IDA100
Abstract: No abstract text available
Text: SHINDENGEN VX-2 Series Power MOSFET 2SK2187 F10S50VX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : STO-220 Case E-pack (Unit : mm) 500V 10A FEATURES ●Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ●The static Rds(on) is small.
|
Original
|
2SK2187
F10S50VX2)
STO-220
IDA100
|
PDF
|
2SK2489
Abstract: NC4050
Text: SHINDENGEN VZ Series Power MOSFET 2SK2489 F10S18VZ N-Channel Enhancement type OUTLINE DIMENSIONS Case : STO-220 (Unit : mm) 180V 10A FEATURES ● Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ● The static Rds(on) is small.
|
Original
|
2SK2489
F10S18VZ
STO-220
2-24V
2SK2489
NC4050
|
PDF
|
DSP56004
Abstract: DSP56004FJ66
Text: Chip Errata DSP56004 Digital Signal Processor Mask: F10S ERRATA Errata Description 1. Specification timings #83, #84, and #87 in the data sheet provide 1x TC less than specified. i.e. Applies to Mask F10S a. Specification #83 measures 8 x TC 12 x TC instead of 9 x Tc (13 x TC) in the
|
Original
|
DSP56004
DSP56004FJe
/stl/3-14-95
DSP56004FJ66
|
PDF
|
2SK2187
Abstract: F10S50VX2
Text: SHINDENGEN VX-2 Series Power MOSFET 2SK2187 F10S50VX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : STO-220 Case E-pack (Unit : mm) 500V 10A FEATURES ● Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ● The static Rds(on) is small.
|
Original
|
2SK2187
F10S50VX2)
STO-220
2SK2187
F10S50VX2
|
PDF
|
2SK2187
Abstract: F10S50VX2
Text: SHINDENGEN VX-2 Series Power MOSFET 2SK2187 F10S50VX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : STO-220 (Unit : mm) 500V 10A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small.
|
Original
|
2SK2187
F10S50VX2)
STO-220
2SK2187
F10S50VX2
|
PDF
|
DSP56004
Abstract: DSP56004FJ66
Text: Freescale Semiconductor, Inc. Chip Errata DSP56004 Digital Signal Processor Mask: F10S Freescale Semiconductor, Inc. ERRATA Errata Description 1. Specification timings #83, #84, and #87 in the data sheet provide 1x TC less than specified. i.e. Applies to Mask
|
Original
|
DSP56004
/stl/3-14-95
DSP56004FJ66
|
PDF
|
STC104
Abstract: STC101-F10S
Text: TELECOM AND DATA COMMUNICATIONS COMMUNICATION PERIPHERALS Device STC101-F10S STC104 Description Parallel DS-Link Adaptor Asynchronous Packet Switch
|
Original
|
STC101-F10S
STC104
STC104
STC101-F10S
|
PDF
|
F10S18VZ
Abstract: No abstract text available
Text: SHINDENGEN VZ Series Power MOSFET 2SK2489 F10S18VZ N-Channel Enhancement type OUTLINE DIMENSIONS Case : STO-220 (Unit : mm) 180V 10A FEATURES ●Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ●The static Rds(on) is small.
|
Original
|
2SK2489
F10S18VZ
STO-220
2-24V
F10S18VZ
|
PDF
|
2SK2489
Abstract: No abstract text available
Text: SHINDENGEN VZ Series Power MOSFET 2SK2489 F10S18VZ N-Channel Enhancement type OUTLINE DIMENSIONS Case : STO-220 (Unit : mm) 180V 10A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small.
|
Original
|
2SK2489
F10S18VZ
STO-220
2-24V
2SK2489
|
PDF
|
2SJ369
Abstract: F10S6P J369
Text: 6 0 V 5 /U -X /X7-M0SFET 60V SERIES POWER MOSFET ¿W +äs0 O U T L IN E D IM E N S IO N S Case : STO-22Ö 2SJ369 F10S6P 4.6 ± 0.2 10.2- 0-2 1.3 - 0-2- D a te co d e t-i A/ate 11 mi tt”ri'h 48 E IA J N o . ' ¿ 450.3 J369 I O.1 + 0.1 , & „ - +0.3 0 .6 - 0.1
|
OCR Scan
|
2SJ369
F10S6P)
STO-22Ã
2SJ369
F10S6P
J369
|
PDF
|
Untitled
Abstract: No abstract text available
Text: S M D » f i,v 'J - 7 : /'fI7 —MOSFET Surface Mounting Technology Device OUTLINE DIMENSIONS 2SK2489 180V 10A Ciss [U n it: ram] Case : STÖ-220 [F10S 18V Z] 4.6 10.2 ^o-2 o-y Hg^(fl>J) 1.3 Date code 19 Uo 2.4 *<>-3 K2489 ftiz v a i 0.1 ±« § &$ÉS 0.74 *<>2
|
OCR Scan
|
2SK2489
K2489
2SK2489
F10S18VZ)
|
PDF
|
2-18-UNS-2A
Abstract: 8-24-UNEF 2-18UNS-2A
Text: CA-COM Wall mounting receptacle, Class F CAOOCOM-F-B with bayonet coupling CAOOCOM-F-B is a wall mounting receptacle with endbell for flex tubes. It mates with plugs CA06CQM -B and CAO8COM-B. Part No. Pin insert* -
|
OCR Scan
|
CA06CQM
CA00COM-F10SL-*
-BCAOOCOM-F12S-*
-BCAOOCOM-F14S-*
-BCAOOCOM-F16S-*
-BCAOOCOM-F16-*
-BCAOOCOM-F18-*
-BCA00COM-F20-*
-BCAOOCOM-F22-*
-BCAOOCOM-F24-*
2-18-UNS-2A
8-24-UNEF
2-18UNS-2A
|
PDF
|
GS 069
Abstract: F10-S30 2SK2064 SHINDENGEN DIODE
Text: L V X v U - X /n° 7 “ M0SFET LVX Series Power M OSFET OUTLINE DIMENSIONS 2SK2064 Oase ; STO-220 F10S30 [U n it! ram] 300V 10A ill 10.2 ±Q-2 1.3 «•= Date code • À 2 S Â (Ciss) ft'/JvSlV =fc T9 a « * # • ^ v ffitn w a r uv m ex-< '.y5: v ? 5 M ' A t f ; s u ,
|
OCR Scan
|
2SK2064
F10S30)
STO-220
K2005
GS 069
F10-S30
2SK2064
SHINDENGEN DIODE
|
PDF
|
Untitled
Abstract: No abstract text available
Text: V X -D v U -X yf7—MOSFET V X - I SERIES POWER MOSFET O U T L I N E D IM E N S IO N S 2SK2187 F10S50VX2 500V 10A ') - Y 9 'f 7‘ b k 0 i to L ea d type is available. • £ «9 1 R A T IN G S A b s o lu t e Maxim um R a tin g s s£ @ m Item (Tc=25°C)
|
OCR Scan
|
2SK2187
F10S50VX2)
400Vj
|
PDF
|
|
|
94B DIODE
Abstract: 2SK2282 F10S6N
Text: 6 0 V > U - X / 1 7 - MOSFET 60V SERIES POWER MOSFET N -9-VÏM ,. X > J \>7. hS O U T L IN E D IM E N S IO N S 2SK2282 F10S6N 60 v 10 a • R A T IN G S ■ A b s o lu te M axim um R a tin g s m is n S ym bol s Ite m m 4k # C o n d itio n s tt M « R a tin g s
|
OCR Scan
|
60VvU-X
/17-MOSFET
2SK2282
F10S6N)
60v10A
STO-220
widthS10
cycleSl/100
94B DIODE
2SK2282
F10S6N
|
PDF
|
717-MOSFET
Abstract: No abstract text available
Text: V X -H v U -X 717—MOSFET VX-H SERIES POWER MOSFET W f2 \H £ l2 ] O U T L IN E D IM E N S IO N S 2SK2187 F10S50VX2 500v 10a <?*> / / / . 'I — K i M Lead type is available. • R A TIN G S A b s o lu te Maxim um R a tin g s m Item IB s Storage Temperature
|
OCR Scan
|
717--MOSFET
2SK2187
F10S50VX2)
717-MOSFET
|
PDF
|
STO-22Q
Abstract: TCA 700 y 2SK2282 F10S6N
Text: 60VvU-X IVI— MOSFET Ä * ; X 'iw > '7 6 0 V SERIES POWER MOSFET N-Ÿ VŸJt, hs O U T L IN E D IM E N S IO N S 2SK2282 Case : STO-22Q F10S6N 4.6 ±0-2 10.2 ±0-2 D a te code <§>48 in ë ln V E IA J No. 2.4 ± °-3 |VK2282 I nr © 0.1±o.i =j , (D n i+ 0 .3
|
OCR Scan
|
60VvU-X
F10S6N)
STO-22Q
S1/100
10/ks,
STO-22Q
TCA 700 y
2SK2282
F10S6N
|
PDF
|
f10sc4
Abstract: CASE-180
Text: y j y 2 /a v h + - KU7 S W - I * a Schottky Barrier Diode Twin Diode O UTLINE D IM E N S IO N S F10SC4 40 V 10 A Date code nafe_ $[ 0181 Type No. F10SC4 U‘\i_ • T jl5 0 ° C Polarity ffiiE I7 4.5 ±a 2.7±0- 10±0-2 <¿3.2-01 • P rrsm Unit •mm
|
OCR Scan
|
SF10SC4
FTO-220
F10SC4
J515-5
CASE-180
|
PDF
|
F10SC6
Abstract: 27A1 F10SC
Text: 2 /a v h + - KU7 S W - I * y j y a Twin Diode Schottky Barrier Diode OUTLINE DIMENSIONS F10SC6 Unit • mm Package I FTO-220 10±0-2 <¿3.2-01 60 V 10 A 4.5 ±a 2.7±0- Date code nafe_ $ [ 0 1 81 Type No. F10SC6 M _ • T jl5 0 ° C Polarity • P r r s m l 7 V 5 Z S ÌJ1 . ffiiE
|
OCR Scan
|
SF10SC6
FTO-220
F10SC6
J515-5
27A1
F10SC
|
PDF
|
k206
Abstract: K2062 2SK2062
Text: L V X v 'J -X /\° 7 -M 0 S F E T LVX S e rie s P o w er M OSFET OUTLINE DIMENSIONS 2SK2062 Case STO-220 F10S25] 250V 10A p -y h i r e m D a(e code [U nit I mm] 4.6 10.2 1.3 5 fc Y nap fe B g ^ • A * ? § Ä (Ciss) E IA J No. Î9 2.4 ±f)3 K2062 if
|
OCR Scan
|
2SK2062
F10S25]
STO-220
K2062
Vds-10V
k206
K2062
2SK2062
|
PDF
|
2SJ369
Abstract: No abstract text available
Text: 60Vv'j-X M9-M0SFET 60V SERIES POWER MOSFET p - * v * ;i/. i > / W f2\f->£[2I > k h O U T L IN E D IM E N S IO N S 2SJ369 F10S6P 60v • 10a - R A T IN G S ■ Absolute Maximum Ratings « Item ite Vi Symbol H Storage Temperature -y ^inn.^ Channel Temperature
|
OCR Scan
|
2SJ369
F10S6P)
2SJ369
|
PDF
|
F10SC6
Abstract: 501C F10SC SHINDENGEN DIODE
Text: V 3 7 K y-<>m Schottky Barrier Diode Twin Diode OUTLINE DIMENSIONS F10SC6 Case : FTO-220 60 V 10A n , l- tlf M i P a le cod e •Vi ft e “-F10SC6 Typ* No • T j I 501C m f i w ♦PnnsM 77/ 0 > i / x<SSI K @ m • S R S ig % D C /D C ~ ^ y K - 9
|
OCR Scan
|
SF10SC6
FTO-220
-F10SC6
F10SC6
501C
F10SC
SHINDENGEN DIODE
|
PDF
|
f10sc9
Abstract: *f10sc9 DF10SC9 F10SC
Text: S/as/h=*P- AUT' Schottky Barrier Diode OUTLINE DIMENSIONS F10SC9 Unit • mm Package I STO-220 I n 9±0.5 90 V 10 A >SM D > T jl5 0 °C >Prrsm tj ^ y ' j i ffiti n m -x m za m m >SRS;H iD C /D C nyjK -z m m s tf-h s oA H 1 (2)@ (D tg l i S f e s 7tt—
|
OCR Scan
|
DF10SC9
STO-220
F10SC9
J515-5
*f10sc9
DF10SC9
F10SC
|
PDF
|
Hercules Graphics Card
Abstract: compaq portable HGC hercules 10472 AMD 91836 hp 2800 display Z150 mip 0254 Enhanced Graphics Adapter Am79C30A
Text: Advanced Micro Devices a AmMap Filter Design S oftw are for the Am 79C30A User’s Guide 1989 Advanced Micro Devices, Inc. Advanced Micro Devices reserves the right to make changes in its products without notice in order to improve design or performance characteristics.
|
OCR Scan
|
Am79C30A
Hercules Graphics Card
compaq portable
HGC hercules
10472 AMD
91836
hp 2800 display
Z150
mip 0254
Enhanced Graphics Adapter
|
PDF
|
