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    EUDYNA GAAS FET Search Results

    EUDYNA GAAS FET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    RJF0411JPD-00#J3 Renesas Electronics Corporation Thermal FETs Visit Renesas Electronics Corporation
    RJF0411JPD-01#J3 Renesas Electronics Corporation Thermal FETs Visit Renesas Electronics Corporation
    RJF0605JPV-00#Q7 Renesas Electronics Corporation Thermal FETs Visit Renesas Electronics Corporation
    ISL95901IRZ-T Renesas Electronics Corporation Integrated FET Regulators Visit Renesas Electronics Corporation
    ISL6146DFRZ Renesas Electronics Corporation Low Voltage ORing FET Controller Visit Renesas Electronics Corporation

    EUDYNA GAAS FET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    L-Band

    Abstract: No abstract text available
    Text: FLL120MK L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 40.0dBm Typ. High Gain: G1dB = 10.0dB (Typ.) High PAE: ηadd = 40% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL120MK is a Power GaAs FET that is specifically designed to


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    PDF FLL120MK FLL120MK L-Band

    C-Band Power GaAs FET

    Abstract: No abstract text available
    Text: FLC257MH-6 C-Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 34.0dBm Typ. High Gain: G1dB = 9.0dB(Typ.) High PAE: ηadd = 36%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLC257MH-6 is a power GaAs FET that is designed for general


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    PDF FLC257MH-6 FLC257MH-6 C-Band Power GaAs FET

    FLK057WG

    Abstract: No abstract text available
    Text: FLK057WG X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 27.0dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 32%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLK057WG is a power GaAs FET that is designed for general


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    PDF FLK057WG FLK057WG

    EUDYNA

    Abstract: No abstract text available
    Text: FLU17XM L-Band Medium & High Power GaAs FET FEATURES • High Output Power: P1dB=32.5dBm Typ. • High Gain: G1dB=13.5dB (Typ.) • High PAE: ηadd=46% (Typ.) • Hermetic Metal/Ceramic (SMT) Package • Tape and Reel Available DESCRIPTION The FLU17XM is a GaAs FET designed for base station applications in the


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    PDF FLU17XM FLU17XM EUDYNA

    Untitled

    Abstract: No abstract text available
    Text: FLC157XP GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 31.5dBm Typ. High Gain: G1dB = 6.0dB(Typ.) High PAE: ηadd = 29.5%(Typ.) Proven Reliability Drain DESCRIPTION Drain Gate The FLC157XP chip is a power GaAs FET that is designed for


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    PDF FLC157XP FLC157XP

    FLU35XM

    Abstract: Eudyna Devices
    Text: FLU35XM L-Band Medium & High Power GaAs FET FEATURES • High Output Power: P1dB=35.5dBm Typ. • High Gain: G1dB=12.5dB (Typ.) • High PAE: ηadd=46% (Typ.) • Hermetic Metal/Ceramic (SMT) Package • Tape and Reel Available DESCRIPTION The FLU35XM is a GaAs FET designed for base station applications in the


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    PDF FLU35XM FLU35XM V4888 Eudyna Devices

    GaAs FET HEMT Chips

    Abstract: FLC307XP C-Band Power GaAs FET HEMT Chips
    Text: FLC307XP GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 34.8dBm Typ. High Gain: G1dB = 9.5dB(Typ.) High PAE: ηadd = 37%(Typ.) Proven Reliability Drain DESCRIPTION Drain Drain Gate Gate Drain Gate Gate Source Source The FLC307XP chip is a power GaAs FET that is designed for


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    PDF FLC307XP FLC307XP Conditi4888 GaAs FET HEMT Chips C-Band Power GaAs FET HEMT Chips

    FLL410IK-4C

    Abstract: ED-4701 eudyna GaAs FET Eudyna Devices power amplifiers
    Text: FLL410IK-4C L-Band High Power GaAs FET FEATURES ・High Output Power: Pout=46.0dBm Typ. ・High Gain: GL=11.5dB(Typ.) ・High PAE: ηadd=44%(Typ.) ・Broad Band: 3.4~3.7GHz ・Hermetically Sealed Package DESCRIPTION The FLL410IK-4C is a partially matched 40 Watt GaAs FET that is


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    PDF FLL410IK-4C FLL410IK-4C ED-4701 eudyna GaAs FET Eudyna Devices power amplifiers

    FLL57MK

    Abstract: No abstract text available
    Text: FLL57MK L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 36.0dBm Typ. High Gain: G1dB = 11.5dB (Typ.) High PAE: ηadd = 37% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL57MK is a Power GaAs FET that is specifically designed to


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    PDF FLL57MK FLL57MK

    Untitled

    Abstract: No abstract text available
    Text: FLK017WF X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 20.5dBm Typ. High Gain: G1dB = 7.5dB(Typ.) High PAE: ηadd = 26%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLK017WF is a power GaAs FET that is designed for general


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    PDF FLK017WF FLK017WF

    Untitled

    Abstract: No abstract text available
    Text: FLC317MG-4 C-Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 34.8dBm Typ. High Gain: G1dB = 9.5dB(Typ.) High PAE: ηadd = 37%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLC317MG-4 is a power GaAs FET that is designed for


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    PDF FLC317MG-4 FLC317MG-4

    FLL177ME

    Abstract: Eudyna Devices 0.1 j100
    Text: FLL177ME L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB=32.5dBm Typ. High Gain: G1dB=12.5dB (Typ.) High PAE: ηadd=46% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL177ME is a Power GaAs FET that is specifically designed to


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    PDF FLL177ME FLL177ME Temperat4888 Eudyna Devices 0.1 j100

    Untitled

    Abstract: No abstract text available
    Text: FLM1414-4F Internally Matched Power GaAs FET FEATURES • • • • • • • High Output Power: P1dB = 36.0dBm Typ. High Gain: G1dB = 6.0dB (Typ.) High PAE: ηadd = 27% (Typ.) Low IM3 = -46dBc@Po = 25.5dBm (Typ.) Broad Band: 14.0 ~ 14.5GHz Impedance Matched Zin/Zout = 50Ω


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    PDF FLM1414-4F -46dBc FLM1414-4F

    FLC087XP

    Abstract: No abstract text available
    Text: FLC087XP GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 28.5dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 31.5%(Typ.) Proven Reliability Drain DESCRIPTION The FLC087XP chip is a power GaAs FET that is designed for general


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    PDF FLC087XP FLC087XP

    Untitled

    Abstract: No abstract text available
    Text: FLX107MH-12 X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 30.0dBm Typ. High Gain: G1dB = 7.5dB(Typ.) High PAE: ηadd = 33%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLX107MH-12 is a power GaAs FET that is designed for general


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    PDF FLX107MH-12 FLX107MH-12

    FLX207MH-12

    Abstract: MH 1051
    Text: FLX207MH-12 X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 32.5dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 28%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLX207MH-12 is a power GaAs FET that is designed for general


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    PDF FLX207MH-12 FLX207MH-12 MH 1051

    Untitled

    Abstract: No abstract text available
    Text: FSX027WF General Purpose GaAs FET FEATURES • • • • Medium Power Output: P1dB=24.5dBm Typ. @8.0GHz High Power Gain: G1dB=10dB(Typ.)@8.0GHz Hermetic Metal/Ceramic Package Proven Reliability DESCRIPTION The FSX027WF is a general purpose GaAs FET designed for medium


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    PDF FSX027WF FSX027WF 12GHz.

    Untitled

    Abstract: No abstract text available
    Text: FLM1414-3F Internally Matched Power GaAs FET FEATURES • • • • • • • High Output Power: P1dB = 35dBm Typ. High Gain: G1dB = 6.5dB (Typ.) High PAE: ηadd = 27% (Typ.) Low IM3 = -46dBc@Po = 24.0dBm (Typ.) Broad Band: 14.0 ~ 14.5GHz Impedance Matched Zin/Zout = 50Ω


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    PDF FLM1414-3F 35dBm -46dBc FLM1414-3F

    Untitled

    Abstract: No abstract text available
    Text: FLM1415-6F Internally Matched Power GaAs FET FEATURES • • • • • • • High Output Power: P1dB = 37.0dBm Typ. High Gain: G1dB = 5.5dB (Typ.) High PAE: ηadd = 20% (Typ.) Low IM3 = -45dBc@Po = 26.0dBm (Typ.) Broad Band: 14.5 ~ 15.3GHz Impedance Matched Zin/Zout = 50Ω


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    PDF FLM1415-6F -45dBc FLM1415-6F

    L-Band

    Abstract: No abstract text available
    Text: FLL810IQ-4C L-Band High Power GaAs FET FEATURES • • • • • • Push-Pull Configuration High Power Output: 80W High PAE: 45%. Excellent Linearity Suitable for class AB operation. Hermetically Sealed Package DESCRIPTION The FLL810IQ-4C is an 80 Watt GaAs FET that employs a push-pull design


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    PDF FLL810IQ-4C FLL810IQ-4C L-Band

    Eudyna Devices

    Abstract: eudyna fet FLL810IQ-3C
    Text: FLL810IQ-3C L-Band High Power GaAs FET FEATURES • • • • • • Push-Pull Configuration High Power Output: 80W High PAE: 50%. Excellent Linearity Suitable for class AB operation. Hermetically Sealed Package DESCRIPTION The FLL810IQ-3C is an 80 Watt GaAs FET that employs a push-pull design.


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    PDF FLL810IQ-3C FLL810IQ-3C Symbo4888 Eudyna Devices eudyna fet

    Eudyna Devices

    Abstract: FLC167WF
    Text: FLC167WF C-Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 31.8dBm Typ. High Gain: G1dB = 7.5dB(Typ.) High PAE: ηadd = 35%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLC167WF is a power GaAs FET that is designed for general


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    PDF FLC167WF FLC167WF Sto4888 Eudyna Devices

    FLL120MK

    Abstract: Eudyna Devices
    Text: FLL120MK L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 40.0dBm Typ. High Gain: G1dB = 10.0dB (Typ.) High PAE: ηadd = 40% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL120MK is a Power GaAs FET that is specifically designed to


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    PDF FLL120MK FLL120MK Eudyna Devices

    Untitled

    Abstract: No abstract text available
    Text: FLM1414-8F Internally Matched Power GaAs FET FEATURES • • • • • • • High Output Power: P1dB = 39.0dBm Typ. High Gain: G1dB = 6.0dB (Typ.) High PAE: ηadd = 27% (Typ.) Low IM3 = -46dBc@Po = 28.5dBm (Typ.) Broad Band: 14.0 ~ 14.5GHz Impedance Matched Zin/Zout = 50Ω


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    PDF FLM1414-8F -46dBc FLM1414-8F