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    FAIRCHILD FQD DPAK Search Results

    FAIRCHILD FQD DPAK Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK6R9P08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 62 A, 0.0069 Ohm@10V, DPAK Visit Toshiba Electronic Devices & Storage Corporation
    TK5R1P08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 84 A, 0.0051 Ohm@10V, DPAK Visit Toshiba Electronic Devices & Storage Corporation
    54ABT245/BRA Rochester Electronics LLC Replacement for Fairchild part number 5962-9214801QRA. Buy from authorized manufacturer Rochester Electronics. Visit Rochester Electronics LLC Buy
    74F403SPC Rochester Electronics LLC Replacement for Fairchild part number 74F403SPC. Buy from authorized manufacturer Rochester Electronics. Visit Rochester Electronics LLC Buy
    54F38/QCA Rochester Electronics LLC Replacement for Fairchild part number 54F38/BCA. Buy from authorized manufacturer Rochester Electronics. Visit Rochester Electronics LLC Buy

    FAIRCHILD FQD DPAK Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    11p06

    Abstract: FQU11P06
    Text: FQD11P06 / FQU11P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQD11P06 FQU11P06 FQD11P06TF FQD11P06TM SB82077 11p06 FQU11P06

    5n50c

    Abstract: FQD5N50CTM FAIRCHILD FQD DPAK
    Text: TM FQD5N50C / FQU5N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQD5N50C FQU5N50C O-252 FQD5N50CTF FQD5N50CTM 5n50c FAIRCHILD FQD DPAK

    6N40C

    Abstract: FAIRCHILD FQD DPAK 305 marking code d-pak
    Text: TM FQD6N40C / FQU6N40C 400V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQD6N40C FQU6N40C O-252 FQD6N40CTF FQD6N40CTM 6N40C FAIRCHILD FQD DPAK 305 marking code d-pak

    10n20c

    Abstract: 10n20
    Text: FQD10N20C / FQU10N20C 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQD10N20C FQU10N20C swi000 FQD10N20CTF FQD10N20CTM 10n20c 10n20

    1N60C

    Abstract: FAIRCHILD FQD DPAK DPAK-2 PACKAGE PSPICE Orcad 1n60 FQD1N60CTM
    Text: FQD1N60C / FQU1N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQD1N60C FQU1N60C O-252 FQD1N60CTF FQD1N60CTM 1N60C FAIRCHILD FQD DPAK DPAK-2 PACKAGE PSPICE Orcad 1n60

    5n60c

    Abstract: No abstract text available
    Text: TM FQD5N60C / FQU5N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQD5N60C FQU5N60C FQD5N60CTF FQD5N60CTM 5n60c

    6n50c

    Abstract: 6n50 FAIRCHILD FQD DPAK
    Text: FQD6N50C / FQU6N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQD6N50C FQU6N50C FQD6N50CTF FQD6N50CTM 6n50c 6n50 FAIRCHILD FQD DPAK

    Untitled

    Abstract: No abstract text available
    Text: 250V N-Channel MOSFET Features Description • • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQD16N25C FQD16N25C

    Untitled

    Abstract: No abstract text available
    Text: QFET FQD3N50C / FQU3N50C 500V N-Channel MOSFET Features Description • • • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQD3N50C FQU3N50C FQU3N50C

    Untitled

    Abstract: No abstract text available
    Text: QFET FQD3N60C / FQU3N60C 600V N-Channel MOSFET Features Description • 2.4A, 600V, RDS on = 3.4 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FQD3N60C FQU3N60C FQU3N60C

    10A600VRDS

    Abstract: No abstract text available
    Text: FQD1N60 / FQU1N60 April 2000 QFET TM FQD1N60 / FQU1N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQD1N60 FQU1N60 10A600VRDS

    Untitled

    Abstract: No abstract text available
    Text: FQD1N60C / FQU1N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQD1N60C FQU1N60C

    FQD12P10

    Abstract: FQU12P10
    Text: FQD12P10 / FQU12P10 August 2000 QFET TM FQD12P10 / FQU12P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQD12P10 FQU12P10 -100V, FQU12P10

    FQD2P25

    Abstract: FQU2P25
    Text: FQD2P25 / FQU2P25 April 2000 QFET TM FQD2P25 / FQU2P25 250V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQD2P25 FQU2P25 -250V, FQU2P25

    FQD2N60

    Abstract: FQU2N60
    Text: FQD2N60 / FQU2N60 April 2000 QFET TM FQD2N60 / FQU2N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQD2N60 FQU2N60 FQU2N60

    FQU1N60

    Abstract: FQD1N60
    Text: FQD1N60 / FQU1N60 April 2000 QFET TM FQD1N60 / FQU1N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQD1N60 FQU1N60 FQU1N60

    FQD1P50

    Abstract: FQU1P50
    Text: QFET TM FQD1P50 / FQU1P50 500V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize


    Original     		PDF FQD1P50 FQU1P50 -500V, FQU1P50

    FQD3N60

    Abstract: FQU3N60
    Text: FQD3N60 / FQU3N60 April 2000 QFET TM FQD3N60 / FQU3N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQD3N60 FQU3N60 FQU3N60

    FQD3P20

    Abstract: FQU3P20
    Text: FQD3P20 / FQU3P20 April 2000 QFET TM FQD3P20 / FQU3P20 200V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQD3P20 FQU3P20 -200V, FQU3P20

    FQD2P40

    Abstract: FQU2P40
    Text: QFET TM FQD2P40 / FQU2P40 400V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize


    Original     		PDF FQD2P40 FQU2P40 -400V, FQU2P40

    FQU5N60C

    Abstract: No abstract text available
    Text: FQD5N60C / FQU5N60C N-Channel QFET MOSFET 600 V, 2.8 A, 2.5 Ω Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor ’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce


    Original     		PDF FQD5N60C FQU5N60C FQU5N60C

    FQU5N60C

    Abstract: No abstract text available
    Text: FQD5N60C / FQU5N60C N-Channel QFET MOSFET 600 V, 2.8 A, 2.5 Ω Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor ’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce


    Original     		PDF FQD5N60C FQU5N60C FQU5N60C

    Untitled

    Abstract: No abstract text available
    Text: FQD13N10L / FQU13N10L August 2000 QFET TM FQD13N10L / FQU13N10L 100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FQD13N10L FQU13N10L

    FQD12P10

    Abstract: FQU12P10
    Text: TM FQD12P10 / FQU12P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQD12P10 FQU12P10 -100V, FQU12P10