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    FDMA1430JP Price and Stock

    onsemi FDMA1430JP

    FET/BJT NPN/P CH 30V 2.9A MICROF
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    FDMA1430JP Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FDMA1430JP Fairchild Semiconductor Transistors - Special Purpose, Discrete Semiconductor Products, FET/BJT NPN/P CH 30V 2.9A MICROF Original PDF

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    Catalog Datasheet MFG & Type Document Tags PDF

    fairchild power bjt

    Abstract: bjt specifications
    Text: FDMA1430JP Integrated P-Channel PowerTrench MOSFET and BJT -30 V, -2.9 A, 90 mΩ Features General Description „ Max rDS on = 90 mΩ at VGS = -4.5 V, ID = -2.9 A This device is designed specifically as a single package solution for loadswitching in cellular handset and other ultra-portable


    Original     		FDMA1430JP FDMA1430JP fairchild power bjt bjt specifications PDF

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    Abstract: No abstract text available
    Text: Integrated P-Channel PowerTrench MOSFET and BJT -30 V, -2.9 A, 90 mΩ Features General Description „ Max rDS on = 90 mΩ at VGS = -4.5 V, ID = -2.9 A This device is designed specifically as a single package solution for loadswitching in cellular handset and other ultra-portable


    Original     		PDF

    BJT with V-I characteristics

    Abstract: fairchild power bjt FDMA1430JP BJT characteristics bjt specifications
    Text: Integrated P-Channel PowerTrench MOSFET and BJT -30 V, -2.9 A, 90 mΩ Features General Description „ Max rDS on = 90 mΩ at VGS = -4.5 V, ID = -2.9 A This device is designed specifically as a single package solution for loadswitching in cellular handset and other ultra-portable


    Original     		FDMA1430JP FDMA1430JP BJT with V-I characteristics fairchild power bjt BJT characteristics bjt specifications PDF