LDTD123YLT1G
Abstract: f62 current transistor marking F62 f62 transistor
Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • LDTD123YLT1G Applications Inverter, Interface, Driver 3 • Features 1 Built-in bias resistors enable the configuration of an
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LDTD123YLT1G
OT-23
LDTD123YLT1G
f62 current transistor
marking F62
f62 transistor
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f62 current transistor
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Digital transistors built-in resistors Pb-Free package is available FFeatures 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thinfilm resistors with complete isolation to allow positive biasing of the
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LDTD123YLT1G
f62 current transistor
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marking F62
Abstract: 100MHZ DTD123Y
Text: DTD123Y Bias Resistor Transistor NPN Silicon COLLECTOR 3 P b Lead Pb -Free R1 1 BASE 3 1 R2 2 EMITTER 2 SOT-23 Absolute maximum ratings (TA = 25ºC) Parameter Supply voltage Input voltage Output current Power dissipation Junction temperature Storage temperature
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DTD123Y
OT-23
-500m
100MHZ
25-Apr-08
OT-23
marking F62
100MHZ
DTD123Y
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DTD123Y
Abstract: DTD123YK DTD123YS SC-72 T146
Text: DTD123YK / DTD123YS Transistors Digital transistors built-in resistors DTD123YK / DTD123YS zExternal dimensions (Unit : mm) 2.9±0.2 DTD123YK 1.1+0.2 −0.1 1.9±0.2 0.8±0.1 0.95 0.95 (2) 0 to 0.1 2.8±0.2 1.6 +0.2 −0.1 (1) ROHM : SMT3 EIAJ : SC-59 +0.1
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DTD123YK
DTD123YS
DTD123YK
SC-59
DTD123Y
DTD123YS
SC-72
T146
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Untitled
Abstract: No abstract text available
Text: DTD123YK / DTD123YS Transistors Digital transistors built-in resistors DTD123YK / DTD123YS zExternal dimensions (Unit : mm) 2.9±0.2 DTD123YK 1.1+0.2 −0.1 1.9±0.2 0.8±0.1 0.95 0.95 (2) 0 to 0.1 2.8±0.2 1.6 +0.2 −0.1 (1) ROHM : SMT3 EIAJ : SC-59 +0.1
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DTD123YK
DTD123YS
DTD123YK
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Untitled
Abstract: No abstract text available
Text: DTD123YK NPN 500mA 50V Digital Transistors Datasheet Bias Resistor Built-in Transistors lOutline Parameter Value VCC 50V 500mA 2.2kW 10kW IC(MAX.) R1 R2 SMT3 OUT IN GND DTD123YK SOT-346 (SC-59) lFeatures 1) Built-In Biasing Resistors lInner circuit 2) Built-in bias resistors enable the configuration of
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DTD123YK
500mA
500mA
OT-346
SC-59)
R1120A
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T146
Abstract: DTD123YK
Text: Digital transistors built-in resistors DTD123YK zDimensions (Unit : mm) 2.9 DTD123YK 1.1 0.4 0.8 (3) (2) (1) 0.95 0.95 0.15 1.9 ROHM : SMT3 EIAJ : SC-59 0.3Min. zFeatures 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors
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DTD123YK
SC-59
R0039A
T146
DTD123YK
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Untitled
Abstract: No abstract text available
Text: DTD123YK NPN 500mA 50V Digital Transistors Datasheet Bias Resistor Built-in Transistors lOutline Parameter Value VCC 50V 500mA 2.2kW 10kW IC(MAX.) R1 R2 SMT3 OUT IN GND DTD123YK SOT-346 (SC-59) lFeatures 1) Built-In Biasing Resistors lInner circuit 2) Built-in bias resistors enable the configuration of
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DTD123YK
500mA
DTD123YK
OT-346
SC-59)
DTB123YK
R1120A
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transistor irf620
Abstract: No abstract text available
Text: IRF620 Data Sheet Title F62 bt 0A, 0V, 00 m, June 1999 5.0A, 200V, 0.800 Ohm, N-Channel Power MOSFET Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of
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IRF620
TB334
IRF620
transistor irf620
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tico 732
Abstract: hengstler tico 732 pulse counter hengstler Danaher 66266-3 Hengstler relay F211 F221 F222 1310301
Text: Benutzerhandbuch User Manual Zweikanaliger Multifunktionszähler Bidirectional Multifunction-Counter tico 732 0. 1. 1.1 1.2 1.3 1.4 2. 2.1 2.2 2.3 2.4 2.5 3. 3.1 3.2 3.3 4. 4.1 4.2 4.3 4.4 4.5 5. 5.1 5.2 5.3 5.4 5.5 6. 6.1 6.2 6.3 6.4 6.5 7. 8. Sicherheitshinweise .
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D-78550
D-78554
tico 732
hengstler tico 732
pulse counter hengstler
Danaher
66266-3
Hengstler relay
F211
F221
F222
1310301
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Untitled
Abstract: No abstract text available
Text: 8050S SEMICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS LID . TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER * Complement to 8550S * Collector C urrent: Ic=500mA * Collector D issipation: Pc=225mW Tc=25°C ABSOLUTE MAXIMUM RATINGS a t Tan*-25°C
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8050S
8550S
500mA
225mW
062in
300uS,
100uA
500mA
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marking F62
Abstract: M7025 f62 current transistor
Text: KSA1182 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER • Complement to SOT-23 KSC2859 ABSOLUTE MAXIMUM RATINGS TA“ 2 5 t C haracteristic Collector-Base Voltage Collector-Em itter Voltage Emitter-Base Voltage Collector Current Collector Dissipation
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KSA1182
KSC2859
OT-23
-100mA
-400mA
-100mA,
-10mA
-20mA,
marking F62
M7025
f62 current transistor
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K 4005 transistor
Abstract: k5012 f62 current transistor
Text: Transistors Digital transistors built-in resistors DTD123YK / DTD123YS •F e a tu re s 1) B uilt-in bias resistors enable the configuration of an inverter circuit without connecting external input re sistors (see the e quivalent cir cuit). 2) The bias resistors consist of thinfilm resistors with complete isola
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DTD123YK
DTD123YS
DTD123YK
50mA/2
100MHz
DTD123YS
K 4005 transistor
k5012
f62 current transistor
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transistors marking ND
Abstract: marking F62
Text: DTD123YK Digital transistor, NPN, with 2 resistors Features Dimensions Units : mm • • • • • available in an SMT3 (SMT, SC-59) package package marking: DTD123VK; F62 a built-in bias resistor allows inverter circuit configuration without external
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DTD123YK
SC-59)
DTD123VK;
10kfl
transistors marking ND
marking F62
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Untitled
Abstract: No abstract text available
Text: Transistors Digital transistors built-in resistors DTD123YK / DTD123YS • F e a tu re s •E x te rn a l dim ensions (Units: mm) 1 ) B u ilt-in bias re s is to rs e n a b le the con fig u ra tio n of an inverter circu it DTD123YK 1;1+0-2 - 0.1 w ithout con ne cting external input
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DTD123YK
DTD123YS
SC-59
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Untitled
Abstract: No abstract text available
Text: SILICON TRANSISTOR 2SA1608 HIGH FREQUENCY AMPLIFIER AND SWITCHING PNP SILICON EPITAXIAL TRANSISTOR FEA TU RES PACKAGE DIMENSIONS in m illim e te rs • High fT : f T =400 MHz • Complementary to 2SC3739 2 . 110.1 1 .2 5 ± 0 .1 A B S O L U T E M AXIM UM R A T IN G S
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2SA1608
2SC3739
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI TRAN SISTOR M O D U LES ! HIGH POWER SWITCHING U SE INSULATED TYPE f QM75DY-HB I j QNI750Y-HB • Ic • Vcex Collector current.75A Collector-emitter voltage. 600V • hFE DC current gain. 750
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QM75DY-HB
QNI750Y-HB
E80276
E80271
QM75DY-HB
15QmAIS
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Untitled
Abstract: No abstract text available
Text: Transistors Digital transistors built-in resistors DTD123YK / DTD123YS •F e a tu re s •E x te rn a l dimensions (Units: mm) 1 ) Built-in bias resistors en ab le the configuration of an inverter circuit 2.9±0.2 DTD123YK + 1 1 0.2 ; -0.1 1.9+0.2 without connecting external input
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DTD123YK
DTD123YS
DTD123YK
SC-59
0Dlb713
O-220FN
O-220FN
O220FP
T0-220FP,
O-220FP.
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2ss9014
Abstract: ss8015 A 671 transistor SS9013 SS9014 U007 transistor ss9014 SS9012 T-31-21 50nr
Text: IM E D SAMSUNG SEM ICONDUCTOR . INC I 7*^4142 " SS9012 4 I 00073*1 T - f i ~ 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. • • • • High total power dissipation: PT=825mW High Collector Current. (Ic = -500mA) Complementary to SS9013
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71b4142
SS9012
825mW)
-500mA)
SS9013
Breakdo4142
SS9014
fe-14
1-10C
2ss9014
ss8015
A 671 transistor
SS9013
U007
transistor ss9014
T-31-21
50nr
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E78996 rectifier module
Abstract: irfk4h350 IRFK4H351
Text: HE D I 4ÛS5452 OOQTGlc? 4 | IN TERN ATION AL Data Sheet No. PD-9.448B R EC TIFIER T-39-27 INTERNATIONAL RECTIFIER RECOGNIZED I « R HEXPAK POWER MODULE IRFK4H3SO IRFK4H351 File no E78996 Isolated Base Power HEXFET Parallel Assembly 400 Volt, 75 mil HEXPAK
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S5452
E78996
IRFK4H351
E78996 rectifier module
irfk4h350
IRFK4H351
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2920A
Abstract: NS2N A2JA 2N2920A 2N2913 2N2920
Text: mmm types 2N2813 t h r u 2N29?o mZSMA 2N2972 THRU 2N2979 DUAL N P-N SILICON TRANSISTORS B U L L E T IN N O . D L -S 6 9 1 1 1 6 5 . M A R C H 1969 A BR O A D F A M IL Y OF D U A L T R A N S IS T O R S R ECO M M EN D ED FO R Differential Amplifiers High-Gain, Low-Noise, Audio Amplifiers
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2N2813
2N2972
2N2979
2920A
NS2N
A2JA
2N2920A
2N2913
2N2920
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equivalent transistor TT 3034
Abstract: transistor TT 3034 A771 TRANSISTOR transistor b722 124e transistor Transistor b865 tc 144e DTC1132 B718 TRANSISTOR 124E
Text: DTA/DTB/DTC/DTD DIGITAL TRANSISTOR APPLICATION: • EQUIVALENT CIRCUITS: Inverter, D river & Interface Circuits FEATURES; w w w . Datasheet. i n • Replaces up to three parts 1 transistor & 2 resis tors with one part • Available in a variety of surface mount or leaded
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B861 transistor
Abstract: equivalent transistor TT 3034 transistor b722 b863 PK2222A a774 transistor TT 3034 tc 144e TRANSISTOR 124E A771 TRANSISTOR
Text: R OJ N m DTA/DTB/DTC/DTD I DIGITAL TRANSISTOR APPLICATION: • j EQUIVALENT CIRCUITS: Inverter, D river & Interface Circuits FEA T U R ES; • R ep laces up to three parts 1 transistor & 2 resis tors with one part • Available in a variety of surface mount or leaded
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J/U13
B861 transistor
equivalent transistor TT 3034
transistor b722
b863
PK2222A
a774
transistor TT 3034
tc 144e
TRANSISTOR 124E
A771 TRANSISTOR
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transistor b722
Abstract: b863 tc 144e Transistor b861 B861 equivalent transistor TT 3034 A771 TRANSISTOR B861 transistor DTC103 transistor TT 3034
Text: DTA/DTB/DTC/DTD DIGITAL TRANSISTOR APPLICATION: • EQUIVALENT CIRCUITS: Inverter, Driver & Interface Circuits FEATURES; w w w . Datasheet. i n • Replaces up to three parts 1 transistor & 2 resis tors with one part • Available in a variety of surface mount or leaded
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