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    FDB06AN08A1 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FDB06AN08A1 Fairchild Semiconductor 75V, 0.0063 Ohm, N-Channel, UltraFET Trench Power MOSFET Original PDF

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    Abstract: FDB06AN08A1 FDI06AN08A1 FDP06AN08A1 TB334 013D3
    Text: FDB06AN08A1, FDI06AN08A1, FDP06AN08A1 Data Sheet P rel imin ary In for mat ion [ /Title HUF7 6013P 3, HUF76 013D3 S /Subject (20A, 20V, 0.022 Ohm, NChannel, Logic Level Power MOSFETs) /Autho r () /Keywords (Intersil, Semiconductor, NChannel, Logic Level


    Original     		FDB06AN08A1, FDI06AN08A1, FDP06AN08A1 6013P HUF76 013D3 FDI06AN8A1, fdb fairchild FDB06AN08A1 FDI06AN08A1 FDP06AN08A1 TB334 013D3 PDF

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    Abstract: No abstract text available
    Text: FDB06AN08A1, FDI06AN08A1, FDP06AN08A1 Data Sheet Preliminary Information itle UF7 3P F76 D3 April 2001 75V, 0.0063 Ohm, N-Channel, Logic Level UltraFET Trench Power MOSFET The FDB06AN08A1, FDI06AN8A1, and FDP06AN08A1 devices are manufactured using Fairchild Semiconductor’s


    Original     		FDB06AN08A1, FDI06AN08A1, FDP06AN08A1 FDI06AN8A1, FDB06AN08A1 O-263 FDI06AN08A1 O-262 PDF