: Preliminary SIDC53D120H6 Fast switching diode chip in EMCON-Technology FEATURES: • 1200V EMCON technology 120 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR IF SIDC53D120H6 1200V 100A A This chip is used for:
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SIDC53D120H6
Q67050-A4100
4392S,
diode Vr 1200v
a4100
Q67050-A4100
SIDC53D120H6
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STR-G6551
Abstract: STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312
Text: Cross Reference, V1.0, Apr. 2002 Alphanumerical Cross Reference CoolMOSTM/IGBT/EmConTM/CoolSETTM Power Management & Supply N e v e r s t o p t h i n k i n g . Alphanumerical Cross Reference Revision History: 2002-04 V1.0 Previous Version: Page Subjects major changes since last revision
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2002-Sep.
STR-G6551
STR-F6654
g6551
TDA16822
STR-F6653
strg6551
IGBT cross reference
KA5M0565R
TOP224Y equivalent
BUP 312
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SIDC14D120H6
Abstract: No abstract text available
Text: Preliminary SIDC14D120H6 Fast switching diode chip in EMCON-Technology FEATURES: • 1200V EMCON technology 120 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC14D120H6 1200V IF 25A A This chip is used for:
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SIDC14D120H6
Q67050-A4096A102
4172S,
SIDC14D120H6
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SIDC32D170H
Abstract: Emcon
Text: SIDC32D170H Fast switching diode chip in EMCON 3 -Technology FEATURES: • 1700V EMCON 3 technology 200 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC32D170H 1700V IF 50A A This chip is used for:
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SIDC32D170H
Q67050-A4174A001
SIDC32D170H
Emcon
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