FCSI0901M200 Search Results

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FLM1314-12F Abstract: No abstract text available Text: FLM1314-12F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 41.0dBm Typ. High Gain: G1dB = 6.0dB (Typ.) High PAE: ηadd = 23% (Typ.) Low IM3 = -45dBc@Po = 29.0dBm Broad Band: 13.75 ~ 14.5GHz Impedance Matched Zin/Zout = 50Ω	Original	PDF	FLM1314-12F -45dBc FLM1314-12F 17serve FCSI0901M200
FLM5972-12F Abstract: FET 4016 Text: FLM5972-12F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 41.5dBm Typ. High Gain: G1dB = 9.5dB (Typ.) High PAE: ηadd = 37% (Typ.) Low IM3 = -45dBc@Po = 30.5dBm Broad Band: 5.9 ~ 7.2GHz Impedance Matched Zin/Zout = 50Ω	Original	PDF	FLM5972-12F -45dBc FLM5972-12F FCSI0901M200 FET 4016
fmm5049 Abstract: FMM5049VT mmic case styles 28492 Text: FMM5049VT Power Amplifier MMIC FEATURES • • • • High Output Power: Pout = 41.0dBm Typ. High Linear Gain: GL = 33.0dB (Typ.) Broad Band: 1.8 to 2.3GHz Hermetically Sealed Package DESCRIPTION The FMM5049VT is a high-gain, wide band, three-stage MMIC	Original	PDF	FMM5049VT FMM5049VT FCSI0901M200 fmm5049 mmic case styles 28492
FLM5972-4F Abstract: 1213 4f Text: FLM5972-4F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 36.5dBm Typ. High Gain: G1dB = 9.5dB (Typ.) High PAE: ηadd = 36% (Typ.) Low IM3 = -45dBc@Po = 25.5dBm Broad Band: 5.9 ~ 7.2GHz Impedance Matched Zin/Zout = 50Ω	Original	PDF	FLM5972-4F -45dBc FLM5972-4F FCSI0901M200 1213 4f