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    onsemi FDA50N50

    MOSFET N-CH 500V 48A TO3PN
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    DigiKey FDA50N50 Tube
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    Rochester Electronics FDA50N50 30 1
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    Fairchild Semiconductor Corporation FDA50N50

    Trans MOSFET N-CH 500V 48A 3-Pin(3+Tab) TO-3P Tube / MOSFET N-CH 500V 48A TO-3P
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    Win Source Electronics FDA50N50 420
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    Fairchild Semiconductor Corporation FDA50N50S

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    Win Source Electronics FDA50N50S 12
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    FDA50N50 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FDA50N50 Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 48A TO-3P Original PDF
    FDA50N50 Fairchild Semiconductor 500V N-Channel MOSFET Original PDF
    FDA50N50 Fairchild Semiconductor 500V N-Channel MOSFET Original PDF

    FDA50N50 Datasheets Context Search

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    fdh50n

    Abstract: No abstract text available
    Text: FDH50N50_F133 / FDA50N50 N-Channel UniFETTM MOSFET 500 V, 50 A, 105 m Features Description • RDS on = 105 m (Max.) @ VGS = 10 V, ID = 24 A UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology.


    Original     		PDF FDH50N50 FDA50N50 FDA50N50 fdh50n

    Untitled

    Abstract: No abstract text available
    Text: TM UniFET FDH50N50_F133 / FDA50N50 500V N-Channel MOSFET Features Description • 48A, 500V, RDS on = 0.105Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FDH50N50 FDA50N50

    TO-3PN

    Abstract: No abstract text available
    Text: UniFET FDH50N50_F133 / FDA50N50 TM 500V N-Channel MOSFET Features Description • 48A, 500V, RDS on = 0.105Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FDH50N50 FDA50N50 FDA50N50 TO-3PN

    Untitled

    Abstract: No abstract text available
    Text: FDH50N50 / FDA50N50 N-Channel UniFETTM MOSFET 500 V, 48 A, 105 mΩ Features Description • RDS on = 89 mΩ (Typ.) @ VGS = 10 V, ID = 24 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology.


    Original     		PDF FDH50N50 FDA50N50

    F133

    Abstract: FDA50N50 FDH50N50 48A110
    Text: UniFET FDH50N50_F133 / FDA50N50 TM 500V N-Channel MOSFET Features Description • 48A, 500V, RDS on = 0.105Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FDH50N50 FDA50N50 FDA50N50 F133 48A110

    F133

    Abstract: FDA50N50 FDH50N50
    Text: UniFET FDH50N50_F133 / FDA50N50 TM 500V N-Channel MOSFET Features Description • 48A, 500V, RDS on = 0.105Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FDH50N50 FDA50N50 FDA50N50 F133

    Untitled

    Abstract: No abstract text available
    Text: FDH50N50_F133 / FDA50N50 N-Channel UniFETTM MOSFET 500 V, 50 A, 105 m Features Description • RDS on = 105 m (Max.) @ VGS = 10 V, ID = 24 A UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology.


    Original     		PDF FDH50N50 FDA50N50

    FDA50N50

    Abstract: FDH50N50
    Text: TM FDH50N50 / FDA50N50 500V N-Channel MOSFET Features Description • 48A, 500V, RDS on = 0.105Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 105 nC)


    Original     		PDF FDH50N50 FDA50N50 FDA50N50

    FQPF8N60C equivalent

    Abstract: FQPF9N50C equivalent LCD inverter circuit FAN7530 equivalent FAN7601 200w dc to ac inverter Circuit diagram FAN7529 equivalent FAN7601 equivalent FDD6685 equivalent FQPF10N60C equivalent
    Text: Introduction Fairchild offers a wide range of digital display solutions that increase power efficiency and decrease standby power— helping to meet the ever-increasing worldwide demand for energy conservation. Our products can help you meet the most stringent energy regulations including EnergyStar, 80 Plus and other standards specified by organizations such as


    Original     		PDF

    interleaved Boost PFC

    Abstract: RG44 FDA18N50 FDPF5N50FT FDPF12N50FT fdpf16n50t FDA16N50 FDB12N50 FQA16N50 FDD6N50
    Text: www.fairchildsemi.com AN-9066 UniFET — Optimized Switch for Discontinuous Current Mode Power Factor Correction Abstract This application note discusses merits of planar technology power MOSFET in discontinuous current mode power factor correction application. In most test conditions it is


    Original     		PDF AN-9066 interleaved Boost PFC RG44 FDA18N50 FDPF5N50FT FDPF12N50FT fdpf16n50t FDA16N50 FDB12N50 FQA16N50 FDD6N50