MSD700
Abstract: MSD703 MSD710 MSD706 MSD702 MSD701 MSD720 MSD731 MSD732 MSD705
Text: Multiplier Devices: MSD 700 Series Multiplier Devices Step Recovery Diodes Description The MicroMetrics MSD 700 series Step Recovery diodes are epitaxial silicon varactors which provide high output power and efficiencies in harmonic generator applications.
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micrometrics vco
Abstract: MHV502
Text: Microwave Hyperabrupt Tuning Varactors Description The MicroMetrics MHV 500 series Microwave Hyperabrupt Tuning Varactors are silicon epitaxial mesa devices with high reliability glass passivation which ensures optimum VCO settling time and flat post tuning
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chara2400
MHV500
MHV501
MHV502
MHV503
MHV504
MHV505
MHV506
MHV507
MHV508
micrometrics vco
MHV502
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MicroMetrics MHV 500 series
Abstract: MHV500 MHV513 MHV512 MHV503 MHV502 MHV501 MHV504 MHV507 "Tuning Varactors"
Text: Microwave Hyperabrupt Tuning Varactors Description The MicroMetrics MHV 500 series Microwave Hyperabrupt Tuning Varactors are silicon epitaxial mesa devices with high reliability glass passivation which ensures optimum VCO settling time and flat post tuning
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charact00
MHV500
MHV501
MHV502
MHV503
MHV504
MHV505
MHV506
MHV507
MHV508
MicroMetrics MHV 500 series
MHV500
MHV513
MHV512
MHV503
MHV502
MHV501
MHV504
MHV507
"Tuning Varactors"
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MSD700
Abstract: MSD710 MSD701 step recovery diode msd700 srd MSD724 MSD735 MSD706 MSD732 MSD705
Text: Multiplier Devices Multiplier Devices: MSD 700 Series Step Recovery Diodes Description The MicroMetrics MSD 700 series Step Recovery diodes are epitaxial silicon varactors which provide high output power and efficiencies in harmonic generator applications.
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MSD735
MSD736
MSD700
MSD710
MSD701
step recovery diode
msd700 srd
MSD724
MSD735
MSD706
MSD732
MSD705
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AT6021
Abstract: No abstract text available
Text: AT6021 SILICON ABRUPT JUNCTION TUNING VARACTOR DESCRIPTION: The AT6021 is an Epitaxial Silicon Abrupt Junction Microwave Tuning Varactor. This Device is Passivated With Silicon Dioxide Which Results in Very Low Leakage Current. The Capacitance Voltage Relationship
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AT6021
AT6021
CT0/CT60
CT8/CT60
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UP Converters
Abstract: GC3204 Microwave Generator
Text: GC3202 – GC3208 TM POWER GENERATION Harmonics Generator Varactors RoHS Compliant KEY FEATURES The GC3200 series of harmonic generator varactors uses a single epitaxial silicon die. Strict material and process controls result in high reproducibility. A
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GC3202
GC3208
GC3200
GC32xx
UP Converters
GC3204
Microwave Generator
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gc15002-00
Abstract: GC15005
Text: GC15001 – GC15013 TUNING DIODES Frequency Linear Tuning Varactors TM RoHS Compliant KEY FEATURES A Frequency Linear Tuning Varactor FLTVAR is a silicon epitaxial mesa device, designed to provide wideband Linear Tuning in VCO and filter applications.
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GC15001
GC15013
GC15xxxx
gc15002-00
GC15005
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AT6020
Abstract: No abstract text available
Text: AT6020 SILICON ABRUPT JUNCTION TUNING VARACTOR PACKAGE STYLE 15 DESCRIPTION: The AT6020 is an Epitaxial Silicon Abrupt Junction Microwave Tuning Varactor. This Device is Passivated With Silicon Dioxide Which Results in Very Low Leakage Current. The Capacitance Voltage Relationship
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AT6020
AT6020
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AT6019M
Abstract: No abstract text available
Text: AT6019M SILICON ABRUPT JUNCTION TUNING VARACTOR DESCRIPTION: PACKAGE STYLE 15 The AT6019M is an Epitaxial Silicon Abrupt Junction Microwave Tuning Varactor. This Device is Passivated With Silicon Dioxide Which Results in Very Low Leakage Current. The Capacitance Voltage Relationship
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AT6019M
AT6019M
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GC15000
Abstract: TM 937 GC15001 GC15001-00 GC15002-00 GC15003-00 GC15004-00 GC15013 GC15002
Text: GC15001 – GC15013 TUNING DIODES Frequency Linear Tuning Varactors TM RoHS Compliant KEY FEATURES A Frequency Linear Tuning Varactor FLTVAR is a silicon epitaxial mesa device, designed to provide wideband Linear Tuning in VCO and filter applications.
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GC15001
GC15013
GC15xxxx
GC15000
TM 937
GC15001
GC15001-00
GC15002-00
GC15003-00
GC15004-00
GC15013
GC15002
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Untitled
Abstract: No abstract text available
Text: GC3202 – GC3208 TM POWER GENERATION Harmonics Generator Varactors RoHS Compliant K EY FEAT U RES The GC3200 series of harmonic generator varactors uses a single epitaxial silicon die. Strict material and process controls result in high reproducibility. A
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GC3202
GC3208
GC3200
GC32xx
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varactor diode parameter
Abstract: tuning varactor CT25 Q62702-B70 BBY33
Text: Silicon Tuning Varactor ● BBY 33 BB-2 Tuning varactor in passivated Mesa technology epitaxial design Type Marking Ordering Code Pin Configuration Package1) BBY 33 BB-2 – Q62702-B70 Cathode: black dot, heat sink C1 Maximum Ratings Parameter Symbol Values
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Q62702-B70
varactor diode parameter
tuning varactor
CT25
Q62702-B70
BBY33
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AT9019-10
Abstract: No abstract text available
Text: AT9019-10 SILICON ABRUPT JUNCTION TUNING VARACTOR DESCRIPTION: PACKAGE STYLE 10 The AT9019-10 is an Epitaxial Silicon Abrupt Junction Microwave Tuning Varactor. This Device is Passivated With Silicon Dioxide Which Results in Very Low Leakage Current. The Capacitance Voltage Relationship
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AT9019-10
AT9019-10
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AT6019-10
Abstract: No abstract text available
Text: AT6019-10 SILICON ABRUPT JUNCTION TUNING VARACTOR DESCRIPTION: PACKAGE STYLE 10 The AT6019-10 is an Epitaxial Silicon Abrupt Junction Microwave Tuning Varactor. This Device is Passivated With Silicon Dioxide Which Results in Very Low Leakage Current. The Capacitance Voltage Relationship
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AT6019-10
AT6019-10
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DH724
Abstract: DH730 DH732
Text: TUNING VARACTOR Silicon hyperabrupt junction tuning varactor SILICON HYPERABRUPT JUNCTION TUNING VARACTOR Description This series of silicon tuning varactors consists of hyperabrupt epitaxial devices. They incorporate a passivated mesa technology. Packaged or chip devices are available for VHF linear electronic tuning.
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EH724
EH726
EH728
EH730
EH732
CTO/CT20
DH724
DH726
DH728
DH730
DH732
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Untitled
Abstract: No abstract text available
Text: Tuning Varactors FREQUENCY LINEAR TUNING VARACTORS DESCRIPTION APPLICATIONS A Frequency Linear Tuning Varactor FLTVAR TM is a silicon epitaxial mesa device, designed to provide wideband Linear Tuning in VCO and filter applications. These diodes feature ceramic glass or thermal oxide
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GC1513
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AT9017-10
Abstract: No abstract text available
Text: AT9017-10 SILICON ABRUPT JUNCTION TUNING VARACTOR DESCRIPTION: PACKAGE STYLE 10 The AT9017-10 is an Epitaxial Silicon Abrupt Junction Microwave Tuning Varactor. This Device is Passivated With Silicon Dioxide Which Results in Very Low Leakage Current. The Capacitance Voltage Relationship
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AT9017-10
AT9017-10
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ct60
Abstract: symbol of varactor diode and equivalent circuit varactor diode notes "Tuning Varactor" varactor APPLICATION AT6021M JC500
Text: AT6021M SILICON ABRUPT JUNCTION TUNING VARACTOR DESCRIPTION: PACKAGE STYLE 15 The ASI AT6021M is an Epitaxial Silicon Abrupt Junction Microwave Tuning Varactor. This Device is Passivated With Silicon Dioxide Which Results in Very Low Leakage Current. The Capacitance Voltage Relationship
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AT6021M
AT6021M
CT0/CT60
CT8/CT60
ct60
symbol of varactor diode and equivalent circuit
varactor diode notes
"Tuning Varactor"
varactor APPLICATION
JC500
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bxy27
Abstract: 2ghz diode BXV27 Frequency Doubler use diode "Varactor Diode" IBB865I varactor ghz power varactor diode 1GHz varactor diode filter
Text: SILICON PLANAR EPITAXIAL VARACTOR DIODE BXY27 Silicon planar epitaxial varactor diode exhibiting step recovery characteristics, especially suitable for use in frequency multiplier circu its up to 'S' band output frequency. It is a diffused silicon device and is mounted in a sm all double-ended ceram ic-m etal
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BXY27
IBB865I
0-03f
BXY27
BXV27
2ghz diode
BXV27
Frequency Doubler use diode
"Varactor Diode"
IBB865I
varactor ghz
power varactor
diode 1GHz
varactor diode filter
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"Varactor Diode"
Abstract: BXY32 varactor diode X-band x5 frequency multiplier
Text: BXY32 SILICON PLANAR EPITAXIAL VARACTOR DIODE T E N T A T IV E D A TA Silicon planar epitaxial varactor diode exhibiting step recovery characteristics, especially suitable for high order frequency multiplier circuits up to X-band output frequency. It is a diffused silicon device and is mounted in a small double-ended ceram ic-m etal
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BXY32
10GHz
to-04
1-70-nom
BXY32
"Varactor Diode"
varactor diode X-band
x5 frequency multiplier
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varactor diode X-band
Abstract: b0930 varactor ghz x-band varactor diode "Varactor Diode" BXY29 mullard power varactor
Text: SILICON PLANAR EPITAXIAL VARACTOR DIODE BXY29 T E N T A T IV E DATA Silicon planar epitaxial v a ra cto r diode exhibiting step reco v ery c h a ra c te ris tic s , esp ecially su itable fo r high ord er frequency m ultiplier circu its-u p to X-band output
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BXY29
25GHz
BXY29
varactor diode X-band
b0930
varactor ghz
x-band varactor diode
"Varactor Diode"
mullard
power varactor
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GVD30422-001
Abstract: No abstract text available
Text: Preliminary Data - January 1999 GVD30400 SERIES SPRAGUE-GOODMAN ELECTRONICS, INC. W IDEBAND HYPERABRUPT TUNING VARACTOR DIODES FEATURES SPECIFICATIONS • Mesa Epitaxial Silicon Construction > Silicon Dioxide Passivated • Superior Wide Range Linear Characteristics
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GVD30400
GVD30422-004
GVD30432-004
GVD30442-004
GVD30422-001
GVD30432-001
GVD30442-001
GVD30452-001
GVD30462-001
OT-23
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Untitled
Abstract: No abstract text available
Text: Preliminary Data - January 1999 GVD30600 SERIES SPRAGIH-GOODMAN ELECTRONICS, INC. W IDEBAND HYPERABRUPT TUNING VARACTOR DIODES FEATURES SPECIFICATIONS « Mesa Epitaxial Silicon Construction • Silicon Dioxide Passivated > Superior Wide Range Linear Characteristics
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GVD30600
GVD30601-004
GVD30602-004
GVD30603-004
GVD30601-001
GVD30602-001
GVD30603-001
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Untitled
Abstract: No abstract text available
Text: SILICON HYPERABRUPT JUNCTION TUNING VARACTOR This series of silicon m icrowave tuning varactors consists of hyperabrupt epitaxial devices. They incorporate a passivated mesa technology. Packaged or chip devices are available for linear electronic tuning up to Ku band.
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