FDI150N10 Search Results

FDI150N10 Price and Stock

Filter by Manufacturer


onsemi FDI150N10 MOSFET N-CH 100V 57A I2PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	FDI150N10	Tube	3,034		1	1 $3.53 10 $3.53 100 $3.53 1000 $1.22188 10000 $1.19213	Buy Now
Avnet Americas	FDI150N10	Tube		17 Weeks	800	1 - 10 - 100 - 1000 $1.2642 10000 $1.122	Buy Now
Mouser Electronics	FDI150N10		776			1 $2.93 10 $1.6 100 $1.46 1000 $1.19 10000 $1.19	Buy Now
Newark	FDI150N10	Bulk			800	1 - 10 - 100 - 1000 $1.59 10000 $1.24	Buy Now
Future Electronics	FDI150N10	Tube		6 Weeks	800	1 - 10 - 100 $1.28 1000 $1.21 10000 $1.16	Buy Now
	FDI150N10	Tube		17 Weeks	800	1 - 10 - 100 $1.28 1000 $1.21 10000 $1.16	Buy Now

Onlinecomponents.com	FDI150N10					1 - 10 - 100 - 1000 $1.31 10000 $1.31	Buy Now
Richardson RFPD	FDI150N10				800	1 - 10 - 100 - 1000 $1.19 10000 $1.19	Buy Now
Avnet Silica	FDI150N10			18 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	FDI150N10			19 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Buy Now

FDI150N10 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
FDI150N10		Fairchild Semiconductor	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 57A I2PAK		Original	PDF

FDI150N10 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: FDI150N10 N-Channel PowerTrench MOSFET 100 V, 57 A, 16 mΩ Features General Description • RDS on = 12 mΩ ( Typ.) @ VGS = 10 V, ID = 49 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.	Original	PDF	FDI150N10 FDI150N10
FDI150N10 Abstract: No abstract text available Text: FDI150N10 tm N-Channel PowerTrench MOSFET 100V, 57A, 16m Features General Description • RDS on = 12m ( Typ.) @ VGS = 10V, ID = 49A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet	Original	PDF	FDI150N10 O-262 FDI150N10
Untitled Abstract: No abstract text available Text: FDI150N10 N-Channel PowerTrench MOSFET 100 V, 57 A, 16 mΩ Features Description • RDS on = 12 mΩ (Typ.) @ VGS = 10 V, ID = 49 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining	Original	PDF	FDI150N10
Untitled Abstract: No abstract text available Text: FDI150N10 N-Channel PowerTrench MOSFET tm 100V, 57A, 16m Features General Description • RDS on = 12m ( Typ.) @ VGS = 10V, ID = 49A • Fast switching speed • Low gate charge This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been	Original	PDF	FDI150N10 O-262