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    Abstract: No abstract text available
    Text: 3LN03M Ordering number : ENN8153 N-Channel Silicon MOSFET 3LN03M General-Purpose Switching Device Applications Features • • • • Low ON-resistance. High-speed switching. 2.5V drive. High ESD Voltage TYP 300V [Built-in one side diode for protection between Gate-to-Source].


    Original     		3LN03M ENN8153 3LN03M/D PDF

    diode marking YG

    Abstract: CISS 3010 3LN03M marking YG
    Text: 3LN03M Ordering number : ENN8153 N-Channel Silicon MOSFET 3LN03M General-Purpose Switching Device Applications Features • • • • Low ON-resistance. High-speed switching. 2.5V drive. High ESD Voltage TYP 300V [Built-in one side diode for protection between Gate-to-Source].


    Original     		3LN03M ENN8153 diode marking YG CISS 3010 3LN03M marking YG PDF