Mini-circuits marking code
Abstract: VV105 ERA-3SM 99 ERA-3SM E3 monolithic ERA 5 ERA monolithic amplifier WW107 ERA-2SM E2 era-3 e3 era12
Text: MONOLITHIC AMPLIFIERS 50Ω Drop-In & Surface Mount BROADBAND DC to 8 GHz ERA ERA-SM All specifications at 25°C J FREQ. GHz MODEL NO. ERA-1 ERA-2 ERA-3 ERA-4 99 99 99 99 ERA-1SM ERA-2SM ERA-3SM ERA-4SM 99 99 99 99 GAIN, dB Typical over frequency, GHz THERMAL
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M106237
Mini-circuits marking code
VV105
ERA-3SM 99
ERA-3SM E3
monolithic ERA 5
ERA monolithic amplifier
WW107
ERA-2SM E2
era-3 e3
era12
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Mini-circuits marking code
Abstract: No abstract text available
Text: Monolithic Amplifiers Broadband 50Ω Drop-In & Surface Mount DC to 8 GHz ERA ERA-SM All specifications at 25°C GAIN, dB Typical FREQ. GHz MODEL NO. over frequency, GHz fl - fu ERA-1 99+ ERA-2 99+ ERA-3 99+ ERA-1SM 99+ DC-8 ERA-2SM 99+ DC-6 ERA-3SM 99+ DC-3
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M128455
Mini-circuits marking code
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Mini-Circuits ERA-1SM
Abstract: ERA-3SM 99 marking E5 amplifier ERA-4SM nf 3SM diode cb amplifier ERA-1SM ERA-4SM marking code k1 ERA-3SM E3
Text: MONOLITHIC AMPLIFIERS BROADBAND 50Ω Drop-In & Surface Mount DC to 8 GHz ERA ERA-SM All specifications at 25°C J FREQ. GHz MODEL NO. fl - fu GAIN, dB Typical over frequency, GHz 0.1 1 2 3 4 6 8 MAXIMUM DYNAMIC POWER, dBm RANGE at 2 GHz* at 2 GHz* TANCE see
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12Years)
Mini-Circuits ERA-1SM
ERA-3SM 99
marking E5 amplifier
ERA-4SM nf
3SM diode
cb amplifier
ERA-1SM
ERA-4SM
marking code k1
ERA-3SM E3
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marking E5 amplifier
Abstract: ERA monolithic amplifier vv105 mini ERA-3SM VV105 3SM diode ERA-4 ERA-1 ERA-4SM nf ERA-6SM
Text: MONOLITHIC AMPLIFIERS 50Ω Drop-In & Surface Mount BROADBAND DC to 8 GHz ERA ERA-SM All specifications at 25°C J FREQ. GHz MODEL NO. fl - fu GAIN, dB Typical over frequency, GHz 0.1 1 2 3 4 6 8 THERMAL RESISat 2 GHz* at 2 GHz* TANCE Output In Out θjc,
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e6xx
Abstract: alphanumeric
Text: MONOLITHIC AMPLIFIERS 50Ω Drop-In & Surface Mount BROADBAND DC to 8 GHz ERA ERA-SM All specifications at 25°C J MAXIMUM DYNAMIC POWER dBm RANGE at 2 GHz* at 2 GHz* GAIN , dB Typical FREQ. GHz MODELu NO. 0.1 f L - fU 1 over frequency, GHz 2 3 4 6 8
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ERA-3SM E3
Abstract: era-3 e3 ERA-2SM E2 ERA-3SM 03 ERA-6 Mini-Circuits RF Amplifier
Text: MONOLITHIC AMPLIFIERS BROADBAND 50Ω Drop-In & Surface Mount DC to 8 GHz ERA ERA-SM All specifications at 25°C J FREQ. GHz MODEL fl - fu NO. GAIN, dB Typical over frequency, GHz 0.1 1 2 3 4 6 8 MAXIMUM POWER, dBm at 2 GHz* DYNAMIC RANGE at 2 GHz* Output
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vv105
Abstract: era-3 e3 ERA-3SM E3
Text: MONOLITHIC AMPLIFIERS 50Ω Drop-In & Surface Mount BROADBAND DC to 8 GHz ERA ERA-SM All specifications at 25°C J FREQ. GHz MODEL fl - fu NO. GAIN, dB Typical over frequency, GHz 0.1 1 2 3 4 6 8 MAXIMUM POWER, dBm at 2 GHz* DYNAMIC RANGE at 2 GHz* Output
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Untitled
Abstract: No abstract text available
Text: C 3 M ini-Circuits* M A m plifiers onolithic 50Q Drop-In & Surface M ount B roadband DC to 8 GHz r> All specificotions o f 25°C G A IN , dB Typical Ö FREQ. GHz a t 2 G H z* Output Flatness 1 dB Input M in . DCC om p. (no 2 G H z 2 GHz Typ. Min. dm g.)
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Untitled
Abstract: No abstract text available
Text: Mini-Circuits* M o n o lith ic A m p lifie r s 50Q Drop-In & Surface Mount B roadband DC to 8 GHz All specifications at 25°C G A IN . dB T y p ic a l Ö FREQ GHz ovei frequency, GHz MODEL NO. ERA-1 ERA-2 ERA-3 H , 0.1 1 2 3 4 6 8 D C -8 12.2 12.1 11.8 11.5 11.3 11.0 10.2
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Untitled
Abstract: No abstract text available
Text: M onolithic A m plifier s 50Q Drop-In & Surface Mount Broadband DCto8 GHz V- ERA ERA-SM All specifications at 25°C GAIN, dB Typical POWER, dBm m over frequency, GHz MODEL NO- f,'fu 0.1 1 2 ERA-1 ERA-2 ERA-3 ERA-4 ERA-5 DC-8 DC-6 DC-3 DC-4 DC-4 11.8 16.0
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0257S2
Abstract: No abstract text available
Text: AMD-K6-III Processor Data Sheet AMD Z\ D i 02575E5 QDLBE72 41fl B 1999 Advanced Micro Devices, Inc. A ll rig h ts reserv ed . The contents of this docum ent are provided in connection w ith A dvanced Micro D evices, Inc. "AMD" products. AMD m akes no representations or w arranties w ith
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02575E5
QDLBE72
D257525
21918B/0-October
00bfl5li7
0257S2
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triac zd 607
Abstract: hep c6004 2sb504 2SC 968 NPN Transistor sje 607 motorola c6004 diode BY127 specifications K872 af118 Motorola Semiconductor hep c3806p
Text: & SEM ICO N DU CTO R This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Professional service techni cian. The information contained herein is based on an analysis of the published
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thT404
ZV15A
ZY33A
ZT696
ZV15B
ZY33B
ZT697
ZT706
ZV27A
ZY62A
triac zd 607
hep c6004
2sb504
2SC 968 NPN Transistor
sje 607
motorola c6004
diode BY127 specifications
K872
af118
Motorola Semiconductor hep c3806p
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7915a
Abstract: yx 801 TFK ad 164 H13-31C st z7s SCR 131- 6 WJ 60 ic stk 432 090 LHi 878 34B SOT rjh ah
Text: ? — S • £ / — h NEC Í Í T / \ f Z 4 t ’7 h • '> > $ ^ P D 1 7 0 0 5 l i , T-V i> 9 \s • v -f ? □ zi > ' y ~ f • ~7 >f ^ □ □ > Y P — 5 • - > * x A f f l / \ - K ^ X T7 ^ |* lil L fc 4 t'- y h • > > 7¡\s3- y 7° C M O S h P -7 T -ÎO
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uPD17005
7915a
yx 801
TFK ad 164
H13-31C
st z7s
SCR 131- 6 WJ 60
ic stk 432 090
LHi 878
34B SOT
rjh ah
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