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    BPW34S

    Abstract: E9087 GEO06643 GEO06863 GEO06916 Q62702-P1602 Q62702-P1790 Q62702-P73 S8050
    Text: feo06643 Chip position 0.6 0.4 2.2 1.9 5.4 4.9 4.5 4.3 BPW 34 BPW 34 S BPW 34 S E9087 3.5 3.0 1.2 0.7 0.6 0.4 Cathode marking 4.0 3.7 0.8 0.6 Silizium-PIN-Fotodiode NEU: in SMT und als Reverse Gullwing Silicon PIN Photodiode NEW: in SMT and as Reverse Gullwing


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    PDF feo06643 E9087) GEO06643 OHF00080 OHF00081 OHF00082 OHF01402 BPW34S E9087 GEO06643 GEO06863 GEO06916 Q62702-P1602 Q62702-P1790 Q62702-P73 S8050

    feo06643

    Abstract: GEO06643 GEO06863 Q62702-P1602 Q62702-P73 S8050
    Text: 5.4 4.9 4.5 4.3 0.8 0.6 0.6 0.4 2.2 1.9 Chip position 3.5 3.0 1.2 0.7 0.6 0.4 Cathode marking 4.0 3.7 BPW 34 BPW 34 S feo06643 Silizium-PIN-Fotodiode NEU: in SMT Silicon PIN Photodiode NEW: in SMT 0.6 0.4 0.8 0.6 0.6 0.4 0.35 0.2 0.5 0.3 0 . 5˚ 5.08 mm


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    PDF feo06643 feo06862 GEO06643 GEO06863 OHF00080 OHF00081 OHF00082 OHF01402 feo06643 GEO06643 GEO06863 Q62702-P1602 Q62702-P73 S8050

    bpw 32

    Abstract: foto transistor bpw 32 datasheet BPW 14 A BPW 14 C bpw 50 BPW-34 F 365 R Q62702-P1602 Q62702-P73
    Text: BPW 34 BPW 34 S BPW 34 BPW 34 S feo06862 feo06643 Silizium-PIN-Fotodiode NEU: in SMT Silicon PIN Photodiode NEW: in SMT Maβe in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale Features ● Speziell geeignet für Anwendungen im


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    PDF feo06862 feo06643 bpw 32 foto transistor bpw 32 datasheet BPW 14 A BPW 14 C bpw 50 BPW-34 F 365 R Q62702-P1602 Q62702-P73

    GEO06643

    Abstract: Q62702-P76
    Text: Chip position 0.6 0.4 2.2 1.9 5.4 4.9 4.5 4.3 3.5 3.0 1.2 0.7 0.6 0.4 Cathode marking 4.0 3.7 BPW 33 0.8 0.6 Silizium-Fotodiode Silicon Photodiode 0.6 0.4 0.8 0.6 0.35 0.2 0.5 0.3 0.6 0.4 0 . 5˚ Photosensitive area 2.65 mm x 2.65 mm Approx. weight 0.1 g


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    PDF feo06643 GEO06643 OHF00073 OHF01065 OHF00075 OHF01402 GEO06643 Q62702-P76

    p945

    Abstract: transistor p945 ir p945 p945 transistor GEO06643 Q62702-P945
    Text: Chip position 0.6 0.4 2.2 1.9 5.4 4.9 4.5 4.3 BPW 34 B 3.5 3.0 1.2 0.7 0.6 0.4 Cathode marking 4.0 3.7 0.8 0.6 Silizium-PIN-Fotodiode mit erhöhter Blauempfindlichkeit Silicon PIN Photodiode with Enhanced Blue Sensitivity 0.6 0.4 0.8 0.6 0.35 0.2 0.5 0.3 0.6


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    PDF feo06643 GEO06643 OHF00080 OHF00081 OHF00082 OHF01402 p945 transistor p945 ir p945 p945 transistor GEO06643 Q62702-P945

    isl 6251 schematic

    Abstract: smd transistor A4S Siemens OFW 361 smd marking b4h 6Bs smd transistor NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG Transistors Diodes smd A7H a4s smd transistor npn transistor ss100 smd transistor 6Bs
    Text: SIEMENS Halbleiter-Datenblätter Im Produktbereich „Halbleiter“ konnten uns leider von SIEMENS nicht alle Daten rechtzeitig zur Verfügung gestellt werden. Wir werden uns bemühen, die Auswahl an Datenblättern dieses Bereichs für die nächste Ausgabe dieser CD zu vervollständigen.


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    PDF Q62702-A772 Q62702-A731 Q62702-A773 OT-23 isl 6251 schematic smd transistor A4S Siemens OFW 361 smd marking b4h 6Bs smd transistor NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG Transistors Diodes smd A7H a4s smd transistor npn transistor ss100 smd transistor 6Bs

    SPAD

    Abstract: No abstract text available
    Text: SIEMENS Silizium-Fotodiode Silicon Photodiode oo io Î -J 0 .3 5 °-2 0 I Fla sh c re a i BPW 33 L 0 .5 5 .0 8 m m Spad" 9 - R a d ia n t se n sitive a re a A p p ro x . w e ig h t 0.1 feo06643 C a tho de g Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.


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