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    ERICSSON RF POWER TRANSISTOR Search Results

    ERICSSON RF POWER TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    ERICSSON RF POWER TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TRANSISTOR cBC 415

    Abstract: Inside the RF Power Transistor PTB20105 RF POWER TRANSISTOR RF Transistor Selection transistor theory ericsson rf
    Text: e Inside the RF Power Transistor Prepared by Ted Johansson, Dr. Tech. Process and Device Design, Business Center RF Power, Ericsson Components AB, Kista, Sweden Introduction The purpose of this application note is to show some of the chip level design considerations and technical details


    Original     		PDF TED-21, TRANSISTOR cBC 415 Inside the RF Power Transistor PTB20105 RF POWER TRANSISTOR RF Transistor Selection transistor theory ericsson rf

    1415 ic

    Abstract: 33 pf capacitor PTB20173 RF NPN POWER TRANSISTOR 3 GHZ 200 watts
    Text: ERICSSON ^ PTB 20173 60 Watts, 1.4-1.5 GHz RF Power Transistor Description The 20173 is a preliminary class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation across 1.4 to 1.5 GHz frequency band. It is rated at 60 watts minimum output power and


    OCR Scan     		PDF 0093X2 G-200 1415 ic 33 pf capacitor PTB20173 RF NPN POWER TRANSISTOR 3 GHZ 200 watts

    RF NPN POWER TRANSISTOR 3 GHZ

    Abstract: RF NPN POWER TRANSISTOR 3 GHZ 200 watts
    Text: ERICSSON ^ PTE 20173* 60 Watts, 1.4-1.5 GHz RF Power Transistor Description The 20173 is a preliminary class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation across 1.4 to 1.5 GHz frequency band. It is rated at 60 watts minimum output power and


    OCR Scan     		PDF G-200 RF NPN POWER TRANSISTOR 3 GHZ RF NPN POWER TRANSISTOR 3 GHZ 200 watts

    transistor 20201

    Abstract: jarvis
    Text: ERICSSON ^ PTB 20176 5 Watts, 1.78-1.92 GHz RF Power Transistor Description The 20176 is a common emitter RF power transistor intended for 26 Vdc operation from 1.78 to 1.92 GHz. Rated at 5 watts minimum output power, it is specifically designed for class A or AB linear power


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    Untitled

    Abstract: No abstract text available
    Text: ERICSSON ^ PTB 20029 1.5 Watts, 420 - 470 MHz UHF RF Power Transistor Key Features Description The 20029 is a class AB, NPN, common emitter RF Power Transistor intended for 24 VDC operation across the 420470 MHz frequency band. It is rated at 1.5 Watts minimum


    OCR Scan     		PDF 200mA

    Untitled

    Abstract: No abstract text available
    Text: ERICSSON ^ PTB 20176 5 Watts, 1.78-1.92 GHz RF Power Transistor Description The 20176 is a common emitter RF power transistor intended for 26 Vdc operation from 1.78 to 1.92 GHz. Rated at 5 watts minimum output power, it is specifically designed for class A or AB linear power


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    Untitled

    Abstract: No abstract text available
    Text: ERICSSON ^ PTB 20167 60 Watts, 850-960 MHz RF Power Transistor Description The 20167 is an NPN, common base RF power transistor intended for 24 Vdc operation from 850 to 960 MHz. Rated at 60 watts minimum output power, it is specifically designed for class C power amplifier


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    tic6064

    Abstract: 850-960MHz
    Text: ERICSSON $ PTB 20167 60 Watts, 850-960 MHz RF Power Transistor D escription The 20167 is an NPN, common base RF power transistor intended for 24 Vdc operation from 850 to 960 MHz. Rated at 60 watts minimum output power, it is specifically designed for class C power amplifier


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    Untitled

    Abstract: No abstract text available
    Text: ERICSSON ^ PTB 20003 4 Watts, 915-960 MHz Cellular Radio RF Power Transistor Description Key Features The 20003 is a class AB, NPN, common emitter RF Power Transistor intended for 25 VDC operation across the 915-960 MHz frequency band. It is rated at 4 Watts minimum output power


    OCR Scan     		PDF 915-960MHz)

    Untitled

    Abstract: No abstract text available
    Text: ERICSSON ^ PTB 20191 12 Watts, 1.78-1.92 GHz RF Power Transistor Description The 20191 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.78 to 1.92 GHz. It is rated at 12 watts CW minimum output power, or 15 watts (PEP) output power.


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    L450A

    Abstract: NPN transistor 5 watts Ericsson RF POWER TRANSISTOR
    Text: ERICSSON ^ PTE 20231 * 18 Watts, 2.1-2.2 GHz Cellular Radio RF Power Transistor Description The 20231 isaclassA/AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 2.1 to 2.2 GHz. Bated at 18 watts minimum output power in class AB and 8 watts minimum output power


    OCR Scan     		PDF G-200. BCP56 L450A NPN transistor 5 watts Ericsson RF POWER TRANSISTOR

    Untitled

    Abstract: No abstract text available
    Text: ERICSSON ^ PTB 20174 90 Watts, 1400-1600 MHz RF Power Transistor Description The 20174 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation across the 1400 to 1600 MHz frequency band. Rated at 90 watts minimum output power, it may be used for


    OCR Scan     		PDF 5801-PC

    transistor Pout 5W

    Abstract: No abstract text available
    Text: ERICSSON ^ PTB 201 59 5 Watts, 900 MHz RF Power Transistor Preliminary Description Key Features The 20159 is NPN, common emitter RF Power Transistor intended for 24VDC operation across the 850-960 MHz frequency band. It is rated at 5 Watts minimum output power and may be used for


    OCR Scan     		PDF 24VDC 900MHz) transistor Pout 5W

    TRANSISTOR 185

    Abstract: Ericsson RF POWER TRANSISTOR
    Text: ERICSSON ^ PTE 20124* 40 Watts, 1.465-1.513 GHz Cellular Radio RF Power Transistor Description The 20124 is an NPN common emitter RF power transistor intended for 26 Vdc class AB operation from 1.45 to 1.52 GHz. Rated at 40 watts minimum output power, it is specifically intended for cellular


    OCR Scan     		PDF BAV99 TRANSISTOR 185 Ericsson RF POWER TRANSISTOR

    transistor tic 226

    Abstract: No abstract text available
    Text: ERICSSON ^ PTB 20220 15 Watts, 915-960 MHz Cellular Radio RF Power Transistor Description The 20220 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation across the 915 to 960 MHz frequency band. Rated at 15 watts minimum output power for PEP applications,


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    20224

    Abstract: No abstract text available
    Text: ERICSSON ^ PTB 20017 150 Watts, 860-900 MHz Cellular Radio RF Power Transistor Description The 20017 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation across the 860 to 900 MHz cellular radio frequency band. Rated at 150 watts minimum output power, it


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    Untitled

    Abstract: No abstract text available
    Text: ERICSSON ^ PTB 20004 50 Watts, 860 - 900 MHz Cellular Radio RF Power Transistor Description Key Features The 20004 is a class AB, NPN, common emitter RF Power Transistor intended for 25 VDC operation across the860-900 MHz frequency band. It is rated at 50 Watts minimum output power


    OCR Scan     		PDF the860-900 200mA

    Untitled

    Abstract: No abstract text available
    Text: ERICSSON ^ E 20080* 25 Watts, 1.6-1.7 GHz RF Power Transistor Description The 20080 is a class A/AB, NPN, silicon bipolar junction, internallymatched RF power transistor intended for 26 Vdc operation from 1.6 to 1.7 GHz. It is rated at 25 Watts minimum output power for PEP


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    Untitled

    Abstract: No abstract text available
    Text: ERICSSON 9 PTB 20135 85 Watts,925-960 MHz Cellular Radio RF Power Transistor Description Key Features The 20135 is a class AB, NPN common emitter RF Power Transistor intended for 26 VDC operation across 925-960 MHz frequency band. It is rated at 85 Watts minimum output power


    OCR Scan     		PDF -30dBc 960MHz)

    20191

    Abstract: No abstract text available
    Text: ERICSSON $ PTB 20191 12 Watts,1.78 -1.92 GHz RF Power Transistor Preliminary Key Features Description The 20191 is a class AB RF Power Transistor intended for 26 VDC operation across 1.78-1.92 GHz frequency band. It is rated at 12 Watts minimum output power (CW) or 15 Watts output power (PEP).


    OCR Scan     		PDF 100mA 20191

    Untitled

    Abstract: No abstract text available
    Text: ERICSSON PTB 20074 14 Watts, 1477-1501 MHz Cellular Radio RF Power Transistor Key Features Description The 20074 is a class AB, NPN, common emitter RF Power Transistor intended for 26 VDC operation across the 14771501 MHz frequency band. It is rated at 14 Watts minimum


    OCR Scan     		PDF 26Vdc,

    InMarSat power

    Abstract: No abstract text available
    Text: ERICSSON ^ PTB 20079 10 Watts, 1.6-1.7 GHz INMARSAT RF Power Transistor Description The 20079 is a class A/AB, NPN, silicon bipolar junction, internallymatched, common emitter RF Power transistor intended for 26 Vdc operation across 1.6 to 1.7 GHz frequency band. It is rated at 10


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    26VDC

    Abstract: No abstract text available
    Text: ERICSSON ^ PTB 20046 1 Watts, 1477-1501 MHz Cellular Radio RF Power Transistor Description Key Features The 20046 is a class AB, NPN, common emitter RF Power Transistor intended for 26 VDC operation across the 14771501 MHz frequency band. It is rated at 1 Watts minimum


    OCR Scan     		PDF 26Vdc, 26VDC

    Untitled

    Abstract: No abstract text available
    Text: ERICSSON ^ PTB 20095 15 Watts, 915-960 MHz Cellular Radio RF Power Transistor Description The 20095 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation across the 915 to 960 MHz frequency band. Rated at 15 watts minimum output power, it may be used for


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