Untitled
Abstract: No abstract text available
Text: LL4148 Small Signal Diode Cathode Band COLOR BAND MARKING 1ST BAND Black SOD80 The 1st Band indicates the cathode band the 1st Band indicates the cathod Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity Color Band Marking
|
Original
|
PDF
|
LL4148
|
Untitled
Abstract: No abstract text available
Text: Advance Information FDME910PZT P-Channel PowerTrench MOSFET -20 V, -8 A, 24 mΩ Features General Description Max rDS on = 24 mΩ at VGS = -4.5 V, ID = -8 A This device is designed specifically for battery charging or load switching in cellular handset and other ultraportable applications.
|
Original
|
PDF
|
FDME910PZT
FDME910PZT
|
Untitled
Abstract: No abstract text available
Text: FJD5553 NPN Silicon Transistor Features • Fast Speed Switching • Wide Safe Operating Area • High Voltage Capability C 2 E 3 1 B Application DPAK Marking : J5553 1 • Electronic Ballast • Switch Mode Power Supplies 1. Base 2. Collector 3. Emitter Ordering Information
|
Original
|
PDF
|
FJD5553
J5553
FJD5553TM
|
Untitled
Abstract: No abstract text available
Text: FJX3904 NPN Epitaxial Silicon Transistor Feature 3 • General-Purpose Transistor 2 1 SC-70 1. Base 2. Emitter 3. Collector Package Marking and Ordering Information Device Item Device Marking Package Packing Method Qty pcs FJX3904TF S1A SC-70 TAPE & REEL
|
Original
|
PDF
|
FJX3904
SC-70
FJX3904TF
|
Untitled
Abstract: No abstract text available
Text: FJD5555 NPN Silicon Transistor Features • Fast Speed Switching • Wide Safe Operating Area • High Voltage Capability C 2 E 3 1 B Application 1 • Electronic Ballast • Switch Mode Power Supplies Marking : J5555 1. Base 2. Collector 3. Emitter Ordering Information
|
Original
|
PDF
|
FJD5555
J5555
FJD5555TM
|
Untitled
Abstract: No abstract text available
Text: FLZ2V2 - FLZ39V Zener Diodes Cathode Band Color Band Marking Tolerance A B C D SOD80 1st Band Black Black Black Black Ordering Information Device Marking Device Color Band Marking Refer to Per Tolerance Product table list Package Reel Size Tape Width Quantity
|
Original
|
PDF
|
FLZ39V
OD-80
|
marking 03s
Abstract: No abstract text available
Text: Advance Information FDN7603S N-Channel PowerTrench SyncFETTM 30 V, 4.8 A, 43 m: Features General Description Max rDS on = 43 m: at VGS = 10 V, ID = 4.8 A The FDN7603S has been designed to minimize losses in power conversion application. Advancements in both silicon and
|
Original
|
PDF
|
FDN7603S
FDN7603S
marking 03s
|
Untitled
Abstract: No abstract text available
Text: Advance Information FDN7603S N-Channel PowerTrench SyncFETTM 30 V, 4.8 A, 43 m: Features General Description The FDN7603S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest
|
Original
|
PDF
|
FDN7603S
FDN7603S
|
Untitled
Abstract: No abstract text available
Text: BCP53 PNP General-Purpose Amplifier Description 4 This device is designed for general-purpose mediumpower amplifiers and switching circuits for collector currents to 1.0 A. Sourced from process 79. 3 2 1 SOT-223 1. Base 2,4. Collector 3. Emitter Ordering Information
|
Original
|
PDF
|
BCP53
OT-223
OT-223
|
12SnOFC
Abstract: BQ37 PMC-90 PMC-90 leadframe material MKT-TO220B03 FDP3672 HRF3205 equivalent mosfet number Tamac4 a105 transistor HRF3205 equivalent
Text: Date Created: 1/9/2004 Date Issued: 2/13/2004 PCN # 20040204 FORECAST CHANGE NOTIFICATION This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence. This is a preliminary notification. A final PCN will
|
Original
|
PDF
|
HUF75343P3
HUF75542P3
HUF75631P3
HUF75645P3
HUF75939P3
HUF76107P3
HUF76132P3
HUF76143P3
HUF76419P3
HUF76432P3
12SnOFC
BQ37
PMC-90
PMC-90 leadframe material
MKT-TO220B03
FDP3672
HRF3205 equivalent mosfet number
Tamac4
a105 transistor
HRF3205 equivalent
|
FZT749
Abstract: No abstract text available
Text: FZT749 PNP Low Saturation Transistor Description 4 These devices are designed with high-current gain and low saturation voltage with collector currents up to 3 A continuous. 3 2 1 SOT-223 1. Base 2,4. Collector 3. Emitter Ordering Information Part Number Marking
|
Original
|
PDF
|
FZT749
OT-223
OT-223
FZT749
|
MB10S
Abstract: No abstract text available
Text: MB10S 0.5 A Bridge Rectifiers Features • Low-Leakage + • Surge Overload Rating: 35 A Peak - • Ideal for Printed Circuit Board • UL Certified: UL #E111753 and E326243 SOIC-4 Polarity symbols molded or mark on body Ordering Information Part Number Marking
|
Original
|
PDF
|
MB10S
E111753
E326243
MB10S
|
Untitled
Abstract: No abstract text available
Text: MB1S - MB8S 0.5 A Bridge Rectifiers + Features - • Low-Leakage • Surge Overload Rating: 35 A peak • Ideal for Printed Circuit Board SOIC-4 • UL Certified: UL #E111753 and E326243 Polarity symbols molded or mark on body Ordering Informations Part Number
|
Original
|
PDF
|
E111753
E326243
|
Untitled
Abstract: No abstract text available
Text: MMBTA55 PNP General-Purpose Amplifier Description C This device is designed for general-purpose amplifier applications at collector currents to 300 mA. Sourced from process 73. E SOT-23 Mark: 2H B Ordering Information Part Number Marking Package Packing Method
|
Original
|
PDF
|
MMBTA55
OT-23
OT-23
|
|
|
Untitled
Abstract: No abstract text available
Text: BAT54HT1G Schottky Barrier Diodes Connection Diagram 1 1 A2 2 SOD-323 2 Ordering Information Part Number Marking Package Packing Method BAT54HT1G A2 SOD-323 2L Tape and Reel Absolute Maximum Ratings 1 Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
|
Original
|
PDF
|
BAT54HT1G
OD-323
OD-323
|
Untitled
Abstract: No abstract text available
Text: BCX17 PNP General-Purpose Amplifier Description 3 This device is designed for general-purpose amplifiers and switching applications at currents to 0.5 A. Sourced from process 78. 2 1 SOT-23 Mark: T1 1. Base 2. Emitter 3. Collector Ordering Information Part Number
|
Original
|
PDF
|
BCX17
OT-23
OT-23
|
Untitled
Abstract: No abstract text available
Text: FSB660A PNP Low Saturation Transistor Description C These devices are designed with high-current gain and low saturation voltage with collector currents up to 2 A continuous. E B SuperSOT -3 SOT-23 Ordering Information Part Number Marking Package Packing Method
|
Original
|
PDF
|
FSB660A
OT-23)
|
Untitled
Abstract: No abstract text available
Text: RS1A - RS1M Fast Rectifiers Features • Glass-Passivated Junction • For Surface Mounted Applications • Built-in Strain Relief, Ideal for Automated Placement SMA/DO-214AC • UL Certified: Certificate # E326243 COLOR BAND DENOTES CATHODE Ordering Information
|
Original
|
PDF
|
SMA/DO-214AC
E326243
DO-214AC
|
BD135
Abstract: No abstract text available
Text: BD135 / 137 / 139 NPN Epitaxial Silicon Transistor Features • Complement to BD136, BD138 and BD140 respectively Applications • Medium Power Linear and Switching 1 1. Emitter TO-126 2.Collector 3.Base Ordering Information Part Number Marking BD13516S BD1356STU
|
Original
|
PDF
|
BD135
BD136,
BD138
BD140
O-126
BD13516S
BD1356STU
BD13510STU
BD13516STU
BD13716STU
|
Untitled
Abstract: No abstract text available
Text: BU406 / 406H / 408 NPN Epitaxial Silicon Transistor Features • High-Voltage Switching • Use In Horizontal Deflection Output Stage 1 1.Base TO-220 2.Collector 3.Emitter Ordering Information Part Number Marking Package Packing Method BU406 BU406 TO-220 3L
|
Original
|
PDF
|
BU406
O-220
BU406
O-220
BU406TU
|
Untitled
Abstract: No abstract text available
Text: RS1A - RS1M Fast Rectifiers Features • Glass-Passivated Junction • For Surface Mounted Applications • Built-in Strain Relief, Ideal for Automated Placement SMA/DO-214AC • UL Certified: Certificate # E326243 COLOR BAND DENOTES CATHODE Ordering Information
|
Original
|
PDF
|
SMA/DO-214AC
E326243
DO-214AC
|
Untitled
Abstract: No abstract text available
Text: KSA1015 PNP Epitaxial Silicon Transistor Features • Low-Frequency Amplifier • Collector-Base Voltage: VCBO = -50 V • Complement to KSC1815 1 TO-92 1. Emitter 2. Collector 3. Base Ordering Information Part Number Marking Package Packing Method KSA1015GRTA
|
Original
|
PDF
|
KSA1015
KSC1815
KSA1015GRTA
A1015
KSA1015YTA
|
Untitled
Abstract: No abstract text available
Text: KST42 / KST43 NPN Epitaxial Silicon Transistor Features • High-Voltage Transistor 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector Ordering Information Part Number Marking Package Packing Method KST42MTF 1D SOT-23 3L Tape and Reel KST43MTF 1E SOT-23 3L Tape and Reel
|
Original
|
PDF
|
KST42
KST43
OT-23
KST42MTF
OT-23
KST43MTF
|
Untitled
Abstract: No abstract text available
Text: BD433/435/437 NPN Epitaxial Silicon Transistor Features • Medium Power Linear and Switching Applications • Complement to BD434, BD436 and BD438 respectively TO-126 1 1. Emitter 2.Collector 3.Base Ordering Information Part Number Marking Package Packing Method
|
Original
|
PDF
|
BD433/435/437
BD434,
BD436
BD438
O-126
BD433S
BD433
BD435S
BD435
|
