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    F16N Search Results

    F16N Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    LM3670MF-1.6/NOPB Texas Instruments Miniature Step-Down DC-DC Converter for Ultra Low Voltage Circuits 5-SOT-23 -40 to 85 Visit Texas Instruments Buy
    LM3671MF-1.6/NOPB Texas Instruments 2MHz, 600mA Step-Down DC-DC Converter 5-SOT-23 -40 to 85 Visit Texas Instruments Buy
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    F16N Price and Stock

    Cal-Chip Electronics GMC21CG103F16NT

    CAP0805 COG .01UF 1% 16V
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    DigiKey GMC21CG103F16NT Reel 3,000 3,000
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    GMC21CG103F16NT Digi-Reel 3,000 1
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    GMC21CG103F16NT Cut Tape 3,000 1
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    Cal-Chip Electronics GMC21CG392F16NT

    CAP0805 COG 3900PF 1% 16V
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    DigiKey GMC21CG392F16NT Digi-Reel 3,000 1
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    STMicroelectronics STF16N65M5

    MOSFET N-CH 650V 12A TO220FP
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    DigiKey STF16N65M5 Tube 1,610 1
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    Avnet Americas STF16N65M5 Tube 14 Weeks 1,000
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    Mouser Electronics STF16N65M5 11,702
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    STMicroelectronics STF16N65M5 11,702 1
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    Avnet Silica STF16N65M5 650 15 Weeks 50
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    STMicroelectronics STF16N60M6

    MOSFET N-CH 600V TO220-3 FP
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    DigiKey STF16N60M6 Tube 1,174 1
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    Mouser Electronics STF16N60M6 61
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    Newark STF16N60M6 Bulk 14 1
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    STMicroelectronics STF16N60M6 61 1
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    Avnet Silica STF16N60M6 900 15 Weeks 50
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    EBV Elektronik STF16N60M6 15 Weeks 50
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    Texas Instruments LM3670MF-1.6-NOPB

    IC REG BUCK 1.6V 350MA SOT23-5
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    DigiKey LM3670MF-1.6-NOPB Digi-Reel 900 1
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    LM3670MF-1.6-NOPB Cut Tape 900 1
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    F16N Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    276 f16n

    Abstract: vc 4050 PT7C PT7C4050 2n 4409 NRZ clock recovery
    Text: Data Sheet PT7C4050 PLL with Integrated VCXO |


    Original
    PT7C4050 PT0239L 276 f16n vc 4050 PT7C PT7C4050 2n 4409 NRZ clock recovery PDF

    TH 2267

    Abstract: AN7254 AN9321 AN9322 RFD16N05 RFD16N05SM RFD16N05SM9A TB334
    Text: RFD16N05, RFD16N05SM Data Sheet 16A, 50V, 0.047 Ohm, N-Channel Power MOSFETs The RFD16N05 and RFD16N05SM N-channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon,


    Original
    RFD16N05, RFD16N05SM RFD16N05 RFD16N05SM TA09771. TH 2267 AN7254 AN9321 AN9322 RFD16N05SM9A TB334 PDF

    Untitled

    Abstract: No abstract text available
    Text: F16NK60Z STP16NK60Z, STW16NK60Z N-channel 600 V, 038 Ω, 14 A, TO-220, TO-220FP, TO-247 Zener-protected SuperMESH Power MOSFET Features Type VDSS RDS on max F16NK60Z 600 V < 0.42 Ω 14 A(1) 40 W STP16NK60Z 600 V < 0.42 Ω 14 A 190 W STW16NK60Z 600 V


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    STF16NK60Z STP16NK60Z, STW16NK60Z O-220, O-220FP, O-247 STP16NK60Z O-220 PDF

    mitsubishi plc FX64m SERIES

    Abstract: FX-48MR Melsec* fx-64mr FX-64MR mitsubishi fx plc programming cable pin wiring diagram FX-32MR FX-80MR 12v 6A variable convertor diagram MELSEC FX-32MR PLC FX-32MT
    Text: Issued March 1997 232-5216 Data Pack D Data Sheet RS Mitsubishi FX programmable logic controller The RS Mitsubishi FX programmable logic controller provides the latest in cost effective, efficiently implemented solutions to industrial control and similar applications.


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    16-bit 32-bit mitsubishi plc FX64m SERIES FX-48MR Melsec* fx-64mr FX-64MR mitsubishi fx plc programming cable pin wiring diagram FX-32MR FX-80MR 12v 6A variable convertor diagram MELSEC FX-32MR PLC FX-32MT PDF

    mitsubishi plc FX64m SERIES

    Abstract: FX-64MR YL 69 moisture FX-32MR MELSEC FX-32MR PLC Melsec* fx-64mr FX-128MR FX-80MR BCD to Binary convertor FX-48MT
    Text: Issued March 1995 019-262 Data Pack D Data Sheet RS Mitsubishi FX programmable logic controller The RS Mitsubishi FX programmable logic controller provides the latest in cost effective, efficiently implemented solutions to industrial control and similar applications.


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    32-bit mitsubishi plc FX64m SERIES FX-64MR YL 69 moisture FX-32MR MELSEC FX-32MR PLC Melsec* fx-64mr FX-128MR FX-80MR BCD to Binary convertor FX-48MT PDF

    pspice model

    Abstract: F16N06 RFD16N06SM9A AN9321 AN7254 AN7260 FIGURE13 RFD16N06 RFD16N06SM mosfet motor dc 48v
    Text: RFD16N06, RFD16N06SM S E M I C O N D U C T O R 16A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packaging • 16A, 60V JEDEC TO-251AA • rDS ON = 0.047Ω SOURCE DRAIN GATE DRAIN (FLANGE) • Temperature Compensating PSPICE Model


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    RFD16N06, RFD16N06SM O-251AA 175oC O-252AA RFD16N06 RFD16N06SM 1e-30 07e-3 19e-7) pspice model F16N06 RFD16N06SM9A AN9321 AN7254 AN7260 FIGURE13 mosfet motor dc 48v PDF

    F16N06

    Abstract: N06 MOSFET TO-252AA Package mos fet *16N06 AN9321 RFD16N06 RFD16N06SM RFD16N06SM9A TB334
    Text: [ /Title RFD16 N06, RFD16 N06SM /Subject (16A, 60V, 0.047 Ohm, N-Channel Power MOSFET) /Author () /Keywords (Harris Semiconductor, NChannel Power MOSFET, TO251AA, TO252AA) /Cre- RFD16N06, RFD16N06SM Semiconductor 16A, 60V, 0.047 Ohm, N-Channel Power MOSFET


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    RFD16 N06SM) O251AA, O252AA) RFD16N06, RFD16N06SM 1e-30 07e-3 19e-7) F16N06 N06 MOSFET TO-252AA Package mos fet *16N06 AN9321 RFD16N06 RFD16N06SM RFD16N06SM9A TB334 PDF

    Untitled

    Abstract: No abstract text available
    Text: RFD16N05, RFD16N05SM Data Sheet Title FD1 05, D16 5S bt A, V, 47 m, anwer OSTs utho eyrds ter- July 1999 16A, 50V, 0.047 Ohm, N-Channel Power MOSFETs Features The RFD16N05 and RFD16N05SM N-channel power MOSFETs are manufactured using the MegaFET process.


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    RFD16N05, RFD16N05SM RFD16N05 RFD16N05SM TA09771. PDF

    melsec fx 48mr

    Abstract: FX-48MR fed board 512 812 relay FX-80MR MELSEC FX-32MR PLC FX-24MR Melsec* fx-64mr FX-48MR connection mitsubishi Fx 24mr manual mitsubishi fx48-MR
    Text: Issued March 1994 D17244 RS Mitsubishi FX programmable logic controller The RS Mitsubishi FX programmable logic controller provides the latest in cost effective, efficiently implemented solutions to industrial control and similar applications. Historically PLCs have been used as replacements for


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    D17244 FX-40AP/AW F-16NP/NT F2-32RM F2-30GM 16-bit melsec fx 48mr FX-48MR fed board 512 812 relay FX-80MR MELSEC FX-32MR PLC FX-24MR Melsec* fx-64mr FX-48MR connection mitsubishi Fx 24mr manual mitsubishi fx48-MR PDF

    p16nk60

    Abstract: p16nk60z 10249 F16NK60Z STF16NK60Z STP16NK60Z STW16NK60Z
    Text: F16NK60Z STP16NK60Z, STW16NK60Z N-channel 600 V, 038 Ω, 14 A, TO-220, TO-220FP, TO-247 Zener-protected SuperMESH Power MOSFET Features Type VDSS RDS on max F16NK60Z 600 V < 0.42 Ω 14 A(1) 40 W STP16NK60Z 600 V < 0.42 Ω 14 A 190 W STW16NK60Z 600 V


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    STF16NK60Z STP16NK60Z, STW16NK60Z O-220, O-220FP, O-247 STP16NK60Z O-220 p16nk60 p16nk60z 10249 F16NK60Z STF16NK60Z STP16NK60Z STW16NK60Z PDF

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet PT7C4050 PLL with Integrated VCXO |


    Original
    PT7C4050 PT0239L PDF

    FX-EEPROM-4

    Abstract: F2-20gf1 Melsec* fx-64mr TRIAC 8315 Mitsubishi FX48M FX-80MR FX-48MR YL 69 moisture mitsubishi FX-48MR FX-64MR
    Text: Issued September 2001 232-5216 Data Pack D Data Sheet RS Mitsubishi FX Programmable Logic Controller The RS Mitsubishi FX programmable logic controller provides the latest in cost effective, efficiently implemented solutions to industrial control and similar applications.


    Original
    F-16NP/NT F2-32RM F2-30GM 16-bit 32-bit FX-EEPROM-4 F2-20gf1 Melsec* fx-64mr TRIAC 8315 Mitsubishi FX48M FX-80MR FX-48MR YL 69 moisture mitsubishi FX-48MR FX-64MR PDF

    f16n05

    Abstract: RFD16N05SM9A AN7254 AN7260 AN9321 AN9322 RFD16N05 RFD16N05SM
    Text: RFD16N05, RFD16N05SM S E M I C O N D U C T O R 16A, 50V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packaging JEDEC TO-251AA • 16A, 50V SOURCE DRAIN GATE • rDS ON = 0.047Ω • Temperature Compensating PSPICE Model


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    RFD16N05, RFD16N05SM O-251AA 175oC O-252AA RFD16N05 RFD16N05SM 1e-30 07e-3 19e-7) f16n05 RFD16N05SM9A AN7254 AN7260 AN9321 AN9322 PDF

    65e9 transistor

    Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
    Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12


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    1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note PDF

    F16NM50N

    Abstract: STB16NM50N STF16NM50N STI16NM50N STP16NM50N STW16NM50N W16NM50N 624s
    Text: STB16NM50N - STF/I16NM50N STP16NM50N - STW16NM50N N-channel 500 V - 0.21 Ω - 15 A MDmesh II Power MOSFET D2PAK - I2PAK - TO-220 - TO-247- TO-220FP Features VDSS @Tjmax Type RDS(on) max ID 3 3 12 1 STB16NM50N 550 V 0.26 Ω 15 A STI16NM50N 550 V 0.26 Ω


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    STB16NM50N STF/I16NM50N STP16NM50N STW16NM50N O-220 O-247- O-220FP STB16NM50N STI16NM50N STF16NM50N F16NM50N STF16NM50N STI16NM50N STW16NM50N W16NM50N 624s PDF

    f16n05

    Abstract: AN7254 AN9321 AN9322 RFD16N05 RFD16N05SM RFD16N05SM9A TB334
    Text: RFD16N05, RFD16N05SM Data Sheet 16A, 50V, 0.047 Ohm, N-Channel Power MOSFETs The RFD16N05 and RFD16N05SM N-channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon,


    Original
    RFD16N05, RFD16N05SM RFD16N05 RFD16N05SM TA09771. f16n05 AN7254 AN9321 AN9322 RFD16N05SM9A TB334 PDF

    MDG06

    Abstract: MDG07
    Text: nou rri •M F16N SOP Type Part No. MDGOI MDG02 MDG06 MDG07 Device 1, 2 3, 4 5, 6 1. 4 3, 1. 4, 1, 3, 5, 2 5, 6 2, 3 5, 6 2 4 6 V ceo (V) Ic (A) 10 -1 0 -1 0 10 -1 0 -1 0 10 -1 0 10 50 -1 0 2 -2 -2 2 -2 -2 2 -2 2 0.5 -2 Pd (mW) Diode hpE (G|) 120—560 490


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    MDG02 MDG06 MDG07 MF16N MDG02 MDG06_ MDG07_ MF16N MDG06 MDG07 PDF

    Untitled

    Abstract: No abstract text available
    Text: interrii RFD16N05, RFD16N05SM D ata S h e e t 16A, 50V, 0.047 Ohm, N-Channel Power MOSFETs The RFD16N05 and RFD16N05SM N-channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon,


    OCR Scan
    RFD16N05, RFD16N05SM RFD16N05 RFD16N05SM TA09771. AN7254 AN7260. PDF

    304E3

    Abstract: rfd16n05sm9a 66E-6
    Text: RFD16N05, RFD16N05SM HARRIS S E M I C O N D U C T O R 16A, 50V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packaging JEDEC TO-251AA • 16A, 50V • r DS O N = 0-047U • Temperature Compensating PSPICE Model ORAIN (FLANGE)


    OCR Scan
    RFD16N05, RFD16N05SM O-251AA 0-047U O-252AA RFD16N05 RFD16N05SM O-251AA O-252AA F16N05 304E3 rfd16n05sm9a 66E-6 PDF

    F16N06

    Abstract: 00u2 107E3 *16N06 16N06
    Text: RFD16N06, RFD16N06SM fu HARRIS S E M I C O N D U C T O R 16A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packaging JEDEC TO-251AA • 16A, 6 0V • rDS<ON = 0 .0 4 7 U D R A IN F L A N G E ) • Temperature Compensating PSPICE Model


    OCR Scan
    RFD16N06, RFD16N06SM O-251AA O-252AA RFD16N06 RFD16N06SM O-251AA O-252AA F16N06 F16N06 00u2 107E3 *16N06 16N06 PDF

    TA6270F

    Abstract: MDA01 MDE01 mfw10 transistor A1RB DJ01 MPL2 MDC02
    Text: Composite Transistor Arrays Multi Devices Being housed in a miniaturized flat package, suitable for camera and VIDEO motor drive application. Can be configured as motor forward and reverse bridge circuit and help to reduce motor drive section. Tape and reel assists automated insertion.


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    PDF

    F16N

    Abstract: 25 j 3 pin
    Text: Packages Available • M in i mold type .6 r Body Unit : mm 1 i dimension j r 2.0 '( 0 .8 J r 2.9 I .25 1608 (0 6 03 ) 21 2 5 (0805) 2913 (1 1 05 ) - - - Actual size UMT EM 3 i r j, S S T (U. S. / E u r o p e a n S O T -2 3 ) 3-Pin Enlarged x 3.0) UM4 5-Pin


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    MFW10 F16N 25 j 3 pin PDF

    Untitled

    Abstract: No abstract text available
    Text: Hormis S RFD16N06, RFD16N06SM Semiconductor y 16A, 60V, 0.047 Ohm, N-Channel Power MOSFET September 1998 Features Description • 16A, 60V These N-Channel power MOSFETs are manufactured using the MegaFET process. This process which uses feature sizes approaching those of LSI integrated circuits, gives opti­


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    RFD16N06, RFD16N06SM 1e-10 1e-30 07e-3 19e-7) 45e-3 66e-5) 25e-3 PDF

    Untitled

    Abstract: No abstract text available
    Text: RFD16N05, RFD16N05SM S e m iconductor Data Sheet 16A, 50 V, 0.047 Ohm, N-Channel Power MOSFETs The RFD16N05 and RFD16N05SM N-channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon,


    OCR Scan
    RFD16N05, RFD16N05SM RFD16N05 RFD16N05SM TA09771. 047i2 PDF