TLC 1050
Abstract: FAA064 spansion Packing and Packaging Handbook DATE CODE Transistor Bo 17 Datasheet spansion Packing and Packaging Handbook WNF008
Text: Chapter 6 Tape and Reel CHAPTER 6 TAPE AND REEL Introduction Design and Materials Device Count per Reel Reel Dimensions and Labels Tape Dimensions Packages and Packing Methodologies Handbook 17 Oct 2008 6-1 Chapter 6 Tape and Reel INTRODUCTION A tape-and-reel packing container is available for shipment of the following Spansion products: single-chip FBGA packages
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56-Lead
25917b
TLC 1050
FAA064
spansion Packing and Packaging Handbook DATE CODE
Transistor Bo 17 Datasheet
spansion Packing and Packaging Handbook
WNF008
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Untitled
Abstract: No abstract text available
Text: S72WS-R based MCP Products 1.8 Volt-only x16 Flash Memory and SDRAM on Split Bus Simultaneous Read/Write, Burst Mode MirrorBit NOR Flash on Bus 1 Mobile SDRAM on Bus 2 S72WS-R based MCP Products Cover Sheet Data Sheet Advance Information Notice to Readers: This document states the current technical specifications regarding the Spansion
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S72WS-R
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MT41K512M8
Abstract: sac305 A1A4M DDR3L MT41K256M8 MT41K1G4
Text: Preliminary‡ 4Gb: x4, x8 1.35V TwinDie DDR3L SDRAM Features TwinDie DDR3L SDRAM MT41K1G4 – 64 Meg x 4 x 8 Banks x 2 Ranks MT41K512M8 – 32 Meg x 8 x 8 Banks x 2 Ranks Features Options • Configuration – 64 Meg x 4 x 8 banks x 2 ranks – 32 Meg x 8 x 8 banks x 2 ranks
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MT41K1G4
MT41K512M8
09005aef8460911b
MT41K512M8
sac305
A1A4M
DDR3L
MT41K256M8
MT41K1G4
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CV-8710
Abstract: EME-G770HCD Sumitomo EME-G600 material SUMITOMO EME G770 EME-G760 MGC CCL-HL832 EME-G600 CCL-HL832 sumitomo g770 Ablestik ablebond 3230 epoxy
Text: Chapter 3 Package Materials CHAPTER 3 PACKAGE MATERIALS Introduction JIG-101 Ed 3.0 Declarable Substance List Reporting of 38 Substances of Very High Concern EU REACH Material Declaration Sheets Packages and Packing Methodologies Handbook 6 Jul 2010
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JIG-101
CV-8710
EME-G770HCD
Sumitomo EME-G600 material
SUMITOMO EME G770
EME-G760
MGC CCL-HL832
EME-G600
CCL-HL832
sumitomo g770
Ablestik ablebond 3230 epoxy
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Untitled
Abstract: No abstract text available
Text: 2Gb: x4, x8 TwinDie DDR2 SDRAM Functionality TwinDie DDR2 SDRAM MT47H512M4 – 32 Meg x 4 x 8 Banks x 2 Ranks MT47H256M8 – 16 Meg x 8 x 8 Banks x 2 Ranks For the latest component data sheet, refer to Micron’s Web site: www.micron.com Functionality Options
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MT47H512M4
MT47H256M8
63-Ball
MT47H
MT47H512M4
09005aef8266acfe/Source:
09005aef8266ac6e
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MT41J512M8
Abstract: "2Gb DDR3 SDRAM" MT41J256M8 MT41J1G4 srt 8n 2Gb DDR3 SDRAM twindie MT41J512 DDR3-1066 DDR3-1333 MT41J512M4
Text: 4Gb: x4, x8 TwinDie DDR3 SDRAM Functionality TwinDieTM DDR3 SDRAM MT41J1G4 – 64 Meg x 4 x 8 Banks x 2 Ranks MT41J512M8 – 32 Meg x 8 x 8 Banks x 2 Ranks For component data sheets, refer to Micron’s Web site: www.micron.com Functionality Options The 4Gb TwinDie DDR3 SDRAM uses Micron’s 2Gb
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MT41J1G4
MT41J512M8
MT41J512M4
MT41J1G4;
MT41J256M8
correla-3900
09005aef83188bab/Source:
09005aef83169de6
MT41J1G4
MT41J512M8
"2Gb DDR3 SDRAM"
srt 8n
2Gb DDR3 SDRAM twindie
MT41J512
DDR3-1066
DDR3-1333
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63-ball
Abstract: DDR2 SDRAM Meg x 16 x 16 banks marking micron ddr2 marking WMM MICRON 63 TN-00-08 DDR2-533 DDR2-667 DDR2-800 MT47H256M8
Text: 2Gb: x4, x8 TwinDie DDR2 SDRAM Functionality TwinDie DDR2 SDRAM MT47H512M4 – 32 Meg x 4 x 8 Banks x 2 Ranks MT47H256M8 – 16 Meg x 8 x 8 Banks x 2 Ranks For the latest component data sheet, refer to Micron’s Web site: www.micron.com Functionality Options
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MT47H512M4
MT47H256M8
09005aef8266acfe/Source:
09005aef8266ac6e
MT47H512M4
63-ball
DDR2 SDRAM Meg x 16 x 16 banks
marking micron ddr2
marking WMM
MICRON 63
TN-00-08
DDR2-533
DDR2-667
DDR2-800
MT47H256M8
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bd248
Abstract: UBGA169 EP1800 324 bga thermal HC1S6 EP2S15 EP2S180 EP2S30 EP2S60 EP2S90
Text: Altera Device Package Information May 2005, vers.13.0 Introduction Data Sheet This data sheet provides package information for Altera devices. It includes these sections: • ■ ■ Device & Package Cross Reference below Thermal Resistance (starting on page 14)
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MT41J256M8
Abstract: 2Gb DDR3 SDRAM twindie MT41J512M4 srt 8n MT41J256m8 fbga MT41J256M4 "DDR3 SDRAM" DDR3-1066 DDR3-1333 MT41J128M8
Text: 2Gb: x4, x8 TwinDie DDR3 SDRAM Functionality TwinDieTM DDR3 SDRAM MT41J512M4 – 32 Meg x 4 x 8 Banks x 2 Ranks MT41J256M8 – 16 Meg x 8 x 8 Banks x 2 Ranks For component data sheets, refer to Micron’s Web site: www.micron.com Functionality Options The 2Gb TwinDie DDR3 SDRAM uses Micron’s 1Gb
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MT41J512M4
MT41J256M8
MT41J256M4
MT41J512M4;
MT41J128M8
m3900
09005aef82fcca5a/Source:
09005aef82ed0bfa
MT41J512M4
MT41J256M8
2Gb DDR3 SDRAM twindie
srt 8n
MT41J256m8 fbga
"DDR3 SDRAM"
DDR3-1066
DDR3-1333
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ep600i
Abstract: processor cross reference MS-034 1152 BGA Cross Reference epm7064 cross reference EP2S15 EP2S180 EP2S30 EP2S60 EP2S90
Text: Altera Device Package Information October 2005, vers.14.2 Introduction Data Sheet This data sheet provides package information for Altera devices. It includes these sections: • ■ ■ Device & Package Cross Reference below Thermal Resistance (starting on page 16)
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schematic diagram online UPS for high frequency
Abstract: ag19
Text: v3.3 ProASICPLUS TM Flash Family FPGAs Features and Benefits • • High Capacity I/O • • • • • 75,000 to 1 million System Gates 27k to 198kbits of Two-Port SRAM 66 to 712 User I/Os Reprogrammable Flash Technology • • • • 0.22µ 4LM Flash-based CMOS Process
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APA750
Abstract: GL25 4kx8 sram
Text: v3 .4 PLUS ProASIC TM Flash Family FPGAs Features and Benefits • • High Capacity I/O • • • • • 75,000 to 1 million System Gates 27k to 198kbits of Two-Port SRAM 66 to 712 User I/Os Reprogrammable Flash Technology • • • • 0.22µ 4LM Flash-based CMOS Process
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OB33LN
Abstract: ProASICPLUS Flash Family FPGAs v3.3
Text: v3.3 ProASICPLUS TM Flash Family FPGAs Features and Benefits • • High Capacity I/O • • • • • 75,000 to 1 million System Gates 27k to 198kbits of Two-Port SRAM 66 to 712 User I/Os Reprogrammable Flash Technology • • • • 0.22µ 4LM Flash-based CMOS Process
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APA075,
APA150,
APA300
OB33LN
ProASICPLUS Flash Family FPGAs v3.3
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Socket IC 80 pin LQFP
Abstract: V850E 150 MHz D70F3107 D70F3 4 pin surface mount crystal oscillator CD 5888 LQFP 128 pin Socket NEC lqfp 52 pogo pins V850E/MA1
Text: User’s Manual IE-703107-MC-EM1 In-Circuit Emulator Option Board Target Devices V850E/MA1 V850E/MA2 Document No. Date Published Printed in Japan U14481EJ3V0UM00 3rd edition August 2004 NS CP(K) [MEMO] 2 User’s Manual U14481EJ3V0UM Windows is either a registered trademark or a trademark of Microsoft Corporation in the United States
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IE-703107-MC-EM1
V850E/MA1
V850E/MA2
U14481EJ3V0UM00
U14481EJ3V0UM
Socket IC 80 pin LQFP
V850E 150 MHz
D70F3107
D70F3
4 pin surface mount crystal oscillator
CD 5888
LQFP 128 pin Socket
NEC lqfp 52
pogo pins
V850E/MA1
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PQFP 176
Abstract: 240 pin rqfp drawing EP3C5E144 EP1K50-208 processor cross reference EP3C16F484 MS-034 1152 BGA 84 FBGA thermal TQFP 144 PACKAGE DIMENSION FBGA 1760
Text: Altera Device Package Information May 2007 version 14.7 Document Revision History Data Sheet Table 1 shows the revision history for this document. Table 1. Document Revision History 1 Date and Document Version May 2007 v14.7 Changes Made ● ● ● ●
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144-Pin
100-Pin
256-Pin
780-Pin
256-Pin
68-Pin
PQFP 176
240 pin rqfp drawing
EP3C5E144
EP1K50-208
processor cross reference
EP3C16F484
MS-034 1152 BGA
84 FBGA thermal
TQFP 144 PACKAGE DIMENSION
FBGA 1760
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LQFP 128 pin Socket
Abstract: IE-703107-MC-EM1 IE-V850E-MC IE-V850E-MC-A D70F3107
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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U14481EJ3V0UM
LQFP 128 pin Socket
IE-703107-MC-EM1
IE-V850E-MC
IE-V850E-MC-A
D70F3107
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EP4CE15
Abstract: MS 034 BGA and QFP Altera Package mounting Altera pdip top mark jedec package MO-247 SOIC 20 pin package datasheet QFN "100 pin" PACKAGE thermal resistance Theta JC of FBGA QFN148 EP4CE22
Text: Altera Device Package Information Datasheet DS-PKG-16.2 This datasheet provides package and thermal resistance information for Altera devices. Package information includes the ordering code reference, package acronym, leadframe material, lead finish plating , JEDEC outline reference, lead
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DS-PKG-16
EP4CE15
MS 034
BGA and QFP Altera Package mounting
Altera pdip top mark
jedec package MO-247
SOIC 20 pin package datasheet
QFN "100 pin" PACKAGE thermal resistance
Theta JC of FBGA
QFN148
EP4CE22
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EP4CE6 package
Abstract: EP4CE40 Altera EP4CE6 EP4CE55 5M240Z 5M1270Z QFN148 5m570z 5M40 5M80
Text: Package Information Datasheet for Altera Devices DS-PKG-16.3 This datasheet provides package and thermal resistance information for Altera devices. Package information includes the ordering code reference, package acronym, leadframe material, lead finish plating , JEDEC outline reference, lead
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DS-PKG-16
EP4CE6 package
EP4CE40
Altera EP4CE6
EP4CE55
5M240Z
5M1270Z
QFN148
5m570z
5M40
5M80
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M1012
Abstract: No abstract text available
Text: 4Gb: x16, x32 Mobile LPDDR2 SDRAM S4 Features Mobile LPDDR2 SDRAM MT42L256M16D1, MT42L128M32D1, MT42L256M32D2, MT42L128M64D2, MT42L512M32D4, MT42L192M64D3, MT42L256M64D4 Features Options • VDD2: 1.2V • Configuration – 32 Meg x 16 x 8 banks x 1 die – 16 Meg x 32 x 8 banks x 1 die
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MT42L256M16D1,
MT42L128M32D1,
MT42L256M32D2,
MT42L128M64D2,
MT42L512M32D4,
MT42L192M64D3,
MT42L256M64D4
134-ball
168-ball
216-ball
M1012
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MT42L256M32D2
Abstract: MT42L128M32D1 lpddr2 DQ calibration MT42L256M16D1 LPDDR2 SDRAM MT42L128M64D2 MT42L256M64D4 mt42L256m16 LPDDR2 SDRAM micron LPDDR2
Text: 4Gb: x16, x32 Mobile LPDDR2 SDRAM S4 Features Mobile LPDDR2 SDRAM MT42L256M16D1, MT42L128M32D1, MT42L256M32D2, MT42L128M64D2, MT42L512M32D4, MT42L192M64D3, MT42L256M64D4 Features Options • VDD2: 1.2V • Configuration – 32 Meg x 16 x 8 banks x 1 die – 16 Meg x 32 x 8 banks x 1 die
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MT42L256M16D1,
MT42L128M32D1,
MT42L256M32D2,
MT42L128M64D2,
MT42L512M32D4,
MT42L192M64D3,
MT42L256M64D4
09005aef84427aab
MT42L256M32D2
MT42L128M32D1
lpddr2 DQ calibration
MT42L256M16D1
LPDDR2 SDRAM
MT42L128M64D2
mt42L256m16
LPDDR2 SDRAM micron
LPDDR2
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N12030
Abstract: 2SC144 U12688E c5cs IE-703102-MC IE-703102-MC-EM1 IE-703102-MC-EM1-A U12197E U13875J V850E 150 MHz
Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社
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IE-703102-MC-EM1,
IE-703102-MC-EM1-A
V850E/MS1
V850E/MS2
U13876JJ2V0UM00
U13876JJ2V0UM
157FBGA
IE-703102-MCIE-703102-MC-EM1
IE-703102-MC-EM1
N12030
2SC144
U12688E
c5cs
IE-703102-MC
IE-703102-MC-EM1
IE-703102-MC-EM1-A
U12197E
U13875J
V850E 150 MHz
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D70F3107
Abstract: ua80 K1254 PD703107 CA850 IE-703107-MC-EM1 IE-V850E-MC IE-V850E-MC-A PD70F3107 703107
Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社
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IE-703107-MC-EM1
V850E/MA1
V850E/MA2
U14481JJ3V0UM003
U14481JJ3V0UM
D70F3107
ua80
K1254
PD703107
CA850
IE-703107-MC-EM1
IE-V850E-MC
IE-V850E-MC-A
PD70F3107
703107
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PDF
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LGA 1156 PIN OUT diagram
Abstract: QFP11T144-002 LGA 1156 Socket diagram 216-LQFP Wells-CTI 36 lead Flat Pack smd AAAS Wells-CTI LCC socket Wells-CTI 880 020 BGA136 Enplas drawings
Text: Preface Thank you for your continuing loyalty to Fujitsu's semiconductor products. Electronic equipment is continually becoming smaller, lighter, and less expensive while also growing more advanced in terms of function and performance. As a result, applications for semiconductor devices such as IC and
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K4T2G044QQ
Abstract: M392T5160QJA K4T1G044QQ
Text: VLP RDIMM DDR2 SDRAM DDR2 VLP Registered SDRAM MODULE 240pin VLP Registered Module based on 1Gb Q-die 72-bit ECC 60FBGA / 63FBGA / 65FBGA with Lead-free and Halogen-free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,
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240pin
72-bit
60FBGA
63FBGA
65FBGA
K4T2G044QQ
M392T5160QJA
K4T1G044QQ
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