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    EPC2 Price and Stock

    Efficient Power Conversion EPC2071

    TRANS GAN 100V .0022OHM 21BMPD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey EPC2071 Cut Tape 17,202 1
    • 1 $7.42
    • 10 $5.022
    • 100 $7.42
    • 1000 $3.1
    • 10000 $3.1
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    EPC2071 Digi-Reel 17,202 1
    • 1 $7.42
    • 10 $5.022
    • 100 $7.42
    • 1000 $3.1
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    EPC2071 Reel 17,000 1,000
    • 1 -
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    • 1000 $3.1
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    Efficient Power Conversion EPC2031

    GANFET NCH 60V 31A DIE
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey EPC2031 Reel 12,000 500
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    • 1000 $3.65
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    Efficient Power Conversion EPC2055

    GANFET N-CH 40V 29A DIE
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    DigiKey EPC2055 Reel 7,500 2,500
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    • 10000 $1.025
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    Efficient Power Conversion EPC2308

    TRANS GAN 150V .006OHM 7QFN
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    DigiKey EPC2308 Reel 6,000 3,000
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    • 10000 $1.9375
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    Efficient Power Conversion EPC2107

    MOSFET 3N-CH 100V 9BGA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey EPC2107 Cut Tape 5,192 1
    • 1 $2.84
    • 10 $1.838
    • 100 $2.84
    • 1000 $0.94281
    • 10000 $0.94281
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    EPC2107 Digi-Reel 5,192 1
    • 1 $2.84
    • 10 $1.838
    • 100 $2.84
    • 1000 $0.94281
    • 10000 $0.94281
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    EPC2107 Reel 2,500 2,500
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    • 10000 $0.85
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    Find more EPC2 price and stock on Findchips.com

    EPC2 Datasheets (152)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    EPC2 Altera Configuration Devices for SRAM-Based LUT Devices Original PDF
    EPC2 Altera Configuration Device for ACEX, APEX, FLEX & Mercury Devices Original PDF
    EPC2001 Efficient Power Conversion FETs - Single, Discrete Semiconductor Products, TRANS GAN 100V 25A BUMPED DIE Original PDF
    EPC2001C EPC Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - TRANS GAN 100V 36A BUMPED DIE Original PDF
    EPC2007 Efficient Power Conversion FETs - Single, Discrete Semiconductor Products, TRANS GAN 100V 6A BUMPED DIE Original PDF
    EPC2007C EPC Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - TRANS GAN 100V 6A BUMPED DIE Original PDF
    EPC200-CSP5 Espros Photonics SENSOR PHOTODIODE 850NM Original PDF
    EPC2010 Efficient Power Conversion FETs - Single, Discrete Semiconductor Products, TRANS GAN 200V 12A BUMPED DIE Original PDF
    EPC2010C EPC Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - TRANS GAN 200V 22A BUMPED DIE Original PDF
    EPC2010ENGR Efficient Power Conversion FETs - Single, Discrete Semiconductor Products, TRANS GAN 200V 12A BUMPED DIE Original PDF
    EPC2012 Efficient Power Conversion FETs - Single, Discrete Semiconductor Products, TRANS GAN 200V 3A BUMPED DIE Original PDF
    EPC2012C EPC Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - TRANS GAN 200V 5A BUMPED DIE Original PDF
    EPC2014 Efficient Power Conversion FETs - Single, Discrete Semiconductor Products, TRANS GAN 40V 10A BUMPED DIE Original PDF
    EPC2014C EPC Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - TRANS GAN 40V 10A BUMPED DIE Original PDF
    EPC2015 Efficient Power Conversion FETs - Single, Discrete Semiconductor Products, TRANS GAN 40V 33A BUMPED DIE Original PDF
    EPC2015C EPC Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - TRANS GAN 40V 33A BUMPED DIE Original PDF
    EPC2016 Efficient Power Conversion FETs - Single, Discrete Semiconductor Products, TRANS GAN 100V 11A BUMPED DIE Original PDF
    EPC2016C EPC Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - TRANS GAN 100V 18A BUMPED DIE Original PDF
    EPC2018 Efficient Power Conversion FETs - Single, Discrete Semiconductor Products, TRANS GAN 150V 12A BUMPED DIE Original PDF
    EPC2019 EPC Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - TRANS GAN 200V 8.5A BUMPED DIE Original PDF
    ...

    EPC2 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    EPC2001

    Abstract: EPC Gan transistor FX-93 FET MARKING QG
    Text: eGaN FET DATASHEET EPC2001 EPC2001 – Enhancement Mode Power Transistor VDSS , 100 V RDS ON , 7 mW ID , 25 A PRELIMINARY EFFICIENT POWER CONVERSION HAL Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(ON), while its lateral device structure


    Original     		EPC2001 EPC2001 EPC Gan transistor FX-93 FET MARKING QG PDF

    Untitled

    Abstract: No abstract text available
    Text: Series EPC Up to 110A 460 Vac Phase Angle Controller Part Number Description EPC24N10A 10A, 265 Vac EPC24N40A 40A, 265 Vac EPC24N40R 40A, 265 Vac EPC46N70A 70A, 460 Vac EPC46N110A 110A, 460 Vac Part Number Explanation EPC 24 N 10 A NOTES 1 Line Voltage nominal): 24 = 240 Vac; 46 = 460 Vac


    Original     		EPC24N10A EPC24N40A EPC24N40R EPC46N70A EPC46N110A EPC46N70A, EPC\032003\Q1 PDF

    Untitled

    Abstract: No abstract text available
    Text: eGaN FET DATASHEET EPC2014 EPC2014 – Enhancement Mode Power Transistor VDSS , 40 V RDS ON , 16 mW ID , 10 A NEW PRODUCT EFFICIENT POWER CONVERSION HAL Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high


    Original     		EPC2014 EPC2014 PDF

    Untitled

    Abstract: No abstract text available
    Text: EPC2010 eGaN FET DATASHEET EPC2010 – Enhancement Mode Power Transistor VDSS , 200 V RDS ON , 25 mΩ ID , 12 A NEW PRODUCT EFFICIENT POWER CONVERSION HAL Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high electron mobility and low temperature coeicient allows very low RDS(ON), while its lateral device structure


    Original     		EPC2010 PDF

    Untitled

    Abstract: No abstract text available
    Text: EPC2018 eGaN FET DATASHEET EPC2018 – Enhancement Mode Power Transistor VDSS , 150 V RDS ON , 25 mΩ ID , 12 A NEW PRODUCT EFFICIENT POWER CONVERSION HAL Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high electron mobility and low temperature coeicient allows very low RDS(ON), while its lateral device structure


    Original     		EPC2018 PDF

    Untitled

    Abstract: No abstract text available
    Text: EPC2015 eGaN FET DATASHEET EPC2015 – Enhancement Mode Power Transistor VDSS , 40 V RDS ON , 4 mW ID , 33 A NEW PRODUCT EFFICIENT POWER CONVERSION HAL Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high electron mobility and low temperature coeicient allows very low RDS(ON), while its lateral device structure


    Original     		EPC2015 EPC2015 PDF

    Untitled

    Abstract: No abstract text available
    Text: eGaN FET DATASHEET EPC2015 EPC2015 – Enhancement Mode Power Transistor VDSS , 40 V RDS ON , 4 mW ID , 33 A NEW PRODUCT EFFICIENT POWER CONVERSION HAL Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(ON), while its lateral device structure


    Original     		EPC2015 PDF

    Untitled

    Abstract: No abstract text available
    Text: eGaN FET DATASHEET EPC2012 EPC2012 – Enhancement Mode Power Transistor VDSS , 200 V RDS ON , 100 mW ID , 3 A NEW PRODUCT EFFICIENT POWER CONVERSION HAL Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(ON), while its lateral device structure


    Original     		EPC2012 PDF

    EPC Gan transistor

    Abstract: EPC2001 DIODE marking ED X9
    Text: eGaN FET DATASHEET EPC2001 EPC2001 – Enhancement Mode Power Transistor VDSS , 100 V RDS ON , 7 mW ID , 25 A NEW PRODUCT EFFICIENT POWER CONVERSION HAL Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(ON), while its lateral device structure


    Original     		EPC2001 EPC Gan transistor EPC2001 DIODE marking ED X9 PDF

    EPC19

    Abstract: inverter 10w UI15 EPC23 INT014S INT018S epc-19
    Text: CCFL Driving Inverter Transformer Type Dimensions: UNIT : mm INT013S EPC19.8 Recommand Pad 5-2.5 3.3 32.0 7.0 7 11 28.2 20.5 0.6x0.4 1.6 8 1 2.5 INT014S (EPC23) 11.0 3.5 43.0 2.1 11 10.0 0.6x0.4 13.6 39.0 24.0 7 8 INPUT VOLTAGE :12(Vdc) SUITABLE FREQUENCY :


    Original     		INT013S EPC19 INT014S EPC23) INT015S I1630 INT017S INT018S UI1520) inverter 10w UI15 EPC23 INT014S INT018S epc-19 PDF

    Untitled

    Abstract: No abstract text available
    Text: eGaN FET DATASHEET EPC2007 EPC2007 – Enhancement Mode Power Transistor VDSS , 100 V RDS ON , 30 mW ID , 6 A NEW PRODUCT EFFICIENT POWER CONVERSION HAL Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(ON), while its lateral device structure


    Original     		EPC2007 PDF

    Untitled

    Abstract: No abstract text available
    Text: eGaN FET DATASHEET EPC2018 EPC2018 – Enhancement Mode Power Transistor VDSS , 150 V RDS ON , 25 mW ID , 12 A NEW PRODUCT EFFICIENT POWER CONVERSION HAL Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(ON), while its lateral device structure


    Original     		EPC2018 PDF

    Untitled

    Abstract: No abstract text available
    Text: eGaN FET DATASHEET EPC2818 EPC2818 – Enhancement Mode Power Transistor NEW PRODUCT VDSS , 150 V RDS ON , 25 mW ID , 12 A High Lead Bump Finish: 95%Pb/5%Sn EFFICIENT POWER CONVERSION HAL Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(ON), while its lateral device structure


    Original     		EPC2818 PDF

    Untitled

    Abstract: No abstract text available
    Text: eGaN FET DATASHEET EPC2801 EPC2801 – Enhancement Mode Power Transistor PRELIMINARY VDSS , 100 V RDS ON , 7 mW ID , 25 A High Lead Bump Finish: 95%Pb/5%Sn EFFICIENT POWER CONVERSION HAL Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(ON), while its lateral device structure


    Original     		EPC2801 PDF

    Untitled

    Abstract: No abstract text available
    Text: 100 V Half-Bridge with Gate Drive, using EPC2007 Rev 2.0


    Original     		EPC2007 PDF

    Untitled

    Abstract: No abstract text available
    Text: EPC2016 eGaN FET DATASHEET EPC2016 – Enhancement Mode Power Transistor VDSS , 100 V RDS ON , 16 mΩ ID , 11 A NEW PRODUCT EFFICIENT POWER CONVERSION HAL Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high electron mobility and low temperature coeicient allows very low RDS(ON), while its lateral device structure


    Original     		EPC2016 EPC2016 PDF

    Untitled

    Abstract: No abstract text available
    Text: EPC2014 eGaN FET DATASHEET EPC2014 – Enhancement Mode Power Transistor VDSS , 40 V RDS ON , 16 mΩ ID , 10 A NEW PRODUCT EFFICIENT POWER CONVERSION HAL Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high


    Original     		EPC2014 EPC2014 PDF

    transformer ferrite core

    Abstract: FERRITE core TRANSFORMER TDK, TRANSFORMER, EPC19 epc17 TRANSFORMER EPC19 EPC17 EPC TRANSFORMER EPC25 TDK CORE EPC27
    Text: reactor cores,EPC cores,tdk ferrite core,EPC10 core,EPC13 core,EPC17 core,EPC19 core, China Professional Ferrite Core Supplier p EPC CORES Introduce of EPC core EPC Cores cover many different kinds of types, such as EPC10 core, EPC13 core, EPC17 core, EPC19 core, EPC25


    Original     		EPC10 EPC13 EPC17 EPC19 EPC25 EPC27 transformer ferrite core FERRITE core TRANSFORMER TDK, TRANSFORMER, EPC19 epc17 TRANSFORMER EPC TRANSFORMER EPC25 TDK CORE PDF

    EPC2015

    Abstract: EPC Gan transistor FX-93 micrometer
    Text: eGaN FET DATASHEET EPC2015 EPC2015 – Enhancement Mode Power Transistor VDSS , 40 V RDS ON , 4 mW ID , 33 A PRELIMINARY EFFICIENT POWER CONVERSION HAL Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(ON), while its lateral device structure


    Original     		EPC2015 EPC2015 EPC Gan transistor FX-93 micrometer PDF

    Untitled

    Abstract: No abstract text available
    Text: eGaN FET DATASHEET EPC2815 EPC2815 – Enhancement Mode Power Transistor NEW PRODUCT VDSS , 40 V RDS ON , 4 mW ID , 33 A High Lead Bump Finish: 95%Pb/5%Sn EFFICIENT POWER CONVERSION HAL Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(ON), while its lateral device structure


    Original     		EPC2815 PDF

    Untitled

    Abstract: No abstract text available
    Text: EPC2012 eGaN FET DATASHEET EPC2012 – Enhancement Mode Power Transistor VDSS , 200 V RDS ON , 100 mW ID , 3 A NEW PRODUCT EFFICIENT POWER CONVERSION HAL Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high electron mobility and low temperature coeicient allows very low RDS(ON), while its lateral device structure


    Original     		EPC2012 Drain-to-Source409 PDF

    Untitled

    Abstract: No abstract text available
    Text: EPC2001 eGaN FET DATASHEET EPC2001 – Enhancement Mode Power Transistor VDSS , 100 V RDS ON , 7 mΩ ID , 25 A NEW PRODUCT EFFICIENT POWER CONVERSION HAL Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high electron mobility and low temperature coeicient allows very low RDS(ON), while its lateral device structure


    Original     		EPC2001 PDF

    inverter 60 watt

    Abstract: EPC17 inverter 100 watt EFD15 EPC19 CIT001 epc17 TRANSFORMER CIT003 CIT004 CIT005
    Text: CCFL Driving Inverter Transformer Type CIT001 EPC25 Dimensions: UNIT : mm 1.1 3.8 14.5 Specifications Recommand Pad 31.0 6 1 6 10 7 MAX.LAMP WATTANG :12W MAX.OPEN VOLTAGE :1500(Vrms) 27.0 28.0 0.8 7 10 1 19.0 CIT002 (EFD25) 15.0 3.8 27.5 0.8 1 MAX.LAMP WATTANG :17W


    Original     		CIT001 EPC25) CIT002 EFD25) 485x0 CIT003 EPC17) CIT006 EPC19) CIT005 inverter 60 watt EPC17 inverter 100 watt EFD15 EPC19 CIT001 epc17 TRANSFORMER CIT003 CIT004 CIT005 PDF

    lcd tv inverter schematic

    Abstract: lcd Inverter Delta schematic 32" lcd inverter lcd tv schematic ccfl lcd inverter schematic lcd inverter schematic tv lcd inverter schematic EPC25 inverter Delta ccfl inverter schematic
    Text: Inverter Transformer For LCD TV EPC25/40 Type Features: Easy surface mounting and compatible with hot-air reflow soldering. Low profile 13.0mm Max. . High voltage resistant and reliable due to multi-divisible construction. Green product version. Driving 8~10 pcs CCFL.


    Original     		EPC25/40 400Vdc UL650 EPC25/40-1 EPC25/40-2 lcd tv inverter schematic lcd Inverter Delta schematic 32" lcd inverter lcd tv schematic ccfl lcd inverter schematic lcd inverter schematic tv lcd inverter schematic EPC25 inverter Delta ccfl inverter schematic PDF