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    Text: RF RF2125 MICRO DEVICES POWER A M P L IF IE R S HIGH PO W ER LINEAR A M PLIFIER Hum Arsenide Heterojunction Bipolar Transistor HBT process, and has been designed for use as the final RF amplifier in digital PCS phone transmitters and base sta­ tions requiring linear amplification operating between


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    RF2125 1500MHz 2200MHz. F2125 250mA. F2125 RF2125 F2125S12 PDF