EXCELICS Search Results

EXCELICS Result Highlights (5)

Part	Manufacturer	Description
R5F56604ADFM#10	Renesas Electronics Corporation	32-bit Microcontrollers with High Performance and Excellent Noise Tolerance for 5V Power Supply
R5F56604AGFM#10	Renesas Electronics Corporation	32-bit Microcontrollers with High Performance and Excellent Noise Tolerance for 5V Power Supply
R5F56604BDFM#10	Renesas Electronics Corporation	32-bit Microcontrollers with High Performance and Excellent Noise Tolerance for 5V Power Supply
R5F56604BGFM#10	Renesas Electronics Corporation	32-bit Microcontrollers with High Performance and Excellent Noise Tolerance for 5V Power Supply
R5F56604CDFN#10	Renesas Electronics Corporation	32-bit Microcontrollers with High Performance and Excellent Noise Tolerance for 5V Power Supply

EXCELICS Datasheets (397)

Part	Manufacturer	Description	Datasheet Type	PDF
EF018A	Excelics Semiconductor	Low distortion GaAs power FET	Original	PDF
EFA018A	Excelics Semiconductor	Low Distortion GaAs Power FET	Original	PDF
EFA018A-70	Excelics Semiconductor	6-10V low distortion GaAs power FET	Original	PDF
EFA024A	Excelics Semiconductor	6-10V low distortion GaAs power FET	Original	PDF
EFA025A	Excelics Semiconductor	6-12V low distortion GaAs power FET	Original	PDF
EFA025A-70	Excelics Semiconductor	6-10V low distortion GaAs power FET	Original	PDF
EFA025AL	Excelics Semiconductor	8-12V high gain GaAs power FET	Original	PDF
EFA040A	Excelics Semiconductor	8-12V low distortion GaAs power FET	Original	PDF
EFA040A-70	Excelics Semiconductor	6-10V low distortion GaAs power FET	Original	PDF
EFA060B	Excelics Semiconductor	8-12V low distortion GaAs power FET	Original	PDF
EFA060B-100F	Excelics Semiconductor	Low Distortion GaAs Power FET	Original	PDF
EFA060B-70	Excelics Semiconductor	6-10V low distortion GaAs power FET	Original	PDF
EFA060BB-100F	Excelics Semiconductor	8-12V low distortion GaAs power FET	Original	PDF
EFA060BV	Excelics Semiconductor	8-12V low distortion GaAs power FET	Original	PDF

EFA072A	Excelics Semiconductor	8-12V low distortion GaAs power FET	Original	PDF
EFA080A	Excelics Semiconductor	8-12V low distortion GaAs power FET	Original	PDF
EFA080A-100F	Excelics Semiconductor	8-12V low distortion GaAs power FET	Original	PDF
EFA080A-70	Excelics Semiconductor	5-8V low distortion GaAs power FET	Original	PDF
EFA1200A	Excelics Semiconductor	8-12V low distortion GaAs power FET	Original	PDF
EFA120A	Excelics Semiconductor	8-12V low distortion GaAs power FET	Original	PDF

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EXCELICS Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: EIC1010A-12 10.0-10.25 GHz 12-Watt Internally Matched Power FET ISSUED: 07/24/2007 Excelics FEATURES • • • • • • .024 EIC1010A-12 .827±.010 .669 10.0-10.25GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +40.5dBm Output Power at 1dB Compression	Original	PDF	EIC1010A-12 12-Watt 25GHz 25GHz
EIA1414-2P Abstract: EIB1414-2P Text: Excelics EIA/EIB1414-2P PRELIMINARY DATA SHEET 14.0-14.5GHz, 2W Internally Matched Power FET • • • • • • 14.0-14.5GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM EIA FEATURES HIGH PAE 30% TYPICAL EIB FEATURES HIGH IP3(46dBm TYPICAL)	Original	PDF	EIA/EIB1414-2P 46dBm EIA1414-2P 180mA 32dBm 175oC 150oC 45dBc 23dBm/Tone -65/150oC EIA1414-2P EIB1414-2P
EPA240D Abstract: No abstract text available Text: Excelics EPA240D DATA SHEET High Efficiency Heterojunction Power FET • • • • • • 410 +33dBm TYPICAL OUTPUT POWER 20.0 dB TYPICAL POWER GAIN AT 2GHz 0.4 X 2400 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION	Original	PDF	EPA240D 33dBm EPA240D
EPA025A-70 Abstract: 0466 1.5 micron Text: Excelics EPA025A-70 DATA SHEET High Efficiency Heterojunction Power FET 6 6 ' • • • NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE +21.5dBm TYPICAL OUTPUT POWER 8.0dB TYPICAL POWER GAIN AT 18GHz TYPICAL 0.85dB NOISE FIGURE AND 11.0dB ASSOCIATED GAIN AT 12GHz	Original	PDF	EPA025A-70 70mil 18GHz 12GHz Rn/50 EPA025A-70 0466 1.5 micron
EIA1818-2P Abstract: EIB1818-2P f1815 Text: Excelics EIA/EIB1818-2P PRELIMINARY DATA SHEET 18.15-18.75GHz, 2W Internally Matched Power FET • • • • • • 18.15-18.75GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM EIA FEATURES HIGH PAE 25% TYPICAL EIB FEATURES HIGH IP3(46dBm TYPICAL)	Original	PDF	EIA/EIB1818-2P 75GHz, 75GHz 46dBm EIA1818-2P EIB1818-2P 75GHz 180mA 32dBm 175oC EIA1818-2P EIB1818-2P f1815
EIA1718-2P Abstract: EIB1718-2P Text: Excelics EIA/EIB1718-2P PRELIMINARY DATA SHEET 17.7-18.7GHz, 2W Internally Matched Power FET • • • • • • 17.7-18.7GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM EIA FEATURES HIGH PAE 25% TYPICAL EIB FEATURES HIGH IP3(46dBm TYPICAL)	Original	PDF	EIA/EIB1718-2P 46dBm EIA1718-2P 180mA 32dBm 175oC 150oC 45dBc 23dBm/Tone -65/150oC EIA1718-2P EIB1718-2P
EPA240D-SOT89 Abstract: EPA240D EPA240 Text: Excelics EPA240D-SOT89 DATA SHEET DC-6GHz High Efficiency Heterojunction Power FET Features '5$,1 6285& (Top View All Dimensions In Mils Applications • • • $ &# *$7( • • • LOW COST SURFACE-MOUNT PLASTIC PACKAGE	Original	PDF	EPA240D-SOT89 33dBm 40dBm EPA240D-SOT89 EPA240D EPA240
513 s12 datasheet Abstract: EPA060BV EPA060B Text: Excelics EPA060B/EPA060BV DATA SHEET High Efficiency Heterojunction Power FET • • • • • • • • +26.5dBm TYPICAL OUTPUT POWER 10.0dB TYPICAL POWER GAIN FOR EPA060B AND 11.5dB FOR EPA060BV AT 18GHz 0.4dB TYPICAL NOISE FIGURE AT 2GHz 0.3 X 600 MICRON RECESSED “MUSHROOM” GATE	Original	PDF	EPA060B/EPA060BV EPA060B EPA060BV 18GHz EPA060B MA162 Rn/50 513 s12 datasheet
EIA1415-4P Abstract: EIB1415-4P Text: Excelics EIA/EIB1415-4P PRELIMINARY DATA SHEET 14.40-15.35GHz, 4W Internally Matched Power FET • • • • • • 14.40-15.35GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM EIA FEATURES HIGH PAE 27% TYPICAL EIB FEATURES HIGH IP3(49dBm TYPICAL)	Original	PDF	EIA/EIB1415-4P 35GHz, 35GHz 49dBm EIA1415-4P 35GHz 360mA 35dBm 175oC EIA1415-4P EIB1415-4P
EIA1011-4P Abstract: EIB1011-4P Text: Excelics EIA/EIB1011-4P PRELIMINARY DATA SHEET 10.7-11.7GHz, 4W Internally Matched Power FET • • • • • • 10.7-11.7GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM EIA FEATURES HIGH PAE 30% TYPICAL EIB FEATURES HIGH IP3(49dBm TYPICAL)	Original	PDF	EIA/EIB1011-4P 49dBm EIA1011-4P 360mA 35dBm 175oC 150oC 45dBc 26dBm/Tone -65/150oC EIA1011-4P EIB1011-4P
LM79GCP Abstract: EIA1819-2P EIB1819-2P Text: Excelics EIA/EIB1819-2P PRELIMINARY DATA SHEET 18.7-19.7GHz, 2W Internally Matched Power FET • • • • • • 18.7-19.7GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM EIA FEATURES HIGH PAE 25% TYPICAL EIB FEATURES HIGH IP3(46dBm TYPICAL)	Original	PDF	EIA/EIB1819-2P 46dBm EIA1819-2P 180mA 32dBm 175oC 150oC 45dBc 23dBm/Tone -65/150oC LM79GCP EIA1819-2P EIB1819-2P
EPA040A Abstract: No abstract text available Text: Excelics EPA040A DATA SHEET High Efficiency Heterojunction Power FET • • • • • • +24.5dBm TYPICAL OUTPUT POWER 11.0dB TYPICAL POWER GAIN AT 18GHz 0.3 X 400 MICRON RECESSED “ MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION	Original	PDF	EPA040A 18GHz 12GHz EPA040A
EFC060B Abstract: No abstract text available Text: Excelics EFC060B PRELIMINARY DATA SHEET Low Distortion GaAs Power FET • • • • • • • +25.0dBm TYPICAL OUTPUT POWER 10.5dB TYPICAL POWER GAIN AT 12GHz HIGH BVgd FOR 10V BIAS 0.3 X 600 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE	Original	PDF	EFC060B 12GHz 18GHz EFC060B
EFA240B-100F Abstract: No abstract text available Text: Excelics EFA240B-100F DATA SHEET Low Distortion GaAs Power FET ' 7<3 7<3 All Dimensions In mils ELECTRICAL CHARACTERISTICS Ta = 25 OC SYMBOLS P1dB G1dB PAE PARAMETERS/TEST CONDITIONS Output Power at 1dB Compression Vds=8V, Ids=50% Idss Gain at 1dB Compression	Original	PDF	EFA240B-100F EFA240B-100F

EFA480C-SOT89 Abstract: No abstract text available Text: Excelics EFA480C-SOT89 DATA SHEET DC-4GHz Low Distortion GaAs Power FET Features '5$,1 6285& (Top View All Dimensions In Mils Applications • • $ &# *$7( • • • LOW COST SURFACE-MOUNT PLASTIC PACKAGE	Original	PDF	EFA480C-SOT89 48dBm EFA480C-SOT89
EFA040A-70 Abstract: PT 1132 Text: Excelics EFA040A-70 DATA SHEET Low Distortion GaAs Power FET 44 19 4 20 S S 70 D 40 NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE +22.0dBm TYPICAL OUTPUT POWER 8.0dB TYPICAL POWER GAIN AT 12GHz 0.3 X 400 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION	Original	PDF	EFA040A-70 70mil 12GHz 18GHz EFA040A-70 PT 1132
EIA1213-2P Abstract: EIB1213-2P Text: Excelics EIA/EIB1213-2P PRELIMINARY DATA SHEET 12.75-13.25GHz, 2W Internally Matched Power FET • • • • • • 12.75-13.25GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM EIA FEATURES HIGH PAE 30% TYPICAL EIB FEATURES HIGH IP3(46dBm TYPICAL)	Original	PDF	EIA/EIB1213-2P 25GHz, 25GHz 46dBm EIA1213-2P EIB1213-2P 25GHz 180mA 32dBm 175oC EIA1213-2P EIB1213-2P
EIA1718-1P Abstract: EIB1718-1P Text: Excelics EIA/EIB1718-1P PRELIMINARY DATA SHEET 17.7-18.7GHz, 1W Internally Matched Power FET • • • • • • 17.7-18.7GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM EIA FEATURES HIGH PAE 25% TYPICAL EIB FEATURES HIGH IP3(43dBm TYPICAL)	Original	PDF	EIA/EIB1718-1P 43dBm EIA1718-1P 32dBm 175oC 150oC 45dBc 20dBm/Tone -65/150oC EIA1718-1P EIB1718-1P
EFA080A-70 Abstract: No abstract text available Text: Excelics EFA080A-70 DATA SHEET Low Distortion GaAs Power FET 44 19 4 20 S S 70 D 40 NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE +23.5dBm TYPICAL OUTPUT POWER 7.0 dB TYPICAL POWER GAIN AT 12GHz 0.3 X 800 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION	Original	PDF	EFA080A-70 70mil 12GHz 18GHz EFA080A-70
Untitled Abstract: No abstract text available Text: EIC5972-4 5.90-7.20 GHz 10-Watt Internally Matched Power FET UPDATED 11/10/2006 FEATURES • • • • • • • • Excelics 5.90– 7.20GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +36.5 dBm Output Power at 1dB Compression 9.0 dB Power Gain at 1dB Compression	Original	PDF	EIC5972-4 10-Watt 20GHz
15284 Abstract: EMA406C Text: Excelics EMA406C TENTATIVE DATA SHEET 26 - 32 GHz Low Noise MMIC FEATURES • • • • • • • • 26 -32 GHz BANDWIDTH +20.0 dBm TYPICAL OUTPUT POWER 21 dB ± 1.5 dB TYPICAL POWER GAIN FOUR SECTION, DISTRIBUTED AMPLIFIER DUAL BIAS SUPPLY 0.3 MICRON RECESSED “MUSHROOM” GATE	Original	PDF	EMA406C 140mA) 28GHz) 15284 EMA406C
EMA501D Abstract: IDSS-30 8582 Text: Excelics EMA501D TENTATIVE DATA SHEET 36 - 40 GHz Medium Power MMIC FEATURES • • • • • • • 36 -40 GHz BANDWIDTH +21 dBm OUTPUT POWER @1dB Gain Compression 23 dB TYPICAL POWER GAIN DUAL BIAS SUPPLY 0.3 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION	Original	PDF	EMA501D EMA501D IDSS-30 8582
Untitled Abstract: No abstract text available Text: EIC2224-15 2.20 – 2.40 GHz 15W Internally Matched Power FET ISSUED 04/04/2006 2X 0.079 MIN 4X 0.102 FEATURES • • • • • • • Excelics EIC2224-15 2.20– 2.40GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +42.5 dBm Output Power at 1dB Compression	Original	PDF	EIC2224-15 40GHz 40GHz 192mA -33mA -11mA
EIC7179-10 Abstract: No abstract text available Text: EIC7179-10 7.10-7.90 GHz 10-Watt Internally Matched Power FET ISSUED DATE: 01/30/2008 FEATURES • • • • • • • • Excelics 7.10-7.90GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +40.5 dBm Output Power at 1dB Compression 8.5 dB Power Gain at 1dB Compression	Original	PDF	EIC7179-10 10-Watt 90GHz EIC7179-10

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EXCELICS Search Results

EXCELICS Result Highlights (5)

EXCELICS Datasheets (397)

EXCELICS Datasheets Context Search

Untitled

EIA1414-2P

EPA240D

EPA025A-70

EIA1818-2P

EIA1718-2P

EPA240D-SOT89

513 s12 datasheet

EIA1415-4P

EIA1011-4P

LM79GCP

EPA040A

EFC060B

EFA240B-100F

EFA480C-SOT89

EFA040A-70

EIA1213-2P

EIA1718-1P

EFA080A-70

Untitled

15284

EMA501D

Untitled

EIC7179-10