AN9321
Abstract: AN9322 RFD3N08L RFD3N08LSM RFD3N08LSM9A TB334
Text: RFD3N08L, RFD3N08LSM Data Sheet 3A, 80V, 0.800 Ohm, Logic Level, N-Channel Power MOSFETs Features • 3A, 80V The RFD3N08L and RFD3N08LSM are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level 5V driving
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Original
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RFD3N08L,
RFD3N08LSM
RFD3N08L
RFD3N08LSM
AN9321
AN9322
RFD3N08LSM9A
TB334
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PDF
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AN7254
Abstract: AN7260 AN9321 AN9322 RFD3N08L RFD3N08LSM RFD3N08LSM9A F3N08L
Text: RFD3N08L, RFD3N08LSM S E M I C O N D U C T O R 3A, 80V, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packages • 3A, 80V TO-251AA SOURCE DRAIN GATE • rDS ON = 0.800Ω • Temperature Compensating PSPICE Model
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Original
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RFD3N08L,
RFD3N08LSM
O-251AA
175oC
O-252AA
RFD3N08L
RFD3N08LSM
55e-2
58e-5)
19e-3
AN7254
AN7260
AN9321
AN9322
RFD3N08LSM9A
F3N08L
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PDF
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AN9322
Abstract: AN9321 RFD3N08L RFD3N08LSM RFD3N08LSM9A TB334
Text: RFD3N08L, RFD3N08LSM Data Sheet Title FD3 8L, D3 8LS bt A, V, 00 m, gic vel, Cha el wer OSTs utho July 1999 3A, 80V, 0.800 Ohm, Logic Level, N-Channel Power MOSFETs Features The RFD3N08L and RFD3N08LSM are N-Channel enhancement mode silicon gate power field effect transistors
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Original
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RFD3N08L,
RFD3N08LSM
175oC
TB334
TA09922.
RFD3N08L
O-251AA
O-252AA
F3N08L
AN9322
AN9321
RFD3N08L
RFD3N08LSM
RFD3N08LSM9A
TB334
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PDF
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AN9321
Abstract: AN9322 RFD3N08L RFD3N08LSM RFD3N08LSM9A TB334 Intersil application notes
Text: RFD3N08L, RFD3N08LSM Data Sheet 3A, 80V, 0.800 Ohm, Logic Level, N-Channel Power MOSFETs 2836.4 • 3A, 80V • rDS ON = 0.800Ω • Temperature Compensating PSPICE Model • On Resistance vs Gate Drive Voltage Curves • Peak Current vs Pulse Width Curve
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Original
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RFD3N08L,
RFD3N08LSM
175oC
TB334
TA09922.
RFD3N08L
RFD3N08LSM
AN9321
AN9322
RFD3N08LSM9A
TB334
Intersil application notes
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PDF
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AN9321
Abstract: AN9322
Text: in te r r ii RFD3N08L, RFD3N08LSM D ata S h e e t 3A, 80V, 0.800 Ohm, Logic Level, N-Channel Power MOSFETs 2 8 3 6 .4 • 3A, 80V • rDS ON = 0.800Q • Temperature Compensating PSPICE Model • On Resistance vs Gate Drive Voltage Curves • Peak Current vs Pulse Width Curve
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OCR Scan
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RFD3N08L,
RFD3N08LSM
RFD3N08L
RFD3N08LSM
TA09922.
AN7254
AN7260.
AN9321
AN9322
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PDF
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Untitled
Abstract: No abstract text available
Text: Hormis S RFD3N08L, RFD3N08LSM Semiconductor y 3A, 80V, 0.800 Ohm, Logic Level, N-Channel Power MOSFETs juiy 1998 Features Description • 3A, 80V • UIS Rating Curve The RFD3N08L and RFD3N08LSM are N-Channel enhancement mode silicon gate power field effect transistors
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OCR Scan
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RFD3N08L,
RFD3N08LSM
RFD3N08L
RFD3N08LSM
19e-4
55e-2
58e-5)
19e-3
12e-6)
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PDF
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RF03N0
Abstract: No abstract text available
Text: RFD3N08L, RFD3N08LSM fü HARIRIS S E M I C O N D U C T O R 3A, 80V, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs December 1995 Packages Features • 3A, 80V • r DS ON T O -2 51A A SOURCE = 0.800ÎJ • Temperature Compensating PSPICE Model
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OCR Scan
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RFD3N08L,
RFD3N08LSM
RFD3N08L
RFD3N08LSM
03e-3
13e-10
1e-30
19e-4
58e-5)
RF03N0
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PDF
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