Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    FDMS3600S Search Results

    SF Impression Pixel

    FDMS3600S Price and Stock

    onsemi FDMS3600S

    MOSFET 2N-CH 25V 15A/30A 8PQFN
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey FDMS3600S Cut Tape 13,185 1
    • 1 $2.59
    • 10 $1.772
    • 100 $2.59
    • 1000 $0.98375
    • 10000 $0.98375
    Buy Now
    FDMS3600S Digi-Reel 13,185 1
    • 1 $2.59
    • 10 $1.772
    • 100 $2.59
    • 1000 $0.98375
    • 10000 $0.98375
    Buy Now
    FDMS3600S Reel 9,000 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.975
    Buy Now
    FDMS3600S Reel
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Buy Now
    Avnet Americas FDMS3600S Reel 0 Weeks, 2 Days 705
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.85542
    • 10000 $0.83529
    Buy Now
    FDMS3600S Reel 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Get Quote
    Flip Electronics FDMS3600S 12,885
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Get Quote

    Fairchild Semiconductor Corporation FDMS3600S

    Small Signal Field-Effect Transistor, 15A, 25V, 2-Element, N-Channel, MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics FDMS3600S 51,778 1
    • 1 $1.14
    • 10 $1.14
    • 100 $1.07
    • 1000 $0.969
    • 10000 $0.969
    Buy Now

    FDMS3600S Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FDMS3600S Fairchild Semiconductor FETs - Arrays, Discrete Semiconductor Products, MOSFET N-CH 25V 15A 8-PQFN Original PDF

    FDMS3600S Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    fdms3600

    Abstract: FDMS3600S N9OC
    Text: PowerTrench Power Stage 25 V Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a „ Max rDS on = 5.6 mΩ at VGS = 10 V, ID = 15 A dual PQFN package. The switch node has been internally


    Original
    PDF FDMS3600S FDMS3600S fdms3600 N9OC

    TG11

    Abstract: TG-11
    Text: 5 4 3 VDD33-1 VDD25-1 GND 2 1 REVISION HISTORY INT/EXTVCC-1 ECO R1 2 C2 0.22uF C5 10uF L1 R4 40 C25 10nF Q8 15 RUN1 14 RUN0 23 SC R22 R28 OPT 24 17 R29 10K 18 19 20 VDD33-1 21 VDD33 RUN0 TG1 ASEL BOOST1 WP SW1 SC BG1 ISNS1+ FREQ_CFG ISNS1- VOUT0_CFG VSENSE1


    Original
    PDF VDD33-1 VDD25-1 VDD33 330uF 100nF LTC3880EUJ TG11 TG-11

    fdms3600

    Abstract: No abstract text available
    Text: Dual N-Channel PowerTrench MOSFET N-Channel: 25 V, 30 A, 5.6 mΩ N-Channel: 25 V, 40 A, 1.6 mΩ Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a „ Max rDS on = 5.6 mΩ at VGS = 10 V, ID = 15 A dual PQFN package. The switch node has been internally


    Original
    PDF FDMS3600S FDMS3600S fdms3600

    Untitled

    Abstract: No abstract text available
    Text: PowerTrench Power Stage 25 V Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a ̈ Max rDS on = 5.6 mΩ at VGS = 10 V, ID = 15 A dual PQFN package. The switch node has been internally


    Original
    PDF