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    FBGA PACKAGE 14X18 Search Results

    FBGA PACKAGE 14X18 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPH9R00CQH Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH2R408QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance Visit Toshiba Electronic Devices & Storage Corporation
    XPH2R106NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 110 A, 0.0021 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    XPH3R206NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 70 A, 0.0032 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    TPH4R008QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 86 A, 0.004 Ohm@10V, SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation

    FBGA PACKAGE 14X18 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    1f1-1717-a19

    Abstract: 153FBGA BGA 6x6 tray FBGA tray kostat tray bga 6x6 169fbga-12.0x16.0-8x16-0 78BOC-11 78BOC ePAK BGA 5x5 tray 153FBGA-9
    Text: Jul. 2010 Packing Tray Material Line-up Quantity Bake Temp. 8.1*15.1 8*12 ,256M DDR 5G 60WMBG Package 8*12 130℃ MAX 60M/54WBGA-8.10X15.10-8X12-A TR_MARKING LA69-00635A Material Code Material Spec 48TBGA,10.0*9.0(8*16) 8*16 130℃ MAX 48-TBGA-10.0X9.0-8X16-O


    Original     		60WMBG 60M/54WBGA-8 10X15 10-8X12-A LA69-00635A 48TBGA 48-TBGA-10 0-8X16-O LA69-00267A ADS11981 1f1-1717-a19 153FBGA BGA 6x6 tray FBGA tray kostat tray bga 6x6 169fbga-12.0x16.0-8x16-0 78BOC-11 78BOC ePAK BGA 5x5 tray 153FBGA-9 PDF

    fcBGA PACKAGE thermal resistance

    Abstract: 409-ball CERAMIC PIN GRID ARRAY wire lead frame lead frame pin grid array 30-PIN TSOP 48 stacked flash bonding TSOP 48 thermal resistance Sharp Packages SSOP MM1248 ebga 304
    Text: IC PACKAGE FUJITSU MICROELECTRONICS LIMITED Shinjuku Dai-Ichi Seimei Bldg. 7-1, Nishishinjuku 2-chome, Shinjuku-ku, Tokyo 163-0722, Japan Tel: +81-3-5322-3347 Fax: +81-3-5322-3387 http://jp.fujitsu.com/fml/en/ For further information please contact: North and South America


    Original     		PDF

    32Gb Nand flash toshiba

    Abstract: toshiba emmc toshiba 16GB Nand flash emmc toshiba eSD memory toshiba THGBM1G4D1EBAI7 THGBM1G thgbm emmc Sequential Interleave Mode of 32Gb Nand flash memory by toshiba emmc 4.3 standard jedec
    Text: New s/Media Resources | Photo Gallery TOSHIBA LAUNCHES LARGEST DENSITY EMBEDDED NAND FLASH MEMORY DEVICES eMMC and eSD Embedded Memories Combine Up To 32GB NAND and Controller in a Single Package IRVINE, Calif., and TOKYO, August 7, 2008 — Toshiba Corp. Toshiba and Toshiba America Electronic


    Original     		32GB1 32Gb Nand flash toshiba toshiba emmc toshiba 16GB Nand flash emmc toshiba eSD memory toshiba THGBM1G4D1EBAI7 THGBM1G thgbm emmc Sequential Interleave Mode of 32Gb Nand flash memory by toshiba emmc 4.3 standard jedec PDF

    K9HDG08U1A

    Abstract: K9LCG08U0A k4g10325fe-hc04 KLM2G1DEHE-B101 K9WAG08U1B-PIB0 k9gag08u0e Ltn140at SAMSUNG HD502HJ hd204ui klm2g1dehe
    Text: Product Selection Guide LCD, Memory and Storage - 1H 2011 Samsung Semiconductor, Inc Samsung continues to lead the industry with the broadest portfolio of memory products and technology. Its DRAM, flash, SRAM products are found in computers—from ultra-mobile notebooks


    Original     		BR-11-ALL-001 K9HDG08U1A K9LCG08U0A k4g10325fe-hc04 KLM2G1DEHE-B101 K9WAG08U1B-PIB0 k9gag08u0e Ltn140at SAMSUNG HD502HJ hd204ui klm2g1dehe PDF