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    EUPEC FZ 1200 R 12 Search Results

    EUPEC FZ 1200 R 12 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    XPN12006NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 20 A, 0.0120 Ω@10V, TSON Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    TPN12008QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 26 A, 0.0123 Ohm@10V, TSON Advance Visit Toshiba Electronic Devices & Storage Corporation
    CS1200 Coilcraft Inc Current Sense Transformer, 35A, 1:200 Visit Coilcraft Inc Buy
    CS1200L Coilcraft Inc Current Sense Transformer, 35A, 1:200, ROHS COMPLIANT Visit Coilcraft Inc Buy
    HPH5-1200LD Coilcraft Inc General Purpose Inductor, 173uH, 25%, 1 Element, Ferrite-Core, SMD, ROHS COMPLIANT Visit Coilcraft Inc

    EUPEC FZ 1200 R 12 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    eupec igbt 3300v

    Abstract: transistor 6.z eupec FZ 900 R 12
    Text: European PowerSemiconductor and Electronics Company Marketing Information FZ 1200 R 33 KF1 61,5 61,5 M8 13 190 31,5 171 57 C C C E E E 4,0 tief C 2,5 tief M4 E G 20,25 28 7 41,25 79,4 external connection to be done C C C E E E C G E external connection to


    Original     		PDF 220nF, eupec igbt 3300v transistor 6.z eupec FZ 900 R 12

    6.5kV IGBT

    Abstract: IGBT Power Module siemens ag infineon igbt reliability siemens IGBT 600a eupec igbt 6500v igbt 6.5kv SiC IGBT High Power Modules, PCIM Hongkong Measurement of stray inductance for IGBT IGBT module FZ siemens igbt inverters
    Text: 6.5kV IGBT-Modules Franz Auerbach Infineon Technologies Josef Georg Bauer (Siemens AG) Manfred Glantschnig (Infineon Technologies) Jürgen Göttert (eupec GmbH & Co KG) Martin Hierholzer (eupec GmbH & Co KG) Alfred Porst (Infineon Technologies) Daniel Reznik (Siemens AG)


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    12KF4

    Abstract: W0024
    Text: European PowerSemiconductor and Electronics Company Marketing Information FZ 1800 R 12 KF4 61,5 61,5 13 190 31,5 171 57 1 2 3 C M8 C C E M4 4 E E 4,0 deep C 2,5 deep E 7 G 6 5 8 20,25 28 7 41,25 M6 79,4 external connection to be done C C C E E E C G E external connection to


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    IGBT FZ 1200

    Abstract: kf411 12KF4
    Text: European PowerSemiconductor and Electronics Company Marketing Information FZ 1800 R 12 KF4 61,5 61,5 13 190 31,5 171 57 1 2 3 C M8 C C E M4 4 E E 4,0 deep C 2,5 deep E 7 G 6 5 8 20,25 28 M6 7 41,25 79,4 external connection to be done C C C E E E C G E external connection to


    Original     		PDF

    Eupec fz 1200 r 12

    Abstract: vrm ic
    Text: European PowerSemiconductor and Electronics Company Marketing Information FZ 1800 R 12 KF4 61,5 61,5 13 190 31,5 171 57 1 2 3 C M8 C C E M4 4 E E 4,0 deep C 2,5 deep E 7 G 6 5 8 20,25 28 7 41,25 M6 79,4 external connection to be done C C C E E E C G E external connection to


    Original     		PDF

    eupec FZ 800 r 12 kf1

    Abstract: transistor GR 3200 GE DIODE 0270
    Text: European PowerSemiconductor and Electronics Company Marketing Information FZ 800 R 33 KF1 61,5 18 M8 130 31,5 114 C C E E 4,0 tief E C G 2,5 tief M4 7 28 10,65 48,8 10,35 external connection to be done C C E E C G E external connection to be done VWK, April 1996


    Original     		PDF peak2500 150nF, eupec FZ 800 r 12 kf1 transistor GR 3200 GE DIODE 0270

    IGBT module FZ 1200

    Abstract: IGBT FZ 1800
    Text: European PowerSemiconductor and Electronics Company Marketing Information FZ 1800 R 12 KF4 61,5 61,5 13 190 31,5 171 57 1 2 3 C M8 C C E M4 4 E E 4,0 deep C 2,5 deep E 7 G 6 5 8 20,25 28 7 41,25 M6 79,4 external connection to be done C C C E E E C G E external connection to


    Original     		PDF

    FS20R06XE3

    Abstract: aeg powerblock tt bsm25gp120 b2 thyristor aeg aeg powerblock tt 32 n STR W 6856 DATA SHEET HIGH VOLTAGE ISOLATION DZ 2101 FS450R12KE3 S1 MR 4710 IC aeg powerblock dd
    Text: Power Semiconductors » Short Form Catalog » 2004 A Wide Range In Short Words. An Infineon Technologies Company go to content go to content eupec eupec European Power Semiconductors and Electronics Company – is situated in Warstein and is one of the world’s leading manufacturers of Power Semiconductors


    Original     		PDF D-59581 FS20R06XE3 aeg powerblock tt bsm25gp120 b2 thyristor aeg aeg powerblock tt 32 n STR W 6856 DATA SHEET HIGH VOLTAGE ISOLATION DZ 2101 FS450R12KE3 S1 MR 4710 IC aeg powerblock dd

    FS300R12OE4P

    Abstract: FS450R12OE4P FP06R12W1T4 F3L400R12PT4 bt 1690 scr fp150r07n3e4 F3L300R12PT4 Eupec thyristors catalog FF150R12RT4 Dz800S17ke3
    Text: Short Form Catalog 2012 High Power Semiconductors for Industrial Applications www.infineon.com/highpower Auch mit dem KuKa Kurzkatalog 2012 bieten wir Ihnen wieder einen Überblick über dieses Spektrum mit vielen Details. Durch ständigen Dialog mit unseren Kunden haben wir auch in


    Original     		PDF

    FS450R12KE3 S1

    Abstract: infineon pmb 6850 e bsm25gp120 b2 HIGH VOLTAGE ISOLATION DZ 2101 infineon pmb 6850 Thyristor eupec POWERBLOCK 2SD 1460 pmb 6850 V61-14 BSM35GP120
    Text: Power Semiconductors Shortform Catalog 2003 An Infineon Technologies Company go to content eupec eupec Inc. headquartered in Lebanon, New Jersey, provides a wide array of innovative semiconductor products, includinge IGBT high power and standard modules, thyristors and diodes.


    Original     		PDF E-103, FS450R12KE3 S1 infineon pmb 6850 e bsm25gp120 b2 HIGH VOLTAGE ISOLATION DZ 2101 infineon pmb 6850 Thyristor eupec POWERBLOCK 2SD 1460 pmb 6850 V61-14 BSM35GP120

    BUSBAR calculation

    Abstract: BUSBAR calculation datasheet calculation of IGBT snubber 3 level inverter 3 phase motor inverters circuit diagram igbt 3 phase inverters circuit diagram igbt DC Link capacitor calculation design dc link inverter IGBT inverter calculation inductances types
    Text: European PowerSemiconductor and Electronics Company GmbH + Co. KG Design Aspects for Inverters with IGBT High Power Modules Dr.-Ing. Th. Schütze, eupec GmbH & Co KG, Warstein, Germany Abstract With regard to the blocking ability and efficiency of the new 3.3 kV IGBT high voltage modules IHV with nominal


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    EUPEC Thyristor T 1059

    Abstract: thyristor t 718 n thyristor T 218 N EUPEC Thyristor T 869 EUPEC t 1209 EUPEC Thyristor 1901 DIODE 4003 EUPEC T 1078 F EUPEC T 821 Emitter Turn-Off thyristor
    Text: . power the Home Products N-Thyristors News Contact Editorials Job Offers Company Search Site Content VDRM,RRM max. 1800V VDRM,RRM max. 3800V VDRM,RRM max. 5200V VDRM,RRM max. 8000V Light Triggered SCRs the figures in the part-no. represent the current rating [A]


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    eupec FZ 50 A 12 KF

    Abstract: IGBT FF 300 fz 69 FZ 300 R 06 KL kl 50 eupec FZ 800 R 16 Eupec fz 1200 r 12 FZ15A10KN FF 75 R 1200 kl igbt eupec FS 25 R 12 KL
    Text: IGBT modules EUPEC 3 4 0 3 2 e!? D0DG122 MTE D 071 • UPEC Fast modules Type VcES V ► ► FF FF FF FF FF 15 25 25 50 50 FF 75 FF 75 FF 100 FF 100 FF 150 FF 150 FF 200 FF 200 FF 300 FZ 200 FZ 300 FZ 300 FZ 400 FZ 400 R 12 R 06 R 12 R 06 R 12 KF KF KF KF


    OCR Scan     		PDF D0DG122 eupec FZ 50 A 12 KF IGBT FF 300 fz 69 FZ 300 R 06 KL kl 50 eupec FZ 800 R 16 Eupec fz 1200 r 12 FZ15A10KN FF 75 R 1200 kl igbt eupec FS 25 R 12 KL

    IGBT FF 300

    Abstract: eupec FZ 50 A 12 KF FZ 75 eupec FZ 800 R 16 fz 69 eupec FS 25 R 12 KL eupec igbt 400 A FZ200 Eupec fz 1200 r 12 50/R005 FZ
    Text: IGBT modules EUPEC 3 4 0 3 2 e!? D0DG122 MTE D 071 • UPEC Fast modules Type VcES V ► ► FF FF FF FF FF 15 25 25 50 50 FF 75 FF 75 FF 100 FF 100 FF 150 FF 150 FF 200 FF 200 FF 300 FZ 200 FZ 300 FZ 300 FZ 400 FZ 400 R 12 R 06 R 12 R 06 R 12 KF KF KF KF


    OCR Scan     		PDF D0DG122 IGBT FF 300 eupec FZ 50 A 12 KF FZ 75 eupec FZ 800 R 16 fz 69 eupec FS 25 R 12 KL eupec igbt 400 A FZ200 Eupec fz 1200 r 12 50/R005 FZ

    FF 150 R 1200 kf igbt

    Abstract: IGBT FF 300 R 06 KF2 IGBT FF 300 FF 50 R 12 KF2 FZ 300 R 06 KL IGBT module FZ 1200 IGBT module FZ FF 75 R 1200 kl igbt FF 50 R 12 kf igbt Eupec fz 1200 r 12
    Text: EUPEC IGBT modules tlE D • 34D32T7 00G134M 4*11 « U P E C Fast modules Type VcES lc IcRM V= V A V C E sat. to n RthJC ts tvj max Outline DC 1v| = tvi 2 5 °C, typ. 25 °C, typ. 25 °C, typ. u per arm 1 ms 25 °C, typ. A V us US us °c/w tv = = °c Dual modules


    OCR Scan     		PDF 00G1344 FF 150 R 1200 kf igbt IGBT FF 300 R 06 KF2 IGBT FF 300 FF 50 R 12 KF2 FZ 300 R 06 KL IGBT module FZ 1200 IGBT module FZ FF 75 R 1200 kl igbt FF 50 R 12 kf igbt Eupec fz 1200 r 12

    IGBT FF 300

    Abstract: eupec module igbt FF 150 R 1200 kf igbt IGBT FF 300 R 06 KF2 FF 50 R 12 kf igbt Eupec fz 1200 r 12 IGBT FF 300 R 12 KF2 IGBT module FZ 1200 eupec FZ 800 R 16 FF 25 R 1200 KF
    Text: EUPEC IGBT modules tlE D • 34D32T7 00G134M 4*11 « U P E C Fast modules Type VcES lc IcRM V= V A V C E sat. to n RthJC ts tvj max Outline DC 1v| = tvi 2 5 °C, typ. 25 °C, typ. 25 °C, typ. u per arm 1 ms 25 °C, typ. A V us US us °c/w tv = = °c Dual modules


    OCR Scan     		PDF 00G1344 IGBT FF 300 eupec module igbt FF 150 R 1200 kf igbt IGBT FF 300 R 06 KF2 FF 50 R 12 kf igbt Eupec fz 1200 r 12 IGBT FF 300 R 12 KF2 IGBT module FZ 1200 eupec FZ 800 R 16 FF 25 R 1200 KF

    tw12n

    Abstract: BSTC0326S6 eupec FZ 800 R 16 BSTD0313S6 eupec FZ 900 R 16 TW11N BSTD0313 tw12n 1000 BSTD0366S6 TW7N
    Text: Type b lE EUPEC Low power thyristors V drm It r m s m / i 2dt Itsm 34 03 HT 7 D 000 134 0 037 Itav m ^ c V TO It (di/dt)cr *q (dv/dt)cr Von Ig t typ. DIN tvj = 25 °C t vj I EC 747-6 2 5 DC sinus V mA °C/W R ,h jc IUPEC Wj max Outline V r r m 10 V A ms,


    OCR Scan     		PDF 34G3HT7 tw12n BSTC0326S6 eupec FZ 800 R 16 BSTD0313S6 eupec FZ 900 R 16 TW11N BSTD0313 tw12n 1000 BSTD0366S6 TW7N

    IC 7476

    Abstract: BSTD0313S6 BSTD0313 7476 IC BSTC0326S6 BSTD0366 BSTD0353S6 BSTC0340S6 TW7N BSTC0353S6
    Text: Low power thyristors Type V EUPEC ' tsm 'trm sm drm / i 2dt ' tavm^ c t lE V TO 11 • It 3^D3^‘,7 000131,4 037 " UPEC (di/dt)cr (dv/dt)cr VffT Igt Rthjc W j m ax Outline V rrm V A T 3,5 N 400 600 800 T 5 N 400 600 800 T 7,5 N DIN IEC 747-6 tvj = tvj max


    OCR Scan     		PDF 34032T7 DD0134A IC 7476 BSTD0313S6 BSTD0313 7476 IC BSTC0326S6 BSTD0366 BSTD0353S6 BSTC0340S6 TW7N BSTC0353S6

    TW12N

    Abstract: BSTC0353S6 fz 85 BSTC0380S6 BSTD0340S6 FZ 51 BSTC0313S6 BSTC0353 TW7N BSTD0326S6
    Text: Low power thyristors Type V drm V rrm EUPEC V / i 2dt IfSM It r m s m A MTE D • ^TAVM^C VfTO Tt 3MG32T7 0000155 000 ■ UPEC 'FZ'b-Ol di/dt)cr *q (dv/dt)cr Vqt Ig t Rthx typ. DIN tvj = IEC 747-6 2 5 °C tvj = 25 °C 180 °el sinus 10 ms, 10 ms, tvi max


    OCR Scan     		PDF 3MG32T7 TW12N BSTC0353S6 fz 85 BSTC0380S6 BSTD0340S6 FZ 51 BSTC0313S6 BSTC0353 TW7N BSTD0326S6

    FF100R10KN

    Abstract: Eupec fz 1200 r 12 fz 300 r 12 kf2 eupec module igbt FZ200
    Text: EUPEC IGBT m odules b lE 34032^7 0G01345 3Efl D IUPEC Normal modules Type VcES IcRM lc A Outline tv] = 25 ”C, typ. t«i = 25 °C, typ. tyj = 25 °C, typ. tv¡ A V US US us °C/W °c 150 59 25 °C, typ. 0,5 0,3 25 50 3 0,4 0,6 0,3 0,5 150 59 50 100 3 0,45


    OCR Scan     		PDF

    igbt power module FS 25 R 12 KF2

    Abstract: Eupec fz 1200 r 12 FD100 FZ200
    Text: EUPEC IGBT modules b lE D • 34032^7 0G 01345 3Efl M U P E C Normal modules Type VcES IcRM lc A Outline tv] = 25 ”C, typ. t«i = 25 °C, typ. tyj = 25 °C , typ. tv¡ A V US US us °C/W °c 150 59 = 25 °C, typ. 0,5 0,3 25 50 3 0,4 0,6 0,3 0,5 150 59 50


    OCR Scan     		PDF

    JRC 45600

    Abstract: YD 803 SGS 45600 JRC TDA 7277 TDA 5072 krp power source sps 6360 2904 JRC Sony SHA T90 SA philips HFE 4541
    Text: I SEMICON INDEXES Contents and Introduction Manufacturers' Information V O LU M E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 15th EDITION 1997 Numerical Listing of Integrated Circuits Substitution Guide U D C 621.382.3 Diagram s THE S E M IC O N INTERNATIONAL INDEXES


    OCR Scan     		PDF ZOP033 ZOP035 ZOP036 ZOP037 ZOP038 ZOP039 ZOP045 ZOP042 ZOP041 ZOP043 JRC 45600 YD 803 SGS 45600 JRC TDA 7277 TDA 5072 krp power source sps 6360 2904 JRC Sony SHA T90 SA philips HFE 4541