638Z
Abstract: FDC638APZ MOSFET 20V 45A
Text: FDC638APZ P-Channel 2.5V PowerTrench Specified MOSFET –20V, –4.5A, 43mΩ Features General Description Max rDS on = 43mΩ at VGS = –4.5V, ID = –4.5A This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process
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FDC638APZ
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FDC638APZ
FDC638ASPZ
638Z
MOSFET 20V 45A
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Untitled
Abstract: No abstract text available
Text: FDC638APZ P-Channel 2.5V PowerTrench Specified MOSFET –20V, –4.5A, 43mΩ Features General Description ̈ Max rDS on = 43mΩ at VGS = –4.5V, ID = –4.5A This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process
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FDC638APZ
FDC638APZ
FDC638ASPZ
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