F62 TRANSISTOR Search Results

F62 TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

F62 TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
transistor irf620 Abstract: No abstract text available Text: IRF620 Data Sheet Title F62 bt 0A, 0V, 00 m, June 1999 5.0A, 200V, 0.800 Ohm, N-Channel Power MOSFET Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of	Original	IRF620 TB334 IRF620 transistor irf620	PDF
f62 current transistor Abstract: No abstract text available Text: LESHAN RADIO COMPANY, LTD. Digital transistors built-in resistors Pb-Free package is available FFeatures 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thinfilm resistors with complete isolation to allow positive biasing of the	Original	LDTD123YLT1G f62 current transistor	PDF
LDTD123YLT1G Abstract: f62 current transistor marking F62 f62 transistor Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • LDTD123YLT1G Applications Inverter, Interface, Driver 3 • Features 1 Built-in bias resistors enable the configuration of an	Original	LDTD123YLT1G OT-23 LDTD123YLT1G f62 current transistor marking F62 f62 transistor	PDF
marking F62 Abstract: 100MHZ DTD123Y Text: DTD123Y Bias Resistor Transistor NPN Silicon COLLECTOR 3 P b Lead Pb -Free R1 1 BASE 3 1 R2 2 EMITTER 2 SOT-23 Absolute maximum ratings (TA = 25ºC) Parameter Supply voltage Input voltage Output current Power dissipation Junction temperature Storage temperature	Original	DTD123Y OT-23 -500m 100MHZ 25-Apr-08 OT-23 marking F62 100MHZ DTD123Y	PDF
SC-59 Abstract: k2647 transistor F24 07 transistor sc59 marking SC59 transistor w 04 59 dtc123jka sc-59 g21 Transistor K2522 MUN2211 Text: D I G I TA L T R A N S I S T O R A R R AY S SINGLE NPN TRANSISTOR CIRCUITS • COMPLETE SUB–CIRCUITS IN A SINGLE PACKAGE: SAVE PLACEMENT COSTS, INCREASES RELIABILITY FUNCTIONAL EQUIVALENTS PART NO MUN2211 MUN2212 MUN2213 ROHM DTC114EKA DTC124EKA DTC144EKA	Original	MUN2211 MUN2212 MUN2213 DTC114EKA DTC124EKA DTC144EKA SC-75A, SC-70, SC-59 SC-75A SC-59 k2647 transistor F24 07 transistor sc59 marking SC59 transistor w 04 59 dtc123jka sc-59 g21 Transistor K2522	PDF
k2647 Abstract: SC-59 transistor F24 07 dtc123jka sc-59 K2522 h03 diode diode Marking H27 Text: D I G I TA L T R A N S I S T O R A R R AY S SINGLE NPN TRANSISTOR CIRCUITS • COMPLETE SUB–CIRCUITS IN A SINGLE PACKAGE: SAVE PLACEMENT COSTS, INCREASES RELIABILITY FUNCTIONAL EQUIVALENTS PART NO MUN2211 MUN2212 MUN2213 ROHM DTC114EKA DTC124EKA DTC144EKA	Original	MUN2211 MUN2212 MUN2213 DTC114EKA DTC124EKA DTC144EKA SC-75A, SC-70, SC-59 SC-75A k2647 SC-59 transistor F24 07 dtc123jka sc-59 K2522 h03 diode diode Marking H27	PDF
DTD123Y Abstract: DTD123YK DTD123YS SC-72 T146 Text: DTD123YK / DTD123YS Transistors Digital transistors built-in resistors DTD123YK / DTD123YS zExternal dimensions (Unit : mm) 2.9±0.2 DTD123YK 1.1+0.2 −0.1 1.9±0.2 0.8±0.1 0.95 0.95 (2) 0 to 0.1 2.8±0.2 1.6 +0.2 −0.1 (1) ROHM : SMT3 EIAJ : SC-59 +0.1	Original	DTD123YK DTD123YS DTD123YK SC-59 DTD123Y DTD123YS SC-72 T146	PDF
Untitled Abstract: No abstract text available Text: DTD123YK / DTD123YS Transistors Digital transistors built-in resistors DTD123YK / DTD123YS zExternal dimensions (Unit : mm) 2.9±0.2 DTD123YK 1.1+0.2 −0.1 1.9±0.2 0.8±0.1 0.95 0.95 (2) 0 to 0.1 2.8±0.2 1.6 +0.2 −0.1 (1) ROHM : SMT3 EIAJ : SC-59 +0.1	Original	DTD123YK DTD123YS DTD123YK	PDF
Untitled Abstract: No abstract text available Text: DTD123YK NPN 500mA 50V Digital Transistors Datasheet Bias Resistor Built-in Transistors lOutline Parameter Value VCC 50V 500mA 2.2kW 10kW IC(MAX.) R1 R2 SMT3 OUT IN GND DTD123YK SOT-346 (SC-59) lFeatures 1) Built-In Biasing Resistors lInner circuit 2) Built-in bias resistors enable the configuration of	Original	DTD123YK 500mA 500mA OT-346 SC-59) R1120A	PDF
T146 Abstract: DTD123YK Text: Digital transistors built-in resistors DTD123YK zDimensions (Unit : mm) 2.9 DTD123YK 1.1 0.4 0.8 (3) (2) (1) 0.95 0.95 0.15 1.9 ROHM : SMT3 EIAJ : SC-59 0.3Min. zFeatures 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors	Original	DTD123YK SC-59 R0039A T146 DTD123YK	PDF
Untitled Abstract: No abstract text available Text: DTD123YK NPN 500mA 50V Digital Transistors Datasheet Bias Resistor Built-in Transistors lOutline Parameter Value VCC 50V 500mA 2.2kW 10kW IC(MAX.) R1 R2 SMT3 OUT IN GND DTD123YK SOT-346 (SC-59) lFeatures 1) Built-In Biasing Resistors lInner circuit 2) Built-in bias resistors enable the configuration of	Original	DTD123YK 500mA DTD123YK OT-346 SC-59) DTB123YK R1120A	PDF
rkm 33 transistor Abstract: g1k bc848b rkm transistor DTB133HKA DTD133HKA MMST8598 TRANSISTOR MARKING CODE R2A rkm 35 transistor 2SA1885 marking W8 transistor Text: Abbreviated markings on mini-mold transistors Transistors Abbreviated markings on mini-mold transistors !MPT3 labels The label on the MPT3 packages indicates the product, hFE rank, and month of manufacture using 4 letters. Codes B and AF indicate products.	Original	IMB11A IMB16 IMB17A IMD10A IMD14 IMD16A IMH10A IMH11A IMH14A IMH15A rkm 33 transistor g1k bc848b rkm transistor DTB133HKA DTD133HKA MMST8598 TRANSISTOR MARKING CODE R2A rkm 35 transistor 2SA1885 marking W8 transistor	PDF
113 marking code transistor ROHM Abstract: DTDS14GP DTB133HKA rkm transistor 2SC5274 datasheet FMC1A rkm 33 transistor FMC1A rkm 24 DTD133HKA Text: Abbreviated markings on mini-mold transistors Transistors Abbreviated markings on mini-mold transistors !MPT3 labels The label on the MPT3 packages indicates the product, hFE rank, and month of manufacture using 4 letters. Codes B and AF indicate products.	Original		PDF
transistors marking ND Abstract: marking F62 Text: DTD123YK Digital transistor, NPN, with 2 resistors Features Dimensions Units : mm • • • • • available in an SMT3 (SMT, SC-59) package package marking: DTD123VK; F62 a built-in bias resistor allows inverter circuit configuration without external	OCR Scan	DTD123YK SC-59) DTD123VK; 10kfl transistors marking ND marking F62	PDF

marking F62 Abstract: M7025 f62 current transistor Text: KSA1182 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER • Complement to SOT-23 KSC2859 ABSOLUTE MAXIMUM RATINGS TA“ 2 5 t C haracteristic Collector-Base Voltage Collector-Em itter Voltage Emitter-Base Voltage Collector Current Collector Dissipation	OCR Scan	KSA1182 KSC2859 OT-23 -100mA -400mA -100mA, -10mA -20mA, marking F62 M7025 f62 current transistor	PDF
K 4005 transistor Abstract: k5012 f62 current transistor Text: Transistors Digital transistors built-in resistors DTD123YK / DTD123YS •F e a tu re s 1) B uilt-in bias resistors enable the configuration of an inverter circuit without connecting external input re sistors (see the e quivalent cir cuit). 2) The bias resistors consist of thinfilm resistors with complete isola	OCR Scan	DTD123YK DTD123YS DTD123YK 50mA/2 100MHz DTD123YS K 4005 transistor k5012 f62 current transistor	PDF
Untitled Abstract: No abstract text available Text: SILICON TRANSISTOR FA1L3Z M EDIUM SPEED SW ITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR M IN I MOLD FEATURES PACKAGE DIMENSIONS • in m N lim «t«rs Resistor Built-in TYPE B o— \W ~ - R i = 4.7 k n *1 • Complementary to FN1L3Z ABSOLUTE M AXIM U M RATINGS	OCR Scan		PDF
Untitled Abstract: No abstract text available Text: Transistors Digital transistors built-in resistors DTD123YK / DTD123YS • F e a tu re s •E x te rn a l dim ensions (Units: mm) 1 ) B u ilt-in bias re s is to rs e n a b le the con fig u ra tio n of an inverter circu it DTD123YK 1;1+0-2 - 0.1 w ithout con ne cting external input	OCR Scan	DTD123YK DTD123YS SC-59	PDF
Untitled Abstract: No abstract text available Text: 101 Surface Mount Devices High Voltage Transistors Ratings Type Package v CEO V v CBO V typ MHz Pinout See Section VII 3 0 /5 3 0 /5 3 0 /5 5 0 /5 60 60 60 100 AE R F F 10/1 200 F 5 0 /5 10/1 2 0 /2 2 0 /2 100 F 200 50 50 F F R 3 0 /5 60 AE 3 0 /5 3 0 /5 2 0 /2	OCR Scan	BST15 BTA93 PZTA93 BST16 BTA92 PXTA92 PZTA92	PDF
Untitled Abstract: No abstract text available Text: SILICON TRANSISTOR 2SA1608 HIGH FREQUENCY AMPLIFIER AND SWITCHING PNP SILICON EPITAXIAL TRANSISTOR FEA TU RES PACKAGE DIMENSIONS in m illim e te rs • High fT : f T =400 MHz • Complementary to 2SC3739 2 . 110.1 1 .2 5 ± 0 .1 A B S O L U T E M AXIM UM R A T IN G S	OCR Scan	2SA1608 2SC3739	PDF
sot-23 MARKING CODE ZA Abstract: b0808 BCB47B BCB17-16 marking za sot89 2SB0151K marking k5 sot89 SOT 86 MARKING E4 n33 SOT-23 10Y sot-23 Text: SURFACE-MOUNTED DEVICE MARKINGS Because of their smali size, it's not possible to show types/ values on most surface-mounted components. The following tables show the code markings used to identify most common surface-mounted transistors and diodes. Note that the same	OCR Scan	OT-23, OT-89 OT-143 BZV49 OT-23 2SC2059K sot-23 MARKING CODE ZA b0808 BCB47B BCB17-16 marking za sot89 2SB0151K marking k5 sot89 SOT 86 MARKING E4 n33 SOT-23 10Y sot-23	PDF
rkm 33 transistor Abstract: bkd transistor DTD133HKA BKD C6 DTB133HKA Transistor BJD 2SA1885 rkm 20 transistor 2SC5274 rkm transistor Text: Transistors Abbreviated label symbols on mini molded type Abbreviated label symbols on mini molded type •E M T 3 and UMT3 labels On general transistors, the product and hpE rank are in dicated by 2 or 3 letters. On digital transistors, the product type is indicated by a 2-digit number.	OCR Scan	FMA10A FMA11A IMB10A IMB11A IMB16 IMB17A IMD10A IMD14 IMD16A IMH10A rkm 33 transistor bkd transistor DTD133HKA BKD C6 DTB133HKA Transistor BJD 2SA1885 rkm 20 transistor 2SC5274 rkm transistor	PDF
Untitled Abstract: No abstract text available Text: MITSUBISHI TRAN SISTOR M O D U LES ! HIGH POWER SWITCHING U SE INSULATED TYPE f QM75DY-HB I j QNI750Y-HB • Ic • Vcex Collector current.75A Collector-emitter voltage. 600V • hFE DC current gain. 750	OCR Scan	QM75DY-HB QNI750Y-HB E80276 E80271 QM75DY-HB 15QmAIS	PDF
Untitled Abstract: No abstract text available Text: Transistors Digital transistors built-in resistors DTD123YK / DTD123YS •F e a tu re s •E x te rn a l dimensions (Units: mm) 1 ) Built-in bias resistors en ab le the configuration of an inverter circuit 2.9±0.2 DTD123YK + 1 1 0.2 ; -0.1 1.9+0.2 without connecting external input	OCR Scan	DTD123YK DTD123YS DTD123YK SC-59 0Dlb713 O-220FN O-220FN O220FP T0-220FP, O-220FP.	PDF

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F62 TRANSISTOR Search Results

F62 TRANSISTOR Result Highlights (5)

F62 TRANSISTOR Datasheets Context Search

transistor irf620

f62 current transistor

LDTD123YLT1G

marking F62

SC-59

k2647

DTD123Y

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T146

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rkm 33 transistor

113 marking code transistor ROHM

transistors marking ND

marking F62

K 4005 transistor

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sot-23 MARKING CODE ZA

rkm 33 transistor

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