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Catalog Datasheet	MFG & Type	PDF	Document Tags
FDMC86102Z Abstract: FDMC86102LZ Text: FDMC86102LZ N-Channel Power Trench MOSFET 100 V, 22 A, 24 mΩ Features General Description Max rDS on = 24 mΩ at VGS = 10 V, ID = 6.5 A This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process	Original	PDF	FDMC86102LZ FDMC86102LZ FDMC86102Z
Untitled Abstract: No abstract text available Text: FDMC86102LZ N-Channel Shielded Gate PowerTrench MOSFET 100 V, 22 A, 24 mΩ Features General Description Shielded Gate MOSFET Technology This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has	Original	PDF	FDMC86102LZ
Untitled Abstract: No abstract text available Text: FDMC86102LZ N-Channel Power Trench MOSFET 100 V, 22 A, 24 mΩ Features General Description ̈ Max rDS on = 24 mΩ at VGS = 10 V, ID = 6.5 A This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process	Original	PDF	FDMC86102LZ
FDMC86102L Abstract: No abstract text available Text: FDMC86102LZ N-Channel Shielded Gate PowerTrench MOSFET 100 V, 22 A, 24 mΩ Features General Description Shielded Gate MOSFET Technology This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has	Original	PDF	FDMC86102LZ FDMC86102L
FDMC86102L Abstract: No abstract text available Text: FDMC86102LZ N-Channel Shielded Gate PowerTrench MOSFET 100 V, 22 A, 24 mΩ Features General Description Shielded Gate MOSFET Technology This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has	Original	PDF	FDMC86102LZ FDMC86102L