2SK2189
Abstract: F10W50VX2
Text: SHINDENGEN VX-2 Series Power MOSFET 2SK2189 F10W50VX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : MTO-3P (Unit : mm) 500V 10A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small.
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2SK2189
F10W50VX2)
2SK2189
F10W50VX2
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2SK2189
Abstract: F10W50VX2
Text: SHINDENGEN VX-2 Series Power MOSFET 2SK2189 F10W50VX2 500V 10A N-Channel Enhancement type OUTLINE DIMENSIONS Case : MTO-3P (Unit : mm) FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small.
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2SK2189
F10W50VX2)
2SK2189
F10W50VX2
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2SK2189
Abstract: F10W50VX2
Text: SHINDENGEN VX-2 Series Power MOSFET 2SK2189 F10W50VX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : MTO-3P E-pack Case (Unit : mm) 500V 10A FEATURES ●Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ●The static Rds(on) is small.
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2SK2189
F10W50VX2)
2SK2189
F10W50VX2
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Untitled
Abstract: No abstract text available
Text: V X v U - X M 7 -M 0 S F E T V X SERIES POWER MOSFET • O U T L IN E D IM E N S IO N S 2SK1695 F10W50C 500V 10A ■ R A TIN G S ■ S Ê ÎÎS ^ c Æ lÎS A b s o lu te M axim um R a tin g s m Ite m S y m b ol C h a n n e l T e m p e ra tu re Tstg Tch D r a in • S o u r c e V o lt a g e
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2SK1695
F10W50C)
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k1695
Abstract: 2SK1695 F10W50C 2sk16
Text: V X vU -X /\° 7 -M 0 S F E T VX S erie s P ow er M OSFET 2SK1695 o u t l in e d im e n s io n s [F10W50C] 500V 10A [Unit ! mm. Case MTO-3P 4 K H 16 3.3 *o:i ^ g-v fr are «SH D ate code • A £ j § Ä Ciss Ö VM IV OD -& E IA J No. SÄÜ?§re 5.0103 2.2 ±0-5
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2SK1695
F10W50C]
K1695
Vdd-400V,
k1695
2SK1695
F10W50C
2sk16
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K1248
Abstract: 2SK124 2SK1248 rl30n 7bw 24
Text: V X v U - X /\°7 -M 0 S F E T VX S eries Pow er MOSFET 2SK1248 o u t l in e d im e n s io n s Case : MTO-3P [F10W50] . 500V 10A [Unit ; mm] 5.0 ±0-3 i 3.3 ±02 p -v hK ^ ffJ D ale code • A £ )?Ä (Ciss) fê(C tfD A ^7X fêtD A ;^Â Ô V J\ £U , BP
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2SK1248
CF10W50]
-K1248
K1248
2SK124
2SK1248
rl30n
7bw 24
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k1695
Abstract: 500V10A 2SK1695 2sk16
Text: VX5/'J-X M *7-M 0SFET V X SERIES POWER MOSFET • O U T L IN E D IM E N S IO N S Case I M T 0 -3 P 2SK1695 F10W50A 2.2^05 5.0±o-3 ^ ¿3.3 ±0 2 500V 10A .2 .0 ^0 3 2 .4 ± o .3 0.65 ±0-2 CD G ate CD Drain CD S o u rce [Unit • i ■ Æ fê g i RATINGS
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2SK1695
CF10W50A)
500v10A
k1695
500V10A
2SK1695
2sk16
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2sk1248
Abstract: No abstract text available
Text: V X v 'J -X /\° 7 -M 0 S F E T V X S e r i e s P o w er M O S F E T + x > y \ > x ^ > h OUTLINE DIMENSIONS 2SK1248 Case MTO-3P [F10W50] [U n it-. mm] 500V 10A « i i • A ilS B " Î C is s Ö ^ S I A • á - V ff ií a W H H IX • X ^ y 9 1V ^ 5 ' ^ A Í ) í Í S ^ < .
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2SK1248
F10W50]
2SK1248
F10W50)
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Untitled
Abstract: No abstract text available
Text: V X -IS'U -X MOSFET V X -ÏÏ SERIES POWER MOSFET • W fê \f>£Hl O U T L IN E D IM E N S IO N S 2SK2189 F10W50VX2 500v10 a ■ R A TIN G S ■ (T c = 2 5 ”C) Absolute Maximum R atings m Item le a Storage Temperature ■ï -v î' n'im.fg. Channel Temperature
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2SK2189
F10W50VX2)
500v10
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2SK1695
Abstract: F10W50C K1695
Text: VXvU-X /\°7-M 0SFET V X S erie s Pow er M OSFET 2SK1695 OUTLINE D IM E N SIO N S G a s e . M T O -3 P F10W50C 500V 10A 4 [ U n i t ; r a m] 2,2 *Q-5 3.3 i o î KÜ • A Ä S M (Ciss) ff/jvÿUo 2.0 ±03 D ate co d e ¡ti ic-t?n t u pa € E lA J No. • ïV ffitfE fi'/JvÊ U V
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2SK1695
F10W50C]
K1695
2SK1695
F10W50C
K1695
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K1248
Abstract: 2SK1248 F10W50 TCC03 2SK124
Text: V X v U -X MOSFET V X SERIES POWER MOSFET O U T L IN E D IM E N S IO N S Case I M T0-3P 2SK1248 5.0±0-3 F10W50 500v 10a 2.0±0-3 2.4±Q-3 0.65±0-2 [Unit ^ ! • RATINGS ■ Absolute Maximum Ratings M Item i # ' • IB : '¡ I - .':- ft Conditions Symbol
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2SK1248
F10W50)
K1248
K1248
2SK1248
F10W50
TCC03
2SK124
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GCM100
Abstract: No abstract text available
Text: V X v ' J - X y f7 “ M0SFET VX SERIES POWER MOSFET • O U T L IN E D IM E N S IO N S 2SK1248 F10W 50 500V10A ■ ^*#1? R A TIN G S A b s o lu te M axim um R a tin g s m Item i ie -§• & Sym bol # » C o n d itio n s R a tin g s « U n it S to r a g e T e m p e r a tu r e
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2SK1248
500V10A
--10V,
F10W50)
GCM100
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Untitled
Abstract: No abstract text available
Text: RATINGS {=1 « EIAJ No. 2SK2177 2SK2178 2SK2179 2SK2180 2SK2181 2SK2182 2SK2183 2SK2184 2SK2185 2SK2186 2SK2187 2SK2188 2SK2189 2SK2190 2SK2191 2SK2192 2SK2193 2SK2194 2SK2195 2SK2196 2SK2197 2SK2198 Absolute Maximum Ratings Tch Vdss Vgss I d Pt DC Tc=25°C
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2SK2177
2SK2178
2SK2179
2SK2180
2SK2181
2SK2182
2SK2183
2SK2184
2SK2185
2SK2186
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2SK2188
Abstract: F10W90HVX2 2SK2669 2SK2196 F20w 2SK2177 FP7W90HVX2 2SK2182
Text: ¡Ê fc -S lïi ü « R A T IN G S Teh V d s s V g s s Id DC EIA J No. Type No. «SlWflHÌ T c = 25"C E lectrical C h aracteristics Absolute Maximum Ratings [•c] [V ] [V ] P t R d s ON (max) Tc=25°C V g s = 1 0 V Id Iti C iss (typ) ton toff (typ) (typ)
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2SK2177
2SK2178
2SK2179
2SK2180
2SK2181
2SK2182
2SK2183
2SK2184
2SK2185
2SK2186
2SK2188
F10W90HVX2
2SK2669
2SK2196
F20w
FP7W90HVX2
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Untitled
Abstract: No abstract text available
Text: # ' V X - ü v U - X /t9 -M 0 S F E T VX-n SERIES POWER MOSFET W F 2 \H £ [2 ] o u t l in e d im e n s io n s 2SK2189 F1 0W5 0V X2 500v 10a • R A T IN G S ■ A b s o lu te Maxim um R a tin g s m Item IS § (T c = 2 5 °C ) 4k ft Conditions # {-f'imJü.
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2SK2189
F10W50VX2)
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