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    EQUIVALENT OF BFT 51 Search Results

    EQUIVALENT OF BFT 51 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMP89FS60AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP64-P-1010-0.50E Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP52-P-1010-0.65 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS60BFG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP64-1414-0.80-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63BUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP52-1010-0.65-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS62AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP44-P-1010-0.80A Visit Toshiba Electronic Devices & Storage Corporation

    EQUIVALENT OF BFT 51 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TC5118160

    Abstract: TC5118160B
    Text: TOSHIBA TC5118160BJ/BFT-60/70 PRELIMINARY 1,048,576 WORD X 16 BIT FAST PAGE DYNAMIC RAM Description The TC 5118160BJ/BFT is the fast page dynamic RAM organized as 1,048,576 w ords by 16 bits. The TC 5118160BJ/BFT utilizes Toshiba's CM OS silicon gate process technology as well as advanced circuit techniques to provide wide operating


    OCR Scan     		PDF TC5118160BJ/BFT-60/70 5118160BJ/BFT 18160BJ/BFT B-127 TC5118160 TC5118160B

    Untitled

    Abstract: No abstract text available
    Text: ^ 7 2 4 0 TOSHIBA QQEÛ37B 54T TC5118165BJ/BFT-60/70 PRELIMINARY 1,048,576 WORD X 16 BIT HYPER PAGE EDO DYNAMIC RAM in Description The T C 5118165BJ/BFT is the hyper page (EDO) dynamic RAM organized 1,048,576 w ords by 16 bits. The TC 5118165BJ/ BFT utilizes Toshiba's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operat­


    OCR Scan     		PDF TC5118165BJ/BFT-60/70 5118165BJ/BFT 5118165BJ/ DR16160695

    tc5118180bj

    Abstract: tc5118180 equivalent of BFT 51 8180b TC5118180B
    Text: TOSHIBA TC5118180BJ/BFT-60/70 PRELIMINARY 1,048,576 WORD X 16 BIT FAST PAGE DYNAMIC RAM Description The T C 51 18180BJ/BFT is the fast page dynamic RAM organized as 1,048,576 w ords by 18 bits. The TC 5118180BJ/BFT utilizes Toshiba’s CM OS silicon gate process technology as well as advanced circuit techniques to provide wide operating


    OCR Scan     		PDF TC5118180BJ/BFT-60/70 18180BJ/BFT 5118180BJ/BFT B-155 tc5118180bj tc5118180 equivalent of BFT 51 8180b TC5118180B

    Untitled

    Abstract: No abstract text available
    Text: 1 ,048,576 W O R D x PRELIMINARY 1 BIT D Y N A M IC R A M DESCRIPTION 511000 The TC BP/BJ/BZ/BFT is the new generation dynamic RAM organized 1,048,576 words by 1 bit. The TC511000BP/BJ/BZ/BFT utilizes TOSHIBA’S CMOS Silicon gate process technology as well as


    OCR Scan     		PDF TC511000BP/BJ/BZ/BFT TC5110OOBP/BJ /BZ/BFT-60

    TC5118160B

    Abstract: No abstract text available
    Text: TOSHIBA clüi:î7E4fi 0 0 20 3 0 1 552 • TC5118160BJ/BFT-60/70 PRELIMINARY 1,048,576 WORD X 16 BIT FAST PAGE DYNAMIC RAM Description Features 16M The TC 5118160BJ/BFT is the fast page dynamic RAM organized as 1,048,576 w ords by 16 bits. The T C 51 18160BJ/BFT


    OCR Scan     		PDF TC5118160BJ/BFT-60/70 5118160BJ/BFT 18160BJ/BFT 0D2fi367 TC5118160B

    Untitled

    Abstract: No abstract text available
    Text: INTEGRATED CIRCUIT TOSHIBA TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC514280BJ / BZ / BFT / BTR - 70 TC514280BJ / BZ / BFT / BTR - 80 TC514280BJ / BZ / BFT / BTR - 1 0 SILICON GATE CMOS TECHNICAL DATA TENTATIVE DATA 262,144 WORD x 18 BIT DYNAMIC RAM DESCRIPTION


    OCR Scan     		PDF TC514280BJ TC514280BJ/BZ/BFT/BTR TC514280B

    Untitled

    Abstract: No abstract text available
    Text: INTEGRATED CIRCUIT TOSHIBA TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC514260BJ / BZ/ BFT/ BTR - 70 TC514260BJ / BZ / BFT / BTR - 80 TC514260BJ / BZ / BFT / BTR -1 0 SILICON GATE CMOS TECHNICAL DATA TENTATIVE DATA 262,144 W ORD x 16 BIT DYNAM IC RAM DESCRIPTION


    OCR Scan     		PDF TC514260BJ TC514260BJ/BZ/BFT/BTR TC514260BJâ

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TCH TSH ñ 0 0 2 0 4 1 3 • TC5118325BJ/BFT-70 PRELIMINARY 524,288 WORD X 32 BIT EDO DYNAMIC RAM Description Features 16M The T C 51 18325BJ/BFT is the Hyper Page Mode (EDO) dynamic RAM organized 524,288 w ords by 32 bits. The T C 51 18325BJ/BFT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to pro­


    OCR Scan     		PDF TC5118325BJ/BFT-70 18325BJ/BFT 5118325B 400mil) I/032

    Untitled

    Abstract: No abstract text available
    Text: m 'i[m24û D02ô4Db 752 m- TOSHIBA TC5118180BJ/BFT-60/70 PRELIMINARY 1,048,576 WORD X 16 BIT FAST PAGE DYNAMIC RAM Description TheTC 5118180BJ/B FT is the fast page dynamic RAM organized as 1,048,576 w ords by 18 bits. TheTC 5118180BJ/B FT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating


    OCR Scan     		PDF m--------------24Ã TC5118180BJ/BFT-60/70 5118180BJ/B 5118180BJ/BFT QDBBH12

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC5118320BJ/BFF60/70 PRELIMINARY 524,288 WORD X 32 BIT DYNAMIC RAM Description TheT C 5118320B J/B FT is the new generation dynamic RAM organized 524,288 w ords by 18 bits. T heT C 5118320B J/B FT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating


    OCR Scan     		PDF TC5118320BJ/BFF60/70 5118320B TC5118320BJ/BFT 400mil) I/024 I/032

    TC5118165

    Abstract: TC5118165BFT
    Text: INTEGRATED TO SH IB A M O S D IG ITA L INTEG RATED CIRCUIT CIRCUIT T C 5 1 1 8 1 6 5 BJ / B F T - 60 T C 5 1 1 8 1 6 5 BJ / BFT - 70 TOSHIBA TECHNICAL TE N TA TIV E D A T A 1 ,0 4 8 ,5 7 6 W O R D x DATA SILICON GATE C M O S 16 BIT HYPER PAGE ED O D Y N A M IC R A M


    OCR Scan     		PDF TC5118165BJ/BFT TC511 SOJ42 TC5118165BJ-32 TC5118165 35MAX TC5118165BFT

    T0141

    Abstract: TC514260BJ
    Text: SILICON GATE CMOS DIGITAL INTEGRATED CIRCUIT TC514260BJ/BZ/BFT-7 0,-80 TENTATIVE DATA 262,144 W O RD x 16 BIT DYNAM IC RAM DESCRIPTION The TC514260BJ/BZ/BFT is the new generation dynamic RAM organized 262,144 words by 16 bits. The TC514260BJ/BZ/BFT utilizes TOSHIBA'S CMOS Silicon, gate process technology as well as


    OCR Scan     		PDF TC514260BJ/BZ/BFT-7 TC514260BJ/BZ/BFT TC514260BJ/BZ/BFT-70, -I/016 T0141 TC514260BJ

    TC51V17405

    Abstract: No abstract text available
    Text: TOSHIBA TC51V17405BST-60/70 PRELIMINARY 4,194,304 WORD X 4 BIT EDO HYPER PAGE DYNAMIC RAM Description The TC51V17405BSJ/BFT is an EDO (hyper page) dynamic RAM organized as 4,194,304 w ords by 4 bits. The TC51V17405BSJ/BFT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to


    OCR Scan     		PDF TC51V17405BST-60/70 TC51V17405BSJ/BFT 300mil) TC51V17405

    Untitled

    Abstract: No abstract text available
    Text: 1,048,576 W O RD x PRELIMINARY 1 BIT DYN AM IC RAM D E SC R IP T IO N The TC511001BP/BJ/BZ/BFT is the new generation dynamic RAM organized 1,048,576 words by 1 bit. The TC511001BP/BJ/BZ/BFT utilizes TOSHIBA’S CMOS Silicon gate process technology as well as


    OCR Scan     		PDF TC511001BP/BJ/BZ/BFT TC511001BP/BJ/BZ/BFT-60

    TC51V16325B

    Abstract: MJ-13
    Text: TOSHIBA TC51V16325BJ/BFT-70 PRELIMINARY 524,288 WORD X 32 BIT EDO DYNAMIC RAM Description The TC51V16325BJ/BFT is the Hyper Page Mode (EDO) dynamic RAM organized 524,288 words by 32 bits. The TC51V16325BJ/BFT utilizes Toshiba's CMOS silicon gate process technology as well as advanced circuit techniques to pro­


    OCR Scan     		PDF TC51V16325BJ/BFT-70 TC51V16325BJ/BFT TC51V16325BJ/ 400mil) I/024 I/025 I/032 TC51V16325B MJ-13

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY 2 6 2 ,1 4 4 W O R D x 4 BIT D Y N A M IC R A M D ESC R IPTIO N The TC514266BP/BJ/BZ/BFT is the new generation dynamic RAM organized 262,144 words by 4 bits. The TC514266BP/BJ/BZ/BFT utilizes TOSHIBA’S CMOS Silicon gate process technology as well as


    OCR Scan     		PDF TC514266BP/BJ/BZ/BFT

    BE423

    Abstract: No abstract text available
    Text: TOSHIBA TC5118325BJ/BFT-70 PRELIMINARY 524,288 WORD X 32 BIT EDO DYNAMIC RAM Description The TC5118325BJ/BFT is the Hyper Page Mode (EDO) dynamic RAM organized 524,288 words by 32 bits. The TC5118325BJ/BFT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to pro­


    OCR Scan     		PDF TC5118325BJ/BFT-70 TC5118325BJ/BFT TC5118325BJ/ 400mil) I/024 I/025 I/032 BE423

    TC51V18325BJ

    Abstract: No abstract text available
    Text: TOSHIBA TC51V18325BJ/BFIW70 PRELIMINARY 524,288 WORD X 32 BIT EDO DYNAMIC RAM Description The TC51V18325BJ/BFT' is the Hyper Page Mode (EDO) dynamic RAM organized 524,288 words by 32 bits. The TC51V18325BJ/BFT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to


    OCR Scan     		PDF TC51V18325BJ/BFIW70 TC51V18325BJ/BFT' TC51V18325BJ/BFT 400mil) DR16230995 I/024 I/025 I/032 TC51V18325BJ

    tc511000

    Abstract: TS0P24-P-Q616 tc511000bp tc511000b 511000 dram
    Text: 1,048,576 W O R D x PRELIMINARY 1 BIT D Y N A M IC RAM DESCRIPTION The TC511000BP/BJ/BZ/BFT is the new generation dynamic RAM organized 1,048,576 words by 1 bit. The TC511000BP/BJ/BZ/BFT utilizes TOSHIBA’S CMOS Silicon gate process technology as well as


    OCR Scan     		PDF TC511000BP/BJ/BZ/BFT TC5110OOBP/BJ/BZ/BFT-60 tc511000 TS0P24-P-Q616 tc511000bp tc511000b 511000 dram

    Untitled

    Abstract: No abstract text available
    Text: q0^724fl 0020422 RTS TOSHIBA TC51V16325BJ/BFT-70 PRELIMINARY 524,288 WORD X 32 BIT EDO DYNAMIC RAM Description The TC51V16325BJ/BFT is the Hyper Page Mode (EDO) dynamic RAM organized 524,288 words by 32 bits. The TC51V16325BJ/BFT utilizes Toshiba’s CMOS silicon gate process technology as weil as advanced circuit techniques to pro­


    OCR Scan     		PDF 724fl TC51V16325BJ/BFT-70 TC51V16325BJ/BFT 16325B 400mil)

    256KDRAM

    Abstract: st A122 a124 es
    Text: PRELIMINARY 1,048,576 W O RD x 1 BIT DYNAMIC RAM DESCRIPTION The TC511002BP/BJ/BZ/BFT is the new generation dynamic RAM organized 1,048,576 words by 1 bit. The TC511002BP/BJ/BZ/BFT utilizes TOSHIBA’S CMOS Silicon gate process technology as well as advanced circuit techniques to provide wide operating m argins, both internally and to the system user.


    OCR Scan     		PDF TC511002BP/BJ/BZ/BFT TC511002BP/BJ/BZ/BFT-60 256KDRAM st A122 a124 es

    TC514266

    Abstract: No abstract text available
    Text: PRELIMINARY 2 6 2 , 1 4 4 \ vCi <L- k 4 i ' T' L ; Y ' ; a !V":C ?, a w ! D ESC RIPTIO N T he "I C i i i -T 7. b i: * .„h? new g ^ r.crau o n dynam ic HAM organized 262,144 words by 4 bits. T he TC51.4-r;i-!BP.BJ,'BZ.“siF;' .• 1 : > TOSHIBA'S CMOS Silicon gate process technology as well as


    OCR Scan     		PDF 14266BP/BJ/BZ/BFT TC514266

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA THL64V8015BTG-4f-5,-4Sf-5S TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,608-WORD BY 64-BIT DYNAMIC RAM MODULE DESCRIPTION The TH L64V8015BTG is a 8,388,608-w ord by 64-bit dynamic RAM module consisting of eight T C 5165805BFT/BFTS DRAMs on a printed circuit board. This module is optimized for applications


    OCR Scan     		PDF THL64V8015BTG-4f-5 608-WORD 64-BIT L64V8015BTG 608-w 5165805BFT/BFTS

    khs 313

    Abstract: No abstract text available
    Text: TOSHIBA THM65V8015BTG-4f-5 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,608-WORD BY 64-BIT DYNAMIC RAM MODULE DESCRIPTION The THM 65V8015BTG is a 8,388,608-word by 64-bit dynamic RAM module consisting of eight T C 5165805B FT DRAMs on a printed circuit board. This module is optimized for applications which


    OCR Scan     		PDF THM65V8015BTG-4f-5 608-WORD 64-BIT 65V8015BTG 5165805B 608-w khs 313