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Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: UniFETTM FDD5N53/FDU5N53 tm N-Channel MOSFET 530V, 4A, 1.5Ω Features Description • RDS on = 1.25Ω ( Typ.)@ VGS = 10V, ID = 2A • Low gate charge ( Typ. 11nC) These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar	Original	FDD5N53/FDU5N53 FDD5N53/FDU5N53 FDD5N53 FDU5N53	PDF
fdu5n53 Abstract: No abstract text available Text: UniFETTM FDD5N53/FDU5N53 tm N-Channel MOSFET 530V, 4A, 1.5Ω Features Description • RDS on = 1.25Ω ( Typ.)@ VGS = 10V, ID = 2A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.	Original	FDD5N53/FDU5N53 FDD5N53/FDU5N53 FDD5N53 FDU5N53	PDF

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Untitled

Abstract: No abstract text available
Text: UniFETTM FDD5N53/FDU5N53 tm N-Channel MOSFET 530V, 4A, 1.5Ω Features Description • RDS on = 1.25Ω ( Typ.)@ VGS = 10V, ID = 2A • Low gate charge ( Typ. 11nC) These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar

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FDD5N53/FDU5N53 FDD5N53/FDU5N53 FDD5N53 FDU5N53

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fdu5n53

Abstract: No abstract text available
Text: UniFETTM FDD5N53/FDU5N53 tm N-Channel MOSFET 530V, 4A, 1.5Ω Features Description • RDS on = 1.25Ω ( Typ.)@ VGS = 10V, ID = 2A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.