EPA120B Search Results

EPA120B Datasheets (4)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
EPA120B		Excelics Semiconductor	8-12V high efficiency heterojunction power FET		Original	PDF
EPA120B-100F		Excelics Semiconductor	8-12V high efficiency heterojunction power FET		Original	PDF
EPA120B-100P		Excelics Semiconductor	High Efficiency Heterojuction FETs		Original	PDF
EPA120BV		Excelics Semiconductor	8-12V high efficiency heterojunction power FET		Original	PDF

EPA120B Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
EPA120B-100P Abstract: 100MIL Text: EPA120B-100P High Efficiency Heterojunction Power FET UPDATED 01/13/2006 • • • • • • NON-HERMETIC 100MIL METAL FLANGE PACKAGE +29.0dBm TYPICAL OUTPUT POWER 11.5dB TYPICAL POWER GAIN AT 12GHz 0.3 X 1200 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION	Original	EPA120B-100P 100MIL 12GHz 18GHz 175oC -65/175oC EPA120B-100P	PDF
MA 7824 Abstract: EPA120B-100P 100MIL Text: EPA120B-100P High Efficiency Heterojunction Power FET UPDATED 10/30/2006 • • • • • • NON-HERMETIC 100MIL METAL FLANGE PACKAGE +29.0dBm TYPICAL OUTPUT POWER 11.5dB TYPICAL POWER GAIN AT 12GHz 0.3 X 1200 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION	Original	EPA120B-100P 100MIL 12GHz 18GHz MA 7824 EPA120B-100P	PDF
EPA120B-100F Abstract: No abstract text available Text: Excelics EPA120B-100F PRELIMINARY DATA SHEET High Efficiency Heterojunction Power FET P1dB G1dB PARAMETERS/TEST CONDITIONS Output Power at 1dB Compression Vds=8V, Ids=50% Idss Gain at 1dB Compression Vds=8V, Ids=50% Idss 7<3 7<3 All Dimensions In mils	Original	EPA120B-100F 12GHz EPA120B-100F	PDF
EPA120B Abstract: EPA120BV EPA120 Text: Excelics EPA120B/EPA120BV DATA SHEET High Efficiency Heterojunction Power FET 550 • • • • • • • +29.5dBm TYPICAL OUTPUT POWER 9.0dB TYPICAL POWER GAIN FOR EPA120B AND 10.5dB FOR EPA120BV AT 18GHz 0.3 X 1200 MICRON RECESSED “MUSHROOM” GATE	Original	EPA120B/EPA120BV EPA120B EPA120BV 18GHz EPA120B 12GHz EPA120BV EPA120	PDF
EPA120B Abstract: EPA120BV Text: EPA120B/EPA120BV High Efficiency Heterojunction Power FET UPDATED 08/07/2009 550 • • • • • • +29.5dBm TYPICAL OUTPUT POWER 9.0dB TYPICAL POWER GAIN FOR EPA120B AND 10.5dB FOR EPA120BV AT 18GHz 0.3 X 1200 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION	Original	EPA120B/EPA120BV EPA120B EPA120BV 18GHz EPA120B 12GHz	PDF
EPA080A-100P Abstract: EPA060B-70 EPA240BV EPA018A EIC7179-4 Microwave GaAs FET catalogue EMP108-P1 EPA160AV EPA120EV EPA480C Text: Summer 2009 1 Excelics SEMICONDUCTOR Excelics Semiconductor, Inc. is an integrated device manufacturing company founded in March 1995. Corporate headquarters and manufacturing are located in Silicon Valley, approximately 50 miles south of San Francisco, California.	Original		PDF
Curtice Abstract: EFA018A EPA030A EPA480C EPA060B EFA040A EFA025A EPA025 220E-12 Excelics EPA018A Text: Large Signal Model Parameters for Curtice-Cubic Model For Low Distortion GaAs Power FETs Curtice-Ettenburg Model Parameter BETA GAMMA VOUT0 VT0 A0 A1 A2 A3 TAU R1 R2 VB0 VBI RF IS N RDS CRF RD RG RS RIN CGSO CGDO FC CDS CGS CGD KF4 AF TNOM XTI EG VTOTC BETATCE	Original	EFA018A 00E-12 40E-14 00E-08 63E-13 80E-14 00E-14 EFA025A Curtice EFA018A EPA030A EPA480C EPA060B EFA040A EFA025A EPA025 220E-12 Excelics EPA018A	PDF
EPA018A Abstract: EPA060B EFA018A Excelics EPA018A EPA480C EPA025A EPA040A EPA060A EPA240D EPA030C Text: EXCELICS SEMICONDUCTOR, INC. Small Signal Equivalent Circuit Model The small signal model shown below can be useful for extrapolating and interpolating the S-parameters as well as for use in circuit simulators that cannot handle S-parameters directly. The element values are derived by fitting the	Original	EPA018A EPA025A EPA030C EPA040A EPA060A EFA480B EFA480C EFA720A EFA960B EFA1200A EPA018A EPA060B EFA018A Excelics EPA018A EPA480C EPA025A EPA040A EPA060A EPA240D EPA030C	PDF