EMI feed-thru
Abstract: Johanson Dielectrics SMT F18 marking code F15 472/103 500F15W102KV4T
Text: www.johansondielectrics.com Multilayer Ceramic Feedthru Chip Capacitors Today EMI Feedthru Filter Capacitors provide one of the most advantageous EMI filtering characteristics compared to some high cost/bigger size, complex design alternatives. Although SMT Feedthru Capacitors use the same production
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Untitled
Abstract: No abstract text available
Text: www.johansondielectrics.com Multilayer Ceramic Feedthru Chip Capacitors Today EMI Feedthru Filter Capacitors provide one of the most advantageous EMI filtering characteristics compared to some high cost/bigger size, complex design alternatives. Although SMT Feedthru Capacitors use the same production
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J476
Abstract: 0E128 capacitor j476 8J1234 Decoupling Device for High Frequency
Text: DECOUPLING DEVICE FOR HIGH FREQUENCY F11 Higher Capacitance. Low ESR, High ripple current. Resin-molded Chip. Designed for surface mounting on high density PC board. Load life of 5000 hours at +105°C. Adapted to the RoHS directive 2002/95/EC . Type numbering system (Example : 2.5V 220µF)
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2002/95/EC)
120Hz)
180mm
330mm
50MIN.
8100X-1
J476
0E128
capacitor j476
8J1234
Decoupling Device for High Frequency
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capacitor J336
Abstract: J336 capacitor Marking J336 J33-6 F180G226MCC marking J336
Text: DECOUPLING DEVICE FOR HIGH FREQUENCY F18 Higher Capacitance. Low ESR, Low ESL, High ripple current. Resin-molded Chip. Designed for surface mounting on high density PC board. Two terminals product for high frequency. Compliant to the RoHS directive 2002/95/EC .
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2002/95/EC)
120Hz)
500hours
8100Y
capacitor J336
J336
capacitor Marking J336
J33-6
F180G226MCC
marking J336
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DECT RF Transceiver 1.9 ghz
Abstract: C1995 LMX3160 VBH48A circuit diagram of MOD 64 counter
Text: August 1995 LMX3160 Single Chip Radio Transceiver General Description The Single Chip Radio Transceiver is a monolithic integrated radio transceiver optimized for use in the Digital European Cordless Telecommunications DECT system as well as other mobile telephony and wireless communications applications It is fabricated using National’s ABiC V BiCMOS
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LMX3160
DECT RF Transceiver 1.9 ghz
C1995
VBH48A
circuit diagram of MOD 64 counter
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LB2003
Abstract: No abstract text available
Text: Series F18 25-105Amp • SCR/DIODE Modules • Industry Standard Package and Circuits Modules come in an industry standard package, offering nine circuits that can be used singly or as power control building blocks. All models feature highly efficient thermal management
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25-105Amp
E72445)
LB2003
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LB2003
Abstract: 200 amp scr
Text: Series F18 25-105 Amp • SCR/DIODE Modules • Industry Standard Package and Circuits Modules come in an industry standard package, offering nine circuits that can be used singly or as power control building blocks. All models feature highly efficient thermal management
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E72445)
LB2003
200 amp scr
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E72445
Abstract: scr 1000 amps
Text: S eries F18 25-105Amp • SCR/DIODE Modules • Industry Standard Package and Circuits Modules come in an industry standard package, offering nine circuits that can be used singly or as power control building blocks. All models feature highly efficient thermal management
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25-105Amp
E72445)
E72445
scr 1000 amps
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E72445
Abstract: F1892SD1200
Text: Series F18 25-105Amp • SCR/DIODE Modules • Industry Standard Package and Circuits • Power Control Building Blocks PART NUMBER IDENTIFICATION Series Type F18 -Case style Example: F1892SD1200 Current 27 - 25 Amps 42 - 40 Amps 57 - 55 Amps 92 - 90 Amps
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25-105Amp
F1892SD1200
E72445)
E72445
F1892SD1200
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900 mhz av transmitter receiver
Abstract: C1996 LMX3161 LMX3161VBH VBH48A e200x DECT RF Transceiver 1.9 ghz NATIONAL RX F2
Text: September 1996 LMX3161 Single Chip Radio Transceiver General Description The LMX3161 Transceiver is a monolithic integrated radio transceiver optimized for use in the Digital Enhanced Cordless Telecommunications DECT system It is fabricated using National’s ABiC V BiCMOS process (fT e 18 GHz)
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LMX3161
900 mhz av transmitter receiver
C1996
LMX3161VBH
VBH48A
e200x
DECT RF Transceiver 1.9 ghz
NATIONAL RX F2
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f1892sd120
Abstract: No abstract text available
Text: Series F18 25-105Amp • SCR/DIODE Modules • Industry Standard Package and Circuits • Power Control Building Blocks PART NUMBER IDENTIFICATION Series Type F18-Case style Example: F1892SD1200 Current 27 - 25 Amps 42 - 40 Amps 57 - 55 Amps 92 - 90 Amps 107 - 105 Amps
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25-105Amp
E72445)
258-5057Tech
f1892sd120
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application of scr 1000 amps with circuit diagram
Abstract: schematic transistor modul trigger ssr schematic circuit marking 2U diode scr 1000 amps marking 2u K1 Series DI 380 Transistor K1 Series 480 400 sdk 25/0
Text: Series F18 25-105Amp • SCR/DIODE Modules • Industry Standard Package and Circuits • Power Control Building Blocks PART NUMBER IDENTIFICATION Series Type F18 -Case style Example: F1892SD1200 Current 27 - 25 Amps 42 - 40 Amps 57 - 55 Amps 92 - 90 Amps
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25-105Amp
F1892SD1200
E72445)
SJ/T11364
SJ/T11364
application of scr 1000 amps with circuit diagram
schematic transistor modul trigger
ssr schematic circuit
marking 2U diode
scr 1000 amps
marking 2u
K1 Series
DI 380 Transistor
K1 Series 480 400
sdk 25/0
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block diagram of dual 12v power supply
Abstract: MARKING PM5 "NOR Flash" 1996 protect
Text: ADVANCE MT28SF002 256K x 8 FLASH MEMORY FLASH MEMORY 256K x 8 SMARTVOLTAGE, BOOT BLOCK FEATURES PIN ASSIGNMENT Top View • Five erase blocks: 16KB boot block (protected) Two 8KB parameter blocks Two main memory blocks • Deep Power-Down Mode: 8µA at 5V VCC; 2µA at
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MT28SF002
100ns
110ns,
150ns
40-Pin
block diagram of dual 12v power supply
MARKING PM5
"NOR Flash" 1996 protect
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S128K32
Abstract: ACT-S128K32 ACT-S128K32V 5962-9559509HMX 5962-9318710H4X
Text: ACT-S128K32 High Speed 4 Megabit SRAM Multichip Module Features • 4 Low Power CMOS 128K x 8 SRAMs in one MCM ■ Overall configuration as 128K x 32 ■ Input and Output TTL Compatible ■ 17, 20, 25, 35, 45 & 55ns Access Times, 15ns Available by Special Order
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ACT-S128K32
MIL-STD-883
ACT-S128K32
SCD1659
S128K32
ACT-S128K32V
5962-9559509HMX
5962-9318710H4X
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Untitled
Abstract: No abstract text available
Text: OBSOLETE 256K x 8 BOOT BLOCK FLASH MEMORY MT28F002B1 FLASH MEMORY SMARTVOLTAGE FEATURES PIN ASSIGNMENT Top View • Five erase blocks: 16KB boot block (protected) Two 8KB parameter blocks Two main memory blocks • SmartVoltage Technology (SVT): 3.3V ±0.3V or 5V ±10% VCC
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MT28F002B1
110ns
40-Pin
60ns/90ns
80ns/110ns
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smd code F18
Abstract: act-s512k32n 5962-9461110HTC ACT-S512K32N-017P7Q 5962-9461110 CQFP 80 footprint cqfp 280
Text: ACT–S512K32 High Speed 16 Megabit SRAM Multichip Module Features • 4 Low Power CMOS 512K x 8 SRAMs in one MCM ■ Factory configured as 512K x 32; User configurable as 1M x 16 or 2M x 8 ■ Input and Output TTL & CMOS Compatible Design ■ Fast 17,20,25,35,45,55ns Access Times
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S512K32
MIL-PRF-38534
MIL-STD-883
SCD1660
smd code F18
act-s512k32n
5962-9461110HTC
ACT-S512K32N-017P7Q
5962-9461110
CQFP 80
footprint cqfp 280
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ACT-F2M32
Abstract: No abstract text available
Text: ACT–F2M32A High Speed 64 Megabit Sector Erase FLASH Multichip Module Preliminary CIRCUIT TECHNOLOGY Features www.aeroflex.com/act1.htm • 4 Low Voltage/Power AMD 2M x 8 FLASH Die in One ■ Ready/Busy output RY/BY – Hardware method for MCM Package ■ Overall Configuration is 2M x 32
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F2M32A
MIL-PRF-38534
MIL-STD-883
ACT-F2M32
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ACT-F2M32A
Abstract: CQFP 240 Aeroflex
Text: ACT–F2M32A High Speed 64 Megabit Sector Erase FLASH Multichip Module CIRCUIT TECHNOLOGY Features www.aeroflex.com/act1.htm • 4 Low Voltage/Power AMD 2M x 8 FLASH Die in One ■ Ready/Busy output RY/BY – Hardware method for MCM Package ■ Overall Configuration is 2M x 32
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F2M32A
MIL-STD-883
SCD1666A
ACT-F2M32A
CQFP 240 Aeroflex
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E72445
Abstract: Diode SCR 100AMP SCR diode k1 f1892sd1200
Text: series F18 25-100Amp • Diode, SCR/Diode Modules Modules come in an industry standard package, offering nine circuits that can be used singly or as power control building blocks. All models feature highly efficient thermal management for greatly extended cycle life and are UL
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25-100Amp
E72445.
V300A
Ri057
E72445
Diode SCR
100AMP SCR
diode k1
f1892sd1200
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0.1uf ceramic capacitor
Abstract: No abstract text available
Text: NJU7741/44 LOW DROPOUT VOLTAGE REGULATOR ! GENERAL DISCRIPTION NJU7741/44 is a low dropout voltage regulator with ON/OFF control and Output shunt switch. Advanced CMOS technology achieves high ripple rejection and ultra low quiescent current. It is suitable for reset small micro controller and other logic chips.
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NJU7741/44
NJU7741/44
NJU7744
100mA
NJU7744
0.1uf ceramic capacitor
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WT4 smd
Abstract: CQFP 240 Aeroflex WW-S700 ACT-F2M32A AMD2M CQFP
Text: F LASH Multichip Module ÛEROFLEX CIRCUIT TECHNOLOGY www.aeroflex.com/act1 .htm Ready/Busy output RY/BY - Hardware method for • 4 Low Voltage/Power AMD 2M x 8 FLASH Die In One detection of program or erase cycle completion MCM Package Hardware RESET pin - Resets Internal state machine
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MIL-PRF-38534
MIL-STD-S83
004715b
F2M32A
WT4 smd
CQFP 240 Aeroflex
WW-S700
ACT-F2M32A
AMD2M
CQFP
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Untitled
Abstract: No abstract text available
Text: ACT-F2M32A High Speed 64 Mei ib it M i l l Sector Erase I I I FLASH Multichip Module Q ero flex CIRCUIT TECHNOLOGY www.aeroflex.com/act1 .htm Features • 4 Low Voltage/Power AMD 2M x 8 FLASH Die in One MCM Package ■ Overall Configuration is 2M x 32 ■ +5V Power Supply / +5V Programing Operation
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ACT--F2M32A
MIL-STD-883
SCD1666A
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MMi 63S141
Abstract: No abstract text available
Text: Programmable Logic Element PLE Circuit Facility Features/Benefits Ordering Information PLE • Programmable replacement for conventional TTL logic • Reduces 1C inventories and simplifies their control • Expedites and simplifies prototyping and board layout
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PLE12P8)
63RA481
PLE11P4
22AAdapter
51A-064
63S841
PLE10R8
51A-074
63RS881
MMi 63S141
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Untitled
Abstract: No abstract text available
Text: MICRON I 256K x 8 B O O T B L O C K F L ASH M E M O R Y QUANTUM D ev ices, w c . FLASH M EM O R Y mt28 foo2bi S m a rtV oltage FEATURES * Five erase blocks: 16K B b oot b lock p rotected T w o 8K B p aram eter blocks T w o m ain m em o ry blocks * S m artV o ltag e T ech n o lo g y (SVT):
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