AN 34002
Abstract: marking 805 FC805 SB05 IR150 an 34001
Text: Ordering number :EN3400B FC805 Silicon Schottky Barrier Diode 30V, 500mA Rectifier Features Package Dimensions • Low forward voltage VF max=0.55V . · Fast reverse recorvery time (trr max=10ns) . · Composite type with 2 diodes contained in the CP package currently in use, saving the mounting space
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EN3400B
FC805
500mA
FC805
FC805]
AN 34002
marking 805
SB05
IR150
an 34001
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2SK1461
Abstract: ITR01609 ITR01610 ITR01611 ITR01612 EN3464A
Text: 2SK1461 Ordering number : EN3464A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK1461 General-Purpose Switching Device Applications Features • • Low ON-state resistance. Ultrahigh-speed switching. Specifications Absolute Maximum Ratings at Ta=25°C
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2SK1461
EN3464A
2SK1461
ITR01609
ITR01610
ITR01611
ITR01612
EN3464A
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LB1662D
Abstract: LB1662M MFP16FS motor dc fan 48v 3097B
Text: Ordering number : EN3416B LB1662D LB1662M Monolithic Digital IC DC Fan Motor Drivers Overview The LB1662D, 1662M are 2-phase brushless motor drivers operated from 5V power supply. Motor Lock protection and automatic return can be provided with a minimum number of external parts.
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EN3416B
LB1662D
LB1662M
LB1662D,
1662M
LB1662D
LB1662M
MFP16FS
motor dc fan 48v
3097B
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k1459
Abstract: 2SK1459LS ITR01582 ITR01583 ITR01584 ITR01585 ITR01586 ITR01587 N3001
Text: 2SK1459LS Ordering number : EN3462C SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK1459LS Ultrahigh-Speed Switching Applications Features • • Low ON-resistance, ultrahigh-speed switching. Attachment workability is good by Mica-less package.
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2SK1459LS
EN3462C
k1459
2SK1459LS
ITR01582
ITR01583
ITR01584
ITR01585
ITR01586
ITR01587
N3001
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Untitled
Abstract: No abstract text available
Text: Ordering number :EN3401A FC806 Silicon Schottky Barrier Diode 50V, 100mA Rectifier Features Package Dimensions • Low forward voltage VF max=0.55V . · Fast reverse recorvery time (trr max=10ns) . · Composite type with 2 diodes contained in the CP package currently in use, saving the mounting space
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EN3401A
FC806
100mA
FC806
FC806]
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SB01
Abstract: FC806 marking 806
Text: Ordering number :EN3401A FC806 Silicon Schottky Barrier Diode 50V, 100mA Rectifier Features Package Dimensions • Low forward voltage VF max=0.55V . · Fast reverse recorvery time (trr max=10ns) . · Composite type with 2 diodes contained in the CP package currently in use, saving the mounting space
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EN3401A
FC806
100mA
FC806
FC806]
SB01
marking 806
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Untitled
Abstract: No abstract text available
Text: Ordering number : EN3478 S M fr o i I FCÏ43 No.3478 N P N E p itax ial P la n a r Silicon C om posite T ra n sisto r Switching Applications with Bias Resistance A p p lic a tio n s •S w itching circuits, in v e rte r circu its, interface circuits, d riv er circu its
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EN3478
FC143
2SC4360,
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2SK1445
Abstract: No abstract text available
Text: O rdering num ber: EN3448A 2SK1445 N0.3448A N-Channel Silicon MOSFET SA\YO Ultrahigh-Speed Switching Applications i Features •Low ON-state resistance. • Ultrahigh-speed switching. • Micaless package facilitating easy mounting. unit Absolute Maximum Ratings at Ta = 25°C
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EN3448A
2SK1445
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2SK1443
Abstract: No abstract text available
Text: O rdering num ber: EN3446A 2SK1443 N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications F e a tu re s • Low ON-state resistance. •Ultrahigh-speed switching. ■Micaless package facilitating easy mounting. A bsolute M axim um R atings a t Ta = 25°C
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EN3446A
2SK1443
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EN3445
Abstract: 2SK1442 2420I
Text: Ordering number: EN3445 2SK1442 No. 3445 N-Channel MOS Silicon FET sa H yo i Very High-Speed Switching Applications F e a tu re s •Low ON-state resistance. • Very high-speed switching. A b so lu te M axim um R atin g s a t Ta=25°C Drain to Source Voltage
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EN3445
2SK1442
10/iS,
2420I
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2SK1456
Abstract: R6S DIODE R20J
Text: Ordering number : EN3459 2SK1456 N-Channel MOS Silicon FET Very High-Speed Switching Applications F e a tu re s • Low O N-state resistance. •Very high-speed switching. ■Converters. b so lu te M axim um R atin g s a t Ta=25°C D rain to Source Voltage
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EN3459
2SK1456
R6S DIODE
R20J
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GWJ5
Abstract: 2SK1466 200V 50A mos fet so280
Text: ¡O rd e rin g number: EN3469 2SK1466 No.3469 N-Channel MOS Silicon FET Very High-Speed Switching Applications Features • Low ON-state resistance. • Very high-speed switching. • Converters. Absolute Maximum Ratings at Ta = 25°C Drain to Source Voltage
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EN3469
2SK1466
GWJ5
200V 50A mos fet
so280
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2SK1438
Abstract: No abstract text available
Text: Ordering n u m b e r: EN3441 2SK1438 N-Channel MOS Silicon FET Very High-Speed Switching Applications F eatures •Low ON-state resistance. ■Very high-speed switching. A bsolute Maximum Ratings at Ta=25°C Drain to Source Voltage Vdss Gate to Source Voltage
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EN3441
2SK1438
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Untitled
Abstract: No abstract text available
Text: Ordering number : EN3479 FC144 No.3479 NPN Epitaxial Planar Silicon Composite Transistor Switching Applications with Bias Resistance A p p licatio n s • Switching circuits, inverter circuits, interface circuits, driver circuits. F e a tu re s • On-chip bias resistances R1 = 2.2kfi, R2 = lOkO
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EN3479
FC144
FC144
2SC3863,
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2sc536
Abstract: B632K d612k 2sc1175 8Q transistor d612 2SB632 2SB632K 341G 2SB6
Text: Ordering' number; EN341G 2SB632.632K/2SD612.612K N 0 .3 4 IG PNP/NPN Epitaxial Planar Silicon Transistors SAXYO i 25V/35V, 2A Low-Frequency Power Amp Applications F eatures • High collector dissipation and wide ASO. : 2SB632,632K A b solu te M axim um R atings at Ta = 25°C
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EN341G
2SB632
632K/2SD612
5V/35V,
2SB632,
2SB632K,
D612K
10hAJe
2sc536
B632K
d612k
2sc1175
8Q transistor
d612
2SB632K
341G
2SB6
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2SK10S
Abstract: 2SK1053 EN3440 1A05A
Text: Ordering number : EN3440 2SK1053 No.3440 N-Channel MOS Silicon FET Very High-Speed Switching Applications F eatures • Low ON-state resistance. • Very high-speed switching. A bsolute M axim um R atings at Ta=25°C Drain to Source Voltage Vdss Gate to Source Voltage
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EN3440
2SK1053
10//S,
2SK10S
2SK1053
EN3440
1A05A
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Untitled
Abstract: No abstract text available
Text: Ordering number : EN3462A N0.3462A 2SK1459 N-Channel Silicon MOSFET Ultarahigh-Speed Switching Applications Features • Low ON-state resistance. • Ultarahigh-speed switching. • Micaless package facilitating mounting. Absolute Maximum Ratings at Ta = 25°C
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EN3462A
2SK1459
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DSC015
Abstract: No abstract text available
Text: Ordering number :EN3408 D SCO 15 No.3408 SA\YO Silicon E pitaxial P la n ar Type i High-Voltage Switching Diode F e a tu re s •Ideally suited for use in hybrid ICs because of small-sized package. • High breakdown voltage. A b so lu te M axim um R a tin g s a t Ta = 25°C
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EN3408
DSC015
100mA
DSC015
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D600K
Abstract: B631k b631 k b631k D600K to 126 2SB631 TO-126 D600 d600 2SB6 2Sd600
Text: Ordering num ber: EN346G 2SB631,631K/2SD600,600K PNP/NPN Epitaxial Planar Silicon Transistors SANYO 100V/120V, 1A Low-Frequency Power Amp Applications i F e a tu re s • High breakdown voltage V ceo 100/120V, High current 1A. •Low saturation voltage, excellent hpE linearity.
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EN346G
2SB631
631K/2SD600
00V/120V,
100/120V,
2SB631,
2SB631K,
D600K
2SD60
D600K
B631k
b631
k b631k
D600K to 126
TO-126 D600
d600
2SB6
2Sd600
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2SA1653
Abstract: T 2066
Text: Ordering number : EN3477 _FC142 PNP Epitaxial Planar Silicon Composite Transistor Switching Applications with Bias Resistance A pplications • Switching circuits, inverter circuits, interface circuits, driver circuits F eatu re s • On-chip bias resistances Rl = 4.7kH, R2= 10ki2
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EN3477
FC142
10ki2)
FC142
2SA1653,
2SA1653
T 2066
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DBF40T
Abstract: DBF40TC DBF40TE DBF40TG
Text: [ord ering number :EN3403A _ DBF40T Silicon Diffused Junction Type IS A % Y O i Applications Package Dimensions • F a r p rim ary re c tific a tio n as sw itc h in g reg u lato r. u n it:m in / / 1203 / / Features • H ig h re lia b ility a tta in e d g la ss p a ssiv a tio n .
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EN3403A
DBF40T
DBF40TC
DBF40TE
DBF40TG
DBF40T
DBF40TE
DBF40TG
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EN3404
Abstract: DBF20T DBF20TC DBF20TE DBF20TG
Text: Ordering number : EN3404 _ DBF20T Silicon Diffused Junction Type 2.0A S ingle-Phase Bridge Rectifier A p p lic a tio n • For prim ary rectification as sw itching regulator. F e a tu re s • High reliability attained by glass passivation. • High surge.
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EN3404
DBF20T
DBF20TC
DBF20TE
DBF20TG
50X50X1
EN3404
DBF20T
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3400B
Abstract: FC805 SB05-03C 34002
Text: Ordering n u m b e r: EN3400B _ FC805 NO.3400B Silicon Schottky Barrier Diode 30V, 500mA Rectifier F eatu re s • Low forward voltage Vp max = 0.55V . •Fast reverse recovery time (trr max = 10ns). • Composite type with 2 diodes contained in the CP package currently in use, saving the mounting space
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EN3400B
3400B
FC805
500mA
FC805
SB05-03C,
3400B
SB05-03C
34002
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T03A
Abstract: T-03-A 2SK1052
Text: Ordering number : EN3439 r SA\YO 2SK1052 No.3439 N-Channel MOS Silicon FET i Very High-Speed Switching Applications F eatures • Low ON-state resistance. • Very high-speed switching. A bsolute Maximum Ratings at Ta = 25°C Drain to Source Voltage Vdss Gate to Source Voltage
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EN3439
2SK1052
450VjVgs
T03A
T-03-A
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